KA1M0880各脚功能电路原理芯片引脚定义引脚图及功能IC贸易商-中国IC网-芯三七

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产品型号KA1M0880的概述

芯片KA1M0880的概述 KA1M0880是一款高性能的集成电路，专为便携式数字设备而设计。其主要应用领域包括移动通讯、智能家居、以及便携式医疗设备。这款芯片结合了先进的电源管理、低功耗设计以及高效的数据处理能力，成为现代电子产品中不可或缺的关键组件。 KA1M0880的设计理念源于对便携式设备日益增长的能效需求。为了满足这一需求，KA1M0880采用了新颖的制造工艺和优化的电路架构，确保在降低功耗的同时维持卓越的性能。这款芯片支持多种工作模式，根据设备的实际使用情况智能调节性能，有效延长了设备的使用时间。 KA1M0880在各种环境下保持稳定的性能，适应不同的温度和湿度条件，具有良好的抗干扰能力。这使得它在复杂的工作环境中仍能稳定运行，满足用户对可靠性的要求。芯片KA1M0880的详细参数 KA1M0880的详细参数如下： - 工作电压范围：2.7V - 5.5V - 工作温度范...

产品型号KA1M0880的Datasheet PDF文件预览

www.fairchildsemi.com

KA1L0880B/KA1M0880B

Fairchild Power Switch(FPS)

Features

Description

• Precision fixed operating frequency

• KA1L0880B(50KHz),KA1M0880B(67KHz)

• Pulse by pulse over current limiting

• Over load protection

• Over voltage protection (Min. 23V)

• Internal thermal shutdown function

• Under voltage lockout

The Fairchild Power Switch(FPS) product family is specially

designed for an off-line SMPS with minimal external

components. The Fairchild Power Switch(FPS) consist of high

voltage power SenseFET and current mode PWM controller IC.

PWM controller features integrated fixed oscillator, under

voltage lock out, leading edge blanking, optimized gate turn-on/

turn-off driver, thermal shut down protection, over voltage

protection, temperature compensated precision current sources

for loop compensation and fault protection circuit. compared to

• Internal high voltage sense FET

• Latch up mode

• Soft start

discrete MOSFET and controller or R switching converter

solution, a Fairchild Power Switch(FPS) can reduce total

component count, design size, weight and at the same time

increase & efficiency, productivity, and system reliability. It has

a basic platform well suited for cost effective design in either a

flyback converter or a forward converter.

TO-3P-5L

1. DRAIN 2. GND 3. V

4. FB 5. S/S

Internal Block Diagram

#3 V

#1 DRAIN

32V

Vref

Internal

bias

SFET

Good

logic

#5 Soft Start

OSC

−

#4 FB

L.E.B

2.5R

5µA

1mA

0.1V

#2 GND

−

7.5V

25V

Thermal S/D

OVER VOLTAGE S/D

Power on reset

−

Rev.1.0.2

KA1L0880B/KA1M0880B

Absolute Maximum Ratings

Parameter

Maximum Drain voltage ⁽¹⁾

Symbol

Value

800

Unit

D,Max

Drain-Gate voltage (R =1MΩ)

DGR

800

Gate-source (GND) voltage

Drain current pulsed ⁽²⁾

Single pulsed avalanche energy ⁽³⁾

Avalanche current ⁽⁴⁾

±30

32.0

810

Continuous drain current (T =25°C)

8.0

Continuous drain current (T =100°C)

5.6

Maximum Supply voltage

Input voltage range

CC,MAX

−0.3 to V

190

W/°C

°C

Total power dissipation

Derating

1.54

Operating ambient temperature

Storage temperature

−25 to +85

−55 to +150

°C

STG

Notes:

1. Tj=25°C to 150°C

2. Repetitive rating: Pulse width limited by maximum junction temperature

3. L=24mH, V =50V, R =25Ω, starting Tj=25°C

4. L=13µH, starting Tj=25°C

KA1L0880B/KA1M0880B

Electrical Characteristics (SFET part)

(Ta=25°C unless otherwise specified)

Parameter

Symbol

Condition

Min.

Typ. Max. Unit

Drain source breakdown voltage

=0V, I =50µA

800

DSS

=Max., Rating,

=0V

µA

Zero gate voltage drain current

DSS

=0.8Max., Rating,

200

µA

=0V, T =125°C

Static drain source on resistance ^(note)

Forward transconductance ^(note)

Input capacitance

=10V, I =5.0A

1.2

2.5

2460

210

1.5

Ω

DS(ON)

gfs

=15V, I =5.0A

1.5

Ciss

=0V, V =25V,

GS DS

Output capacitance

Reverse transfer capacitance

Turn on delay time

Coss

Crss

f=1MHz

=0.5BV

, I =8.0A

DSS D

200

450

150

d(on)

(MOSFET switching

time are essentially

independent of

Rise time

Turn off delay time

150

d(off)

Fall time

operating temperature)

Total gate charge

(gate-source+gate-drain)

=10V, I =8.0A,

=0.5BV (MOSFET

DSS

150

switching time are

essentially independent of

operating temperature)

Gate source charge

Qgs

Qgd

Gate drain (Miller) charge

Note:

Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2%

S = ---

KA1L0880B/KA1M0880B

Electrical Characteristics (CONTROL part)

(Ta=25°C unless otherwise specified)

Parameter

UVLO SECTION

Symbol

Condition

Min.

Typ. Max.

Unit

Start threshold voltage

Stop threshold voltage

OSCILLATOR SECTION

START

After turn on

STOP

KA1L0880B

±5

Initial accuracy

kHz

OSC

KA1M0880B

Frequency change with temperature ⁽²⁾

Maximum duty cycle

∆F/∆T

−25°C ≤ Ta ≤ +85°C

±10

Dmax

FEEDBACK SECTION

Feedback source current

Shutdown Feedback voltage

Shutdown delay current

SOFT START SECTION

Soft Start Voltage

Ta=25°C, 0V ≤ Vfb ≤ 3V

0.7

6.9

4.0

0.9

7.5

5.0

1.1

8.1

6.0

Idelay

Ta=25°C, 5V ≤ Vfb ≤ V

µA

=2V

4.7

0.8

5.0

1.0

5.3

1.2

Soft Start Current

Sync & S/S=GND

REFERENCE SECTION

Output voltage ⁽¹⁾

Temperature Stability ⁽¹⁾⁽²⁾

Vref

Ta=25°C

4.80

5.00

0.3

5.20

0.6

Vref/∆T

−25°C ≤ Ta ≤ +85°C

mV/°C

CURRENT LIMIT (SELF-PROTECTION) SECTION

Peak Current Limit

Max. inductor current

4.40

5.00

5.60

OVER

PROTECTION SECTION

Thermal shutdown temperature (Tj) ⁽¹⁾

Over voltage protection voltage

TOTAL DEVICE SECTION

Start Up current

140

160

°C

OVP

=14V

0.1

0.3

0.45

START

Operating supply current

(control part only)

Ta=25°C

zener voltage

=20mA

32.5

Note:

1. These parameters, although guaranteed, are not 100% tested in production

2. These parameters, although guaranteed, are tested in EDS (wafer test) process

KA1L0880B/KA1M0880B

Typical Performance Characteristics

(These characteristic graphs are normalized at Ta=25°C)

Fig.2 Feedback Source Current

Fig.1 Operating Frequency

1.2

1.15

1.1

1.2

1.15

1.1

1.05

Ifb

0.95

0.9

Fosc

0.95

0.9

0.85

0.8

0.85

0.8

-25

75 100 125 150

- 25

25 50 75 100 125 150

Temperature [°C]

Figure 1. Operating Frequency

Figure 2. Feedback Source Current

Fig.3 Operating Current

Fig.4 Max Inductor Current

1.1

1.05

1.2

1.15

1.1

over

Ipeak 1

0.95

0.9

1.05

Iop

0.95

0.9

0.85

0.8

0.85

0.8

-25

25 50

75 100 125 150

-25

25 50 75 100 125 150

Temperature [°C]

Figure 3. Operating Supply Current

Figure 4. Peak Current Limit

Fig.5 Start up Current

1.5

Fig.6 Start Threshold Voltage

1.15

1.1

1.3

1.1

0.9

0.7

0.5

1.05

th(H)

Istart

Vstart

0.95

0.9

0.85

-25

25 50 75 100 125 150

-25

25 50 75 100 125 150

Temperature [°C]

Figure 5. Start up Current

Figure 6. Start Threshold Voltage

KA1L0880B/KA1M0880B

Typical Performance Characteristics ^(Continued)

(These characteristic graphs are normalized at Ta=25°C)

Fig.7 Stop Threshold Voltage

1.15

Fig.8 Maximum DutyCycle

1.15

1.1

1.05

th(L)

Vstop 1

Dmax

0.95

0.9

0.95

0.9

0.85

-25

25 50 75 100 125 150

-25

25 50 75 100 125 150

Temperature [°C]

Figure 7. Stop Threshold Voltage

Figure 8. Maximum Duty Cycle

Fig.10 Shutdown Feedback Voltage

Fig.9 Vcc Zener Voltage

1.2

1.15

1.1

1.05

0.95

0.9

1.1

1.05

Vsd

0.95

0.9

0.85

0.8

0.85

-25

75 100 125 150

-25

75 100 125 150

Temperature [°C]

Figure 9. V

Zener Voltage

Figure 10. Shutdown Feedback Voltage

Fig.11 Shutdown DelayCurrent

Fig.12 Over Voltage Protection

1.15

1.2

1.15

1.1

1.05

Idelay

Vovp

0.95

0.9

0.85

0.8

0.95

0.9

0.85

-25

25 50

75 100 125 150

-25

25 50 75 100 125 150

Temperature [°C]

Figure 11. Shutdown Delay Current

Figure 12. Over Voltage Protection

KA1L0880B/KA1M0880B

Typical Performance Characteristics ^(Continued)

(These characteristic grahps are normalized at Ta=25°C)

Fig.13 Soft Start Voltage

1.15

Fig.14 Drain Source Turn-on

Resistance

2.5

1.1

1.05

1.5

)

Vss

(

Rdson

0.95

0.9

0.5

0.85

-25

75 100 125 150

-25

25 50 75 100 125 150

Temperature [°C]

Figure 13. Soft Start Voltage

Figure 14. Static Drain Source on Resistance

KA1L0880B/KA1M0880B

Package Dimensions

TO-3P-5L

KA1L0880B/KA1M0880B

Package Dimensions

TO-3P-5L (Forming)

KA1L0880B/KA1M0880B

Ordering Information

Product Number

Package

Rating

Fosc

KA1L0880B-TU

TO-3P-5L

800V, 8A

50kHz

KA1L0880B-YDTU

TO-3P-5L(Forming)

KA1M0880B-TU

TO-3P-5L

800V, 8A

67kHz

KA1M0880B-YDTU

TO-3P-5L(Forming)

TU : Non Forming Type

YDTU : Forming type

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER

DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES

OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR

CORPORATION. As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, and (c) whose failure to

perform when properly used in accordance with

instructions for use provided in the labeling, can be

reasonably expected to result in a significant injury of the

user.

2. A critical component in any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

www.fairchildsemi.com

10/17/01 0.0m 001

Stock#DSxxxxxxxx

2001 Fairchild Semiconductor Corporation

KA1M0880相关文章

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KA1M0880产品参数

型号:	KA1M0880
是否Rohs认证：	不符合
生命周期：	Obsolete
IHS 制造商：	SAMSUNG SEMICONDUCTOR INC
包装说明：	, SIP5,.055TB
Reach Compliance Code：	compliant
ECCN代码：	EAR99
HTS代码：	8542.39.00.01
风险等级：	5.88
Is Samacsys：	N
模拟集成电路 - 其他类型：	SWITCHING REGULATOR
控制模式：	CURRENT-MODE
控制技术：	PULSE WIDTH MODULATION
最大输入电压：	30 V
JESD-30 代码：	R-PSFM-T5
JESD-609代码：	e0
功能数量：	1
端子数量：	5
最高工作温度：	85 °C
最低工作温度：	-25 °C
最大输出电流：	32 A
封装主体材料：	PLASTIC/EPOXY
封装等效代码：	SIP5,.055TB
封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED
认证状态：	Not Qualified
子类别：	Switching Regulator or Controllers
表面贴装：	NO
切换器配置：	SINGLE
最大切换频率：	70 kHz
温度等级：	OTHER
端子面层：	Tin/Lead (Sn/Pb)
端子形式：	THROUGH-HOLE
端子节距：	2.54 mm
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

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