SMD Type
TransistIoCrs
KI2306DS
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
30
1
Typ
Max
Unit
V
Drain-source breakdown voltage
Gate threshold voltage
Gate-body leakage
V(BR)DSS VGS = 0 V, ID = 250 ìA
VGS(th) VDS = VGS, ID = 250 ìA
IGSS
nA
ìA
VDS = 0 V, VGS =
20 V
100
0.5
10
VDS = 30V, VGS = 0 V
Zero gate voltage drain current
On-state drain current
IDSS
VDS =30V, VGS = 0 V, TJ = 55
6
4
VDS
VDS
4.5 V, VGS = 10 V
4.5 V, VGS = 4.5 V
ID(on)
A
VGS = 10 V, ID = 3.5 A
VGS =4.5 V, ID =2.8 A
0.046 0.057
0.070 0.094
6.9
Drain-source on-state resistance
rDS(on)
Ù
Forward transconductance
Diode forward voltage
gate charge *
gfs
VSD
Qg
VDS =4.5 V, ID = 3.5 A
IS = 1.25 A, VGS = 0 V
VDS = 15V ,VGS =5V , ID= 3.5 A
S
V
0.8
4.2
1.2
7
nC
Total gate charge *
Gate-source charge *
Gate-drain charge *
Gate Resistance
Qgt
Qgs
Qgd
Rg
8.5
15
VDS = 15V ,VGS = 10 V , ID= 3.5 A
nC
Ù
1.9
1.35
0.5
2.4
Input capacitance *
Output capacitance *
Reverse transfer capacitance *
Ciss
Coss
Crss
td(on)
tr
555
120
60
VDS = 15V ,VGS = 0 , f = 1 MHz
pF
9
20
18
35
12
Turn-on time
Turn-off time
7.5
17
VDD = 15V , RL = 15Ù ,
ns
ID = 1A , VGEN =-10V , RG = 6Ù
td(off)
tf
5.2
* Pulse test: PW
300 ìs duty cycle
2%.
Marking
Marking
A6
2
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