K6R1016C1D-TC10中文资料应用文章市场行情现货热卖使用介绍-中国IC网-芯三七

当前位置：IC37首页_>K字母起始型号索引_>K字母起始型号索引第141页更新时间：2024-12-03 15:10:11

产品型号K6R1016C1D-TC10的概述

K6R1016C1D-TC10概述 K6R1016C1D-TC10 是一款由韩国三星电子公司（Samsung Electronics）生产的高性能动态随机存取存储器（DRAM），具体为 SDRAM（同步动态随机存取存储器）类型。这款芯片在存储器市场上占据了一定的份额，因其优秀的性能与相对较低的功耗，被广泛应用于各类电子设备，包括计算机、移动设备及其他需要大容量存储的工业设备。 K6R1016C1D-TC10 具有多种规格，主要包括其存储容量、时钟频率、操作电压等。该芯片在设计上追求的是提高存取数据的速度，同时保证低功耗，以契合现代电子产品对性能与能效的双重需求。 K6R1016C1D-TC10详细参数 K6R1016C1D-TC10 的一些详细参数包括： - 存储容量：1 Mbit（1024 Kbit） - 配置：组织方式为 1M x 16 - 数据传输速率：最高可达到 66 MHz ...

产品型号K6R1016C1D-TC10的Datasheet PDF文件预览

PRELIMINARY

K6R1004C1D

CMOS SRAM

Document Title

256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).

Revision History

Rev.No.

History

Draft Data

Remark

Rev. 0.0

Rev. 0.1

Rev. 0.2

Initial release with Preliminary.

Current modify

June. 8. 2001

September. 9. 2001

December. 18. 2001

Preliminary

1. Delete 15ns speed bin.

2. Change Icc for Industrial mode.

Item

85mA

75mA

Current

75mA

65mA

10ns

ICC(Industrial)

12ns

Rev. 1.0

1. Final datasheet release.

2. Delete UB,LB releated AC characteristics and timing diagram.

June. 19. 2002

Final

Rev. 2.0

Rev. 3.0

1. Delete 12ns speed bin.

July. 8. 2002

July. 26, 2004

Final

1. Add the Lead Free Package type.

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

Rev. 3.0

July 2004

- 1 -

PRELIMINARY

K6R1004C1D

CMOS SRAM

1Mb Async. Fast SRAM Ordering Information

Org.

Part Number

VDD(V)

Speed ( ns )

PKG

Temp. & Power

K6R1004C1D-J(K)C(I) 10

K6R1004V1D-J(K)C(I) 08/10

K6R1008C1D-J(K,T,U)C(I) 10

3.3

8/10

J : 32-SOJ

256K x4

K: 32-SOJ(LF)

J : 32-SOJ

C : Commercial Temperature

,Normal Power Range

I : Industrial Temperature

,Normal Power Range

K : 32-SOJ(LF)

T : 32-TSOP2

U : 32-TSOP2(LF)

128K x8

64K x16

K6R1008V1D-J(K,T,U)C(I) 08/10

K6R1016C1D-J(K,T,U,E)C(I) 10

K6R1016V1D-J(K,T,U,E)C(I) 08/10

3.3

8/10

J : 44-SOJ

K : 44-SOJ(LF)

T : 44-TSOP2

U : 44-TSOP2(LF)

E : 48-TBGA

3.3

8/10

Rev. 3.0

July 2004

- 2 -

PRELIMINARY

CMOS SRAM

K6R1004C1D

256K x 4 Bit (with OE) High-Speed CMOS Static RAM

FEATURES

GENERAL DESCRIPTION

• Fast Access Time 10ns(Max.)

• Power Dissipation

The K6R1004C1D is a 1,048,576-bit high-speed Static Random

Access Memory organized as 262,144 words by 4 bits. The

K6R1004C1D uses 4 common input and output lines and has

an output enable pin which operates faster than address

access time at read cycle. The device is fabricated using SAM-

SUNG′s advanced CMOS process and designed for high-

speed circuit technology. It is particularly well suited for use in

Standby (TTL)

: 20mA(Max.)

(CMOS) : 5mA(Max.)

Operating K6R1004C1D-10: 65mA(Max.)

Single 5.0V 10% Power Supply

TTL Compatible Inputs and Outputs

I/O Compatible with 3.3V Device

Fully Static Operation

•

high-density

high-speed

system

applications.

The

K6R1004C1D is packaged in a 400 mil 32-pin plastic SOJ.

- No Clock or Refresh required

Three State Outputs

•

Center Power/Ground Pin Configuration

• Standard Pin Configuration :

K6R1004C1C-J : 32-SOJ-400

K6R1004C1C-K : 32-SOJ-400(Lead-Free)

• Operating in Commercial and Industrial Temperature

range.

PIN CONFIGURATION(Top View)

A17

A16

A15

A14

A13

N.C

FUNCTIONAL BLOCK DIAGRAM

Clk Gen.

Pre-Charge Circuit

I/O1

Vcc

Vss

I/O4

Vss

Vcc

I/O3

A12

A11

A10

SOJ

I/O2 10

WE 11

A4 12

A5 13

A6 14

A7 15

N.C 16

Memory Array

512 Rows

512x4 Columns

Data

I/O Circuit &

I/O1 ~ I/O4

N.C

Cont.

Column Select

CLK

Gen.

PIN FUNCTION

A9 A10 A11 A12 A13 A14 A15 A16 A17

Pin Name

A0 - A17

Pin Function

Address Inputs

Write Enable

Chip Select

Output Enable

Data Inputs/Outputs

Power(+5.0V)

Ground

I/O1 ~ I/O4

VCC

VSS

N.C

No Connection

Rev. 3.0

July 2004

- 3 -

PRELIMINARY

K6R1004C1D

CMOS SRAM

ABSOLUTE MAXIMUM RATINGS*

Parameter

Voltage on Any Pin Relative to VSS

Voltage on VCC Supply Relative to VSS

Power Dissipation

Symbol

VIN, VOUT

VCC

Rating

-0.5 to Vcc+0.5V

-0.5 to 7.0

Unit

Storage Temperature

TSTG

-65 to 150

0 to 70

°C

Operating Temperature

Commercial

Industrial

-40 to 85

* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and

functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.

Exposure to absolute maximum rating conditions for extended periods may affect reliability.

RECOMMENDED DC OPERATING CONDITIONS(TA=0 to 70°C)

Parameter

Supply Voltage

Symbol

VCC

Min

4.5

Typ

Max

Unit

5.0

5.5

Ground

VSS

Input High Voltage

Input Low Voltage

VIH

2.2

-0.5*

VCC+0.5**

0.8

VIL

* VIL(Min) = -2.0V a.c (Pulse Width ≤ 8ns) for I ≤ 20mA.

** V^IH(Max) = VCC + 2.0V a.c (Pulse Width ≤ 8ns) for I ≤ 20mA.

DC AND OPERATING CHARACTERISTICS*(TA=0 to 70°C, Vcc=5.0V 10%, unless otherwise specified)

Parameter

Symbol

ILI

Test Conditions

Min

-2

Max

Unit

µA

Input Leakage Current

Output Leakage Current

VIN=VSS to VCC

ILO

CS=VIH or OE=VIH or WE=VIL

VOUT=VSS to VCC

-2

µA

Operating Current

Standby Current

ICC

Min. Cycle, 100% Duty

Com.

Ind.

10ns

ISB

Min. Cycle, CS=VIH

ISB1

f=0MHz, CS≥VCC-0.2V,

VIN≥VCC-0.2V or VIN≤0.2V

Output Low Voltage Level

Output High Voltage Level

VOL

VOH

IOL=8mA

0.4

IOH=-4mA

2.4

* The above parameters are also guaranteed at industrial temperature range.

CAPACITANCE*(TA=25°C, f=1.0MHz)

Item

Symbol

CI/O

Test Conditions

VI/O=0V

TYP

Max

Unit

Input/Output Capacitance

Input Capacitance

CIN

VIN=0V

* Capacitance is sampled and not 100% tested.

Rev. 3.0

July 2004

- 4 -

PRELIMINARY

CMOS SRAM

K6R1004C1D

AC CHARACTERISTICS(TA=0 to 70°C, VCC=5.0V 10%, unless otherwise noted.)

TEST CONDITIONS

Parameter

Value

Input Pulse Levels

0V to 3V

3ns

Input Rise and Fall Times

Input and Output timing Reference Levels

Output Loads

1.5V

See below

Output Loads(B)

for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ

Output Loads(A)

DOUT

+5.0V

RL = 50Ω

480Ω

VL = 1.5V

30pF*

DOUT

ZO = 50Ω

255Ω

5pF*

* Capacitive Load consists of all components of the

test environment.

* Including Scope and Jig Capacitance

READ CYCLE*

K6R1004C1D-10

Parameter

Symbol

Unit

Min

Max

Read Cycle Time

tRC

tAA

Address Access Time

Chip Select to Output

tCO

tOE

tLZ

Output Enable to Valid Output

Chip Enable to Low-Z Output

Output Enable to Low-Z Output

Chip Disable to High-Z Output

Output Disable to High-Z Output

Output Hold from Address Change

Chip Selection to Power Up Time

Chip Selection to Power DownTime

tOLZ

tHZ

tOHZ

tOH

tPU

tPD

* The above parameters are also guaranteed at industrial temperature range.

Rev. 3.0

July 2004

- 5 -

PRELIMINARY

K6R1004C1D

CMOS SRAM

WRITE CYCLE*

K6R1004C1D-10

Parameter

Symbol

Unit

Min

Max

Write Cycle Time

tWC

tCW

tAS

Chip Select to End of Write

Address Set-up Time

Address Valid to End of Write

Write Pulse Width(OE High)

Write Pulse Width(OE Low)

Write Recovery Time

tAW

tWP

tWP1

tWR

tWHZ

tDW

tDH

Write to Output High-Z

Data to Write Time Overlap

Data Hold from Write Time

End of Write to Output Low-Z

tOW

* The above parameters are also guaranteed at industrial temperature range.

TIMING DIAGRAMS

TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH)

tRC

Address

tAA

tOH

Data Out

Valid Data

Previous Valid Data

TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)

tRC

Address

tAA

tCO

tHZ(3,4,5)

tOHZ

tDH

tOE

tOLZ

tLZ(4,5)

Data out

High-Z

Valid Data

tPU

tPD

ICC

ISB

VCC

Current

50%

Rev. 3.0

July 2004

- 6 -

PRELIMINARY

CMOS SRAM

K6R1004C1D

NOTES(READ CYCLE)

1. WE is high for read cycle.

2. All read cycle timing is referenced from the last valid address to the first transition address.

3. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit condition and are not referenced to VOH or

VOL levels.

4. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to

device.

5. Transition is measured 200mV from steady state voltage with Load(B). This parameter is sampled and not 100% tested.

6. Device is continuously selected with CS=VIL.

7. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle.

TIMING WAVEFORM OF WRITE CYCLE(1) (OE= Clock)

tWC

Address

tWR(5)

tAW

tCW(3)

tWP(2)

tAS(4)

tDW

tDH

High-Z

Data in

Data out

Valid Data

tOHZ(6)

High-Z(8)

TIMING WAVEFORM OF WRITE CYCLE(2) (OE=Low Fixed)

tWC

Address

tWR(5)

tAW

tCW(3)

tAS(4)

tWP1(2)

tDW

tDH

High-Z

Data in

Valid Data

tWHZ(6)

tOW

(10)

(9)

High-Z(8)

Data out

Rev. 3.0

July 2004

- 7 -

PRELIMINARY

CMOS SRAM

K6R1004C1D

TIMING WAVEFORM OF WRITE CYCLE(3) (CS=Controlled)

tWC

Address

tAW

tWR(5)

tCW(3)

tWP(2)

tAS(4)

tDH

tDW

High-Z

Data in

Valid Data

tLZ

tWHZ(6)

High-Z(8)

High-Z

Data out

NOTES(WRITE CYCLE)

1. All write cycle timing is referenced from the last valid address to the first transition address.

2. A write occurs during the overlap of a low CS and WE. A write begins at the latest transition CS going low and WE going low ;

A write ends at the earliest transition CS going high or WE going high. tWP is measured from the beginning of write to the end of

write.

3. t^CWis measured from the later of CS going low to end of write.

4. t^ASis measured from the address valid to the beginning of write.

5. t^WRis measured from the end of write to the address change. tWR applied in case a write ends as CS or WE going high.

6. If OE, CS and WE are in the Read Mode during this period, the I/O pins are in the output low-Z state. Inputs of opposite phase

of the output must not be applied because bus contention can occur.

7. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle.

8. If CS goes low simultaneously with WE going or after WE going low, the outputs remain high impedance state.

9. Dout is the read data of the new address.

10.When CS is low : I/O pins are in the output state. The input signals in the opposite phase leading to the output should not be

applied.

FUNCTIONAL DESCRIPTION

Mode

Not Select

Output Disable

Read

I/O Pin

High-Z

DOUT

Supply Current

ISB, ISB1

ICC

Write

DIN

ICC

* X means Don′t Care.

Rev. 3.0

July 2004

- 8 -

PRELIMINARY

K6R1004C1D

CMOS SRAM

Units:millimeters/Inches

PACKAGE DIMENSIONS

32-SOJ-400

#32

#17

9.40 0.25

11.18 0.12

0.440 0.005

0.370 0.010

+0.10

0.20

-0.05

0.008 ^+0.004

#16

-0.002

0.69

MIN

21.36

0.841

MAX

0.027

20.95 0.12

0.825 0.005

1.30

(

)

0.051

0.10

3.76

MAX

1.30

0.004

0.148

0.051

+0.10

-0.05

+0.10

0.71

0.43

0.017

-0.05

1.27

0.95

(

)

0.028 ^+0.004

+0.004

0.050

0.0375

-0.002

Rev. 3.0

July 2004

- 9 -

K6R1016C1D-TC10相关文章

配单直通车

柒号芯城电子商务（深圳）有限公司服务专线: 18922803401 在线联系:

QQ：2881677436 复制

QQ：2881620402 复制

深圳市芯福林电子有限公司服务专线: 13418564337 在线联系:

QQ：2881495808 复制

QQ：308365177 复制

首天国际（深圳）科技有限公司服务专线: 0755-82807802/82807803 在线联系:

QQ：528164397 复制

QQ：1318502189 复制

深圳市中利达电子科技有限公司服务专线: 0755-13686833545 在线联系:

QQ：1902134819 复制

QQ：2881689472 复制

北京元坤伟业科技有限公司服务专线: 010-62104931621064316210489162104791 在线联系:

QQ：857273081 复制

QQ：1594462451 复制

K6R1016C1D-TC10产品参数

型号:	K6R1016C1D-TC10
是否Rohs认证：	不符合
生命周期：	Obsolete
IHS 制造商：	SAMSUNG SEMICONDUCTOR INC
零件包装代码：	TSOP2
包装说明：	TSOP2, TSOP44,.46,32
针数：	44
Reach Compliance Code：	unknown
ECCN代码：	3A991.B.2.B
HTS代码：	8542.32.00.41
风险等级：	5.89
Is Samacsys：	N
最长访问时间：	10 ns
I/O 类型：	COMMON
JESD-30 代码：	R-PDSO-G44
JESD-609代码：	e0
长度：	18.41 mm
内存密度：	1048576 bit
内存集成电路类型：	STANDARD SRAM
内存宽度：	16
功能数量：	1
端子数量：	44
字数：	65536 words
字数代码：	64000
工作模式：	ASYNCHRONOUS
最高工作温度：	70 °C
最低工作温度：
组织：	64KX16
输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY
封装代码：	TSOP2
封装等效代码：	TSOP44,.46,32
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, THIN PROFILE
并行/串行：	PARALLEL
电源：	5 V
认证状态：	Not Qualified
座面最大高度：	1.2 mm
最大待机电流：	0.005 A
最小待机电流：	4.5 V
子类别：	SRAMs
最大压摆率：	0.065 mA
最大供电电压 (Vsup)：	5.5 V
最小供电电压 (Vsup)：	4.5 V
标称供电电压 (Vsup)：	5 V
表面贴装：	YES
技术：	CMOS
温度等级：	COMMERCIAL
端子面层：	Tin/Lead (Sn/Pb)
端子形式：	GULL WING
端子节距：	0.8 mm
端子位置：	DUAL
宽度：	10.16 mm
Base Number Matches：	1

电子百科

产品导航

产品型号K6R1016C1D-TC10的概述

产品型号K6R1016C1D-TC10的Datasheet PDF文件预览

K6R1016C1D-TC10相关产品

K6R1016C1D-TC10相关文章

IC37:专业IC行业平台