SMD Type
Transistors
KI2301BDS
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
-20
Typ
Max
Unit
V
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V(BR)DSS VGS = 0 V, ID = -250 ìA
VGS(th) VDS = VGS, ID = -250 ìA
-0.45
-0.95
100
-1
IGSS
nA
A
VDS = 0 V, VGS =
8 V
VDS = -20 V, VGS = 0 V
Zero Gate Voltage Drain Current
On-State Drain Current
IDSS
-10
VDS = -20 V, VGS = 0 V, TJ = 55
-6
-3
VDS
VDS
-5 V, VGS = -4.5 V
-5 V, VGS = -2.5 V
ID(on)
A
VGS = -4.5 V, ID = -2.8 A
VGS = -2.5 V, ID = -2.0 A
VDS = -5 V, ID = -2.8 A
IS = -0.75 A, VGS = 0 V
0.08
0.11
6.5
-0.8
4.5
0.7
1.1
375
95
0.1
Drain-Source On-State Resistance *
rDS(on)
0.15
Forward Transconductance *
Diode Forward Voltage *
Total Gate Charge
gfs
VSD
Qg
S
V
-1.2
10
VDS = -6V ,VGS = -4.5 V , ID= -2.8 A
nC
pF
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
Input Capacitance
VDS = -6V ,VGS = 0 , f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
65
20
30
60
45
30
Turn-On Time
Turn-Off Time
40
VDD = -6V , RL = 6Ù ,
ns
ID = -1A , VGEN =- 4.5V , RG = 6Ù
td(off)
tf
30
20
* Pulse test: PW
300 ìs duty cycle
2%.
Marking
Marking
L1
2
www.kexin.com.cn