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产品型号KSC1623LMTF的Datasheet PDF文件预览

KSC1623

Low Frequency Amplifier & High Frequency

OSC.

•

Complement to KSA812

SOT-23

1. Base 2. Emitter 3. Collector

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Ratings

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

CBO

CEO

EBO

100

°C

Collector Power Dissipation

Junction Temperature

Storage Temperature

200

150

-55 ~ 150

°C

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Collector Cut-off Current

Emitter Cut-off Current

Test Condition

Min.

Typ.

Max.

0.1

Units

=60V, I =0

µA

CBO

EBO

=5V, I =0

0.1

DC Current Gain

=6V, I =1mA

200

0.15

0.86

0.62

250

600

0.3

(sat)

(on)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter On Voltage

Current Gain Bandwidth Product

Output Capacitance

I =100mA, I =10mA

1.0

=6V, I =1mA

0.55

0.65

=6V, I =10mA

MHz

=6V, I =0, f=1MHz

Classification

90 ~ 180

135 ~ 270

200 ~ 400

300 ~ 600

Marking

C1O

grade

Rev. A2, September 2002

Typical Characteristics

100

V_CE= 6V

I_B= 400µA

I_B= 350µA

I_B= 300µA

I_B= 250µA

I_B= 200µA

I_B= 150µA

I_B= 100µA

I_B= 50µA

0.1

0.0

0.2

0.4

0.6

0.8

1.0

1.2

V_BE[V],BASE-EMITTER VOLTAGE

V_CE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Charactersitic

Figure 2. Transfer Characteristic

I_C=10I_B

V_CE= 6V

V_BE(sat)

1000

100

1000

V_CE(sat)

100

1000

100

1000

I_C[mA], COLLECTOR CURRENT

Figure 3. DC current Gain

Figure 4. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

100

1000

V_CE=6V

f=1MHz

I_E=0

100

0.1

100

1000

0.1

100

V_CB(V), COLLECTOR-BASE VOLTAGE

I_C[mA], COLLECTOR CURRENT

Figure 5. Output Capacitance

Figure 6. Current Gain Bandwidth Product

Rev. A2, September 2002

Package Dimensions

SOT-23

0.40 ±0.03

0.03~0.10

0.38 REF

+0.05

–0.023

0.40 ±0.03

0.12

0.96~1.14

2.90 ±0.10

0.95 ±0.03 0.95 ±0.03

1.90 ±0.03

0.508REF

Dimensions in Millimeters

Rev. A2, September 2002

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not

intended to be an exhaustive list of all such trademarks.

ACEx™

FACT™

ImpliedDisconnect™ PACMAN™

SPM™

ActiveArray™

Bottomless™

CoolFET™

CROSSVOLT™ FRFET™

DOME™

FACT Quiet series™ ISOPLANAR™

POP™

Stealth™

FAST^®

LittleFET™

MicroFET™

MicroPak™

Power247™

PowerTrench^®

QFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

FASTr™

GlobalOptoisolator™ MICROWIRE™

QS™

EcoSPARK™

E²CMOS™

EnSigna™

Across the board. Around the world.™

The Power Franchise™

GTO™

HiSeC™

I²C™

MSX™

MSXPro™

OCX™

OCXPro™

OPTOLOGIC^®

OPTOPLANAR™

QT Optoelectronics™ TinyLogic™

Quiet Series™

TruTranslation™

RapidConfigure™

RapidConnect™

UHC™

UltraFET^®

SILENT SWITCHER^®VCX™

SMART START™

Programmable Active Droop™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. I1

型号:	KSC1623LMTF
是否无铅：	不含铅
生命周期：	Active
IHS 制造商：	ROCHESTER ELECTRONICS LLC
零件包装代码：	SOT-23
包装说明：	LEAD FREE, SOT-23, 3 PIN
针数：	3
Reach Compliance Code：	unknown
风险等级：	5.51
Is Samacsys：	N
最大集电极电流 (IC)：	0.1 A
集电极-发射极最大电压：	50 V
配置：	SINGLE
最小直流电流增益 (hFE)：	300
JESD-30 代码：	R-PDSO-G3
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	1
端子数量：	3
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	NPN
认证状态：	COMMERCIAL
表面贴装：	YES
端子面层：	MATTE TIN
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	30
晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON
标称过渡频率 (fT)：	250 MHz
Base Number Matches：	1

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