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  • 北京元坤伟业科技有限公司

         该会员已使用本站17年以上

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  • 深圳市集创讯科技有限公司

     该会员已使用本站5年以上
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  • 数量14500 
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  • 深圳市芯脉实业有限公司

     该会员已使用本站11年以上
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  • 数量69850 
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  • 北京元坤伟业科技有限公司

     该会员已使用本站17年以上
  • K8D3216UBC-PI07 现货库存
  • 数量5000 
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  • 深圳市欧立现代科技有限公司

     该会员已使用本站12年以上
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  • 数量5800 
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  • 深圳市芯脉实业有限公司

     该会员已使用本站11年以上
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  • 数量6980 
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  • 上海金庆电子技术有限公司

     该会员已使用本站15年以上
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  • 数量357 
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  • 深圳市宏世佳电子科技有限公司

     该会员已使用本站13年以上
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  • 数量3875 
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  • 集好芯城

     该会员已使用本站13年以上
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  • 数量16938 
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  • 深圳市晶美隆科技有限公司

     该会员已使用本站15年以上
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  • 数量14500 
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  • 深圳市华斯顿电子科技有限公司

     该会员已使用本站16年以上
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  • 数量13050 
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  • 北京齐天芯科技有限公司

     该会员已使用本站15年以上
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  • 数量10000 
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  • HECC GROUP CO.,LIMITED

     该会员已使用本站17年以上
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  • HECC GROUP CO.,LIMITED

     该会员已使用本站17年以上
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  • 数量11500 
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  • 北京元坤伟业科技有限公司

     该会员已使用本站17年以上
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  • 数量5000 
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     该会员已使用本站17年以上
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  • 数量11500 
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     该会员已使用本站15年以上
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     该会员已使用本站7年以上
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  • 数量10500 
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  • 深圳市得捷芯城科技有限公司

     该会员已使用本站11年以上
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  • 数量3737 
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  • 深圳市励创源科技有限公司

     该会员已使用本站2年以上
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  • 数量35600 
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  • 深圳市亿智腾科技有限公司

     该会员已使用本站8年以上
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  • 数量16680 
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  • 封装TSSOP48 
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  • 深圳市华斯顿电子科技有限公司

     该会员已使用本站16年以上
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  • 数量12500 
  • 厂家SAMSUNG 
  • 封装TSOP48 
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  • 深圳市湘达电子有限公司

     该会员已使用本站10年以上
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  • 数量3500 
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  • 深圳市赛尔通科技有限公司

     该会员已使用本站12年以上
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  • 数量12850 
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  • 深圳市宏捷佳电子科技有限公司

     该会员已使用本站12年以上
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  • 数量8230 
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  • 封装TSOP48 
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  • 深圳市卓越微芯电子有限公司

     该会员已使用本站12年以上
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  • 数量6500 
  • 厂家Samsung 
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  • 百分百原装正品 真实公司现货库存 本公司只做原装 可开13%增值税发票,支持样品,欢迎来电咨询!
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  • HECC GROUP CO.,LIMITED

     该会员已使用本站17年以上
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  • 数量1259 
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  • 深圳市宏捷佳电子科技有限公司

     该会员已使用本站12年以上
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  • 数量85211 
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  • 数量6654 
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  • 深圳市瑞天芯科技有限公司

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  • 数量6890000 
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     该会员已使用本站9年以上
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  • 深圳市华科泰电子商行

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  • 数量960 
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  • 封装TSOP-48 
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  • 深圳市欧立现代科技有限公司

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  • 深圳市宏诺德电子科技有限公司

     该会员已使用本站8年以上
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  • 数量68000 
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  • 长荣电子

     该会员已使用本站14年以上
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  • 厂家SAMSUNG 
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  • 深圳市羿芯诚电子有限公司

     该会员已使用本站7年以上
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  • 深圳市创思克科技有限公司

     该会员已使用本站2年以上
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     该会员已使用本站13年以上
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  • 数量649 
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  • 深圳市芯脉实业有限公司

     该会员已使用本站11年以上
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  • 深圳市一线半导体有限公司

     该会员已使用本站11年以上
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产品型号K8D3216UBC-PI07的概述

K8D3216UBC-PI07 芯片概述 K8D3216UBC-PI07 是一款高性能、低功耗的动态随机存取存储器(DRAM)芯片,属于三星电子旗下的一款存储产品。该芯片主要用于计算机系统、移动设备、服务器及其他电子设备的内存扩展,具有良好的数据传输率和存储能力。其设计旨在满足现代计算需求,提供快速的数据存取速度和高效率的能量管理,尤其适用于多任务处理及高需求的应用场景。 详细参数 K8D3216UBC-PI07 的一些关键参数如下: - 存储容量:32MB - 数据总线宽度:16位 - 存储类型:DRAM - 工作电压:3.3V - 访问时间:在特定条件下可达到70纳秒 - 封装形式:TSOP II(Thin Small Outline Package II) - 工作温度范围:-40°C 至 85°C,全工业温度标准 - 写入周期:6ns - 读取周期:8ns - 引脚数:44引脚...

产品型号K8D3216UBC-PI07的Datasheet PDF文件预览

K8D3x16UTC / K8D3x16UBC  
NOR FLASH MEMORY  
Document Title  
32M Bit (4M x8/2M x16) Dual Bank NOR Flash Memory  
Revision History  
Revision No. History  
Draft Date  
Remark  
0.0  
1.0  
1.1  
Initial Draft  
June 18, 2002  
Preliminary  
Final Specification  
November 13, 2002  
Not support 48TSOP1 Package  
Not support 16M/16M BANK partition  
November 18, 2003 Final  
July 16, 2004  
1.2  
1.3  
1.4  
1.5  
1.6  
1.7  
Support 48TSOP1 Package  
Support 48TSOP1 Lead Free Package  
Support 48FBGA Leaded/Lead Free Package  
Complement status flag check algorithm  
tCS timing is modified  
September 16,  
2004  
March 16, 2005  
June 2, 2005  
August 25,2006  
September 7, 2006  
"Asynchronous mode may not support read following four sequential  
invalid read condition within 200ns." is added  
1
Revision 1.7  
September, 2006  
K8D3x16UTC / K8D3x16UBC  
NOR FLASH MEMORY  
32M Bit (4M x8/2M x16) Dual Bank NOR Flash Memory  
FEATURES  
Single Voltage, 2.7V to 3.6V for Read and Write operations  
Organization  
4,194,304 x 8 bit (Byte mode) / 2,097,152 x 16 bit (Word mode)  
Fast Read Access Time : 70ns  
Read While Program/Erase Operation  
Dual Bank architectures  
GENERAL DESCRIPTION  
The K8D3216U featuring single 3.0V power supply, is a 32Mbit  
NOR-type Flash Memory organized as 4Mx8 or 2M x16. The  
memory architecture of the device is designed to divide its  
memory arrays into 71 blocks to be protected by the block  
group. This block architecture provides highly flexible erase and  
program capability. The K8D3216U NOR Flash consists of two  
banks. This device is capable of reading data from one bank  
while programming or erasing in the other bank. Access times  
of 70ns, 80ns and 90ns are available for the device. The  
devices fast access times allow high speed microprocessors to  
operate without wait states. The device performs a program  
operation in units of 8 bits (Byte) or 16 bits (Word) and erases in  
units of a block. Single or multiple blocks can be erased. The  
block erase operation is completed within typically 0.7 sec. The  
device requires 15mA as program/erase current in the standard  
and industrial temperature ranges.  
Bank 1 / Bank 2 : 8Mb / 24Mb  
Secode(Security Code) Block : Extra 64K Byte block  
Power Consumption (typical value @5MHz)  
- Read Current : 14mA  
- Program/Erase Current : 15mA  
- Read While Program or Read While Erase Current : 25mA  
- Standby Mode/Auto Sleep Mode : 5µA  
WP/ACC input pin  
- Allows special protection of two outermost boot blocks at VIL,  
regardless of block protect status  
- Removes special protection of two outermost boot block at VIH,  
the two blocks return to normal block protect status  
- Program time at VHH : 9µs/word  
Erase Suspend/Resume  
Unlock Bypass Program  
The K8D3216U NOR Flash Memory is created by using Sam-  
sung's advanced CMOS process technology. This device is  
available in 48 pin TSOP1 and 48 ball TBGA, FBGA packages.  
The device is compatible with EPROM applications to require  
high-density and cost-effective nonvolatile read/write storage  
solutions.  
Hardware RESET Pin  
Command Register Operation  
Block Group Protection / Unprotection  
Supports Common Flash Memory Interface  
Industrial Temperature : -40°C to 85°C  
Endurance : 100,000 Program/Erase Cycles Minimum  
Data Retention : 10 years  
Package : 48 Pin TSOP1 : 12 x 20 mm / 0.5 mm Pin pitch  
48 Ball TBGA : 6 x 8.5 mm / 0.8 mm Ball pitch  
48 Ball FBGA : 6 x 8.5 mm / 0.8 mm Ball pitch  
PIN DESCRIPTION  
Pin Name  
A0 - A20  
Pin Function  
Address Inputs  
PIN CONFIGURATION  
DQ0 - DQ14  
Data Inputs / Outputs  
DQ15 Data Input / Output  
A-1 LSB Address  
1
2
3
4
5
6
7
8
48  
47  
46  
45  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
A16  
BYTE  
Vss  
A15  
A14  
A13  
A12  
A11  
A10  
A9  
DQ15/A-1  
DQ15/A-1  
DQ7  
DQ14  
DQ6  
DQ13  
DQ5  
DQ12  
DQ4  
Vcc  
DQ11  
DQ3  
DQ10  
DQ2  
DQ9  
DQ1  
DQ8  
DQ0  
OE  
BYTE  
CE  
Word / Byte Selection  
Chip Enable  
A8  
A19  
A20  
WE  
RESET  
N.C  
WP/ACC  
RY/BY  
A18  
A17  
A7  
9
48-pin TSOP1  
Standard Type  
12mm x 20mm  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
OE  
Output Enable  
RESET  
RY/BY  
WE  
Hardware Reset Pin  
Ready/Busy Output  
Write Enable  
A6  
A5  
A4  
A3  
A2  
A1  
Vss  
CE  
A0  
Hardware Write Protection/Program  
Acceleration  
WP/ACC  
Note :  
Please refer to the package dimension.  
Vcc  
VSS  
N.C  
Power Supply  
Ground  
No Connection  
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.  
2
Revision 1.7  
September, 2006  
K8D3x16UTC / K8D3x16UBC  
NOR FLASH MEMORY  
48 Ball TBGA/FBGA TOP VIEW (BALL DOWN)  
2
3
4
5
6
1
RY/BY  
A
B
C
D
E
F
A3  
A4  
A2  
A1  
A7  
A17  
A6  
WE  
RESET  
N.C  
A9  
A8  
A13  
A12  
WP/  
ACC  
A18  
A20  
A10  
A14  
A5  
A19  
A11  
A15  
A0  
CE  
OE  
VSS  
DQ0  
DQ8  
DQ9  
DQ1  
DQ2  
DQ10  
DQ11  
DQ3  
DQ5  
DQ12  
VCC  
DQ7  
DQ14  
DQ13  
DQ6  
A16  
BYTE  
DQ15/  
A-1  
G
H
DQ4  
VSS  
FUNCTIONAL BLOCK DIAGRAM  
Bank1  
Address  
Bank1  
Cell Array  
X
Vcc  
Dec  
Vss  
Latch &  
Control  
Y Dec  
CE  
Bank1 Data-In/Out  
OE  
WE  
I/O  
Interface  
&
Bank2 Data-In/Out  
Latch &  
Control  
BYTE  
Y Dec  
Bank  
RESET  
RY/BY  
WP/ACC  
Control  
Bank2  
Address  
Bank2  
Cell Array  
X
Dec  
A0~A20  
DQ15/A-1  
Erase  
Control  
DQ0~DQ14  
High  
Voltage  
Gen.  
Program  
Control  
3
Revision 1.7  
September, 2006  
K8D3x16UTC / K8D3x16UBC  
NOR FLASH MEMORY  
ORDERING INFORMATION  
K 8 D 3x 1 6 U T C - T I 0 7  
Access Time  
07 = 70 ns  
08 = 80 ns  
09 = 90 ns  
Samsung  
NOR Flash Memory  
Device Type  
Dual Bank Boot Block  
Operating Temperature Range  
C = Commercial Temp. (0 °C to 70 °C)  
I = Industrial Temp. (-40 °C to 85 °C)  
Package  
P=48TSOP1(Lead-Free) Y=48TSOP1  
Bank Division  
32 = 8Mbits + 24Mbits  
D : FBGA(Lead Free)  
L : TBGA(Lead Free)  
F : FBGA  
T : TBGA  
Organization  
x8/x16 Selectable  
Version  
C = 4th Generation  
Block Architecture  
T = Top Boot Block  
B = Bottom Boot Block  
Operating Voltage Range  
2.7V to 3.6V  
Table 1. PRODUCT LINE-UP  
Part No.  
- 7  
-8  
-9  
Vcc  
2.7V~3.6V  
80ns  
Max. Address Access Time (ns)  
Max. CE Access Time (ns)  
Max. OE Access Time (ns)  
70ns  
70ns  
25ns  
90ns  
80ns  
90ns  
35ns  
25ns  
Table 2. K8D3216U DEVICE BANK DIVISIONS  
Device  
Part Number  
Bank 1  
Block Sizes  
Bank 2  
Mbit  
Mbit  
Block Sizes  
Forty-eight  
64 Kbyte/32 Kword  
Eight 8 Kbyte/4 Kword,  
fifteen 64 Kbyte/32 Kword  
K8D3216U  
8 Mbit  
24 Mbit  
4
Revision 1.7  
September, 2006  
K8D3x16UTC / K8D3x16UBC  
NOR FLASH MEMORY  
Table 3. Top Boot Block Address (K8D3216UT)  
Block Address  
Address Range  
Block Size  
(KB/KW)  
K8D3216UT  
Block  
A20 A19 A18 A17 A16 A15 A14 A13 A12  
Byte Mode  
Word Mode  
BA70  
BA69  
BA68  
BA67  
BA66  
BA65  
BA64  
BA63  
BA62  
BA61  
BA60  
BA59  
BA58  
BA57  
BA56  
BA55  
BA54  
BA53  
BA52  
BA51  
BA50  
BA49  
BA48  
BA47  
BA46  
BA45  
BA44  
BA43  
BA42  
BA41  
BA40  
BA39  
BA38  
BA37  
BA36  
BA35  
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
1
1
1
1
1
1
1
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
1
1
1
1
1
1
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
1
1
1
1
1
0
8/4  
3FE000H-3FFFFFH  
3FC000H-3FDFFFH  
3FA000H-3FBFFFH  
3F8000H-3F9FFFH  
3F6000H-3F7FFFH  
3F4000H-3F5FFFH  
3F2000H-3F3FFFH  
3F0000H-3F1FFFH  
3E0000H-3EFFFFH  
3D0000H-3DFFFFH  
3C0000H-3CFFFFH  
3B0000H-3BFFFFH  
3A0000H-3AFFFFH  
390000H-39FFFFH  
380000H-38FFFFH  
370000H-37FFFFH  
360000H-36FFFFH  
350000H-35FFFFH  
340000H-34FFFFH  
330000H-33FFFFH  
320000H-32FFFFH  
310000H-31FFFFH  
300000H-30FFFFH  
2F0000H-2FFFFFH  
2E0000H-2EFFFFH  
2D0000H-2DFFFFH  
2C0000H-2CFFFFH  
2B0000H-2BFFFFH  
2A0000H-2AFFFFH  
290000H-29FFFFH  
280000H-28FFFFH  
270000H-27FFFFH  
260000H-26FFFFH  
250000H-25FFFFH  
240000H-24FFFFH  
230000H-23FFFFH  
1FF000H-1FFFFFH  
1FE000H-1FEFFFH  
1FD000H-1FDFFFH  
1FC000H-1FCFFFH  
1FB000H-1FBFFFH  
1FA000H-1FAFFFH  
1F9000H-1F9FFFH  
1F8000H-1F8FFFH  
1F0000H-1F7FFFH  
1E8000H-1EFFFFH  
1E0000H-1E7FFFH  
1D8000H-1DFFFFH  
1D0000H-1D7FFFH  
1C8000H-1CFFFFH  
1C0000H-1C7FFFH  
1B8000H-1BFFFFH  
1B0000H-1B7FFFH  
1A8000H-1AFFFFH  
1A0000H-1A7FFFH  
198000H-19FFFFH  
190000H-197FFFH  
188000H-18FFFFH  
180000H-187FFFH  
178000H-17FFFFH  
170000H-177FFFH  
168000H-16FFFFH  
160000H-167FFFH  
158000H-15FFFFH  
150000H-157FFFH  
148000H-14FFFFH  
140000H-147FFFH  
138000H-13FFFFH  
130000H-137FFFH  
128000H-12FFFFH  
120000H-127FFFH  
118000H-11FFFFH  
8/4  
1
0
1
8/4  
1
0
0
8/4  
0
1
1
8/4  
0
1
0
8/4  
0
0
1
8/4  
0
0
0
8/4  
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
Bank1  
Bank2  
5
Revision 1.7  
September, 2006  
K8D3x16UTC / K8D3x16UBC  
NOR FLASH MEMORY  
Table 3. Top Boot Block Address (K8D3216UT)  
Block Address  
Address Range  
Block Size  
(KB/KW)  
K8D3216UT  
Block  
A20 A19 A18 A17 A16 A15 A14 A13 A12  
Byte Mode  
Word Mode  
BA34  
BA33  
BA32  
BA31  
BA30  
BA29  
BA28  
BA27  
BA26  
BA25  
BA24  
BA23  
BA22  
BA21  
BA20  
BA19  
BA18  
BA17  
BA16  
BA15  
BA14  
BA13  
BA12  
BA11  
BA10  
BA9  
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
220000H-22FFFFH  
210000H-21FFFFH  
200000H-20FFFFH  
1F0000H-1FFFFFH  
1E0000H-1EFFFFH  
1D0000H-1DFFFFH  
1C0000H-1CFFFFH  
1B0000H-1BFFFFH  
1A0000H-1AFFFFH  
190000H-19FFFFH  
180000H-18FFFFH  
170000H-17FFFFH  
160000H-16FFFFH  
150000H-15FFFFH  
140000H-14FFFFH  
130000H-13FFFFH  
120000H-12FFFFH  
110000H-11FFFFH  
100000H-10FFFFH  
0F0000H-0FFFFFH  
0E0000H-0EFFFFH  
0D0000H-0DFFFFH  
0C0000H-0CFFFFH  
0B0000H-0BFFFFH  
0A0000H-0AFFFFH  
090000H-09FFFFH  
080000H-08FFFFH  
070000H-07FFFFH  
060000H-06FFFFH  
050000H-05FFFFH  
040000H-04FFFFH  
030000H-03FFFFH  
020000H-02FFFFH  
010000H-01FFFFH  
000000H-00FFFFH  
110000H-117FFFH  
108000H-10FFFFH  
100000H-107FFFH  
0F8000H-0FFFFFH  
0F0000H-0F7FFFH  
0E8000H-0EFFFFH  
0E0000H-0E7FFFH  
0D8000H-0DFFFFH  
0D0000H-0D7FFFH  
0C8000H-0CFFFFH  
0C0000H-0C7FFFH  
0B8000H-0BFFFFH  
0B0000H-0B7FFFH  
0A8000H-0AFFFFH  
0A0000H-0A7FFFH  
098000H-09FFFFH  
090000H-097FFFH  
088000H-08FFFFH  
080000H-087FFFH  
078000H-07FFFFH  
070000H-077FFFH  
068000H-06FFFFH  
060000H-067FFFH  
058000H-05FFFFH  
050000H-057FFFH  
048000H-04FFFFH  
040000H-047FFFH  
038000H-03FFFFH  
030000H-037FFFH  
028000H-02FFFFH  
020000H-027FFFH  
018000H-01FFFFH  
010000H-017FFFH  
008000H-00FFFFH  
000000H-007FFFH  
Bank2  
BA8  
BA7  
BA6  
BA5  
BA4  
BA3  
BA2  
BA1  
BA0  
Note : The address range is A20 A-1 in the byte mode ( BYTE = VIL ) or A20 A0 in the word mode ( BYTE = VIH ).  
The bank address bits is A20 A19 for K8D3216UT.  
Table 4. Secode Block Addresses for Top Boot Devices  
Block Address  
A20-A12  
Block  
Size  
(X8)  
Address Range  
(X16)  
Address Range  
Device  
K8D3216UT  
111111xxx  
64/32  
3F0000H-3FFFFFH  
1F8000H-1FFFFFH  
6
Revision 1.7  
September, 2006  
K8D3x16UTC / K8D3x16UBC  
NOR FLASH MEMORY  
Table 5. Bottom Boot Block Address (K8D3216UB)  
Block Address  
Address Range  
Block Size  
(KB/KW)  
K8D3216UB  
Block  
A20 A19 A18 A17 A16 A15 A14 A13 A12  
Byte Mode  
Word Mode  
BA70  
BA69  
BA68  
BA67  
BA66  
BA65  
BA64  
BA63  
BA62  
BA61  
BA60  
BA59  
BA58  
BA57  
BA56  
BA55  
BA54  
BA53  
BA52  
BA51  
BA50  
BA49  
BA48  
BA47  
BA46  
BA45  
BA44  
BA43  
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
3F0000H-3FFFFFH  
3E0000H-3EFFFFH  
3D0000H-3DFFFFH  
3C0000H-3CFFFFH  
3B0000H-3BFFFFH  
3A0000H-3AFFFFH  
390000H-39FFFFH  
380000H-38FFFFH  
370000H-37FFFFH  
360000H-36FFFFH  
350000H-35FFFFH  
340000H-34FFFFH  
330000H-33FFFFH  
320000H-32FFFFH  
310000H-31FFFFH  
300000H-30FFFFH  
2F0000H-2F1FFFH  
2E0000H-2EFFFFH  
2D0000H-2DFFFFH  
2C0000H-2CFFFFH  
2B0000H-2BFFFFH  
2A0000H-2AFFFFH  
290000H-29FFFFH  
280000H-28FFFFH  
270000H-27FFFFH  
260000H-26FFFFH  
250000H-25FFFFH  
240000H-24FFFFH  
1F8000H-1FFFFFH  
1F0000H-1F7FFFH  
1E8000H-1EFFFFH  
1E0000H-1E7FFFH  
1D8000H-1DFFFFH  
1D0000H-1D7FFFH  
1C8000H-1CFFFFH  
1C0000H-1C7FFFH  
1B8000H-1BFFFFH  
1B0000H-1B7FFFH  
1A8000H-1AFFFFH  
1A0000H-1A7FFFH  
198000H-19FFFFH  
190000H-197FFFH  
188000H-18FFFFH  
180000H-187FFFH  
178000H-17FFFFH  
170000H-177FFFH  
168000H-16FFFFH  
160000H-167FFFH  
158000H-15FFFFH  
150000H-157FFFH  
148000H-14FFFFH  
140000H-147FFFH  
138000H-13FFFFH  
130000H-137FFFH  
128000H-12FFFFH  
120000H-127FFFH  
Bank2  
BA42  
BA41  
BA40  
BA39  
BA38  
BA37  
1
1
1
1
0
0
0
0
0
0
1
1
0
0
0
0
1
1
0
0
0
0
1
1
1
1
0
0
1
1
1
0
1
0
1
0
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
230000H-23FFFFH  
220000H-22FFFFH  
210000H-21FFFFH  
200000H-20FFFFH  
1F0000H-1FFFFFH  
1E0000H-1EFFFFH  
118000H-11FFFFH  
110000H-117FFFH  
108000H-10FFFFH  
100000H-107FFFH  
0F8000H-0FFFFFH  
0F0000H-0F7FFFH  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
BA36  
BA35  
0
0
1
1
1
1
1
1
0
0
1
0
X
X
X
X
X
X
1D0000H-1DFFFFH  
1C0000H-1CFFFFH  
0E8000H-0EFFFFH  
0E0000H-0E7FFFH  
7
Revision 1.7  
September, 2006  
K8D3x16UTC / K8D3x16UBC  
NOR FLASH MEMORY  
Table 5. Bottom Block Address (K8D3216UB)  
Block Address  
Address Range  
Block Size  
(KB/KW)  
K8D3216UB  
Block  
A20 A19 A18 A17 A16 A15 A14 A13 A12  
Byte Mode  
Word Mode  
BA34  
BA33  
BA32  
BA31  
BA30  
BA29  
BA28  
BA27  
BA26  
BA25  
BA24  
BA23  
BA22  
BA21  
BA20  
BA19  
BA18  
BA17  
BA16  
BA15  
BA14  
BA13  
BA12  
BA11  
BA10  
BA9  
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
0
0
0
0
0
0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
0
0
0
0
0
0
0
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
1
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
64/32  
8/4  
1B0000H-1BFFFFH  
1A0000H-1AFFFFH  
190000H-19FFFFH  
180000H-18FFFFH  
170000H-17FFFFH  
160000H-16FFFFH  
150000H-15FFFFH  
140000H-14FFFFH  
130000H-13FFFFH  
120000H-12FFFFH  
110000H-11FFFFH  
100000H-10FFFFH  
0F0000H-0FFFFFH  
0E0000H-0EFFFFH  
0D0000H-0DFFFFH  
0C0000H-0CFFFFH  
0B0000H-0BFFFFH  
0A0000H-0AFFFFH  
090000H-09FFFFH  
080000H-08FFFFH  
070000H-07FFFFH  
060000H-06FFFFH  
050000H-05FFFFH  
040000H-04FFFFH  
030000H-03FFFFH  
020000H-02FFFFH  
010000H-01FFFFH  
00E000H-00FFFFH  
00C000H-00DFFFH  
00A000H-00BFFFH  
008000H-009FFFH  
006000H-007FFFH  
004000H-005FFFH  
002000H-003FFFH  
000000H-001FFFH  
0D8000H-0DFFFFH  
0D0000H-0D7FFFH  
0C8000H-0CFFFFH  
0C0000H-0C7FFFH  
0B8000H-0BFFFFH  
0B0000H-0B7FFFH  
0A8000H-0AFFFFH  
0A0000H-0A7FFFH  
098000H-09FFFFH  
090000H-097FFFH  
088000H-08FFFFH  
080000H-087FFFH  
078000H-07FFFFH  
070000H-077FFFH  
068000H-06FFFFH  
060000H-067FFFH  
058000H-05FFFFH  
050000H-057FFFH  
048000H-04FFFFH  
040000H-047FFFH  
038000H-03FFFFH  
030000H-037FFFH  
028000H-02FFFFH  
020000H-027FFFH  
018000H-01FFFFH  
010000H-017FFFH  
008000H-00FFFFH  
007000H-007FFFH  
006000H-006FFFH  
005000H-005FFFH  
004000H-004FFFH  
003000H-003FFFH  
002000H-002FFFH  
001000H-001FFFH  
000000H-000FFFH  
Bank2  
Bank1  
BA8  
BA7  
BA6  
1
1
0
8/4  
BA5  
1
0
1
8/4  
BA4  
1
0
0
8/4  
BA3  
0
1
1
8/4  
BA2  
0
1
0
8/4  
BA1  
0
0
1
8/4  
BA0  
0
0
0
8/4  
Note : The address range is A20 A-1 in the byte mode ( BYTE = VIL ) or A20 A0 in the word mode ( BYTE = VIH ).  
The bank address bits is A20 A19 for K8D3216UB.  
Table 6. Secode Block Addresses for Bottom Boot Devices  
Block Address  
A20-A12  
Block  
Size  
(X8)  
Address Range  
(X16)  
Address Range  
Device  
K8D3216UB  
000000xxx  
64/32  
000000H-00FFFFH  
000000H-007FFFH  
8
Revision 1.7  
September, 2006  
K8D3x16UTC / K8D3x16UBC  
NOR FLASH MEMORY  
PRODUCT INTRODUCTION  
The K8D3216U is a 32Mbit (33,554,432 bits) NOR-type Flash memory. The device features single voltage power supply operating  
within the range of 2.7V to 3.6V. The device is programmed by using the Channel Hot Electron (CHE) injection mechanism which is  
used to program EPROMs. The device is erased electrically by using Fowler-Nordheim tunneling mechanism. To provide highly flex-  
ible erase and program capability, the device adapts a block memory architecture that divides its memory array into 71 blocks (64-  
Kbyte x 63 , 8-Kbyte x 8). Programming is done in units of 8 bits (Byte) or 16 bits (Word). All bits of data in one or multiple blocks can  
be erased simultaneously when the device executes the erase operation. To prevent the device from accidental erasing or over-writ-  
ing the programmed data, 71 memory blocks can be hardware protected by the block group. Byte/Word modes are available for read  
operation. These modes can be selected via BYTE pin. The device provides read access times of 70ns, 80ns and 90ns supporting  
high speed microprocessors to operate without any wait states.  
The command set of K8D3216U is fully compatible with standard Flash devices. The device is controlled by chip enable (CE), output  
enable (OE) and write enable (WE). Device operations are executed by selective command codes. The command codes to be com-  
bined wih addresses and data are sequentially written to the command registers using microprocessor write timing. The command  
codes serve as inputs to an internal state machine which controls the program/erase circuitry. Register contents also internally latch  
addresses and data necessary to execute the program and erase operations. The K8D3216U is implemented with Internal Program/  
Erase Algorithms to execute the program/erase operations. The Internal Program/Erase Algorithms are invoked by program/erase  
command sequences. The Internal Program Algorithm automatically programs and verifies data at specified addresses. The Internal  
Erase Algorithm automatically pre-programs the memory cell which is not programmed and then executes the erase operation. The  
K8D3216U has means to indicate the status of completion of program/erase operations. The status can be indicated via the RY/BY  
pin, Data polling of DQ7, or the Toggle bit (DQ6). Once the operations have been completed, the device automatically resets itself to  
the read mode. The device requires only 14 mA as active read current and 15 mA for program/erase operations.  
Table 7. Operations Table  
WP/  
ACC  
DQ15/  
A-1  
DQ8/  
DQ14  
DQ0/  
DQ7  
Operation  
CE  
OE  
WE  
BYTE  
A9  
A6  
A1  
A0  
RESET  
word  
byte  
L
L
L
L
H
H
H
L
A9  
A9  
A6  
A6  
A1  
A1  
A0  
A0  
DQ15  
A-1  
DOUT  
DOUT  
DOUT  
H
H
Read  
L/H  
(2)  
High-Z  
Vcc ±  
0.3V  
Stand-by  
X
X
X
X
X
X
X
High-Z  
High-Z  
High-Z  
(2)  
Output Disable  
Reset  
L
X
L
L
H
X
H
H
H
X
L
X
X
H
L
L/H  
L/H  
X
X
X
X
X
X
X
X
High-Z  
High-Z  
DIN  
High-Z  
High-Z  
DIN  
High-Z  
High-Z  
DIN  
H
L
word  
byte  
A9  
A9  
A6  
A6  
A1  
A1  
A0  
A0  
H
H
Write  
(4)  
L
A-1  
High-Z  
DIN  
Enable Block Group  
Protect (3)  
L
L
H
H
X
L
L
X
X
X
X
L/H  
(4)  
(4)  
X
X
X
L
H
X
H
H
X
L
L
X
X
X
X
X
X
X
DIN  
DIN  
X
VID  
VID  
VID  
Enable Block Group  
Unprotect (3)  
Temporary Block  
Group  
X
Auto Select  
Manufacturer ID (5)  
Code(See  
Table 9)  
L
L
L
L
H
H
X
X
L/H  
L/H  
VID  
VID  
L
L
L
L
L
X
X
X
X
H
H
Auto Select  
Device Code (5)  
Code(See  
Table 9)  
H
Notes :  
1. L = VIL (Low), H = VIH (High), VID = 8.5V~12.5V, DIN = Data in, DOUT = Data out, X = Don't care.  
2. WP/ACC and RESET pin are asserted at Vcc±0.3 V or Vss±0.3 V in the Stand-by mode.  
3. Addresses must be composed of the Block address (A12 - A20).  
The Block Protect and Unprotect operations may be implemented via programming equipment too.  
Refer to the "Block Group Protection and Unprotection".  
4. If WP/ACC=VIL, the two outermost boot blocks is protected. If WP/ACC=VIH, the two outermost boot block protection depends on whether those  
blocks were last protected or unprotected using the method described in "Block Group Protection and Unprotection". If WP/ACC=VHH, all blocks  
will be temporarily unprotected.  
5. Manufacturer and device codes may also be accessed via a command register write sequence. Refer to Table 9.  
9
Revision 1.7  
September, 2006  
K8D3x16UTC / K8D3x16UBC  
NOR FLASH MEMORY  
COMMAND DEFINITIONS  
The K8D3216U operates by selecting and executing its operational modes. Each operational mode has its own command set. In  
order to select a certain mode, a proper command with specific address and data sequences must be written into the command reg-  
ister. Writing incorrect information which include address and data or writing an improper command will reset the device to the read  
mode. The defined valid register command sequences are stated in Table 8. Note that Erase Suspend (B0H) and Erase Resume  
(30H) commands are valid only while the Block Erase Operation is in progress.  
Table 8. Command Sequences  
1st Cycle  
Word Byte  
2nd Cycle  
3rd Cycle  
4th Cycle  
5th Cycle  
6th Cycle  
Command Sequence  
Cycle  
Word  
Byte  
Word  
Byte  
Word  
Byte  
Word  
Byte  
Word  
Byte  
Addr  
RA  
RD  
Read  
Data  
1
1
Addr  
XXXH  
F0H  
Reset  
Data  
DA/  
555H  
DA/  
AAAH  
DA/  
X00H  
DA/  
X00H  
Autoselect  
Manufacturer  
ID (2,3)  
Addr  
Data  
Addr  
Data  
Addr  
Data  
Addr  
555H  
AAH  
AAAH  
AAH  
AAAH  
AAH  
AAAH  
AAAH  
2AAH  
55H  
2AAH  
55H  
2AAH  
55H  
2AAH  
555H  
555H  
555H  
4
4
4
90H  
ECH  
DA/  
555H  
DA/  
AAAH  
DA/  
X01H  
DA/  
X02H  
Autoselect  
Device Code  
(2,3)  
555H  
555H  
90H  
(See Table 9)  
Autoselect  
Block Group  
Protect Verify  
(2,3)  
DA/  
555H  
DA/  
AAAH  
BA /  
X02H  
BA/  
X04H  
(See Table 9)  
90H  
Auto Select  
DA/  
555H  
DA/  
AAAH  
DA /  
X03H  
DA/  
X06H  
555H  
555H  
Secode Block  
Factory Protect  
Verify (2,3)  
4
(See Table 9)  
Data  
Addr  
Data  
Addr  
Data  
Addr  
Data  
Addr  
Data  
Addr  
Data  
Addr  
Data  
Addr  
Data  
Addr  
Data  
Addr  
Data  
Addr  
Data  
Addr  
Data  
AAH  
AAAH  
AAH  
AAAH  
AAH  
AAAH  
AAH  
AAAH  
AAH  
55H  
2AAH  
55H  
2AAH  
55H  
2AAH  
55H  
2AAH  
55H  
90H  
AAAH  
88H  
AAAH  
90H  
AAAH  
A0H  
AAAH  
20H  
555H  
555H  
555H  
555H  
555H  
555H  
555H  
555H  
555H  
555H  
555H  
555H  
Enter Secode  
Block Region  
3
4
4
3
2
XXXH  
00H  
PA  
Exit Secode  
Block Region  
Program  
PD  
Unlock Bypass  
XXXH  
PA  
Unlock Bypass  
Program  
A0H  
PD  
XXXH  
XXXH  
00H  
Unlock Bypass  
Reset  
2
6
6
1
90H  
555H  
AAH  
555H AAAH  
AAH  
AAAH  
2AAH  
55H  
2AAH 555H  
55H  
555H  
555H  
555H  
AAAH  
80H  
AAAH  
80H  
555H  
AAAH  
AAH  
AAAH  
AAH  
2AAH  
55H  
2AAH  
55H  
555H  
555H  
555H  
AAAH  
Chip Erase  
Block Erase  
10H  
555H  
BA  
30H  
XXXH  
Block Erase  
Suspend (4, 5)  
B0H  
XXXH  
Block Erase  
Resume  
1
1
30H  
55H  
AAH  
CFI Query (6)  
98H  
10  
Revision 1.7  
September, 2006  
K8D3x16UTC / K8D3x16UBC  
NOR FLASH MEMORY  
Notes : 1. RA : Read Address, PA : Program Address, RD : Read Data, PD : Program Data  
DA : Dual Bank Address (A19 - A20), BA : Block Address (A12 - A20), X = Don’t care .  
2. To terminate the Autoselect Mode, it is necessary to write Reset command to the register.  
3. The 4th cycle data of Autoselect mode is output data.  
The 3rd and 4th cycle bank addresses of Autoselect mode must be same.  
4. The Read / Program operations at non-erasing blocks and the autoselect mode are allowed in the Erase Suspend mode.  
5. The Erase Suspend command is applicable only to the Block Erase operation.  
6. Command is valid when the device is in read mode or Autoselect mode.  
7. DQ8 - DQ15 are don’t care in command sequence, but RD and PD is excluded.  
8. A11 - A20 are also don’t care, except for the case of special notice.  
Table 9. K8D3216U Autoselect Codes, (High Voltage Method)  
DQ8 to DQ15  
A20 A11  
to to  
A12 A10  
A8  
to  
A7  
A5  
to  
A2  
DQ7  
to  
DQ0  
Description  
CE  
OE  
WE  
A9  
A6  
A1 A0  
BYTE  
=VIH  
BYTE  
=VIL  
Manufacturer ID  
L
L
L
L
H
H
DA  
DA  
X
X
VID  
VID  
X
X
L
L
X
X
L
L
L
X
X
X
ECH  
A0H  
Device Code K8D3216UT  
(Top Boot Block)  
H
22H  
Device Code K8D3216UB  
(Bottom Boot Block)  
L
L
L
L
L
L
H
H
H
DA  
BA  
DA  
X
X
X
VID  
VID  
VID  
X
X
X
L
L
L
X
X
X
L
H
H
H
L
22H  
X
X
X
X
A2H  
Block Protection  
Verification  
01H (Protected),  
00H (Unprotected)  
80H (Factory locked),  
00H (Not factory locked)  
Secode Block (2)  
Indicator Bit (DQ7)  
H
X
Notes : 1. L=Logic Low=VIL, H=Logic High=VIH, DA=Dual Bank Address, BA=Block Address, X=Don’t care.  
2. Secode Block : Security Code Block.  
11  
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NOR FLASH MEMORY  
DEVICE OPERATION  
Byte/Word Mode  
If the BYTE pin is set at logical "1" , the device is in word mode, DQ0-DQ15 are active. Otherwise the BYTE pin is set at logical "0" ,  
the device is in byte mode, DQ0-DQ7 are active. DQ8-DQ14 are in the High-Z state and DQ15 pin is used as an input for the LSB  
(A-1) address pin.  
Read Mode  
The K8D3216U is controlled by Chip Enable (CE), Output Enable (OE) and Write Enable (WE). When CE and OE are low and WE  
is high, the data stored at the specified address location,will be the output of the device. The outputs are in high impedance state  
whenever CE or OE is high.  
Standby Mode  
The K8D3216U features Stand-by Mode to reduce power consumption. This mode puts the device on hold when the device is dese-  
lected by making CE high (CE = VIH). Refer to the DC characteristics for more details on stand-by modes.  
Output Disable  
The device outputs are disabled when OE is High (OE = VIH). The output pins are in high impedance state.  
Automatic Sleep Mode  
K8D3216U features Automatic Sleep Mode to minimize the device power consumption. Since the device typically draws 5µA of the  
current in Automatic Sleep Mode, this feature plays an extremely important role in battery-powered applications. When addresses  
remain steady for tAA+50ns, the device automatically activates the Automatic Sleep Mode. In the sleep mode, output data is latched  
and always available to the system. When addresses are changed, the device provides new data without wait time.  
tAA + 50ns  
Address  
Outputs  
Data  
Data  
Data  
Data  
Data  
Data  
Auto Sleep Mode  
Figure 1. Auto Sleep Mode Operation  
Autoselect Mode  
The K8D3216U offers the Autoselect Mode to identify manufacturer and device type by reading a binary code. The Autoselect Mode  
allows programming equipment to automatically match the device to be programmed with its corresponding programming algorithm.  
In addition, this mode allows the verification of the status of write protected blocks. This mode is used by two method. The one is high  
voltage method to be required VID (8.5V~12.5V) on address pin A9. When A9 is held at VID and the bank address or block address is  
asserted, the device outputs the valid data via DQ pins(see Table 9 and Figure 2). The rest of addresses except A0, A1 and A6 are  
Dont Care. The other is autoselect command method that the autoselect code is accessible by the commamd sequence without VID.  
The manufacturer and device code may also be read via the command register. The Command Sequence is shown in Table 8 and  
Figure 3. The autoselect operation of block protect verification is initiated by first writing two unlock cycle. The third cycle must con-  
tain the bank address and autoselect command (90H). If Block address while (A6, A1, A0) = (0,1,0) is finally asserted on the address  
pin, it will produce a logical "1" at the device output DQ0 to indicate a write protected block or a logical "0" at the device output DQ0  
to indicate a write unprotected block. To terminate the autoselect operation, write Reset command (F0H) into the command register.  
12  
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NOR FLASH MEMORY  
VID  
V = VIH or VIL  
A9  
01H  
00H  
A6,A1,A0*  
DQ15-DQ0  
22A0H  
ECH  
or  
22A2H  
Manufacturer  
Code  
Device Code  
(K8D3216U)  
Return to  
Read Mode  
Note : The addresses other than A0 , A1 and A6 are Dont care. Please refer to Table 9 for device code.  
Figure 2. Autoselect Operation ( by high voltage method )  
WE  
A20A0(x16)/*  
A20A-1(x8)  
2AAH/  
555H  
00H/  
00H  
01H/  
02H  
555H/  
AAAH  
555H/  
AAAH  
22A0H  
or  
ECH  
DQ15DQ0  
55H  
90H  
AAH  
F0H  
22A2H  
Manufacturer  
Code  
Device Code  
(K8D3216U)  
Return to  
Read Mode  
Note : The 3rd Cycle and 4th Cycle address must include the same bank address. Please refer to Table 9 for device code.  
Figure 3. Autoselect Operation ( by command sequence method )  
Write (Program/Erase) Mode  
The K8D3216U executes its program/erase operations by writing commands into the command register. In order to write the com-  
mands to the register, CE and WE must be low and OE must be high. Addresses are latched on the falling edge of CE or WE (which-  
ever occurs last) and the data are latched on the rising edge of CE or WE (whichever occurs first). The device uses standard  
microprocessor write timing.  
Program  
The K8D3216U can be programmed in units of a word or a byte. Programming is writing 0's into the memory array by executing the  
Internal Program Routine. In order to perform the Internal Program Routine, a four-cycle command sequence is necessary. The first  
two cycles are unlock cycles. The third cycle is assigned for the program setup command. In the last cycle, the address of the mem-  
ory location and the data to be programmed at that location are written. The device automatically generates adequate program  
pulses and verifies the programmed cell margin by the Internal Program Routine. During the execution of the Routine, the system is  
not required to provide further controls or timings.  
During the Internal Program Routine, commands written to the device will be ignored. Note that a hardware reset during a program  
operation will cause data corruption at the corresponding location.  
WE  
A20A0(x16)/  
555H/  
AAAH  
2AAH/  
555H  
555H/  
AAAH  
Program  
Address  
A20A-1(x8)  
DQ15-DQ0  
RY/BY  
Program  
Data  
A0H  
55H  
AAH  
Program  
Start  
Figure 4. Program Command Sequence  
13  
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Unlock Bypass  
The K8D3216U provides the unlock bypass mode to save its program time for program operation. The mode is invoked by the unlock  
bypass command sequence. Then, the unlock bypass program command sequence is required to program the device.  
Unlike the standard program command sequence that contains four bus cycles, the unlock bypass program command sequence  
comprises only two bus cycles.  
The unlock bypass mode is engaged by issuing the unlock bypass command sequence which is comprised of three bus cycles. Writ-  
ing first two unlock cycles is followed by a third cycle containing the unlock bypass command (20H). Once the device is in the unlock  
bypass mode, the unlock bypass program command sequence is necessary to program in this mode. The unlock bypass program  
command sequence is comprised of only two bus cycles; writing the unlock bypass program command (A0H) is followed by the pro-  
gram address and data. This command sequence is the only valid one for programming the device in the unlock bypass mode.  
The unlock bypass reset command sequence is the only valid command sequence to exit the unlock bypass mode. The unlock  
bypass reset command sequence consists of two bus cycles. The first cycle must contain the data (90H). The second cycle contains  
only the data (00H). Then, the device returns to the read mode.  
Chip Erase  
To erase a chip is to write 1s into the entire memory array by executing the Internal Erase Routine. The Chip Erase requires six bus  
cycles to write the command sequence. The erase set-up command is written after first two "unlock" cycles. Then, there are two  
more write cycles prior to writing the chip erase command. The Internal Erase Routine automatically pre-programs and verifies the  
entire memory for an all zero data pattern prior to erasing. The automatic erase begins on the rising edge of the last WE or CE pulse  
in the command sequence and terminates when DQ7 is "1". After that the device returns to the read mode.  
WE  
A20A0(x16)/  
A20A-1(x8)  
555H/  
AAAH  
2AAH/  
555H  
555H/  
AAAH  
555H  
AAAH  
2AAH/  
555H  
555H/  
AAAH  
80H  
55H  
AAH  
AAH  
10H  
55H  
DQ15-DQ0  
Chip Erase  
Start  
RY/BY  
Figure 5. Chip Erase Command Sequence  
Block Erase  
To erase a block is to write 1s into the desired memory block by executing the Internal Erase Routine. The Block Erase requires six  
bus cycles to write the command sequence shown in Table 8. After the first two "unlock" cycles, the erase setup command (80H) is  
written at the third cycle. Then there are two more "unlock" cycles followed by the Block Erase command. The Internal Erase Routine  
automatically pre-programs and verifies the entire memory prior to erasing it. The block address is latched on the falling edge of WE  
or CE, while the Block Erase command is latched on the rising edge of WE or CE.  
Multiple blocks can be erased sequentially by writing the six bus-cycle operation in Figure 6. Upon completion of the last cycle for the  
Block Erase, additional block address and the Block Erase command (30H) can be written to perform the Multi-Block Erase. An 50µs  
(typical) "time window" is required between the Block Erase command writes. The Block Erase command must be written within the  
50µs "time window", otherwise the Block Erase command will be ignored. The 50µs "time window" is reset when the falling edge of  
the WE occurs within the 50µs of "time window" to latch the Block Erase command. During the 50µs of "time window", any command  
other than the Block Erase or the Erase Suspend command written to the device will reset the device to read mode. After the 50µs of  
"time window", the Block Erase command will initiate the Internal Erase Routine to erase the selected blocks. Any Block Erase  
address and command following the exceeded "time window" may or may not be accepted. No other commands will be recognized  
except the Erase Suspend command during Block Erase operation.  
14  
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NOR FLASH MEMORY  
WE  
A20A0(x16)/  
A20A-1(x8)  
555H/  
AAAH  
2AAH/  
555H  
555H/  
AAAH  
555H/  
AAAH  
2AAH/  
555H  
Block  
Address  
80H  
DQ15-DQ0  
55H  
AAH  
AAH  
30H  
55H  
Block Erase  
Start  
RY/BY  
Figure 6. Block Erase Command Sequence  
Erase Suspend / Resume  
The Erase Suspend command interrupts the Block Erase to read or program data in a block that is not being erased. The Erase Sus-  
pend command is only valid during the Block Erase operation including the time window of 50µs. The Erase Suspend command is  
not valid while the Chip Erase or the Internal Program Routine sequence is running.  
When the Erase Suspend command is written during a Block Erase operation, the device requires a maximum of 20µs to suspend  
the erase operation. But, when the Erase Suspend command is written during the block erase time window (50µs) , the device imme-  
diately terminates the block erase time window and suspends the erase operation.  
After the erase operation has been suspended, the device is availble for reading or programming data in a block that is not being  
erased. The system may also write the autoselect command sequence when the device is in the Erase Suspend mode.  
When the Erase Resume command is executed, the Block Erase operation will resume. When the Erase Suspend or Erase Resume  
command is executed, the addresses are in Don't Care state.  
WE  
A20A0(x16)/  
A20A-1(x8)  
555H/  
AAAH  
Block  
Address  
XXXH  
XXXH  
30H  
AAH  
B0H  
30H  
DQ15-DQ0  
Block Erase  
Command Sequence  
Erase  
Resume  
Block Erase  
Start  
Erase  
Suspend  
Figure 7. Erase Suspend/Resume Command Sequence  
15  
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NOR FLASH MEMORY  
Read While Write  
The K8D3216U provides dual bank memory architecture that divides the memory array into two banks. The device is capable of  
reading data from one bank and writing data to the other bank simultaneously. This is so called the Read While Write operation with  
dual bank architecture; this feature provides the capability of executing the read operation during Program/Erase or Erase-Suspend-  
Program operation.  
The Read While Write operation is prohibited during the chip erase operation. It is also allowed during erase operation when either  
single block or multiple blocks from same bank are loaded to be erased. It means that the Read While Write operation is prohibited  
when blocks from Bank1 and another blocks from Bank2 are loaded all together for the multi-block erase operation.  
Block Group Protection & Unprotection  
The K8D3216U feature hardware block group protection. This feature will disable both program and erase operations in any combi-  
nation of twenty five block groups of memory. Please refer to Tables 10 and 11. The block group protection feature is enabled using  
programming equipment at the user’s site. The device is shipped with all block groups unprotected.  
This feature can be hardware protected or unprotected. If a block is protected, program or erase command in the protected block will  
be ignored by the device. The protected block can only be read. This is useful method to preserve an important program data. The  
block group unprotection allows the protected blocks to be erased or programed. All blocks must be protected before unprotect oper-  
ation is executing. The block group protection and unprotection can be implemented by two methods.  
The first method needs the following conditions.  
DQ15/  
A-1  
DQ8/  
DQ14  
DQ0/  
DQ7  
Operation  
CE  
OE  
WE  
BYTE  
A9  
A6  
A1  
A0  
RESET  
Block Group Protect  
L
L
H
H
L
L
X
X
X
X
L
H
H
L
L
X
X
X
X
DIN  
DIN  
VID  
VID  
Block Group Unprotect  
H
Address must be inputted to the block group address (A12~A20) during block group protection operation. Please refer to Figure 9  
(Algorithm) and Switching Waveforms of Block Group Protect & Unprotect Operations.  
The second method needs the following conditions in order to keep backward compatibility. Please refer to Figure 8.  
DQ15/  
A-1  
DQ8/  
DQ14  
DQ0/  
DQ7  
Operation  
CE  
OE  
WE  
BYTE  
A9  
A6  
A1  
A0  
RESET  
Block Group Protect  
L
L
VID  
VID  
X
X
VID  
VID  
L
H
H
L
L
X
X
X
X
X
X
H
H
Block Group Unprotect  
H
The K8D3216U needs the recovery time (20µs) from the rising edge of WE in order to execute its program, erase and read opera-  
tions.  
Block Group Protect:150µs  
Block Group Unprotect:500ms  
500ns  
500ns  
VID  
A9  
VID  
Don't Care  
Don't Care  
OE  
Low  
WE  
Address  
Block Group Address*  
Notes : * Block Group Address is Don't Care during Block Group Unprotection.  
Figure 8. Block Group Protect Sequence (The second method)  
16  
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K8D3x16UTC / K8D3x16UBC  
NOR FLASH MEMORY  
START  
COUNT = 1  
RESET=VID  
Wait 1µs  
No  
First Write  
Cycle=60h?  
Temporary Block Group  
Unprotect Mode  
Yes  
Yes  
Block Group  
Protection ?  
No  
Block Unprotect  
Algorithm  
Block Protect  
Algorithm  
No  
Yes  
All Block Groups  
Protected ?  
Set up Block Group  
Block Group <i>, i= 0  
address  
Block Group Unprotect  
Write 60H  
with  
Block Group Protect:  
Write 60H to Block  
Group address with  
A6=0,A1=1  
A6=1,A1=1  
A0=0  
A0=0  
Wait 15ms  
Wait 150µs  
Reset  
COUNT=1  
Verify Block Group  
Unprotect:Write 40H to  
Block Group address  
with A6=1,  
Verify Block Group  
Protect:Write 40H to  
Block Group address  
with A6=0,  
Increment  
COUNT  
A1=1,A0=0  
Increment  
COUNT  
A1=1,A0=0  
Read from  
Block Group address  
with A6=1,  
Read from  
Block Group address  
with A6=0,  
A1=1,A0=0  
Set up next Block  
Group address  
A1=1,A0=0  
No  
No  
No  
COUNT  
=1000?  
Data=00h?  
Yes  
No  
COUNT  
=25?  
Data=01h?  
Yes  
Yes  
Yes  
No  
Last Block Group  
verified ?  
Device failed  
Protect another  
Block Group?  
Device failed  
Yes  
Yes  
Remove VID  
from RESET  
No  
Remove VID  
from RESET  
Write RESET  
command  
Write RESET  
command  
END  
END  
Note : All blocks must be protected before unprotect operation is executing.  
Figure 9. Block Group Protection & Unprotection Algorithms  
17  
Revision 1.7  
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K8D3x16UTC / K8D3x16UBC  
NOR FLASH MEMORY  
Table 10. Flash Memory Block Group Address (Top Boot Block)  
Block Address  
Block Group  
Block  
A20  
A19  
A18  
A17  
A16  
A15  
0
A14  
A13  
A12  
BGA0  
BGA1  
0
0
0
0
0
X
X
X
BA0  
0
1
0
0
0
0
1
0
X
X
X
BA1 to BA3  
1
1
BGA2  
BGA3  
BGA4  
BGA5  
BGA6  
BGA7  
BGA8  
BGA9  
BGA10  
BGA11  
BGA12  
BGA13  
BGA14  
BGA15  
0
0
0
0
0
0
0
1
1
1
1
1
1
1
0
0
0
1
1
1
1
0
0
0
0
1
1
1
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0
1
0
1
0
X
X
X
X
X
X
X
X
X
X
X
X
X
X
0
X
X
X
X
X
X
X
X
X
X
X
X
X
X
0
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
BA4 to BA7  
BA8 to BA11  
BA12 to BA15  
BA16 to BA19  
BA20 to BA23  
BA24 to BA27  
BA28 to BA31  
BA32 to BA35  
BA36 to BA39  
BA40 to BA43  
BA44 to BA47  
BA48 to BA51  
BA52 to BA55  
BA56 to BA59  
BGA16  
1
1
1
1
0
1
X
X
X
BA60 to BA62  
1
0
BGA17  
BGA18  
BGA19  
BGA20  
BGA21  
BGA22  
BGA23  
BGA24  
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
BA63  
BA64  
BA65  
BA66  
BA67  
BA68  
BA69  
BA70  
1
1
1
1
1
1
1
1
1
1
1
1
1
1
18  
Revision 1.7  
September, 2006  
K8D3x16UTC / K8D3x16UBC  
NOR FLASH MEMORY  
Table 11. Flash Memory Block Group Address (Bottom Boot Block)  
Block Address  
Block Group  
Block  
A20  
A19  
A18  
A17  
A16  
A15  
0
A14  
0
A13  
0
A12  
0
BGA0  
BGA1  
BGA2  
BGA3  
BGA4  
BGA5  
BGA6  
BGA7  
0
0
0
0
0
BA0  
BA1  
BA2  
BA3  
BA4  
BA5  
BA6  
BA7  
0
0
0
0
0
0
0
0
1
0
0
0
0
0
0
0
1
0
0
0
0
0
0
0
0
1
1
0
0
0
0
0
0
1
0
0
0
0
0
0
0
0
1
0
1
0
0
0
0
0
0
1
1
0
0
0
0
0
0
0
1
1
1
0
1
BGA8  
0
0
0
0
1
0
X
X
X
BA8 to BA10  
1
1
BGA9  
0
0
0
0
0
0
0
1
1
1
1
1
1
1
0
0
0
1
1
1
1
0
0
0
0
1
1
1
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0
1
0
1
0
X
X
X
X
X
X
X
X
X
X
X
X
X
X
0
X
X
X
X
X
X
X
X
X
X
X
X
X
X
0
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
BA11 to BA14  
BA15 to BA18  
BA19 to BA22  
BA23 to BA26  
BA27 to BA30  
BA31 to BA34  
BA35 to BA38  
BA39 to BA42  
BA43 to BA46  
BA47 to BA50  
BA51 to BA54  
BA55 to BA58  
BA59 to BA62  
BA63 to BA66  
BGA10  
BGA11  
BGA12  
BGA13  
BGA14  
BGA15  
BGA16  
BGA17  
BGA18  
BGA19  
BGA20  
BGA21  
BGA22  
BGA23  
BGA24  
1
1
1
1
1
1
1
1
0
1
X
X
X
X
X
X
BA67 to BA69  
BA70  
1
0
1
1
19  
Revision 1.7  
September, 2006  
K8D3x16UTC / K8D3x16UBC  
NOR FLASH MEMORY  
Temporary Block Group Unprotect  
The protected blocks of the K8D3216U can be temporarily unprotected by applying high voltage (VID = 8.5V~12.5V) to the RESET  
pin. In this mode, previously protected blocks can be programmed or erased with the program or erase command routines. When the  
RESET pin goes high (RESET = VIH), all the previously protected blocks will be protected again. If the WP/ACC pin is asserted at VIL  
, the two outermost boot blocks remain protected.  
VID  
V = VIH or VIL  
RESET  
CE  
Program & Erase Operation  
at Protected Block  
WE  
Figure 10. Temporary Block Group Unprotect Sequence  
Write Protect (WP)  
The WP/ACC pin has two useful functions. The one is that certain boot block is protected by the hardware method not to use VID.  
The other is that program operation is accelerated to reduce the program time (Refer to Accelerated program Operation Paragraph).  
When the WP/ACC pin is asserted at VIL, the device can not perform program and erase operation in the two "outermost" 8K byte  
boot blocks independently of whether those blocks were protected or unprotected using the method described in "Block Group pro-  
tection/Unprotection".  
The write protected blocks can only be read. This is useful method to preserve an important program data.  
The two outermost 8K byte boot blocks are the two blocks containing the lowest addresses in a bottom-boot-configured device, or  
the two blocks containing the highest addresses in a top-boot-congfigured device.  
(K8D3216UT : BA69 and BA70, K8D3216UB : BA0 and BA1)  
When the WP/ACC pin is asserted at VIH, the device reverts to whether the two outermost 8K byte boot blocks were last set to be  
protected or unprotected. That is, block protection or unprotection for these two blocks depends on whether they were last protected  
or unprotected using the method described in "Block Group protection/unprotection".  
Recommend that the WP/ACC pin must not be in the state of floating or unconnected, or the device may be led to malfunction.  
Secode(Security Code) Block Region  
The Secode Block feature provides a Flash memory region to be stored unique and permanent identification code, that is, Electronic  
Serial Number (ESN), customer code and so on. This is primarily intended for customers who wish to use an Electronic Serial Num-  
ber (ESN) in the device with the ESN protected against modification. Once the Secode Block region is protected, any further modifi-  
cation of that region is impossible. This ensures the security of the ESN once the product is shipped to the field.  
The Secode Block is factory locked or customer lockable. Before the device is shipped, the factory locked Secode Block is written on  
the special code and it is protected. The Secode Indicator bit (DQ7) is permanently fixed at "1" and it is not changed. The customer  
lockable Secode Block is unprotected, therefore it is programmed and erased. The Secode Indicator bit (DQ7) of it is permanently  
fixed at "0" and it is not changed. But once it is protected, there is no procedure to unprotect and modify the Secode Block.  
The Secode Block region is 64K bytes in length and is accessed through a new command sequence (see Table 8). After the system  
has written the Enter Secode Block command sequence, the system may read the Secode Block region by using the same  
addresses of the boot blocks (8KBx8). The K8D3216UT occupies the address of the byte mode 3F0000H to 3FFFFFH (word mode  
1F8000H to 1FFFFFH) and the K8D3216UB type occupies the address of the byte mode 000000H to 00FFFFH (word mode  
000000H to 007FFFH). This mode of operation continues until the system issues the Exit Secode Block command sequence, or until  
power is removed from the device. On power-up, or following a hardware reset, the device reverts to read mode.  
20  
Revision 1.7  
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K8D3x16UTC / K8D3x16UBC  
NOR FLASH MEMORY  
Accelerated Program Operation  
Accelerated program operation reduces the program time. This is one of two functions provided by the WP/ACC pin. When the WP/  
ACC pin is asserted as VHH, the device automatically enters the aforementioned Unlock Bypass mode, temporarily unprotecting any  
protected blocks, and reduces the program operation time. The system would use a two-cycle program command sequence as  
required by the Unlock Bypass mode. Removing VHH from the WP/ACC pin returns the device to normal operation. Recommend  
that the WP/ACC pin must not be asserted at VHH except accelerated program operation, or the device may be damaged. In  
addition, the WP/ACC pin must not be in the state of floating or unconnected, otherwise the device may be led to malfunc-  
tion.  
Software Reset  
The reset command provides that the bank is reseted to read mode or erase-suspend-read mode. The addresses are in Don't Care  
state. The reset command is vaild between the sequence cycles in an erase command sequence before erasing begins, or in a pro-  
gram command sequence before programming begins. This resets the bank in which was operating to read mode. if the device is be  
erasing or programming, the reset command is invalid until the operation is completed. Also, the reset command is valid between the  
sequence cycles in an autoselect command sequence. In the autoselect mode, the reset command returns the bank to read mode.  
If a bank entered the autoselect mode in the Erase Suspend mode, the reset command returns the bank to erase-suspend-read  
mode. If DQ5 is high on erase or program operation, the reset command return the bank to read mode or erase-suspend-read mode  
if the bank was in the Erase Suspend state.  
Hardware Reset  
The K8D3216U offers a reset feature by driving the RESET pin to VIL. The RESET pin must be kept low (VIL) for at least 500ns.  
When the RESET pin is driven low, any operation in progress will be terminated and the internal state machine will be reset to the  
standby mode after 20µs. If a hardware reset occurs during a program operation, the data at that particular location will be lost.  
Once the RESET pin is taken high, the device requires 200ns of wake-up time until outputs are valid for read access. Also, note that  
all the data output pins are tri-stated for the duration of the RESET pulse.  
The RESET pin may be tied to the system reset pin. If a system reset occurs during the Internal Program and Erase Routine, the  
device will be automatically reset to the read mode ; this will enable the systems microprocessor to read the boot-up firmware from  
the Flash memory.  
Power-up Protection  
To avoid initiation of a write cycle during Vcc Power-up, RESET low must be asserted during power-up. After RESET goes high, the  
device is reset to the read mode.  
Low Vcc Write Inhibit  
To avoid initiation of a write cycle during Vcc power-up and power-down, a write cycle is locked out for Vcc less than 1.8V. If Vcc <  
VLKO (Lock-Out Voltage), the command register and all internal program/erase circuits are disabled. Under this condition the device  
will reset itself to the read mode. Subsequent writes will be ignored until the Vcc level is greater than VLKO. It is the users responsi-  
bility to ensure that the control pins are logically correct to prevent unintentional writes when Vcc is above 1.8V.  
Write Pulse Glitch Protection  
Noise pulses of less than 5ns(typical) on CE, OE, or WE will not initiate a write cycle.  
Logical Inhibit  
Writing is inhibited under any one of the following conditions : OE = VIL, CE = VIH or WE = VIH. To initiate a write, CE and WE must  
be "0", while OE is "1".  
Commom Flash Memory Interface  
Common Flash Momory Interface is contrived to increase the compatibility of host system software. It provides the specific informa-  
tion of the device, such as memory size, byte/word configuration, and electrical features. Once this information has been obtained,  
the system software will know which command sets to use to enable flash writes, block erases, and control the flash component.  
When the system writes the CFI command(98H) to address 55H in word mode(or address AAH in byte mode), the device enters the  
CFI mode. And then if the system writes the address shown in Table 12, the system can read the CFI data. Query data are always  
presented on the lowest-order data outputs(DQ0-7) only. In word(x16) mode, the upper data outputs(DQ8-15) is 00h. To terminate  
this operation, the system must write the reset command.  
21  
Revision 1.7  
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K8D3x16UTC / K8D3x16UBC  
NOR FLASH MEMORY  
Table 12. Common Flash Memory Interface Code  
Description  
Addresses  
(Word Mode)  
Addresses  
(Byte Mode)  
Data  
10H  
11H  
12H  
20H  
22H  
24H  
0051H  
0052H  
0059H  
Query Unique ASCII string "QRY"  
13H  
14H  
26H  
28H  
0002H  
0000H  
Primary OEM Command Set  
15H  
16H  
2AH  
2CH  
0040H  
0000H  
Address for Primary Extended Table  
17H  
18H  
2EH  
30H  
0000H  
0000H  
Alternate OEM Command Set (00h = none exists)  
Address for Alternate OEM Extended Table (00h = none exists)  
19H  
1AH  
32H  
34H  
0000H  
0000H  
Vcc Min. (write/erase)  
D7-D4: volt, D3-D0: 100 millivolt  
1BH  
1CH  
36H  
38H  
0027H  
0036H  
Vcc Max. (write/erase)  
D7-D4: volt, D3-D0: 100 millivolt  
Vpp Min. voltage(00H = no Vpp pin present)  
1DH  
1EH  
1FH  
20H  
21H  
22H  
23H  
24H  
25H  
26H  
27H  
3AH  
3CH  
3EH  
40H  
42H  
44H  
46H  
48H  
4AH  
4CH  
4EH  
0000H  
0000H  
0004H  
0000H  
000AH  
0000H  
0005H  
0000H  
0004H  
0000H  
0016H  
Vpp Max. voltage(00H = no Vpp pin present)  
Typical timeout per single byte/word write 2N us  
Typical timeout for Min. size buffer write 2N us(00H = not supported)  
Typical timeout per individual block erase 2N ms  
Typical timeout for full chip erase 2N ms(00H = not supported)  
Max. timeout for byte/word write 2N times typical  
Max. timeout for buffer write 2N times typical  
Max. timeout per individual block erase 2N times typical  
Max. timeout for full chip erase 2N times typical(00H = not supported)  
Device Size = 2N byte  
28H  
29H  
50H  
52H  
0002H  
0000H  
Flash Device Interface description  
2AH  
2BH  
54H  
56H  
0000H  
0000H  
Max. number of byte in multi-byte write = 2N  
Number of Erase Block Regions within device  
2CH  
58H  
0002H  
2DH  
2EH  
2FH  
30H  
5AH  
5CH  
5EH  
60H  
0007H  
0000H  
0020H  
0000H  
Erase Block Region 1 Information  
Erase Block Region 2 Information  
Erase Block Region 3 Information  
Erase Block Region 4 Information  
31H  
32H  
33H  
34H  
62H  
64H  
66H  
68H  
003EH  
0000H  
0000H  
0001H  
35H  
36H  
37H  
38H  
6AH  
6CH  
6EH  
70H  
0000H  
0000H  
0000H  
0000H  
39H  
3AH  
3BH  
3CH  
72H  
74H  
76H  
78H  
0000H  
0000H  
0000H  
0000H  
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Revision 1.7  
September, 2006  
K8D3x16UTC / K8D3x16UBC  
NOR FLASH MEMORY  
Table 12. Common Flash Memory Interface Code  
Description  
Addresses  
(Word Mode)  
Addresses  
(Byte Mode)  
Data  
40H  
41H  
42H  
80H  
82H  
84H  
0050H  
0052H  
0049H  
Query-unique ASCII string "PRI"  
Major version number, ASCII  
Minor version number, ASCII  
43H  
44H  
86H  
88H  
0033H  
0033H  
Address Sensitive Unlock(Bits 1-0)  
0 = Required, 1= Not Required  
Silcon Revision Number(Bits 7-2)  
45H  
8AH  
0000H  
Erase Suspend  
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write  
46H  
47H  
8CH  
8EH  
0002H  
0001H  
Block Protect  
0 = Not Supported, 1 = Number of blocks in per group  
Block Temporary Unprotect 00 = Not Supported, 01 = Supported  
Block Protect/Unprotect scheme 04=K8D1x16U mode  
48H  
49H  
90H  
92H  
0001H  
0004H  
Simultaneous Operation (1)  
00 = Not Supported, XX = Number of Blocks in Bank2  
4AH  
4BH  
4CH  
94H  
96H  
98H  
00XXH  
0000H  
0000H  
Burst Mode Type 00 = Not Supported, 01 = Supported  
Page Mode Type  
00 = Not Supported, 01 = 4 Word Page 02 = 8 Word Page  
ACC(Acceleration) Supply Minimum  
00 = Not Supported, D7 - D4 : Volt, D3 - D0 : 100mV  
4DH  
4EH  
4FH  
9AH  
9CH  
9EH  
0085H  
00C5H  
000XH  
ACC(Acceleration) Supply Maximum  
00 = Not Supported, D7 - D4 : Volt, D3 - D0 : 100mV  
Top/Bottom Boot Block Flag  
02H = Bottom Boot Device, 03H = Top Boot Device  
Note :  
1. The number of blocks in Bank2 is device dependent.  
K8D3216U(8Mb/24Mb) = 30h (48blocks)  
23  
Revision 1.7  
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K8D3x16UTC / K8D3x16UBC  
NOR FLASH MEMORY  
DEVICE STATUS FLAGS  
The K8D3216U has means to indicate its status of operation in the bank where a program or erase operation is in processes.  
Address must include bank address being excuted internal routine operation. The status is indicated by raising the device status flag  
via corresponding DQ pins or the RY/ BY pin. The corresponding DQ pins are DQ7, DQ6, DQ5, DQ3 and DQ2. The statuses are as  
follows :  
Table 13. Hardware Sequence Flags  
Status  
DQ7  
DQ7  
0
DQ6  
Toggle  
Toggle  
DQ5  
DQ3  
DQ2  
1
RY/BY  
Programming  
0
0
0
1
0
0
Block Erase or Chip Erase  
Erase Suspend Read  
Toggle  
Erase Suspended  
Block  
Toggle  
(Note 1)  
1
1
0
Data  
0
0
Data  
0
1
1
0
In Progress  
Non-Erase Sus-  
pended Block  
Erase Suspend Read  
Data  
DQ7  
Data  
Toggle  
Data  
1
Erase Suspend  
Program  
Non-Erase Sus-  
pended Block  
No  
Toggle  
Programming  
DQ7  
0
Toggle  
Toggle  
Toggle  
1
1
1
0
1
0
0
0
0
Exceeded  
Time Limits  
Block Erase or Chip Erase  
Erase Suspend Program  
(Note 2)  
No  
Toggle  
DQ7  
Notes :  
1. DQ2 will toggle when the device performs successive read operations from the erase suspended block.  
2. If DQ5 is High (exceeded timing limits), successive reads from a problem block will cause DQ2 to toggle.  
DQ7 : Data Polling  
When an attempt to read the device is made while executing the Internal Program, the complement of the data is written to DQ7 as  
an indication of the Routine in progress. When the Routine is completed an attempt to access to the device will produce the true data  
written to DQ7. When a user attempts to read the device during the Erase operation, DQ7 will be low. If the device is placed in the  
Erase Suspend Mode, the status can be detected via the DQ7 pin. If the system tries to read an address which belongs to a block  
that is being erased, DQ7 will be high. If a non-erased block address is read, the device will produce the true data to DQ7. If an  
attempt is made to program a protected block, DQ7 outputs complements the data for approximately 1µs and the device then returns  
to the Read Mode without changing data in the block. If an attempt is made to erase a protected block, DQ7 outputs complement  
data in approximately 100us and the device then returns to the Read Mode without erasing the data in the block.  
DQ6 : Toggle Bit  
Toggle bit is another option to detect whether an Internal Routine is in progress or completed. Once the device is at a busy state,  
DQ6 will toggle. Toggling DQ6 will stop after the device completes its Internal Routine. If the device is in the Erase Suspend Mode,  
an attempt to read an address that belongs to a block that is being erased will produce a high output of DQ6. If an address belongs  
to a block that is not being erased, toggling is halted and valid data is produced at DQ6.  
If an attempt is made to program a protected block, DQ6 toggles for approximately 1us and the device then returns to the Read  
Mode without changing the data in the block. If an attempt is made to erase a protected block, DQ6 toggles for approximately 100µs  
and the device then returns to the Read Mode without erasing the data in the block.  
DQ5 : Exceed Timing Limits  
If the Internal Program/Erase Routine extends beyond the timing limits, DQ5 will go High, indicating program/erase failure.  
24  
Revision 1.7  
September, 2006  
K8D3x16UTC / K8D3x16UBC  
NOR FLASH MEMORY  
DQ3 : Block Erase Timer  
The status of the multi-block erase operation can be detected via the DQ3 pin. DQ3 will go High if 50µs of the block erase time win-  
dow expires. In this case, the Internal Erase Routine will initiate the erase operation.Therefore, the device will not accept further write  
commands until the erase operation is completed. DQ3 is Low if the block erase time window is not expired. Within the block erase  
time window, an additional block erase command (30H) can be accepted. To confirm that the block erase command has been  
accepted, the software may check the status of DQ3 following each block erase command.  
DQ2 : Toggle Bit 2  
The device generates a toggling pulse in DQ2 only if an Internal Erase Routine or an Erase Suspend is in progress. When the device  
executes the Internal Erase Routine, DQ2 toggles only if an erasing block is read. Although the Internal Erase Routine is in the  
Exceeded Time Limits, DQ2 toggles only if an erasing block in the Exceeded Time Limits is read. When the device is in the Erase  
Suspend mode, DQ2 toggles only if an address in the erasing block is read. If a non-erasing block address is read during the Erase  
Suspend mode, then DQ2 will produce valid data. DQ2 will go High if the user tries to program a non-erase suspend block while the  
device is in the Erase Suspend mode. Combination of the status in DQ6 and DQ2 can be used to distinguish the erase operation  
from the program operation.  
RY/BY : Ready/Busy  
The K8D3216U has a Ready / Busy output that indicates either the completion of an operation or the status of Internal Algorithms. If  
the output is Low, the device is busy with either a program or an erase operation. If the output is High, the device is ready to accept  
any read/write or erase operation. When the RY/ BY pin is low, the device will not accept any additional program or erase commands  
with the exception of the Erase Suspend command. If the K8D3216U is placed in an Erase Suspend mode, the RY/ BY output will be  
High. For programming, the RY/ BY is valid (RY/ BY = 0) after the rising edge of the fourth WE pulse in the four write pulse  
sequence. For Chip Erase, RY/ BY is also valid after the rising edge of WE pulse in the six write pulse sequence. For Block Erase,  
RY/ BY is also valid after the rising edge of the sixth WE pulse.  
The pin is an open drain output, allowing two or more Ready/ Busy outputs to be OR-tied. An appropriate pull-up resistor is required  
for proper operation.  
Rp  
Vcc  
F
VccF (Max.) - VOL (Max.)  
3.2V  
Rp =  
=
IOL + Σ IL  
2.1mA + Σ IL  
Ready / Busy  
open drain output  
where Σ IL is the sum of the input currents of all devices tied to the  
Ready / Busy ball.  
Vss  
Device  
25  
Revision 1.7  
September, 2006  
K8D3x16UTC / K8D3x16UBC  
NOR FLASH MEMORY  
Start  
Read(DQ0~DQ7)  
Valid Address  
Start  
Read(DQ0~DQ7)  
Valid Address  
Read(DQ0~DQ7)  
Valid Address  
DQ6 = Toggle ?  
Yes  
DQ7 = Data ?  
Yes  
No  
No  
No  
No  
DQ5 = 1 ?  
Yes  
DQ5 = 1 ?  
Yes  
Read twice(DQ0~DQ7)  
Valid Address  
Read(DQ0~DQ7)  
Valid Address  
No  
Yes  
DQ6 = Toggle ?  
DQ7 = Data ?  
Yes  
Fail  
No  
Fail  
Pass  
Pass  
Figure 12. Toggle Bit Algorithms  
Figure 11. Data Polling Algorithms  
Start  
RESET=VID  
(Note 1)  
Perform Erase or  
Program Operations  
RESET=VIH  
Temporary Block  
Unprotect Completed  
(Note 2)  
Notes :  
1. All protected block groups are unprotected.  
( If WP/ACC = VIL , the two outermost boot blocks remain protected )  
2. All previously protected block groups are protected once again.  
Figure 13. Temporary Block Group Unprotect Routine  
26  
Revision 1.7  
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K8D3x16UTC / K8D3x16UBC  
NOR FLASH MEMORY  
ABSOLUTE MAXIMUM RATINGS  
Parameter  
Symbol  
Rating  
-0.5 to +4.0  
-0.5 to +12.5  
-0.5 to +12.5  
-0.5 to +4.0  
-10 to +125  
-40 to +125  
-65 to +150  
5
Unit  
Vcc  
Vcc  
A9, OE , RESET  
Voltage on any pin relative to VSS  
WP/ACC  
V
VIN  
All Other Pins  
Commercial  
Temperature Under Bias  
Tbias  
°C  
Industrial  
Storage Temperature  
Tstg  
°C  
mA  
°C  
Short Circuit Output Current  
IOS  
TA (Commercial Temp.)  
TA (Industrial Temp.)  
0 to +70  
Operating Temperature  
-40 to + 85  
°C  
Notes :  
1. Minimum DC voltage is -0.5V on Input/ Output pins. During transitions, this level may fall to -2.0V for periods <20ns. Maximum DC voltage on  
input / output pins is Vcc+0.5V which, during transitions, may overshoot to Vcc+2.0V for periods <20ns.  
2. Minimum DC voltage is -0.5V on A9, OE, RESET and WP/ACC pins. During transitions, this level may fall to -2.0V for periods <20ns. Maximum DC  
voltage on A9, OE, RESET pins is 12.5V which, during transitions, may overshoot to 14.0V for periods <20ns.  
3. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions  
detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.  
RECOMMENDED OPERATING CONDITIONS ( Voltage reference to Vss )  
Parameter  
Symbol  
Min  
2.7  
0
Typ.  
3.0  
0
Max  
3.6  
0
Unit  
V
Supply Voltage  
VCC  
Supply Voltage  
VSS  
V
DC CHARACTERISTICS  
Parameter  
Symbol  
Test Conditions  
Min  
Typ  
Max  
Unit  
Input Leakage Current  
ILI  
VIN=VSS to VCC, VCC=VCCmax  
1.0  
-
-
+ 1.0  
µA  
A9,OE,RESET Input Leakage  
Current  
ILIT  
VCC=VCCmax, A9,OE,RESET=12.5V  
-
35  
µA  
WP/ACC Input Leakage Current  
Output Leakage Current  
ILIW  
ILO  
VCC=VCCmax, WP/ACC=12.5V  
-
-
35  
+ 1.0  
20  
µA  
µA  
VOUT=VSS to VCC,VCC=VCCmax,OE=VIH  
1.0  
-
5MHz  
-
-
-
-
-
14  
3
Active Read Current (1)  
ICC1  
CE=VIL, OE=VIH  
1MHz  
mA  
6
Active Write Current (2)  
ICC2  
ICC3  
ICC4  
CE=VIL, OE=VIH, WE=VIL  
CE=VIL, OE=VIH  
15  
25  
25  
30  
mA  
mA  
mA  
Read While Program Current (3)  
Read While Erase Current (3)  
50  
CE=VIL, OE=VIH  
50  
Program While Erase Suspend  
Current  
ICC5  
IACC  
CE=VIL, OE=VIH  
-
15  
35  
mA  
mA  
ACC Pin  
CE=VIL, OE=VIH  
-
-
5
10  
30  
ACC Accelerated Program  
Current  
Vcc Pin  
15  
VCC=VCCmax,CE, RESET=VCC±0.3V  
WP/ACC= VCC± 0.3V or Vss±0.3V  
Standby Current  
ISB1  
ISB2  
ISB3  
-
-
-
5
5
5
18  
18  
18  
µA  
µA  
µA  
VCC=VCCmax, RESET=Vss± 0.3V,  
WP/ACC=VCC± 0.3V or Vss±0.3V  
Standby Current During Reset  
Automatic Sleep Mode  
VIH=VCC±0.3V, VIL=VSS±0.3V,  
OE=VIL, IOL=IOH=0  
Input Low Level  
Input High Level  
VIL  
-0.5  
-
-
0.8  
V
V
VIH  
0.7xVcc  
VCC+0.3  
Voltage for WP/ACC Block Tempo-  
rarily Unprotect and Program Accel-  
eration (4)  
8.5  
VHH  
VCC = 3.0V ± 0.3V  
-
12.5  
V
27  
Revision 1.7  
September, 2006  
K8D3x16UTC / K8D3x16UBC  
NOR FLASH MEMORY  
Parameter  
Symbol  
Test Conditions  
VCC = 3.0V ± 0.3V  
Min  
Typ  
Max  
Unit  
Voltage for Autoselect and  
Block Protect (4)  
VID  
8.5  
-
12.5  
V
Output Low Level  
VOL  
VOH  
VLKO  
IOL=100µA, VCC=VCCmin  
IOH=-100µA, Vcc = VCCmin  
-
-
-
-
0.4  
-
V
V
V
Output High Level  
VCC-0.4  
1.8  
Low Vcc Lock-out Voltage (5)  
2.5  
Notes :  
1. The ICC current listed includes both the DC operating current and the frequency dependent component(at 5 MHz).  
The read current is typically 14 mA (@ VCC=3.0V , OE at VIH.)  
2. ICC active during Internal Routine(program or erase) is in progress.  
3. ICC active during Read while Write is in progress.  
4. The high voltage ( VHH or VID ) must be used in the range of Vcc = 3.0V ± 0.3V  
5. Not 100% tested.  
6. Typical value are measured at Vcc = 3.0V,TA=25°C , Not 100% tested.  
CAPACITANCE(TA = 25 °C, VCC = 3.3V, f = 1.0MHz)  
Item  
Symbol  
Test Condition  
Min  
Max  
Unit  
pF  
Input Capacitance  
CIN  
VIN=0V  
-
-
-
10  
10  
10  
Output Capacitance  
Control Pin Capacitance  
COUT  
CIN2  
VOUT=0V  
VIN=0V  
pF  
pF  
Note : Capacitance is periodically sampled and not 100% tested.  
AC TEST CONDITION  
Parameter  
Value  
0V to Vcc  
5ns  
Input Pulse Levels  
Input Rise and Fall Times  
Input and Output Timing Levels  
Output Load  
Vcc/2  
CL = 30pF  
Device  
Vcc  
Input & Output  
Vcc/2  
Vcc/2  
* CL= 30pF including Scope  
and Jig Capacitance  
Test Point  
CL  
0V  
Input Pulse and Test Point  
Output Load  
AC CHARACTERISTICS  
Read Operations  
VCC=2.7V~3.6V  
-8  
Parameter  
Symbol  
-7  
-9  
Unit  
Min  
Max  
-
Min  
Max  
-
Min  
Max  
-
Read Cycle Time (1)  
tRC  
tAA  
tCE  
tOE  
tDF  
tOH  
70  
-
80  
-
90  
-
ns  
ns  
ns  
ns  
ns  
ns  
Address Access Time  
70  
70  
25  
16  
-
80  
80  
25  
16  
-
90  
90  
35  
16  
-
Chip Enable Access Time  
Output Enable Time  
-
-
-
-
-
-
CE & OE Disable Time (1)  
Output Hold Time from Address, CE or OE (1)  
-
-
-
0
0
0
Note : 1. Not 100% tested.  
28  
Revision 1.7  
September, 2006  
K8D3x16UTC / K8D3x16UBC  
NOR FLASH MEMORY  
AC CHARACTERISTICS  
Write(Erase/Program)Operations  
Alternate WE Controlled Write  
VCC=2.7V~3.6V  
Parameter  
Symbol  
-7  
-8  
-9  
Unit  
Min  
70  
0
Max  
Min  
80  
0
Max  
Min  
90  
0
Max  
Write Cycle Time (1)  
tWC  
tAS  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Address Setup Time  
Address Hold Time  
tASO  
tAH  
55  
45  
0
55  
45  
0
55  
45  
0
tAHT  
tDS  
Data Setup Time  
35  
0
35  
0
45  
0
Data Hold Time  
tDH  
Output Enable Setup Time (1)  
tOES  
tOEH1  
0
0
0
Output  
Read (1)  
0
0
0
Enable  
Hold Time  
Toggle and Data Polling (1)  
tOEH2  
10  
-
10  
-
10  
-
ns  
CE Setup Time  
tCS  
tCH  
0
0
-
-
-
-
0
0
-
-
-
-
0
0
-
-
-
-
ns  
ns  
ns  
ns  
µs  
µs  
µs  
µs  
sec  
µs  
ns  
ns  
µs  
ns  
ns  
ns  
µs  
µs  
ns  
ns  
ns  
ns  
ns  
CE Hold Time  
Write Pulse Width  
Write Pulse Width High  
tWP  
35  
25  
35  
25  
45  
30  
tWPH  
Word  
Byte  
Word  
Byte