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产品型号KSA1015Y的Datasheet PDF文件预览

KSA1015

LOW FREQUENCY AMPLIFIER

•

Collector-Base Voltage : V

Complement to KSC1815

= -50V

CBO

TO-92

1. Emitter 2. Collector 3. Base

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Ratings

-50

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

CBO

-50

CEO

EBO

-5

-150

-50

°C

Base Current

Collector Power Dissipation

Junction Temperature

Storage Temperature

400

125

-65 ~ 150

°C

ST9

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

-50

-5

Typ.

Max.

Units

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

I = -100µA, I =0

CBO

CEO

EBO

I = -10mA, I =0

C B

I = -10µA, I =0

= -50V, I =0

-0.1

400

µA

CBO

EBO

Emitter Cut-off Current

= -5V, I =0

DC Current Gain

= -6V, I = -2mA

FE1

FE2

= -6V, I = -150mA

(sat)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

Output Capacitance

I = -100mA, I = -10mA

-0.1

-0.3

-1.1

I = -100mA, I = -10mA

= -10V, I =-1mA

MHz

= -10V, I =0, f=1MHz

Noise Figure

= -6V, I = -0.1mA

0.5

f=100Hz, R =10kΩ

Classification

70 ~ 140

120 ~ 240

200 ~ 400

FE1

Rev. A3, September 2002

Typical Characteristics

-50

1000

100

V_CE= -6V

-45

I_B= -400µA

-40

I_B= -350µA

I_B= -300µA

-35

I_B= -250µA

I_B= -200µA

I_B= -150µA

-30

-25

-20

-15

-10

-5

I_B= -100µA

I_B= -50µA

-0.1

-2

-4

-6

-8

-10

-12

-14

-16

-18

-20

-1

-10

-100

V_CE[V], COLLECTOR-EMITTER VOLTAGE

I_C[mA], COLLECTOR CURRENT

Figure 1. Static Characteristic

Figure 2. DC current Gain

-10

-100

-10

-1

I_C=10I_B

V_CE=-6V

-1

V_BE(sat)

V_CE(sat)

-0.1

-0.01

-0.1

-0.0

-1

-10

-100

-0.2

-0.4

-0.6

-0.8

-1.0

-1.2

I_C[mA], COLLECTOR CURRENT

V_BE(sat)[V], BASE-EMITTER VOLTAGE

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

Figure 4. Base-Emitter On Voltage

1000

100

V_CE=-6V

f=1MHz

I_E=0

-1

-10

-100

-1

-10

V_CB[V], COLLECTOR-BASE VOLTAGE

I_C[mA], COLLECTOR CURRENT

Figure 5. Collector Output Capacitance

Figure 6. Current Gain Bandwidth Product

Rev. A3, September 2002

Package Dimensions

TO-92

+0.25

–0.15

4.58

0.46 ±0.10

+0.10

–0.05

1.27TYP

0.38

[1.27 ±0.20

]

[1.27 ±0.20]

3.60 ±0.20

(R2.29)

Dimensions in Millimeters

Rev. A3, September 2002

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not

intended to be an exhaustive list of all such trademarks.

ACEx™

FACT™

ImpliedDisconnect™ PACMAN™

SPM™

ActiveArray™

Bottomless™

CoolFET™

CROSSVOLT™ FRFET™

DOME™

FACT Quiet series™ ISOPLANAR™

POP™

Stealth™

FAST^®

LittleFET™

MicroFET™

MicroPak™

Power247™

PowerTrench^®

QFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

FASTr™

GlobalOptoisolator™ MICROWIRE™

QS™

EcoSPARK™

E²CMOS™

EnSigna™

Across the board. Around the world.™

The Power Franchise™

GTO™

HiSeC™

I²C™

MSX™

MSXPro™

OCX™

OCXPro™

OPTOLOGIC^®

OPTOPLANAR™

QT Optoelectronics™ TinyLogic™

Quiet Series™

TruTranslation™

RapidConfigure™

RapidConnect™

UHC™

UltraFET^®

SILENT SWITCHER^®VCX™

SMART START™

Programmable Active Droop™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. I1

KSA1015Y相关文章

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KSA1015Y产品参数

型号:	KSA1015Y
是否Rohs认证：	不符合
生命周期：	Obsolete
包装说明：	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code：	compliant
ECCN代码：	EAR99
HTS代码：	8541.21.00.95
风险等级：	5.77
最大集电极电流 (IC)：	0.15 A
集电极-发射极最大电压：	50 V
配置：	SINGLE
最小直流电流增益 (hFE)：	120
JEDEC-95代码：	TO-92
JESD-30 代码：	O-PBCY-T3
JESD-609代码：	e0
元件数量：	1
端子数量：	3
最高工作温度：	125 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND
封装形式：	CYLINDRICAL
极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.4 W
认证状态：	Not Qualified
子类别：	Other Transistors
表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)
端子形式：	THROUGH-HOLE
端子位置：	BOTTOM
晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON
标称过渡频率 (fT)：	80 MHz
Base Number Matches：	1

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