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产品型号KSA1381ESTU的概述

KSA1381ESTU芯片概述 KSA1381ESTU是一款高增益、NPN型晶体管，广泛用于音频放大器、开关电路及高频信号放大等领域。该芯片采用小型封装，适合在空间有限的电子设备中使用，如移动设备和家用电器。KSA1381ESTU的设计结合了优越的电气特性和稳定的性能，使其成为电子工程师在开发新的电路时的重要选择。 KSA1381ESTU的详细参数 KSA1381ESTU的技术参数如下： - 最大集电极电压（Vce）： 50V - 最大发射极电压（Vee）： 5V - 最大集电极电流（Ic）： 1A - 发射极总功耗（Ptot）： 0.625W - 增益带宽积（fT）： 100MHz - 直流电流增益（hFE）： 100-320（在Ic=100mA时） - 封装形式： SOT-23 这些参数显示了KSA1381ESTU在高频应用中的优越性能，能在较高的电压和电流条件下稳定工作。 KS...

产品型号KSA1381ESTU的Datasheet PDF文件预览

March 2008

2SA1381/KSA1381

PNP Epitaxial Silicon Transistor

Applications

•

Audio, Voltage Amplifier and Current Source

CRT Display, Video Output

General Purpose Amplifier

Features

•

High Voltage : V_CEO= -300V

Low Reverse Transfer Capacitance : C_re= 2.3pF at V_CB= -30V

Excellent Gain Linearity for low THD

High Frequency: 150MHz

Full thermal and electrical Spice models are available

Complement to 2SC3503/KSC3503

TO-126

1. Emitter 2.Collector 3.Base

Absolute Maximum Ratings*

T = 25°C unless otherwise noted

Symbol

Parameter

Ratings

-300

Units

BV_CBO

BV_CEO

BV_EBO

I_C

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current(DC)

Collector Current(Pulse)

-300

-5

-100

I_CP

-200

P_C

Total Device Dissipation, T_C=25°C

T_C=125°C

1.2

T_J, T_STG

Junction and Storage Temperature

- 55 ~ +150

°C

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics* T =25°C unless otherwise noted

Symbol

Parameter

Max.

Units

R_θJC

Thermal Resistance, Junction to Case

17.8

°C/W

* Device mounted on minimum pad size

Classification

h_FE

40 ~ 80

60 ~ 120

100 ~ 200

160 ~ 320

2SA1381/KSA1381 Rev. A1

www.fairchildsemi.com

Electrical Characteristics* T_a=25°C unless otherwise noted

Symbol

BV_CBO

BV_CEO

BV_EBO

I_CBO

Parameter

Collector-Base Breakdown Voltage

Collecto- Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Test Condition

I_C= - 10µA, I_E= 0

Min. Typ. Max. Units

- 300

- 5

I_C= - 1mA, I_B= 0

I_E= - 10µA, I_C= 0

V_CB= - 200V, I_E= 0

V_EB= - 4V, I_C= 0

- 0.1

320

- 0.6

- 1

µA

I_EBO

Emitter Cut-off Current

h_FE

DC Current Gain

V_CE= - 10V, I_C= - 10mA

I_C= - 20mA, I_B= - 2mA

V_CE= - 30V, I_C= - 10mA

V_CB= - 30V, f = 1MHz

V_CE(sat)

V_BE(sat)

f_T

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

Output Capacitance

150

3.1

2.3

MHz

C_ob

C_re

Reverse Transfer Capacitance

* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%

Ordering Information

Part Number*

2SA1381CSTU

2SA1381DSTU

2SA1381ESTU

2SA1381FSTU

KSA1381CSTU

KSA1381DSTU

KSA1381ESTU

KSA1381FSTU

Marking

2SA1381C

2SA1381D

2SA1381E

2SA1381F

A1381C

Package

TO-126

Packing Method

TUBE

Remarks

hFE1 C grade

hFE1 D grade

hFE1 E grade

hFE1 F grade

hFE1 C grade

hFE1 D grade

hFE1 E grade

hFE1 F grade

TUBE

A1381D

TUBE

A1381E

TUBE

A1381F

TUBE

* 1. Affix “-S-” means the standard TO126 Package.(see package dimensions). If the affix is ”-STS-” instead of “-S-”, that mean the short-lead TO126 package.

2. Suffix “-TU” means the tube packing, The Suffix “TU” could be replaced to other suffix character as packing method.

2SA1381/KSA1381 Rev. A1

www.fairchildsemi.com

Typical Characteristics

-20

-10

-8

I_B= -140µA

I_B= -60µA

I_B= -50µA

I_B= -120µA

-16

-12

-8

I_B= -100µA

I_B= -80µA

I_B= -40µA

I_B= -30µA

-6

I_B= -60µA

I_B= -40µA

-4

I_B= -20µA

I_B= -10µA

-4

I_B= -20µA

I_B= 0µA

-2

I_B= 0µA

-0

-2

-4

-6

-8

-10

-0

-20

-40

-60

-80

-100

V_CE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic

Figure 2. Static Characteristic

-10

100

I_C= 10 I_B

V_CE= -10V

V_BE(sat)

-1

V_CE(sat)

-0.1

-0.01

-0.1

-1

-10

-100

-0.1

-1

-10

-100

I_C[mA], COLLECTOR CURRENT

Figure 3. DC current Gain

Figure 4. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

-160

1000

100

V_CE= -30V

V_CE= -10V

-140

-120

-100

-80

-60

-40

-20

-0

-0.1

-1

-10

-100

-1000

-0.0

-0.2

-0.4

-0.6

-0.8

-1.0

-1.2

V_BE[V], BASE-EMITTER VOLTAGE

I_C[mA], COLLECTOR CURRENT

Figure 5. Current Gain Bandwidth Product

Figure 6. Base-Emitter On Voltage

2SA1381/KSA1381 Rev. A1

www.fairchildsemi.com

Typical Characteristics (Continued)

100

I_E=0

f=1MHz

0.1

-0.1

-1

-10

-100

-1000

-0.1

-1

-10

-100

-1000

V_CB[V], COLLECTOR-BASE VOLTAGE

Figure 7. Collector Output Capacitance

Figure 8. Reverse Transfer Capacitance

1000

I_CMAX. (Pulse)

I_CMAX.

100

T_c=25^oC

1ms

10ms

T_C=125^oC

100

1000

100

125

150

175

T[^oC], TEMPERATURE

V_CE[V], COLLECTOR-EMITTER VOLTAGE

Figure 9. Safe Operating Area

Figure 10. Power Derating

2SA1381/KSA1381 Rev. A1

www.fairchildsemi.com

Package Dimensions

TO-126

8.00 0.30

3.25 0.20

ø3.20 0.10

(1.00)

(0.50)

0.75 0.10

1.75 0.20

1.60 0.10

0.75 0.10

+0.10

–0.05

0.50

2.28TYP

[2.28 0.20]

2.28TYP

[2.28 0.20]

Dimensions in Millimeters

2SA1381/KSA1381 Rev. A1

www.fairchildsemi.com

TRADEMARKS

The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and

is not intended to be an exhaustive list of all such trademarks.

ACEx^®

Green FPS™

Green FPS™ e-Series™

GTO™

i-Lo™

IntelliMAX™

ISOPLANAR™

MegaBuck™

MICROCOUPLER™

MicroFET™

Power247^®

SuperSOT™-8

SyncFET™

Build it Now™

CorePLUS™

CROSSVOLT™

CTL™

Current Transfer Logic™

EcoSPARK^®

POWEREDGE^®

Power-SPM™

PowerTrench^®

Programmable Active Droop™

QFET^®

The Power Franchise^®

TinyBoost™

TinyBuck™

TinyLogic^®

TINYOPTO™

TinyPower™

TinyPWM™

TinyWire™

µSerDes™

UHC^®

QS™

QT Optoelectronics™

Quiet Series™

RapidConfigure™

SMART START™

SPM^®

STEALTH™

SuperFET™

SuperSOT™-3

SuperSOT™-6

Fairchild^®

Fairchild Semiconductor^®

FACT Quiet Series™

FACT^®

MicroPak™

MillerDrive™

Motion-SPM™

OPTOLOGIC^®

FAST^®

FastvCore™

FPS™

OPTOPLANAR^®

UniFET™

VCX™

FRFET^®

PDP-SPM™

Power220^®

Global Power Resource^SM

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS

HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF

THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE

UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF

FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE

PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR

SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body, or

(b) support or sustain life, and (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to result

in significant injury to the user.

A critical component is any component of a life support

device or system whose failure to perform can be reasonably

expected to cause the failure of the life support device or

system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

This datasheet contains the design specifications for product development.

Specifications may change in any manner without notice.

Advance Information

Formative or In Design

This datasheet contains preliminary data; supplementary data will be pub-

lished at a later date. Fairchild Semiconductor reserves the right to make

changes at any time without notice to improve design.

Preliminary

First Production

Full Production

Not In Production

This datasheet contains final specifications. Fairchild Semiconductor reserves

the right to make changes at any time without notice to improve design.

No Identification Needed

Obsolete

This datasheet contains specifications on a product that has been discontin-

ued by Fairchild semiconductor. The datasheet is printed for reference infor-

mation only.

Rev. I31

2SA1381/KSA1381 Rev. A1

www.fairchildsemi.com

KSA1381ESTU相关文章

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KSA1381ESTU产品参数

型号:	KSA1381ESTU
Brand Name：	Fairchild Semiconductor
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Transferred
IHS 制造商：	FAIRCHILD SEMICONDUCTOR CORP
零件包装代码：	TO-126
包装说明：	FLANGE MOUNT, R-PSFM-T3
针数：	3
制造商包装代码：	TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD)
Reach Compliance Code：	compliant
ECCN代码：	EAR99
HTS代码：	8541.29.00.95
风险等级：	5.53
Samacsys Description：	ON SEMICONDUCTOR - KSA1381ESTU - TRANSISTOR, BIPOL, PNP, -300V, TO-225AA
最大集电极电流 (IC)：	0.1 A
集电极-发射极最大电压：	300 V
配置：	SINGLE
最小直流电流增益 (hFE)：	100
JEDEC-95代码：	TO-126
JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e3
元件数量：	1
端子数量：	3
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	PNP
最大功率耗散 (Abs)：	7 W
认证状态：	Not Qualified
子类别：	Other Transistors
表面贴装：	NO
端子面层：	Matte Tin (Sn)
端子形式：	THROUGH-HOLE
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON
标称过渡频率 (fT)：	150 MHz

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