SMD Type
SMD Type
MDOiSoFdEesT
IC
Product specification
KI2302DS
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
VDSS
Testconditons
VGS = 0 V, ID = 10 ìA
Min
20
Typ Max
Unit
V
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
VGS(th)
0.62 0.95
1.9
1
VDS = VGS, ID = 250 μA
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55℃
VDS = 0 V, VGS = ±8 V
VGS = 4.5 V, ID = 3.6 A
VGS = 2.5 V, ID = 3.1 A
VDS ≥ 5 V, VGS = 4.5 V
VDS ≥ 5 V, VGS = 2.5 V
VDS = 5 V, ID = 3.6 A
V
Zero Gate Voltage Drain Current
IDSS
μA
nA
Ω
10
Gate-Body Leakage
IGSS
±100
0.045 0.085
0.070 0.115
Drain-Source On-Resistance *
rDS(on)
6
4
On-State Drain Current
ID(on)
A
Forward Transconductance *
Input Capacitance
gfs
Ciss
Coss
Crss
Qg
8
S
300
120
80
VDS=10V,VGS=0V,f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
4.0
0.65
1.5
7
10
VDS=10V,VGS=4.5V,ID=3.6A
nC
Gate-Source Charge
Qgs
Qgd
td(on)
tr
Gate-Drain Charge
Turn-On Delay Time
15
80
60
25
Rise Time
55
VDD=10V,RL=5.5
ns
Ù,ID≅3.6A,VGEN=4.5V,RG=6Ù
Turn-Off Delay Time
td(off)
tf
16
Fall-Time
10
Continuous Source Current (Diode Conduction)
Diode Forward Voltage
*Pulse test: PW ≤ 300 ìs duty cycle≤ 2%..
IS
0.94
0.76
A
V
VSD
IS = 0.94A, VGS = 0 V
1.2
Marking
Marking
A2SHB
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