KBP06M芯片引脚定义引脚图及功能IC贸易商引脚图技术参数-中国IC网-芯三七

产品型号KBP06M的Datasheet PDF文件预览

WTE

PO WER SEMICONDUCTORS

KBP005M – KBP10M

1.5A GLASS PASSIVATED BRIDGE RECTIFIER

Features

!

Glass Passivated Die Construction

!

Low Forward Voltage Drop

High Current Capability

High Reliability

High Surge Current Capability

Ideal for Printed Circuit Boards

L

A

KBP

Min

Dim

A

B

C

D

E

Max

15.24

11.68

—

B

J

14.22

10.67

15.2

4.57

3.60

2.16

0.76

1.52

11.68

12.7

+

~

-

5.08

4.10

2.67

0.86

—

C

K

Mechanical Data

!

G

H

I

Case: Molded Plastic

H

I

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: As Marked on Body

Weight: 1.7 grams (approx.)

Mounting Position: Any

J

12.7

—

E

K

L

!

G

3.2 x 45° Typical

D

All Dimensions in mm

Marking: Type Number

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

KBP

005M

KBP

01M

KBP

02M

KBP

04M

KBP

06M

KBP

08M

KBP

10M

Characteristic

Symbol

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

50

35

100

70

200

140

400

600

420

800

560

1000

700

V

RMS Reverse Voltage

V^R(RMS)

I^O

280

1.5

V

A

Average Rectified Output Current

(Note 1)

@T_A= 50°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

I^FSM

50

A

Forward Voltage (per element)

@I_F= 1.5A

V^FM

I^RM

1.1

V

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

10

500

µA

Rating for Fusing (t<8.3ms)

I²^t

C^j

10

15

A²s

pF

Typical Junction Capacitance per element (Note 2)

Typical Thermal Resistance (Note 3)

R^ꢀ^JA

T^j,T^STG

28

K/W

°C

Operating and Storage Temperature Range

-55 to +150

Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

3. Thermal resistance junction to ambient mounted on PC board with 12mm²copper pad.

KBP005M – KBP10M

1 of 3

2.0

1.5

10

T_J

=

150°C

T_J

= 25°C

1.0

0.5

0.1

0

Pulse Width

=

300 µs

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0

50

100

150

V_F, INSTANTANEOUS FWD VOLTAGE (V)

Fig. 2 Typical Fwd Characteristics

T, TEMPERATURE (°C)

Fig. 1 Forward Current Derating Curve

100

10

1

50

40

T_j= 25°C

f = 1MHz

T_j= 150°c

Single Half

Sine Wave

(JEDEC Method)

30

20

10

0

1

10

100

1

10

100

V_R, REVERSE VOLTAGE (V)

NUMBER OF CYCLES AT 60 Hz

Fig. 3 Max Non-Repetitive Peak Fwd Surge Current

Fig. 4 Typical Junction Capacitance

10,000

1000

T_j= 150ºC

T_j= 125ºC

100

10

T_j= 100ºC

1.0

T_j= 25ºC

0.1

0.01

0

20

40

60

80

100

120

140

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

Fig. 5 Typical Reverse Characteristics

KBP005M – KBP10M

2 of 3

ORDERING INFORMATION

Product No.

KBP005M

Package Type

Shipping Quantity

SIL Bridge

1000 Units/Box

KBP01M

KBP02M

KBP04M

KBP06M

KBP08M

KBP10M

Shipping quantity given is for minimum packing quantity only. For minimum order

quantity, please consult the Sales Department.

Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, WTE cannot assume any

responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to

manufacturer. WTE reserves the right to change any or all information herein without further notice.

: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in life

WARNING

support devices or systems without the express written approval.

Won-Top Electronics Co., Ltd.

No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan

Phone: 886-7-822-5408 or 886-7-822-5410

Fax: 886-7-822-5417

Email: sales@wontop.com

Internet: http://www.wontop.com

Wepoweryoureveryday.

KBP005M – KBP10M

3 of 3

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型号:	KBP06M
生命周期：	Contact Manufacturer
包装说明：	R-PSIP-W4
Reach Compliance Code：	unknown
ECCN代码：	EAR99
HTS代码：	8541.10.00.80
风险等级：	5.14
最小击穿电压：	600 V
外壳连接：	ISOLATED
配置：	BRIDGE, 4 ELEMENTS
二极管元件材料：	SILICON
二极管类型：	BRIDGE RECTIFIER DIODE
JESD-30 代码：	R-PSIP-W4
最大非重复峰值正向电流：	50 A
元件数量：	4
相数：	1
端子数量：	4
最高工作温度：	150 °C
最低工作温度：	-55 °C
最大输出电流：	1.5 A
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	IN-LINE
最大重复峰值反向电压：	600 V
表面贴装：	NO
端子形式：	WIRE
端子位置：	SINGLE
Base Number Matches：	1

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