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产品型号KSC2258的Datasheet PDF文件预览

KSC2258/2258A

High Voltage General Amplifier

TV Video Output Amplifier

•

High BV

CEO

TO-126

1. Emitter 2.Collector 3.Base

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

CBO

: KSC2258

: KSC2258A

250

300

CEO

EBO

: KSC2258

: KSC2258A

250

300

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

100

150

Collector Dissipation (T =25°C)

Junction Temperature

Storage Temperature

150

°C

- 55 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Emitter-Base Breakdown Voltage

Collector Cut-off Current

DC Current Gain

Test Condition

Min.

Typ.

Max.

Units

I = 0.1mA, I = 0

EBO

CER

= 250V, R = 100KΩ

100

µA

= 20V, I = 40mA

FE1

= 50V, I = 5mA

FE2

(sat)

(on)

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

= 50mA, I = 5mA

1.2

= -20V, I = 40mA

Current Gain Bandwidth Product

Output Capacitance

= 10V, I = 10mA

100

MHz

= 50V, f = 1MHz

4.5

Rev. A, February 2000

Typical Characteristics

100

1000

100

I_B=2.0mA

I_B=1.8mA

I_B=1.6mA

I_B=1.4mA

I_B=1.2mA

I_B=1.0mA

I_B=0.8mA

I_B=0.6mA

V_CE= 10V

I_B=0.4mA

I_B=0.2mA

0.1

100

V_CE[V], COLLECTOR-EMITTER VOLTAGE

I_C[mA], COLLECTOR CURRENT

Figure 1. Static Characteristic

Figure 2. DC current Gain

I_C= 10 I_B

f = 1 MHz

V_CE(sat)

0.1

0.01

100

1000

100

V_CB[V], COLLECTOR BASE VOLTAGE

I_C[mA], COLLECTOR CURRENT

Figure 3. Collector-Emitter Saturation Voltage

Figure 4. Collector Output Capacitance

1000

V_CB= 10 V

100

125

150

175

200

225

250

100

T_C[^oC], CASE TEMPERATURE

I_C[mA], COLLECTOR CURRENT

Figure 5. Current Gain Bandwidth Product

Figure 6. Power Derating

Rev. A, February 2000

Package Demensions

TO-126

8.00 ±0.30

3.25 ±0.20

ø3.20 ±0.10

(1.00)

(0.50)

0.75 ±0.10

1.75 ±0.20

1.60 ±0.10

0.75 ±0.10

+0.10

–0.05

0.50

2.28TYP

[2.28±0.20]

2.28TYP

[2.28±0.20]

Dimensions in Millimeters

Rev. A, February 2000

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

ACEx™

HiSeC™

SuperSOT™-8

SyncFET™

TinyLogic™

UHC™

Bottomless™

CoolFET™

CROSSVOLT™

E²CMOS™

FACT™

ISOPLANAR™

MICROWIRE™

POP™

PowerTrench^®

QFET™

VCX™

FACT Quiet Series™

QS™

FAST^®

Quiet Series™

SuperSOT™-3

SuperSOT™-6

FASTr™

GTO™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

INTERNATIONAL.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. E

型号:	KSC2258
是否Rohs认证：	不符合
生命周期：	Obsolete
IHS 制造商：	FAIRCHILD SEMICONDUCTOR CORP
零件包装代码：	SIP
包装说明：	FLANGE MOUNT, R-PSFM-T3
针数：	3
Reach Compliance Code：	unknown
ECCN代码：	EAR99
风险等级：	5.82
外壳连接：	ISOLATED
最大集电极电流 (IC)：	0.1 A
集电极-发射极最大电压：	250 V
配置：	SINGLE
最小直流电流增益 (hFE)：	40
JEDEC-95代码：	TO-126
JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e0
元件数量：	1
端子数量：	3
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	NPN
最大功率耗散 (Abs)：	4 W
认证状态：	Not Qualified
子类别：	Other Transistors
表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)
端子形式：	THROUGH-HOLE
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON
标称过渡频率 (fT)：	100 MHz
Base Number Matches：	1

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