K817P4芯片引脚定义引脚图及功能IC贸易商引脚图技术参数-中国IC网-芯三七

K817P/ K827PH/ K847PH

Vishay Telefunken

Optocoupler with Phototransistor Output

Description

The K817P/ K827PH/ K847PH consist of a photo-

transistor optically coupled to a gallium arsenide

infrared-emitting diode in an 4-lead up to 16-lead

plastic dual inline package.

The elements are mounted on one leadframe using

a coplanar technique, providing a fixed distance

between input and output for highest safety

requirements.

Applications

Programmable logic controllers, modems, answering

machines, general applications

14925

Features

Coll. Emitter

Endstackable to 2.54 mm (0.1’) spacing

DC isolation test voltage V = 5 kV

IO

Low coupling capacitance of typical 0.3 pF

Current Transfer Ratio (CTR) selected into

groups

Low temperature coefficient of CTR

Wide ambient temperature range

Anode Cath.

4 PIN

8 PIN

Underwriters Laboratory (UL) 1577 recognized,

file number E-76222

16 PIN

CSA (C–UL) 1577 recognized,

file number E-76222 – Double Protection

C

Coupling System U

Order Instruction

Ordering Code

CTR Ranking

50 to 600%

Remarks

K817P

4 Pin = Single channel

8 Pin = Dual channel

16 Pin = Quad channel

4 Pin = Single channel

K827PH

K847PH

K817P1

K817P2

K817P3

K817P4

K817P5

K817P6

K817P7

K827P8

K817P9

50 to 600%

40 to 80%

63 to 125%

100 to 200%

160 to 320%

50 to 150%

100 to 300%

80 to 160%

130 to 260%

200 to 400%

Rev. A2, 11–Jan–99

177

K817P/ K827PH/ K847PH

Vishay Telefunken

Absolute Maximum Ratings

Input (Emitter)

Parameter

Reverse voltage

Test Conditions

Symbol

Value

6

Unit

V

R

Forward current

I

60

mA

A

mW

C

F

Forward surge current

Power dissipation

Junction temperature

t ≤ 10 s

I

1.5

100

125

p

FSM

T

≤ 25 C

P

T

amb

V

j

Output (Detector)

Parameter

Collector emitter voltage

Emitter collector voltage

Collector current

Peak collector current

Power dissipation

Test Conditions

Symbol

Value

70

7

Unit

V

mA

mW

C

V

CEO

ECO

I

C

50

t /T = 0.5, t ≤ 10 ms

I

100

150

125

p

CM

T

amb

≤ 25 C

P

V

T

j

Junction temperature

Coupler

Parameter

Test Conditions

Symbol

V

IO

Value

5

Unit

kV

1)

AC isolation test voltage (RMS) t = 1 min

Total power dissipation

Operating ambient temperature

range

T

amb

≤ 25 C

P

T

amb

250

–40 to +100

mW

C

tot

Storage temperature range

Soldering temperature

T

sd

–55 to +125

260

C

stg

2 mm from case, t ≤ 10 s

1)

Related to standard climate 23/50 DIN 50014

178

Rev. A2, 11–Jan–99

K817P/ K827PH/ K847PH

Vishay Telefunken

Electrical Characteristics (T_amb= 25°C)

Input (Emitter)

Parameter

Forward voltage

Junction capacitance

Test Conditions

I = 50 mA

V = 0 V, f = 1 MHz

R

Symbol

Min.

Typ.

1.25

50

Max.

1.6

Unit

V

pF

V

F

C

j

Output (Detector)

Parameter

Collector emitter voltage I = 100 A

Emitter collector voltage

Collector dark current

Test Conditions

Symbol

Min.

70

7

Typ.

Max.

100

Unit

V

C

CEO

ECO

CEO

I = 100 A

E

V

CE

= 20 V, I = 0, E = 0

I

nA

F

Coupler

Parameter

Collector emitter

saturation voltage

Test Conditions

Symbol

V

CEsat

Min.

Typ.

Max.

0.3

Unit

V

I = 10 mA, I = 1 mA

F

C

Cut-off frequency

I = 10 mA, V = 5 V,

f

c

100

0.3

kHz

pF

F

CE

R = 100

L

Coupling capacitance

f = 1 MHz

C

k

Current Transfer Ratio (CTR)

Parameter

I /I

Test Conditions

= 5 V, I = 5 mA

Type

K817P

Symbol

CTR

Min.

0.5

0.4

0.63

1.0

1.6

0.5

1.0

0.8

1.3

2.0

Typ.

Max.

6.0

0.8

1.25

2.0

3.2

1.5

3.0

1.6

2.6

4.0

Unit

V

CE

V

CE

V

CE

V

CE

V

CE

V

CE

V

CE

V

CE

V

CE

V

CE

V

CE

V

CE

C F

F

= 5 V, I = 5 mA

K827PH

K847PH

K817P1

K817P2

K817P3

K817P4

K817P5

K817P6

K817P7

K817P8

K817P9

F

= 5 V, I = 5 mA

F

= 5 V, I = 10 mA

F

= 5 V, I = 10 mA

F

= 5 V, I = 10 mA

F

= 5 V, I = 10 mA

F

= 5 V, I = 5 mA

F

= 5 V, I = 5 mA

F

= 5 V, I = 5 mA

F

= 5 V, I = 5 mA

F

= 5 V, I = 5 mA

F

Rev. A2, 11–Jan–99

179

K817P/ K827PH/ K847PH

Vishay Telefunken

Switching Characteristics

Parameter

Delay time

Rise time

Test Conditions

V = 5 V, I = 2 mA, R = 100 (see figure 1)

Symbol

Typ.

3.0

4.7

0.3

6.0

5.0

9.0

18.0

Unit

s

t

d

S

C

L

t

r

Fall time

t

f

Storage time

Turn-on time

Turn-off time

Turn-on time

Turn-off time

t

s

t

on

off

on

off

t

V = 5 V, I = 10 mA, R = 1 k (see figure 2)

S

F

L

I

+ 5 V

I

F

0

Adjusted through

input amplitude

I

= 2 mA ;

C

R

= 50

G

96 11698

t

p

= 0.01

I

F

T

t = 50

s

p

Channel I

Channel II

0

Oscilloscope

t

p

R = 1 M

L

C = 20 pF

50

100

L

I

C

95 10804

100%

90%

Figure 1. Test circuit, non-saturated operation

10%

0

+ 5 V

I

I = 10 mA

F

t

0

t

r

I

C

R

G

= 50

t

d

t

s

t

f

t_p

0.01

T

t

on

t

off

t = 50

p

s

t

pulse dura-

t

storage time

fall time

turn-off time

p

s

tion

Channel I

Channel II

f

Oscilloscope

t

delay time

rise time

turn-on time

(= t + t )

d

off

s

f

r

R ≥ 1 M

L

(= t + t )

on

d

r

C ≤ 20 pF

L

50

1 k

95 10843

Figure 2. Test circuit, saturated operation

Figure 3. Switching times

180

Rev. A2, 11–Jan–99

K817P/ K827PH/ K847PH

Vishay Telefunken

Typical Characteristics (T_amb= 25 C, unless otherwise specified)

10000

1000

100

10

300

250

200

150

100

50

Coupled device

V

I =0

F

=20V

CE

Phototransistor

IR-diode

0

1

100

0

40

80

120

0

25

50

75

96 11700

T

– Ambient Temperature (

95 11026

T

– Ambient Temperature ( °C )

amb

°

C )

Figure 4. Total Power Dissipation vs.

Ambient Temperature

Figure 7. Collector Dark Current vs.

Ambient Temperature

100

1000.0

V

CE

=5V

10

1

100.0

10.0

1.0

0.1

0.01

0.1

100

0

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

0.1

1

10

96 11862

V – Forward Voltage ( V )

F

95 11027

I – Forward Current ( mA )

F

Figure 5. Forward Current vs. Forward Voltage

Figure 8. Collector Current vs. Forward Current

2.0

100

20mA

V

CE

=5V

I =5mA

F

I =50mA

F

1.5

1.0

0.5

0

10mA

5mA

10

1

2mA

1mA

0.1

100

–25

0

25

50

75

0.1

1

10

95 11025

T

amb

– Ambient Temperature ( °C )

95 10985

V

CE

– Collector Emitter Voltage ( V )

Figure 6. Relative Current Transfer Ratio vs.

Ambient Temperature

Figure 9. Collector Current vs. Collector Emitter Voltage

Rev. A2, 11–Jan–99

181

K817P/ K827PH/ K847PH

Vishay Telefunken

1.0

50

40

30

20%

Saturated Operation

V =5V

0.8

S

R =1k

L

CTR=50%

0.6

0.4

t

off

20

10

0

0.2

10%

on

0

100

20

1

10

0

5

10

15

95 11028

I

– Collector Current ( mA )

95 11031

I – Forward Current ( mA )

F

C

Figure 10. Collector Emitter Saturation Voltage vs.

Collector Current

Figure 12. Turn on / off Time vs. Forward Current

1000

10

Non Saturated

Operation

V

CE

=5V

V =5V

8

6

S

t

R =100

L

on

100

10

1

off

4

2

0

100

10

0.1

1

10

0

2

4

6

95 11029

I – Forward Current ( mA )

F

95 11030

I

C

– Collector Current ( mA )

Figure 11. Current Transfer Ratio vs. Forward Current

Figure 13. Turn on / off Time vs. Collector Current

Type

Pin 1 Indication

K817P

820UTK63

15080

Company Production

Logo Location

Date

Code

(YM)

Coupling

System

Indicator

Figure 14. Marking example

182

Rev. A2, 11–Jan–99

K817P/ K827PH/ K847PH

Vishay Telefunken

Dimensions of K817P. in mm

weight:

creepage distance: 6 mm

air path: 6 mm

ca. 0.25 g

after mounting on PC board

14789

Dimensions of K827PH in mm

weight:

ca. 0.55 g

creepage distance:

air path:

6 mm

after mounting on PC board

14784

Rev. A2, 11–Jan–99

183

K817P/ K827PH/ K847PH

Vishay Telefunken

Dimensions of K847PH in mm

weight:

creepage distance: 6 mm

air path: 6 mm

ca. 1.0 g

after mounting on PC board

14783

184

Rev. A2, 11–Jan–99

型号:	K817P4
是否Rohs认证：	不符合
生命周期：	Transferred
Reach Compliance Code：	unknown
风险等级：	5.86
Is Samacsys：	N
当前传输比率-最小值：	160%
最大正向电流：	0.06 A
最大正向电压：	1.6 V
最大绝缘电压：	5000 V
JESD-609代码：	e0
安装特点：	THROUGH HOLE MOUNT
元件数量：	1
最大通态电流：	0.05 A
最高工作温度：	100 °C
最低工作温度：	-40 °C
最大功率耗散：	0.15 W
子类别：	Optocoupler - Transistor Outputs
表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

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