KSE350芯片引脚定义引脚图及功能IC贸易商引脚图技术参数-中国IC网-芯三七

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产品型号KSE350的概述

KSE350芯片概述 KSE350是一款专为低功耗应用设计的集成电路。该芯片广泛应用于物联网设备、智能家居、可穿戴设备等领域，以其卓越的性能和较低的功耗特点，受到众多开发者的青睐。KSE350具备强大的计算能力和灵活的接口，能够满足多种应用需求，是现代电子产品中不可或缺的组成部分。 KSE350的详细参数 KSE350的参数配置非常丰富，使得其在实际应用中具备广泛的适应性。以下为该芯片的主要技术参数： - 核心架构：ARM Cortex-M4，具备高效的计算能力。 - 主频：最高主频可达100MHz。 - 存储： - Flash存储：512KB - SRAM容量：128KB - 工作电压：2.0V至3.6V - 工作温度范围：-40°C至85°C - 外设接口： - GPIO：多达40个可编程输入/输出引脚 - UART：3个串口 - SPI：2个SPI接口 -...

产品型号KSE350的Datasheet PDF文件预览

KSE350

High Voltage General Purpose Applications

•

High Collector-Emitter Breakdown Voltage

Suitable for Transformer

Complement to KSE340

TO-126

1. Emitter 2.Collector 3.Base

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

- 300

- 5

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

CBO

CEO

EBO

- 500

°C

Collector Dissipation (T =25°C)

Junction Temperature

Storage Temperature

150

- 65 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Collector-Emitter Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Test Condition

Min.

Max. Units

= - 1mA, I = 0

-300

CEO

CBO

= - 300V, I = 0

-100

240

µA

= - 3V, I = 0

EBO

= - 10V, I = - 50mA

Rev. A, February 2000

Typical Characteristics

-10

1000

100

I_C= 10I_B

V_CE= 10V

-1

V_BE(sat)

V_CE(sat)

-0.1

-0.01

-1

-10

-100

-1000

-1

-10

-100

-1000

I_C[A], COLLECTOR CURRENT

Figure 1. DC current Gain

Figure 2. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

-10000

-1000

-100

-10

100

125

150

175

-100

-1000

T_C[^oC], CASE TEMPERATURE

V_CE[V], COLLECTOR-EMITTER VOLTAGE

Figure 3. Safe Operating Area

Figure 4. Power Derating

Rev. A, February 2000

Package Demensions

TO-126

8.00 ±0.30

3.25 ±0.20

ø3.20 ±0.10

(1.00)

(0.50)

0.75 ±0.10

1.75 ±0.20

1.60 ±0.10

0.75 ±0.10

+0.10

–0.05

0.50

2.28TYP

[2.28±0.20]

2.28TYP

[2.28±0.20]

Dimensions in Millimeters

Rev. A, February 2000

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

ACEx™

HiSeC™

SuperSOT™-8

SyncFET™

TinyLogic™

UHC™

Bottomless™

CoolFET™

CROSSVOLT™

E²CMOS™

FACT™

ISOPLANAR™

MICROWIRE™

POP™

PowerTrench^®

QFET™

VCX™

FACT Quiet Series™

QS™

FAST^®

Quiet Series™

SuperSOT™-3

SuperSOT™-6

FASTr™

GTO™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

INTERNATIONAL.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. E

配单直通车

深圳市中利达电子科技有限公司服务专线: 0755-83200645/13686833545 在线联系:

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深圳市芯福林电子有限公司服务专线: 13418564337 在线联系:

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首天国际（深圳）科技有限公司服务专线: 0755-82807802/82807803 在线联系:

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KSE350产品参数

型号:	KSE350
生命周期：	Active
IHS 制造商：	ON SEMICONDUCTOR
Reach Compliance Code：	compliant
风险等级：	5.7
Is Samacsys：	N
最大集电极电流 (IC)：	0.5 A
集电极-发射极最大电压：	300 V
配置：	SINGLE
最小直流电流增益 (hFE)：	30
JEDEC-95代码：	TO-126
JESD-30 代码：	R-PSFM-T3
元件数量：	1
端子数量：	3
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT
极性/信道类型：	PNP
表面贴装：	NO
端子形式：	THROUGH-HOLE
端子位置：	SINGLE
晶体管元件材料：	SILICON
Base Number Matches：	1

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