KDV214芯片引脚定义引脚图及功能IC贸易商引脚图技术参数-中国IC网-芯三七

产品型号KDV214的Datasheet PDF文件预览

KDV214

SEMICONDUCTOR

VARIABLE CAPACITANCE DIODE

SILICON EPITAXIAL PLANAR DIODE

TECHNICAL DATA

TV TUNING.

FEATURES

G

B

1

·High Capacitance Ratio : C2V/C25V=6.5(Typ.)

·Low Series Resistance : r_S=0.4Ω(Typ.)

·Excellent C-V Characteristics, and Small Tracking Error.

·Useful for Small Size Tuner.

H

2

J

D

C

I

DIM

A

MILLIMETERS

_

2.50+0.1

MAXIMUM RATING (Ta=25℃)

_

+

1.25 0.05

B

C

D

E

_

+

0.90 0.05

CHARACTERISTIC

Reverse Voltage

SYMBOL

V_R

RATING

30

UNIT

V

0.30+0.06/-0.04

M

_

+

1.70 0.05

MIN 0.17

F

G

H

I

_

+

0.126 0.03

V_RM

T_j

Peak Reverse Voltage

Junction Temperature

Storage Temperature Range

35 (R_L=10kΩ)

125

V

1. ANODE

2. CATHODE

0~0.1

1.0 MAX

_

+

0.15 0.05

℃

J

_

K

L

0.4+0.05

T_stg

-55∼125

℃

2

+4/-2

4~6

M

USC

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

Reverse Voltage

SYMBOL

V_R

TEST CONDITION

MIN.

TYP.

MAX.

-

UNIT

V

I_R=1μA

30

-

I_R

V_R=28V

Reverse Current

Capacitance

-

10

nA

pF

-

C_2V

V_R=2V, f=1MHz

V_R=25V, f=1MHz

14.16

2.11

5.90

-

16.25

2.43

7.15

0.55

C_25V

C_2V/C_25V

r_S

Capacitance

-

Capacitance Ratio

Series Resistance

6.50

0.4

V_R=5V, f=470MHz

Ω

Note : Available in matched group for capacitance to 2.5%.

C(Max.)-C(Min.)

≦0.025

C(Min.)

Marking

(V_R=2~25V)

Type Name

U O

2002. 6. 14

Revision No : 2

1/2

KDV214

C_V- V_R

r _s- V_R

100

0.8

0.6

f=1MHz

Ta=25 C

f=50MHz

Ta=25 C

50

30

10

0.4

0.2

0

5

3

1

3

5

10

30

0

4

8

12

16

20

24

28

REVERSE VOLTAGE V (V)

R

REVERSE VOLTAGE V (V)

R

r_S- f

C - Ta

3

0.8

0.6

0.4

0.2

0

V =5V

R

Ta=25 C

f=1MHz

2

1

V =2V

R

14

20

0

25

-1

-2

-40

-20

0

20

40

60

80

50

100

300

500

1K

AMBIENT TEMPERATURE Ta ( C)

FREQUENCY f (MHz)

C(Ta)-C(25)

NOTE : C =

x100

C(25)

2002. 6. 14

Revision No : 2

2/2

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