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产品型号KST5550MTF的Datasheet PDF文件预览

KST5550

High Voltage Transistor

SOT-23

1. Base 2. Emitter 3. Collector

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

160

140

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

CBO

CEO

EBO

600

350

150

°C

Collector Power Dissipation

Storage Temperature

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Test Condition

Min.

Max.

Units

I =10µA, I =0

160

140

CBO

CEO

EBO

I =1mA, I =0

C B

I =10µA, I =0

=100V, I =0

100

CBO

EBO

Emitter Cut-off Current

=4V, I =0

DC Current Gain

=5V, I =1.0mA

=5V, I =10mA

250

=5V, I =50mA

(sat)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

Output Capacitance

I =10mA, I =1mA

0.15

0.25

I =50mA, I =5mA

I =10mA, I =1mA

1.0

1.2

I =50mA, I =5mA

I =10mA, V =10V

100

300

MHz

f=100MHz

=10V, I =0, f=1.0MHz

CB E

6.0

Marking

Rev. A2, November 2002

Typical Characteristics

1000

100

I_C= 10 I_B

V_CE= 5V

V_BE(sat)

0.1

V_CE(sat)

0.01

100

1000

100

1000

I_C[mA], COLLECTOR CURRENT

Figure 1. DC current Gain

Figure 2. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

1000

100

V_CE= 5V

f = 1MHz

I_E= 0

100

0.1

0.0

0.2

0.4

0.6

0.8

1.0

1.2

100

V_BE[V], BASE-EMITTER VOLTAGE

V_CB[V], COLLECTOR-BASE VOLTAGE

Figure 3. Base-Emitter On Voltage

Figure 4. Output Capacitance

1000

V_CE= 10V

100

1000

I_C[mA], COLLECTOR CURRENT

Figure 5. Current Gain Bandwidth Product

Rev. A2, November 2002

Package Dimensions

SOT-23

0.40 ±0.03

0.03~0.10

0.38 REF

+0.05

–0.023

0.40 ±0.03

0.12

0.96~1.14

2.90 ±0.10

0.95 ±0.03 0.95 ±0.03

1.90 ±0.03

0.508REF

Dimensions in Millimeters

Rev. A2, November 2002

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not

intended to be an exhaustive list of all such trademarks.

ACEx™

FACT™

ImpliedDisconnect™ PACMAN™

SPM™

ActiveArray™

Bottomless™

CoolFET™

CROSSVOLT™ FRFET™

DOME™

FACT Quiet series™ ISOPLANAR™

POP™

Stealth™

FAST^®

LittleFET™

MicroFET™

MicroPak™

Power247™

PowerTrench^®

QFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

FASTr™

GlobalOptoisolator™ MICROWIRE™

QS™

EcoSPARK™

E²CMOS™

EnSigna™

Across the board. Around the world.™

The Power Franchise™

GTO™

HiSeC™

I²C™

MSX™

MSXPro™

OCX™

OCXPro™

OPTOLOGIC^®

OPTOPLANAR™

QT Optoelectronics™ TinyLogic™

Quiet Series™

TruTranslation™

RapidConfigure™

RapidConnect™

UHC™

UltraFET^®

SILENT SWITCHER^®VCX™

SMART START™

Programmable Active Droop™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. I1

型号:	KST5550MTF
Brand Name：	ON Semiconductor
是否无铅：	不含铅
生命周期：	End Of Life
包装说明：	SMALL OUTLINE, R-PDSO-G3
制造商包装代码：	318BM
Reach Compliance Code：	compliant
ECCN代码：	EAR99
HTS代码：	8541.21.00.95
风险等级：	5.5
最大集电极电流 (IC)：	0.6 A
集电极-发射极最大电压：	140 V
配置：	SINGLE
最小直流电流增益 (hFE)：	20
JESD-30 代码：	R-PDSO-G3
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	1
端子数量：	3
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.35 W
认证状态：	Not Qualified
子类别：	Other Transistors
表面贴装：	YES
端子面层：	Tin (Sn)
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管元件材料：	SILICON
标称过渡频率 (fT)：	100 MHz
Base Number Matches：	1

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