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产品型号KSP12BU的Datasheet PDF文件预览

KSP12

Darlington Transistor

•

Collector-Emitter Voltage: V

Collector Power Dissipation: P (max)=625mW

=20V

CES

TO-92

1. Emitter 2. Base 3. Collector

NPN Epitaxial Silicon Darlington Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Collector-Emitter Voltage

Emitter-Base Voltage

CES

EBO

Collector Power Dissipation

Junction Temperature

Storage Temperature

625

°C

150

-55 ~ 150

°C

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Collector-Emitter Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

Test Condition

Min.

Typ.

Max.

Units

I =100µA, I =0

CES

CBO

=15V, I =0

100

=15V, I =0

CES

EBO

=10V, I =0

DC Current Gain

=5V, I =10mA

20K

(sat)

(on)

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

I =10mA, I =0.01mA

=5V, I =10mA

1.4

Rev. A2, September 2002

Typical Characteristics

100k

10k

I_C= 1000 I_B

V_CE= 5V

V_BE(sat)

V_CE(sat)

0.1

100

1000

100

I_C[mA], COLLECTOR CURRENT

Figure 1. DC current Gain

Figure 2. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

1000

V_CE= 5V

100

0.0

0.4

0.8

1.2

1.6

2.0

2.4

100

V_BE[V], BASE-EMITTER VOLTAGE

I_C[mA], COLLECTOR CURRENT

Figure 3. Base-Emitter On Voltage

Figure 4. Current Gain Bandwidth Product

Rev. A2, September 2002

Package Dimensions

TO-92

+0.25

–0.15

4.58

0.46 ±0.10

+0.10

–0.05

1.27TYP

0.38

[1.27 ±0.20

]

[1.27 ±0.20]

3.60 ±0.20

(R2.29)

Dimensions in Millimeters

Rev. A2, September 2002

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not

intended to be an exhaustive list of all such trademarks.

ACEx™

FACT™

ImpliedDisconnect™ PACMAN™

SPM™

ActiveArray™

Bottomless™

CoolFET™

CROSSVOLT™ FRFET™

DOME™

FACT Quiet series™ ISOPLANAR™

POP™

Stealth™

FAST^®

LittleFET™

MicroFET™

MicroPak™

Power247™

PowerTrench^®

QFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

FASTr™

GlobalOptoisolator™ MICROWIRE™

QS™

EcoSPARK™

E²CMOS™

EnSigna™

Across the board. Around the world.™

The Power Franchise™

GTO™

HiSeC™

I²C™

MSX™

MSXPro™

OCX™

OCXPro™

OPTOLOGIC^®

OPTOPLANAR™

QT Optoelectronics™ TinyLogic™

Quiet Series™

TruTranslation™

RapidConfigure™

RapidConnect™

UHC™

UltraFET^®

SILENT SWITCHER^®VCX™

SMART START™

Programmable Active Droop™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. I1

型号:	KSP12BU
是否Rohs认证：	符合
生命周期：	Obsolete
Reach Compliance Code：	unknown
HTS代码：	8541.21.00.95
风险等级：	5.53
配置：	DARLINGTON
最小直流电流增益 (hFE)：	20000
JEDEC-95代码：	TO-92
JESD-30 代码：	O-PBCY-T3
JESD-609代码：	e3
元件数量：	1
端子数量：	3
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND
封装形式：	CYLINDRICAL
峰值回流温度（摄氏度）：	NOT APPLICABLE
极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.625 W
认证状态：	Not Qualified
子类别：	Other Transistors
表面贴装：	NO
端子面层：	Matte Tin (Sn)
端子形式：	THROUGH-HOLE
端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	NOT APPLICABLE
晶体管元件材料：	SILICON
Base Number Matches：	1

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