KA5L0365RN原理图各脚功能电路原理芯片引脚定义引脚图及功能-中国IC网-芯三七

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产品型号KA5L0365RN的概述

芯片KA5L0365RN的概述 KA5L0365RN是一款高集成度的电源管理芯片，广泛应用于各类电子设备中。该芯片的设计目标在于简化电源管理系统，提升能量利用效率，并降低整体系统成本。KA5L0365RN的使用广泛覆盖了从消费电子产品到工业设备的应用，尤其在需要高效稳定电源的场合中表现出色。该芯片具备多种功能，包括过压保护、欠压锁定、短路保护等，能够满足现代应用对电源质量的严格要求。该芯片的主要应用领域包括但不限于：便携式设备、家用电器、可穿戴设备及智能手表等。其卓越的性能使其成为电源管理领域中的一个重要组成部分，同时也为用户提供了更为安全、稳定的电源解决方案。芯片KA5L0365RN的详细参数 KA5L0365RN的主要参数如下： - 输入电压范围：4.5V至30V - 输出电流：最大3A - 效率：高达93% - 静态电流：...

产品型号KA5L0365RN的Datasheet PDF文件预览

www.fairchildsemi.com

KA5x03xx-SERIES

KA5H0365R, KA5M0365R, KA5L0365R, KA5M0365RN,

KA5L0365RN, KA5H0380R, KA5M0380R, KA5L0380R

Fairchild Power Switch(FPS)

Features

Description

• Precision Fixed Operating Frequency (100/67/50kHz)

• Low Start-up Current(Typ. 100uA)

• Pulse by Pulse Current Limiting

• Over Current Protection

• Over Voltage Protection (Min. 25V)

• Internal Thermal Shutdown Function

• Under Voltage Lockout

The Fairchild Power Switch(FPS) product family is specially

designed for an off-line SMPS with minimal external

components. The Fairchild Power Switch(FPS) consists of a

high voltage power SenseFET and a current mode PWM IC.

Included PWM controller integrates the fixed frequency

oscillator, the under voltage lock-out, the leading edge

blanking, the optimized gate turn-on/turn-off driver, the

thermal shutdown protection, the over voltage protection,

and the temperature compensated precision current sources

for the loop compensation and the fault protection circuitry.

Compared to a discrete MOSFET and a PWM controller or

an RCCsolution, a Fairchild Power Switch(FPS) can reduce

the total component count, design size and weight and at the

same time increase efficiency, productivity, and system

reliability. It has a basic platform well suited for the cost

effective design in either a flyback converter or a forward

converter

• Internal High Voltage Sense FET

• Auto-Restart Mode

Applications

• SMPS for VCR, SVR, STB, DVD & DVCD

• SMPS for Printer, Facsimile & Scanner

• Adaptor for Camcorder

TO-220F-4L

8-DIP

1.6.7.8 Drain

2. GND

3. V

1. GND 2. Drain 3. V

4. FB

4. FB 5. NC

Internal Block Diagram

#3 V

#2 DRAIN

32V

Vref

Internal

bias

SFET

(*#3 V

)

Good

logic

(*#1.6.7.8 DRAIN)

OSC

5µA

1mA

−

#4 FB

L.E.B

0.1V

2.5R

(*#4 FB)

#1 GND

−

7.5V

27V

Thermal S/D

OVER VOLTAGE S/D

(*#2 GND)

Power on reset

−

*Asterisk - KA5M0365RN, KA5L0365RN

Rev.1.0.5

KA5X03XX-SERIES

Absolute Maximum Ratings

(Ta=25°C, unless otherwise specified)

Characteristic

Symbol

Value

Unit

KA5H0365R, KA5M0365R, KA5L0365R

Maximum Drain Voltage

650

D,MAX

Drain-Gate Voltage (R =1MΩ)

DGR

Gate-Source (GND) Voltage

Drain Current Pulsed ⁽¹⁾

±30

12.0

3.0

Continuous Drain Current (T =25°C)

Continuous Drain Current (T =100°C)

2.4

Single Pulsed Avalanche Energy ⁽²⁾

358

Maximum Supply Voltage

CC,MAX

Analog Input Voltage Range

-0.3 to V

W/°C

°C

Total Power Dissipation

Derating

0.6

Operating Junction Temperature.

Operating Ambient Temperature.

Storage Temperature Range.

+160

-25 to +85

°C

STG

-55 to +150

°C

KA5H0380R, KA5M0380R, KA5L0380R

Maximum Drain Voltage

800

±30

12.0

3.0

2.1

D,MAX

Drain-Gate Voltage (R =1MΩ)

DGR

Gate-Source (GND) Voltage

Drain Current Pulsed ⁽¹⁾

Continuous Drain Current (T =25°C)

Continuous Drain Current (T =100°C)

Single Pulsed Avalanche Energy ⁽²⁾

Maximum Supply Voltage

CC,MAX

Analog Input Voltage Range

-0.3 to V

Total Power Dissipation

Derating

0.6

W/°C

°C

Operating Junction Temperature.

Operating Ambient Temperature.

Storage Temperature Range.

+160

-25 to +85

STG

-55 to +150

Note:

1. Repetitive rating: Pulse width limited by maximum junction temperature

2. L = 51mH, starting Tj = 25°C

3. L = 13µH, starting Tj = 25°C

KA5X03XX-SERIES

Absolute Maximum Ratings

(Ta=25°C, unless otherwise specified)

Characteristic

Symbol

Value

Unit

KA5M0365RN, KA5L0365RN

Maximum Drain Voltage

650

D,MAX

Drain-Gate Voltage (R =1MΩ)

DGR

Gate-Source (GND) Voltage

Drain Current Pulsed ⁽¹⁾

±30

12.0

0.42

0.28

127

Continuous Drain Current (Ta=25°C)

Continuous Drain Current (Ta=100°C)

Single Pulsed Avalanche Energy ⁽²⁾

Maximum Supply Voltage

CC,MAX

Analog Input Voltage Range

-0.3 to V

1.56

W/°C

°C

Total Power Dissipation

Derating

0.0125

+160

Operating Junction Temperature.

Operating Ambient Temperature.

Storage Temperature Range.

-25 to +85

-55 to +150

°C

STG

Note:

1. Repetitive rating: Pulse width limited by maximum junction temperature

2. L = 51mH, starting Tj = 25°C

3. L = 13µH, starting Tj = 25°C

KA5X03XX-SERIES

Electrical Characteristics (SenseFET Part)

(Ta = 25°C unless otherwise specified)

Parameter

Symbol

Condition

Min. Typ. Max. Unit

KA5H0365R, KA5M0365R, KA5L0365R

Drain-Source Breakdown Voltage

DSS

=0V, I =50µA

650

=Max. Rating, V =0V

µA

Zero Gate Voltage Drain Current

DSS

=0.8Max. Rating,

200

µA

=0V, T =125°C

Static Drain-Source on Resistance ^(Note)

Forward Transconductance ^(Note)

Input Capacitance

=10V, I =0.5A

3.6

4.5

Ω

DS(ON)

gfs

=50V, I =0.5A

2.0

Ciss

720

=0V, V =25V,

Output Capacitance

Coss

Crss

f=1MHz

Reverse Transfer Capacitance

Turn On Delay Time

td(on)

=0.5BV

, I =1.0A

DSS

150

100

150

(MOSFET switching

time is essentially

independent of

Rise Time

Turn Off Delay Time

td(off)

Fall Time

operating temperature)

Total Gate Charge

(Gate-Source+Gate-Drain)

=10V, I =1.0A,

=0.5BV

(MOSFET

DSS

switching time is essentially

independent of

operating temperature)

Gate-Source Charge

Qgs

Qgd

7.3

Gate-Drain (Miller) Charge

13.3

KA5H0380R, KA5M0380R, KA5L0380R

Drain-Source Breakdown Voltage

DSS

=0V, I =50µA

800

=Max. Rating, V =0V

250

µA

Zero Gate Voltage Drain Current

DSS

=0.8Max. Rating,

1000

µA

=0V, T =125°C

Static Drain-Source on Resistance ^(Note)

Forward Transconductance ^(Note)

Input Capacitance

=10V, I =0.5A

4.0

2.5

779

75.6

24.9

5.0

Ω

DS(ON)

gfs

=50V, I =0.5A

1.5

Ciss

=0V, V =25V,

Output Capacitance

Coss

Crss

f=1MHz

Reverse Transfer Capacitance

Turn On Delay Time

td(on)

=0.5BV

, I =1.0A

DSS

(MOSFET switching

time is essentially

independent of

Rise Time

Turn Off Delay Time

td(off)

150

Fall Time

operating temperature)

Total Gate Charge

(Gate-Source+Gate-Drain)

=10V, I =1.0A,

=0.5BV

(MOSFET

DSS

switching time is

essentially independent of

operating temperature)

Gate-Source Charge

Qgs

Qgd

7.2

Gate-Drain (Miller) Charge

12.1

Note:

1. Pulse test: Pulse width ≤ 300µS, duty ≤ 2%

S = ---

KA5X03XX-SERIES

Electrical Characteristics (SenseFET Part)

(Ta = 25°C unless otherwise specified)

Parameter

Symbol

Condition

Min. Typ. Max. Unit

KA5M0365RN, KA5L0365RN

Drain-Source Breakdown Voltage

DSS

=0V, I =50µA

650

=Max. Rating, V =0V

µA

Zero Gate Voltage Drain Current

DSS

=0.8Max. Rating,

200

µA

=0V, T =125°C

Static Drain-Source on Resistance ^(Note)

Forward Transconductance ^(Note)

Input Capacitance

=10V, I =0.5A

3.6

4.5

Ω

DS(ON)

gfs

=50V, I =0.5A

2.0

Ciss

314.9

=0V, V =25V,

Output Capacitance

Coss

Crss

f=1MHz

Reverse Transfer Capacitance

Turn On Delay Time

td(on)

=0.5BV

, I =1.0A

DSS

11.2

(MOSFET switching

time is essentially

independent of

Rise Time

Turn Off Delay Time

td(off)

28.2

Fall Time

operating temperature)

Total Gate Charge

(Gate-Source+Gate-Drain)

=10V, I =1.0A,

11.93

=0.5BV

(MOSFET

DSS

switching time is

essentially independent of

operating temperature)

Gate-Source Charge

Qgs

Qgd

1.95

6.85

Gate-Drain (Miller) Charge

Note:

1. Pulse test: Pulse width ≤ 300µS, duty ≤ 2%

S = ---

KA5X03XX-SERIES

Electrical Characteristics (Control Part) ^(Continued)

(Ta = 25°C unless otherwise specified)

Characteristic

Symbol

Test condition

Min. Typ. Max.

Unit

UVLO SECTION

Start Threshold Voltage

Stop Threshold Voltage

OSCILLATOR SECTION

=GND

START

8.4

9.6

STOP

KA5H0365R

KA5H0380R

Initial Accuracy

100

110

kHz

OSC

KA5M0365R

KA5M0365RN

KA5M0380R

Initial Accuracy

OSC

KA5L0365R

KA5L0365RN

KA5L0380R

Initial Accuracy

OSC

kHz

Frequency Change With Temperature ⁽²⁾

Maximum Duty Cycle

-25°C≤Ta≤+85°C

±5

±10

KA5H0365R

KA5H0380R

Dmax

KA5M0365R

KA5M0365RN

KA5M0380R

KA5L0365R

KA5L0365RN

KA5L0380R

Maximum Duty Cycle

FEEDBACK SECTION

Feedback Source Current

Shutdown Feedback Voltage

Shutdown Delay Current

REFERENCE SECTION

Output Voltage ⁽¹⁾

Ta=25°C, 0V<Vfb<3V

0.7

6.9

0.9

7.5

1.1

8.1

Vfb>6.5V

Idelay

Ta=25°C, 5V≤Vfb≤V

µA

Vref

Ta=25°C

4.80 5.00 5.20

0.3

Temperature Stability ⁽¹⁾⁽²⁾

Vref/∆T

-25°C≤Ta≤+85°C

0.6 mV/°C

CURRENT LIMIT(SELF-PROTECTION)SECTION

Peak Current Limit

IOVER

Max. inductor current

1.89 2.15 2.41

PROTECTION SECTION

Over Voltage Protection

Thermal Shutdown Temperature (Tj) ⁽¹⁾

TOTAL STANDBY CURRENT SECTION

Start-up Current

>24V

OVP

140

160

°C

=14V

<28

100

170

µA

START

Operating Supply Current

(Control Part Only)

Note:

1. These parameters, although guaranteed, are not 100% tested in production

2. These parameters, although guaranteed, are tested in EDS(water test) process

KA5X03XX-SERIES

Typical Performance Characteristics(SenseFET part)

(KA5H0365R, KA5M0365R, KA5L0365R)

V_GS

Top: 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

Bottom:4.5V

150 ^oC

-25 C

25 ^oC

@Notes:

1. V_DS= 30V

1. 300 s Pulse Test

2. T_C= 25^o

2. 300 s PulseTest

0.1

V_GS, Gate-Source Voltage [V]

V_DS, Drain-Source Voltage [V]

Figure 2. Transfer Characteristics

Figure 1. Output Characteristics

Vgs=10V

0.1

Vgs=20V

150^oC

25 ^oC

@Notes :

1. VGS=0V

2. 300µs PulseTest

℃

@Note : Tj=25

0.01

0.4

0.6

0.8

1.0

1.2

I_D,Drain Current [A]

V , Source-Drain Voltage [V]

Figure 3. On-Resistance vs. Drain Current

Figure 4. Source-Drain Diode Forward Voltage

700

_iss= C_gs+ C_gd(C_ds= shorted)

C_oss= C_ds+ C_gd

_rss= C_gd

600

500

400

300

200

100

_DS=130V

V_DS=320V

V_DS=520V

iss

C_oss

@Note: I_D=3.0A

rss

Q_G,Total Gate Charge [nC]

V_DS, Drain-Source Voltage [V]

Figure 6. Gate Charge vs. Gate-Source Voltage

Figure 5. Capacitance vs. Drain-Source Voltage

KA5X03XX-SERIES

Typical Performance Characteristics ^(Continued)

1.2

1.1

1.0

0.9

0.8

2.5

2.0

1.5

1.0

0.5

0.0

@ Notes :

1. V_GS= 0V

@ Notes:

1. V_GS= 10V

2. I_D= 1.5 A

2. I_D= 250µA

-50

100

150

-50

100

150

T_J, Junction Temperature [^oC]

T_J, Junction Temperature [ C]

Figure 7. Breakdown Voltage vs. Temperature

Figure 8. On-Resistance vs. Temperature

Operation in This Area

is Limited by R _DS(on)

3.0

2.5

2.0

1.5

1.0

0.5

0.0

100

1 ms

10 ms

@ Notes :

1. T_C= 25 ^o

2. T_J= 150 ^o

3. Single Pulse

-1

-2

100

125

150

T_C, Case Temperature [^oC]

V_DS, Drain-Source Voltage [V]

Figure 10. Max. Drain Current vs. Case Temperature

Figure 9. Max. Safe Operating Area

10⁰

D=0.5

0.2

0.1

10^-1

0.05

@ Notes :

1. Z _JC(t)=1.25 ^oC/W Max.

2. Duty Factor, D=t₁/t₂

3. T_JM-T_C=P_DM*Z _JC(t)

0.02

0.01

single pulse

10^-2

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

10¹

t₁, Square Wave Pulse Duration [sec]

Figure 11. Thermal Response

KA5X03XX-SERIES

Typical Performance Characteristics ^(Continued)

(KA5H0380R, KA5M0380R, KA5L0380R)

Top: 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

Bottom:4.5V

150 ^oC

@Notes:

1. 300µs PulseTest

2. T_C= 25^oC

@ Notes:

1. V_DS= 30 V

2. 300µs PulseTest

25 ^oC

-25 ^oC

-1

V_DS, Drain-Source Voltage [V]

V_GS, Gate-Source Voltage [V]

Figure 1. Output Characteristics

Figure 2. Thansfer Characteristics

Fig3. On-Resistance vs. Drain Current

Vgs=10V

Vgs=20V

25 ^oC

150 ^oC

@ Notes:

1. V_GS= 0V

2. 300µs PulseTest

℃

@Note: Tj=25

0.1

0.4

0.6

0.8

1.0

V_SD, Source-Drain Voltage [V]

I_D,Drain Current

Figure 3. On-Resistance vs. Drain Current

Figure 4. Source-Drain Diode Forward Voltage

1000

_iss= C_gs+ C_gd(C_ds= shorted)

C_oss= C_ds+ C_gd

_rss= C_gd

900

800

700

600

500

400

300

200

100

_DS=160V

_DS=400V

_DS=640V

iss

C_oss

@Note: I_D=3.0A

rss

V_DS, Drain-Source Voltage [V]

Q_G,Total Gate Charge [nC]

Figure 5. Capacitance vs. Drain-Source Voltage

Figure 6. Gate Charge vs. Gate-Source Voltage

KA5X03XX-SERIES

Typical Performance Characteristics ^(Continued)

(KA5H0380R, KA5M0380R, KA5L0380R)

1.2

1.1

1.0

0.9

0.8

2.5

2.0

1.5

1.0

0.5

0.0

@ Notes :

1. V_GS= 0V

2. I_D= 250µA

@ Notes:

1. V_GS= 10V

2. I_D= 1.5 A

-50

100

150

-50

100

150

T_J, Junction Temperature [^oC]

Figure 7. Breakdown Voltage vs. Temperature

Figure 8. On-Resistance vs. Temperature

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

Operation in This Area

is Limited by R _DS(on)

100

1 ms

10 ms

@ Notes :

-1

1. T = 25 ^o

2. T = 150 ^o

3. Single Pulse

-2

100

120

140

T_C, Case Temperature [^oC]

V_DS, Drain-Source Voltage [V]

Figure 10. Max. Drain Current vs. Case Temperature

Figure 9. Max. Safe Operating Area

10⁰

D=0.5

@ Notes :

0.2

0.1

1. Z_θ_JC(t)=1.25 ^oC/W Max.

2. Duty Factor, D=t₁/t₂

3. T_JM-T_C=P_DM*Z_θ_JC(t)

10^-1

0.05

0.02

0.01

single pulse

10^-2

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

10¹

t₁, Square Wave Pulse Duration [sec]

Figure 11. Thermal Response

KA5X03XX-SERIES

Typical Performance Characteristics(SenseFET part) ^(Continued)

(KA5M0365RN, KA5L0365RN)

V_GS

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

10¹

10⁰

10^-1

Bottom : 5.5 V

℃

150

℃

-55

℃

-1

※

Note :

※

Note

1. 250 s Pulse Test

2. T_C= 25

1. V = 50V

^DSμ

℃

2. 250 s Pulse Test

V_DS, Drain-Source Voltage [V]

V_GS, Gate-Source Voltage [V]

Figure 1. Output Characteristics

Figure 2. Transfer Characteristics

8.0

7.5

7.0

6.5

6.0

5.5

5.0

4.5

4.0

3.5

3.0

2.5

10¹

10⁰

10^-1

V_GS= 10V

V_GS= 20V

℃

150

℃

※

Note :

1. V = 0V

2. 250 s Pulse Test

^GSμ

※

℃

Note : T = 25

0.2

0.4

0.6

0.8

1.0

1.2

1.4

I_D, Drain Current [A]

V_SD, Source-Drain Voltage [V]

Figure 3. On-Resistance vs. Drain Current

Figure 4. Source-Drain Diode Forward Voltage

700

C_iss= C_gs+ C_gd(C_ds= shorted)

_oss= C_ds+ C_gd

C_rss= C_gd

600

500

400

300

200

100

V_DS= 130V

iss

= 325V

V_DS= 520V

oss

※

Note ;

rss

1. V_GS= 0 V

2. f = 1 MHz

※

Note : I_D= 3.0 A

10^-1

10⁰

10¹

V_DS, Drain-Source Voltage [V]

Q_G, Total Gate Charge [nC]

Figure 5. Capacitance vs. Drain-Source Voltage

Figure 6. Gate Charge vs. Gate-Source Voltage

KA5X03XX-SERIES

Typical Performance Characteristics ^(Continued)

( KA5M0365RN, KA5L0365RN)

1.15

2.5

1.10

2.0

1.05

1.5

1.00

1.0

0.95

※

Note :

※

Note :

1. V_GS= 0 V

2. I_D= 250

1. V_GS= 10 V

0.5

0.90

2. I_D= 1.5 A

-50

100

150

-50

100

150

T_J, Junction Temperature [^oC]

Figure 8. On-Resistance vs. Temperature

Figure 7. Breakdown Voltage vs. Temperature

0.5

10¹

Operation in This Area

is Limited by R _DS(on)

0.4

0.3

0.2

0.1

0.0

10 µs

100 µs

10⁰

1 ms

10 ms

100 ms

1 s

-1

10 s

-2

-3

10⁰

10¹

10²

100

125

150

V_DS, Drain-Source Voltage [V]

T_C, Case Temperature [? ]

Figure 10. Max. Drain Current vs. Case Temperature

Figure 9. Max. Safe Operating Area

D=0.5

0.2

0.1

0.05

0.02

0.01

Notes :

1. Z_?(t) = 80 ? /W Max.

2. Duty Factor, D=t₁/t₂

3. T_JM- T_C= P_DM* Z_?(t)

single pulse

0.1

1E-5

1E-4

1E-3

0.01

0.1

100

1000

t₁, Square Wave Pulse Duration [sec]

Figure 11. Thermal Response

KA5X03XX-SERIES

Typical Performance Characteristics (Control Part) ^(Continued)

(These characteristic graphs are normalized at Ta = 25°C)

Fig.2 Feedback Source Current

Fig.1 Operating Frequency

1.2

1.15

1.1

1.2

1.15

1.1

1.05

Ifb

0.95

0.9

Fosc

0.95

0.9

0.85

0.8

0.85

0.8

-25

75 100 125 150

-25

25 50 75 100 125 150

Figure 2. Feedback Source Current

Figure 1. Operating Frequency

Fig.3 Operating Current

Fig.4 MaxInductor Current

1.1

1.2

1.15

1.1

1.05

Ipeak 1

1.05

over

0.95

Iop

0.95

0.9

0.85

0.8

0.9

0.85

0.8

-25

25 50

75 100 125 150

-25

25 50 75 100 125 150

Figure 4. Peak Current Limit

Figure 3. Operating Supply Current

Fig.5 Start up Current

Fig.6 Start Threshold Voltage

1.5

1.15

1.1

1.3

1.1

0.9

0.7

0.5

1.05

Istart

Vstart

0.95

0.9

0.85

-25

25 50 75 100 125 150

-25

25 50 75 100 125 150

Figure 6. Start Threshold Voltage

Figure 5. Start up Current

KA5X03XX-SERIES

Typical Performance Characteristics ^(Continued)

(These characteristic graphs are normalized at Ta = 25°C)

Fig.7 Stop Threshold Voltage

1.15

Fig.8 Maximum Duty Cycle

1.15

1.1

1.05

Vstop 1

0.95

Dmax

0.95

0.9

0.85

-25

25 50 75 100 125 150

-25

25 50 75 100 125 150

Figure 8. Maximum Duty Cycle

Figure 7. Stop Threshold Voltage

Fig.9 Vcc Zener Voltage

Fig.10 Shutdown Feedback Voltage

1.2

1.15

1.1

1.05

1.1

1.05

Vsd

0.95

0.9

0.95

0.9

0.85

0.8

0.85

-25

75 100 125 150

-25

75 100 125 150

Figure 10. Shutdown Feedback Voltage

Figure 9. V

Zener Voltage

Fig.11 Shutdown DelayCurrent

Fig.12 Over Voltage Protection

1.15

1.2

1.15

1.1

1.05

1.1

1.05

Idelay

Vovp

0.95

0.9

0.95

0.9

0.85

0.8

0.85

-25

25 50

75 100 125 150

-25

25 50 75 100 125 150

Figure 12. Over Voltage Protection

Figure 11. Shutdown Delay Current

KA5X03XX-SERIES

Typical Performance Characteristics ^(Continued)

(These characteristic graphs are normalized at Ta = 25°C)

Fig.13 Soft Start Voltage

1.15

Fig.14 Drain Source Turn-on

Resistance

2.5

1.1

1.05

1.5

Vss

(

)

Rdson

0.95

0.9

0.5

0.85

-25

75 100 125 150

-25

25 50 75 100 125 150

Figure 14. Static Drain-Source on Resistance

Figure13. Soft Start Voltage

KA5X03XX-SERIES

Package Dimensions

TO-220F-4L

KA5X03XX-SERIES

Package Dimensions ^(Continued)

TO-220F-4L(Forming)

KA5X03XX-SERIES

Package Dimensions ^(Continued)

8-DIP

KA5X03XX-SERIES

Ordering Information

Product Number

KA5H0365RTU

Package

Marking Code

DSS

DS(on)

OSC

TO-220F-4L

5H0365R

650V

100kHz

67kHz

50kHz

3.6Ω

KA5H0365RYDTU

TO-220F-4L(Forming)

KA5M0365RTU

TO-220F-4L

5M0365R

5L0365R

650V

3.6Ω

KA5M0365RYDTU

TO-220F-4L(Forming)

KA5L0365RTU

TO-220F-4L

KA5L0365RYDTU

TO-220F-4L(Forming)

KA5M0365RN

KA5L0365RN

8-DIP

5M0365R

5L0365R

650V

67kHz

50kHz

3.6Ω

Product Number

KA5H0380RTU

Package

TO-220F-4L

Marking Code

DS(on)

DSS

OSC

5H0380R

5M0380R

5L0380R

800V

100kHz

67kHz

50kHz

4.6Ω

KA5H0380RYDTU

TO-220F-4L(Forming)

KA5M0380RTU

TO-220F-4L

4.6Ω

KA5M0380RYDTU

TO-220F-4L(Forming)

KA5L0380RTU

TO-220F-4L

KA5L0380RYDTU

TO-220F-4L(Forming)

TU :Non Forming Type

YDTU : Forming type

KA5X03XX-SERIES

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER

DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES

OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR

CORPORATION. As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, and (c) whose failure to

perform when properly used in accordance with

instructions for use provided in the labeling, can be

reasonably expected to result in a significant injury of the

user.

2. A critical component in any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

www.fairchildsemi.com

12/12/02 0.0m 001

Stock#DSxxxxxxxx

2002 Fairchild Semiconductor Corporation

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KA5L0365RN产品参数

型号:	KA5L0365RN
Brand Name：	Fairchild Semiconductor
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Obsolete
IHS 制造商：	FAIRCHILD SEMICONDUCTOR CORP
零件包装代码：	DIP
包装说明：	DIP,
针数：	8
制造商包装代码：	8LD, MDIP, JEDEC MS-001, .300" WIDE
Reach Compliance Code：	compliant
ECCN代码：	EAR99
HTS代码：	8541.29.00.95
风险等级：	5.72
模拟集成电路 - 其他类型：	SWITCHING REGULATOR
控制模式：	CURRENT-MODE
控制技术：	PULSE WIDTH MODULATION
最小输入电压：	9.6 V
标称输入电压：	14 V
JESD-30 代码：	R-PDIP-T8
JESD-609代码：	e3
长度：	9.2 mm
功能数量：	1
端子数量：	8
最高工作温度：	85 °C
最低工作温度：	-25 °C
最大输出电流：	3 A
封装主体材料：	PLASTIC/EPOXY
封装代码：	DIP
封装形状：	RECTANGULAR
封装形式：	IN-LINE
峰值回流温度（摄氏度）：	NOT APPLICABLE
认证状态：	Not Qualified
座面最大高度：	5.08 mm
表面贴装：	NO
切换器配置：	SINGLE
最大切换频率：	50 kHz
温度等级：	OTHER
端子面层：	Matte Tin (Sn)
端子形式：	THROUGH-HOLE
端子节距：	2.54 mm
端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT APPLICABLE
宽度：	7.62 mm
Base Number Matches：	1

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