KSC945CYTA原理图各脚功能电路原理芯片引脚定义引脚图及功能-中国IC网-芯三七

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产品型号KSC945CYTA的概述

KSC945CYTA的概述 KSC945CYTA是一款广泛应用于电子电路中的双极型晶体管（BJT），属于NPN型晶体管。其主要构造是由掺杂形成的半导体材料构成，这种材料允许电流的有效通过，广泛应用于信号放大、开关操作和模拟电路中。由于其高增益、高频响应及温度稳定性，KSC945CYTA在众多电子设备中得到了广泛的应用，如音频放大器、射频放大器及简单开关电路等。 KSC945CYTA的详细参数 KSC945CYTA具有以下主要参数： - 类型：NPN晶体管 - 最大集电极电压（V_CEO）：50V - 最大基极电压（V_BEO）：5V - 最大集电极电流（I_C）：800mA - 直流电流增益（h_FE）：100到400 - 功耗（P_T）：625mW（可在适当的散热条件下更高） - 频率特性：截止频率（f_T）为150MHz，显示了其在高频应用中的有效性。该晶体管的封装形式为SOT-...

产品型号KSC945CYTA的Datasheet PDF文件预览

KSC945

Audio Frequency Amplifier & High

Frequency OSC.

•

Complement to KSA733

Collector-Base Voltage : V

High Current Gain Bandwidth Product : f =300MHz (TYP)

=60V

CBO

Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)

TO-92

1. Emitter 2. Base 3. Collector

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

CBO

CEO

EBO

150

°C

Collector Power Dissipation

Junction Temperature

Storage Temperature

250

150

-55 ~ 150

°C

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

Test Condition

Min.

Typ.

Max.

Units

I =100µA, I =0

CBO

CEO

EBO

I =10mA, I =0

C B

I =10µA, I =0

=40V, I =0

0.1

700

0.3

µA

CBO

EBO

=3V, I =0

DC Current Gain

=6V, I =1.0mA

(sat)

Collector-Emitter Saturation Voltage

Current Gain Bandwidth Product

Output Capacitance

I =100mA, I =10mA

0.15

300

2.5

MHz

=6V, I =10mA

=6V, I =0, f=1MHz

Noise Figure

=6V, I =0.5mA

4.0

f=1KHz, R =500Ω

Classification

40 ~ 80

70 ~ 140

120 ~ 240

200 ~ 400

350 ~ 700

Rev. A2, September 2002

Typical Characteristics

100

V_CE= 6V

I_B= 400µA

I_B= 350µA

I_B= 300µA

I_B= 250µA

I_B= 200µA

I_B= 150µA

I_B= 100µA

I_B= 50µA

0.1

0.0

0.2

0.4

0.6

0.8

1.0

1.2

V_CE[V], COLLECTOR-EMITTER VOLTAGE

V_BE[V], BASE-EMITTER VOLTAGE

Figure 1. Static Characteristic

Figure 2. Transfer Characteristic

1000

100

I_C= 10 I_B

V_CE= 6V

V_BE(sat)

0.1

V_CE(sat)

0.01

100

1000

100

1000

I_C[mA], COLLECTOR CURRENT

Figure 3. DC current Gain

Figure 4. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

1000

100

V_CE= 6V

I_E= 0

f = 1MHz

100

0.1

100

1000

0.1

100

V_CB[V], COLLECTOR-BASE VOLTAGE

I_C[mA], COLLECTOR CURRENT

Figure 5. Output Capacitance

Figure 6. Current Gain Bandwidth Product

Rev. A2, September 2002

Package Dimensions

TO-92

+0.25

–0.15

4.58

0.46 ±0.10

+0.10

–0.05

1.27TYP

0.38

[1.27 ±0.20

]

[1.27 ±0.20]

3.60 ±0.20

(R2.29)

Dimensions in Millimeters

Rev. A2, September 2002

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not

intended to be an exhaustive list of all such trademarks.

ACEx™

FACT™

ImpliedDisconnect™ PACMAN™

SPM™

ActiveArray™

Bottomless™

CoolFET™

CROSSVOLT™ FRFET™

DOME™

FACT Quiet series™ ISOPLANAR™

POP™

Stealth™

FAST^®

LittleFET™

MicroFET™

MicroPak™

Power247™

PowerTrench^®

QFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

FASTr™

GlobalOptoisolator™ MICROWIRE™

QS™

EcoSPARK™

E²CMOS™

EnSigna™

Across the board. Around the world.™

The Power Franchise™

GTO™

HiSeC™

I²C™

MSX™

MSXPro™

OCX™

OCXPro™

OPTOLOGIC^®

OPTOPLANAR™

QT Optoelectronics™ TinyLogic™

Quiet Series™

TruTranslation™

RapidConfigure™

RapidConnect™

UHC™

UltraFET^®

SILENT SWITCHER^®VCX™

SMART START™

Programmable Active Droop™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. I1

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