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产品型号K6T4008V1C-YF70的概述

芯片K6T4008V1C-YF70的概述 K6T4008V1C-YF70是一款由韩国三星电子（Samsung Electronics）公司研发和生产的动态随机存取存储器（DRAM）芯片。这款芯片属于SDRAM（同步动态随机存取存储器）系列，其主要应用于各种电子设备中，特别是在计算机和嵌入式系统中，提供高效的内存解决方案。K6T4008V1C-YF70以其高存储容量和较快的存取速度，广泛用于需要高速数据处理的场景，比如图形处理、游戏应用和服务器等。芯片K6T4008V1C-YF70的详细参数 K6T4008V1C-YF70是一种4M x 8位DRAM存储器，其基本参数如下： - 容量：4Mb（Megabit） - 数据总线宽度：8位 - 工作电压：3.3V - 存储器类型：SDRAM - 数据速率：通常为66MHz至133MHz，可根据系统配置进行调整 - 存取时间：大约在60ns至8...

产品型号K6T4008V1C-YF70的Datasheet PDF文件预览

K6T4008V1C, K6T4008U1C Family

CMOS SRAM

Document Title

512Kx8 bit Low Power and Low Voltage CMOS Static RAM

Revision History

Revision No. History

Draft Data

Remark

0.0

0.1

Initial Draft

January 13, 1998

June 12, 1998

Advance

Revisied

Preliminary

- Speed bin change

KM68U4000C : 85/100ns ® 70/85/100ns

- DC Characteristics change

ICC : 5mA at read/write ® 4mA at read

ICC1 : 3mA ® 4mA

ICC2 : 35mA ® 30mA

ISB : 0.5mA ® 0.3mA

ISB1 : 10mA ® 15mA for commercial parts

- Add 32-TSOP1-0820

0.11

1.0

Errata correct

- 32-TSOP1-0813 products: T ® TG

November 7, 1998

January 15, 1999

Finalize

Final

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.

Revision 1.0

January 1999

K6T4008V1C, K6T4008U1C Family

CMOS SRAM

512K´ 8 bit Low Power and Low Voltage CMOS Static RAM

FEATURES

GENERAL DESCRIPTION

· Process Technology: TFT

The K6T4008V1C and K6T4008U1C families are fabricated by

SAMSUNG¢s advanced CMOS process technology. The fami-

lies support various operating temperature range and have var-

ious package type for user flexibility of system design. The

families also support low data retention voltage for battery

back-up operation with low data retention current.

· Organization: 512K´ 8

· Power Supply Voltage

K6T4008V1C Family: 3.0~3.6V

K6T4008U1C Family: 2.7~3.3V

· Low Data Retention Voltage: 2V(Min)

· Three state output and TTL Compatible

· Package Type: 32-SOP-525, 32-TSOP2-400F/R

32-TSOP1-0820F, 32-TSOP1-0813.4F

PRODUCT FAMILY

Power Dissipation

Product Family

Operating Temperature Vcc Range

Speed

PKG Type

Standby

(ISB1, Max)

Operating

(ICC2, Max)

70¹⁾/85ns

70¹⁾/85/100ns

70¹⁾/85ns

K6T4008V1C-B

K6T4008U1C-B

K6T4008V1C-F

K6T4008U1C-F

3.0~3.6V

32-SOP

Commercial(0~70°C)

15mA

20mA

2.7~3.3V

32-TSOP2-F/R

32-TSOP1-F

32-sTSOP1-F

30mA

3.0~3.6V

Industrial(-40~85°C)

70¹⁾/85/100ns

2.7~3.3V

1. The paramerter is measured with 30pF test load.

PIN DESCRIPTION

FUNCTIONAL BLOCK DIAGRAM

A18

A16

A14

A12

VCC

A15

A17

A13

VCC

A15

A17

A18

A16

A14

A12

Clk gen.

Precharge circuit.

A13 28

32-TSOP2

(Reverse)

32-SOP

32-TSOP2

(Forward)

A11

A11 25

Memory array

1024 rows

512´ 8 columns

Row

select

A10

A12

A14

A16

I/O8

I/O7

I/O6

I/O5

I/O4

I/O8

I/O7

I/O6

I/O5

I/O4

I/O1

I/O2

I/O3

VSS

I/O1

I/O2

I/O3

VSS

A18

I/O1

I/O8

Data

cont

I/O Circuit

A11

A10

Column select

A13

A17

A15

VCC

A18

A16

A14

A12

I/O8

I/O7

I/O6

I/O5

I/O4

VSS

I/O3

I/O2

I/O1

Data

cont

32-TSOP1

32-STSOP1

(Forward)

A2 A3 A8 A9 A10 A11 A13 A15 A17

Control

logic

Name Function

A0~A18 Address Inputs

Vcc

Vss

Power

Write Enable Input

Chip Select Input

Output Enable Input

Ground

I/O1~I/O8 Data Inputs/Outputs

SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.

Revision 1.0

January 1999

K6T4008V1C, K6T4008U1C Family

CMOS SRAM

PRODUCT LIST

Commercial Temp Products(0~70°C)

Industrial Temp Products(-40~85°C)

Part Name

Function

Part Name

Function

K6T4008V1C-GB70

K6T4008V1C-GB85

K6T4008V1C-VB70

K6T4008V1C-VB85

K6T4008V1C-MB70

K6T4008V1C-MB85

K6T4008V1C-TB70

K6T4008V1C-TB85

K6T4008V1C-YB70

K6T4008V1C-YB85

32-SOP, 70ns, 3.3V, LL

K6T4008V1C-GF70

K6T4008V1C-GF85

K6T4008V1C-VF70

K6T4008V1C-VF85

K6T4008V1C-MF70

K6T4008V1C-MF85

K6T4008V1C-TF70

K6T4008V1C-TF85

K6T4008V1C-YF70

K6T4008V1C-YF85

32-SOP, 70ns, 3.3V, LL

32-SOP, 85ns, 3.3V, LL

32-TSOP2-F, 70ns, 3.3V, LL

32-TSOP2-F, 85ns, 3.3V, LL

32-TSOP2-R, 70ns, 3.3V, LL

32-TSOP2-R, 85ns, 3.3V, LL

32-TSOP1-F, 70ns, 3.3V, LL

32-TSOP1-F, 85ns, 3.3V, LL

32-sTSOP1-F, 70ns, 3.3V, LL

32-sTSOP1-F, 85ns, 3.3V, LL

32-TSOP2-F, 70ns, 3.3V, LL

32-TSOP2-F, 85ns, 3.3V, LL

32-TSOP2-R, 70ns, 3.3V, LL

32-TSOP2-R, 85ns, 3.3V, LL

32-TSOP1-F, 70ns, 3.3V, LL

32-TSOP1-F, 85ns, 3.3V, LL

32-sTSOP1-F, 70ns, 3.3V, LL

32-sTSOP1-F, 85ns, 3.3V, LL

K6T4008U1C-GB70

K6T4008U1C-GB85

K6T4008U1C-GB10

K6T4008U1C-VB70

K6T4008U1C-VB85

K6T4008U1C-VB10

K6T4008U1C-MB70

K6T4008U1C-MB85

K6T4008U1C-MB10

K6T4008U1C-TB70

K6T4008U1C-TB85

K6T4008U1C-TB10

K6T4008U1C-YB70

K6T4008U1C-YB85

K6T4008U1C-YB10

32-SOP, 70ns, 3.0V, LL

K6T4008U1C-GF70

K6T4008U1C-GF85

K6T4008U1C-GF10

K6T4008U1C-VF70

K6T4008U1C-VF85

K6T4008U1C-VF10

K6T4008U1C-MF70

K6T4008U1C-MF85

K6T4008U1C-MF10

K6T4008U1C-TF70

K6T4008U1C-TF85

K6T4008U1C-TF10

K6T4008U1C-YF70

K6T4008U1C-YF85

K6T4008U1C-YF10

32-SOP, 70ns, 3.0V, LL

32-SOP, 85ns, 3.0V, LL

32-SOP, 100ns, 3.0V, LL

32-TSOP2-F, 70ns, 3.0V, LL

32-TSOP2-F, 85ns, 3.0V, LL

32-TSOP2-F, 100ns, 3.0V, LL

32-TSOP2-R, 70ns, 3.0V, LL

32-TSOP2-R, 85ns, 3.0V, LL

32-TSOP2-R, 100ns, 3.0V, LL

32-TSOP1-F, 70ns, 3.0V, LL

32-TSOP1-F, 85ns, 3.0V, LL

32-TSOP1-F, 100ns, 3.0V, LL

32-sTSOP1-F, 70ns, 3.0V, LL

32-sTSOP1-F, 85ns, 3.0V, LL

32-sTSOP1-F, 100ns, 3.0V, LL

32-TSOP2-F, 70ns, 3.0V, LL

32-TSOP2-F, 85ns, 3.0V, LL

32-TSOP2-F, 100ns, 3.0V, LL

32-TSOP2-R, 70ns, 3.0V, LL

32-TSOP2-R, 85ns, 3.0V, LL

32-TSOP2-R, 100ns, 3.0V, LL

32-TSOP1-F, 70ns, 3.0V, LL

32-TSOP1-F, 85ns, 3.0V, LL

32-TSOP1-F, 100ns, 3.0V, LL

32-sTSOP1-F, 70ns, 3.0V, LL

32-sTSOP1-F, 85ns, 3.0V, LL

32-sTSOP1-F, 100ns, 3.0V, LL

FUNCTIONAL DESCRIPTION

I/O

High-Z

Dout

Mode

Power

Standby

Active

X¹⁾

Deselected

Output Disabled

Read

Active

X¹⁾

Din

Write

Active

1. X means don¢t care (Must be in low or high state)

ABSOLUTE MAXIMUM RATINGS¹⁾

Item

Symbol

VIN,VOUT

VCC

Ratings

Unit

Remark

Voltage on any pin relative to Vss

Voltage on Vcc supply relative to Vss

Power Dissipation

-0.5 to VCC+0.5

-0.3 to 4.6

1.0

Storage temperature

TSTG

-65 to 150

0 to 70

°C

K6T4008V1C-L, K6T4008U1C-L

K6T4008V1C-P, K6T4008U1C-P

Operating Temperature

-40 to 85

1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be

restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Revision 1.0

January 1999

K6T4008V1C, K6T4008U1C Family

CMOS SRAM

RECOMMENDED DC OPERATING CONDITIONS¹⁾

Item

Symbol

Product

Min

Typ

Max

Unit

K6T4008V1C Family

K6T4008U1C Family

3.0

2.7

3.3

3.0

3.6

3.3

Supply voltage

Vcc

Ground

Vss

VIH

VIL

All Family

Vcc+0.3²⁾

0.6

Input high voltage

Input low voltage

Note:

K6T4008V1C, K6T4008U1C Family

2.2

-0.3³⁾

1. Commercial Product : TA=0 to 70°C, otherwise specified

Industrial Product : TA=-40 to 85°C, otherwise specified

2. Overshoot : VCC+2.0V in case of pulse width £ 30ns

3. Undershoot : -2.0V in case of pulse width £ 30ns

4. Overshoot and undershoot are sampled, not 100% tested.

CAPACITANCE¹⁾(f=1MHz, TA=25°C)

Item

Input capacitance

Symbol

CIN

Test Condition

VIN=0V

Min

Max

Unit

Input/Output capacitance

CIO

VIO=0V

1. Capacitance is sampled, not 100% tested

DC AND OPERATING CHARACTERISTICS

Item

Symbol

ILI

Test Conditions

Min Typ Max Unit

Input leakage current

Output leakage current

Operating power supply current

VIN=Vss to Vcc

-1

ILO

CS=VIH or OE=VIH or WE=VIL VIO=Vss to Vcc

IIO=0mA, CS=VIL, VIN=VIL or VIH, Read

-1

ICC

Cycle time=1ms, 100% duty, IIO=0mA CS£0.2V,VIN£0.2V or VIN³ Vcc-0.2V

Cycle time=Min, 100% duty, IIO=0mA, CS=VIL, VIN=VIH or VIL

IOL=2.1mA

ICC1

ICC2

VOL

VOH

ISB

Average operating current

0.4

Output low voltage

Output high voltage

Standby Current(TTL)

2.2

IOH=-1.0mA

CS=VIH, Other inputs = VIL or VIH

CS³ Vcc-0.2V, Other inputs=0~Vcc

0.3 mA

15¹⁾

Standby Current (CMOS)

ISB1

1. Industrial product = 20mA

Revision 1.0

January 1999

K6T4008V1C, K6T4008U1C Family

CMOS SRAM

AC OPERATING CONDITIONS

TEST CONDITIONS(Test Load and Input/Output Reference)

Input pulse level: 0.4 to 2.2V

Input rising and falling time: 5ns

Input and output reference voltage:1.5V

Output load(see right): CL=100pF+1TTL

CL =30pF+1TTL

1. Including scope and jig capacitance

1. 70ns product

AC CHARACTERISTICS (K6T4008V1C Family: Vcc=3.0~3.6V, K6T4008U1C Family: Vcc=2.7~3.3V

Commercial product:: TA=0 to 70°C, Industrial product: TA=-40 to 85°C)

Speed Bins

Parameter List

Symbol

Units

70ns

Max

85ns

Max

100ns

Min

Max

Read cycle time

tRC

tAA

100

Address access time

100

Chip select to output

tCO

tOE

100

Output enable to valid output

Chip select to low-Z output

Output enable to low-Z output

Chip disable to high-Z output

Output disable to high-Z output

Output hold from address change

Write cycle time

Read

tLZ

tOLZ

tHZ

tOHZ

tOH

tWC

tCW

tAS

100

Chip select to end of write

Address set-up time

Address valid to end of write

Write pulse width

tAW

tWP

tWR

tWHZ

tDW

tDH

Write

Write recovery time

Write to output high-Z

Data to write time overlap

Data hold from write time

End write to output low-Z

tOW

DATA RETENTION CHARACTERISTICS

Item

Symbol

Test Condition

CS³ Vcc-0.2V

Vcc=3.0V, CS³ Vcc-0.2V

Min

2.0

Typ

Max

Unit

Vcc for data retention

Data retention current

Data retention set-up time

VDR

0.5

3.6

15¹⁾

IDR

tSDR

See data retention waveform

Recovery time

tRDR

1. Industrial product = 20mA

Revision 1.0

January 1999

K6T4008V1C, K6T4008U1C Family

CMOS SRAM

TIMMING DIAGRAMS

TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH)

tRC

Address

tAA

tOH

Data Valid

Data Out

Previous Data Valid

TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)

tRC

Address

tOH

tAA

tCO1

tHZ

tOE

tOLZ

tLZ

tOHZ

High-Z

Data out

Data Valid

NOTES (READ CYCLE)

1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage

levels.

2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device

interconnection.

Revision 1.0

January 1999

K6T4008V1C, K6T4008U1C Family

CMOS SRAM

TIMING WAVEFORM OF WRITE CYCLE(1) (WE Controlled)

tWC

Address

tCW(2)

tWR(4)

tAW

tWP(1)

tAS(3)

tDW

tDH

Data Valid

Data in

tWHZ

tOW

Data Undefined

Data out

TIMING WAVEFORM OF WRITE CYCLE(2) (CS Controlled)

tWC

Address

tCW(2)

tAS(3)

tWR(4)

tAW

tWP(1)

tDW

tDH

Data in

Data Valid

High-Z

Data out

High-Z

NOTES (WRITE CYCLE)

1. A write occurs during the overlap of a low CS and a low WE. A write begins at the latest transition among CS going Low and WE

going low : A write end at the earliest transition among CS going high and WE going high, tWP is measured from the begining of write

to the end of write.

2. tCW is measured from the CS going low to end of write.

3. tAS is measured from the address valid to the beginning of write.

4. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CS or WE going high.

DATA RETENTION WAVE FORM

CS controlled

Data Retention Mode

tSDR

tRDR

VCC

3.0/2.7V

2.2V

VDR

CS³ VCC - 0.2V

GND

Revision 1.0

January 1999

K6T4008V1C, K6T4008U1C Family

CMOS SRAM

PACKAGE DIMENSIONS

Units: millimeters(inches)

32 PIN PLASTIC SMALL OUTLINE PACKAGE (525mil)

0~8°

#32

#17

11.43±0.20

0.450±0.008

14.12±0.30

0.556±0.012

0.80±0.20

0.031±0.008

+0.10

-0.05

#16

0.20

2.74±0.20

0.108±0.008

20.87

0.822

+0.004

0.008

MAX

-0.002

3.00

MAX

0.118

20.47±0.20

0.806±0.008

0.10 MAX

0.004 MAX

+0.100

-0.050

0.41

1.27

0.050

0.71

0.028

+0.004

-0.002

0.05

0.002

(

)

0.016

MIN

Revision 1.0

January 1999

K6T4008V1C, K6T4008U1C Family

PACKAGE DIMENSIONS

CMOS SRAM

Units: millimeters(inches)

32 PIN THIN SMALL OUTLINE PACKAGE TYPE I (0820F)

+0.10

-0.05

+0.004

20.00±0.20

0.787±0.008

0.20

0.008

-0.002

#32

0.25

0.010

(

)

8.40

0.331

MAX

0.50

0.0197

#17

#16

1.00±0.10

0.039±0.004

0.05

0.002

MIN

1.20

MAX

0.047

18.40±0.10

0.724±0.004

0.25

0.010

TYP

+0.10

-0.05

0.15

+0.004

0.006

-0.002

0~8°

0.50

0.020

0.45 ~0.75

0.018 ~0.030

(

)

32 PIN SMALLER THIN SMALL OUTLINE PACKAGE TYPE I (0813.4F)

+0.10

-0.05

+0.004

0.20

13.40±0.10

0.528±0.008

0.008

-0.002

#32

0.25

0.010

(

)

8.40

0.331

MAX

0.50

0.0197

#16

#17

1.00±0.10

0.039±0.004

0.05

0.002

MIN

1.20

MAX

0.047

0.25

0.010

TYP

11.80±0.10

0.465±0.004

+0.10

-0.05

0.15

0.006^+0.004

-0.002

0~8°

0.50

0.020

0.45 ~0.75

0.018 ~0.030

(

)

Revision 1.0

January 1999

K6T4008V1C, K6T4008U1C Family

PACKAGE DIMENSIONS

CMOS SRAM

Units: millimeters(inches)

0~8°

32 PIN THIN SMALL OUTLINE PACKAGE TYPE II (400F)

0.25

0.010

(

)

#32

#17

0.45~0.75

0.018 ~ 0.030

11.76±0.20

0.463±0.008

#16

0.50

0.020

(

)

+0.10

-0.05

+0.004

-0.002

0.15

21.35

0.841

1.00±0.10

0.039±0.004

MAX

0.006

1.20

0.047

20.95±0.10

0.825±0.004

MAX

0.10 MAX

0.004 MAX

0.05

0.002

MIN

1.27

0.050

0.95

0.037

0.40±0.10

0.016±0.004

(

)

32 PIN THIN SMALL OUTLINE PACKAGE TYPE II (400R)

0~8°

0.25

0.010

(

)

#16

0.45 ~0.75

0.018 ~ 0.030

11.76±0.20

0.463±0.008

#32

#17

0.50

0.020

(

)

+0.10

-0.05

+0.004

-0.002

0.15

21.35

0.841

1.00±0.10

0.039±0.004

MAX

0.006

1.20

0.047

20.95±0.10

0.825±0.004

MAX

0.10 MAX

0.004 MAX

1.27

0.050

0.05

0.002

0.40±0.10

0.016±0.004

0.95

0.037

MIN

(

)

Revision 1.0

January 1999

K6T4008V1C-YF70相关文章

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K6T4008V1C-YF70产品参数

型号:	K6T4008V1C-YF70
是否Rohs认证：	不符合
生命周期：	Obsolete
零件包装代码：	TSOP1
包装说明：	TSOP1, TSSOP32,.56,20
针数：	32
Reach Compliance Code：	compliant
ECCN代码：	3A991.B.2.A
HTS代码：	8542.32.00.41
风险等级：	5.78
最长访问时间：	70 ns
I/O 类型：	COMMON
JESD-30 代码：	R-PDSO-G32
JESD-609代码：	e0
长度：	11.8 mm
内存密度：	4194304 bit
内存集成电路类型：	STANDARD SRAM
内存宽度：	8
功能数量：	1
端子数量：	32
字数：	524288 words
字数代码：	512000
工作模式：	ASYNCHRONOUS
最高工作温度：	85 °C
最低工作温度：	-40 °C
组织：	512KX8
输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY
封装代码：	TSOP1
封装等效代码：	TSSOP32,.56,20
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, THIN PROFILE
并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	NOT SPECIFIED
电源：	3.3 V
认证状态：	Not Qualified
座面最大高度：	1.2 mm
最小待机电流：	2 V
子类别：	SRAMs
最大压摆率：	0.03 mA
最大供电电压 (Vsup)：	3.6 V
最小供电电压 (Vsup)：	3 V
标称供电电压 (Vsup)：	3.3 V
表面贴装：	YES
技术：	CMOS
温度等级：	INDUSTRIAL
端子面层：	Tin/Lead (Sn/Pb)
端子形式：	GULL WING
端子节距：	0.5 mm
端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	8 mm
Base Number Matches：	1

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