SMD Type
Transistors
NPN Transistors
KTC601U
SOT-353
Unit: mm
+0.1
-0.1
1.3
0.65
■ Features
● Excellent temperature response between these 2 transistor.
● High pairing property in hFE
● The follwing characteristics are common for Q1, Q2.
.
+0.05
-0.02
+0.1
0.1
0.3
-0.1
+0.1
-0.1
2.1
5
4
1. Q BASE
1
2. Q , Q EMITTER
2
1
3. Q BASE
2
4. Q COLLECTOR
2
5. Q COLLECTOR
1
Q1
Q2
1
2
3
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Symbol
Rating
60
Unit
V
VCBO
VCEO
VEBO
50
5
Collector Current - Continuous
Base Current
I
C
150
30
mA
I
B
Collector Power Dissipation
Junction Temperature
P
C
200
150
mW
T
J
℃
Storage Temperature Range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
60
50
5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
Ic= 100 μA， I
Ic= 1 mA， I = 0
= 100μA， I
E= 0
B
I
E
C= 0
I
CBO
EBO
V
V
CB= 60 V , I
EB= 5V , I
E
= 0
0.1
0.1
0.25
1.2
400
10
uA
V
I
C
=0
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
V
CE(sat)
BE(sat)
I
I
C
=100 mA, I
B
=10mA
=10mA
V
C
=100 mA, I
B
hFE
V
V
V
V
CE= 6V, I
CE=6V, I
C
= 2 mA
=0.1mA, f=1KHz , Rg=10KΩ
= 0,f=1MHz
= 1mA
120
80
Noise Figure
NF
C
dB
pF
Collector output capacitance
Transition frequency
C
ob
T
CB= 10V, I
CE= 10V, I
E
3.5
f
C
MHz
■ Classification of hfe
Type
Range
Marking
KTC601U-Y
120-240
LY
KTC601U-G
200-400
LG
1
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