LM313H芯片引脚定义引脚图及功能IC贸易商引脚图技术参数-中国IC网-芯三七

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产品型号LM313H的概述

LM313H芯片概述 LM313H是一款由德州仪器（Texas Instruments）公司设计和生产的高性能电压比较器，广泛应用于电源监控、信号调理、转换器设计等领域。LM313H采用双极性技术，具有出色的速度和精度，特别适合于要求较高的比较和信号处理任务。其具有良好的温度稳定性和广泛的供电电压范围，能够满足各种应用的需求。详细参数 LM313H的关键性能参数包括： - 电源电压范围：3V至40V。 - 输入电压范围：可处理的输入电压范围为0V到电源电压。 - 输出电压：当负载为5kΩ至30kΩ时，输出电压可从0V到接近电源电压。 - 响应时间：在典型条件下（±15V电源电压），响应时间可达到100ns。 - 输入偏置电流：典型值为100nA，最大值为500nA。 - 输入失调电压：在温度范围内最大为2mV，保证了高精度的比较功能。 - 温度范围：工作温度范围从-55°C到+125...

产品型号LM313H的Datasheet PDF文件预览

December 1994

LM113/LM313 Reference Diode

General Description

The LM113/LM313 are temperature compensated, low volt-

Dynamic impedance of 0.3X from 500 mA to 20 mA

age reference diodes. They feature extremely-tight regula-

tion over a wide range of operating currents in addition to an

unusually-low breakdown voltage and good temperature

stability.

Temperature stability typically 1% over 55 C to 125 C

range (LM113), 0 C to 70 C (LM313)

Tight tolerance: 5%, 2% or 1%

The characteristics of this reference recommend it for use in

bias-regulation circuitry, in low-voltage power supplies or in

battery powered equipment. The fact that the breakdown

voltage is equal to a physical property of siliconÐthe ener-

gy-band gap voltageÐmakes it useful for many tempera-

ture-compensation and temperature-measurement func-

tions.

The diodes are synthesized using transistors and resistors

in a monolithic integrated circuit. As such, they have the

same low noise and long term stability as modern IC op

amps. Further, output voltage of the reference depends only

on highly-predictable properties of components in the IC; so

they can be manufactured and supplied to tight tolerances.

Features

Low breakdown voltage: 1.220V

Schematic and Connection Diagrams

Metal Can Package

Order Number

LM113H, LM113H/883,

LM113-1H, LM113-1H/883,

LM113-2H, LM113-2H/883,

or LM313H

See NS Package Number H02A

TL/H/5713–1

Typical Applications

Low Voltage Regulator

Level Detector for Photodiode

Solid tantalum.

TL/H/5713–2

1995 National Semiconductor Corporation

TL/H/5713

RRD-B30M115/Printed in U. S. A.

Absolute Maximum Ratings

65 C to 150 C

If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales

Office/Distributors for availability and specifications.

(Note 3)

Storage Temperature Range

Lead Temperature

(Soldering, 10 seconds)

300 C

Operating Temperature Range

LM113

LM313

Power Dissipation (Note 1)

Reverse Current

100 mW

50 mA

55 C to 125 C

0 C to 70 C

Forward Current

Electrical Characteristics (Note 2)

Parameter

Conditions

Min

Typ

Max

Units

Reverse Breakdown Voltage

LM113/LM313

LM113-1

1.160

1.210

1.195

1.220

1.22

1.280

1.232

1.245

1 mA

LM113-2

Reverse Breakdown Voltage

Change

20 mA

0.5 mA

6.0

1 mA

0.2

1.0

0.8

Reverse Dynamic Impedance

Forward Voltage Drop

RMS Noise Voltage

10 mA

0.25

1.0 mA

0.67

1.0

10 kHz

10 Hz

1 mA

Reverse Breakdown Voltage

Change with Current

0.5 mA

10 mA

MAX

MIN

Breakdown Voltage Temperature

Coefficient

1.0 mA

10 mA

MAX

0.01

%/ C

MIN

Note 1: For operating at elevated temperatures, the device must be derated based on a 150 C maximum junction and a thermal resistance of 80 C/W junction to

case or 440 C/W junction to ambient.

Note 2: These specifications apply for T

25 C, unless stated otherwise. At high currents, breakdown voltage should be measured with lead lengths less than (/4

inch. Kelvin contact sockets are also recommended. The diode should not be operated with shunt capacitances between 200 pF and 0.1 mF, unless isolated by at

least a 100X resistor, as it may oscillate at some currents.

Note 3: Refer to the following RETS drawings for military specifications: RETS113-1X for LM113-1, RETS113-2X for LM113-2 or RETS113X for LM113.

Typical Performance Characteristics

Temperature Drift

Reverse Dynamic Impedance

Reverse Characteristics

TL/H/5713–3

Typical Performance Characteristics (Continued)

Reverse Characteristics

Reverse Dynamic Impedance

Noise Voltage

Forward Characteristics

Response Time

Maximum Shunt Capacitance

TL/H/5713–4

Typical Applications (Continued)

Amplifier Biasing for Constant Gain with Temperature

Constant Current Source

Thermometer

*Adjust for 0V at 0 C

Adjust for 100 mV/ C

TL/H/5713–5

Physical Dimensions inches (millimeters)

Order Number LM113H, LM113H/883, LM113-1H, LM113-1H/883,

LM113-2H, LM113-2H/883 or LM313H

NS Package Number H02A

LIFE SUPPORT POLICY

NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL

SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant

into the body, or (b) support or sustain life, and whose

failure to perform, when properly used in accordance

with instructions for use provided in the labeling, can

be reasonably expected to result in a significant injury

to the user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

National Semiconductor

Corporation

National Semiconductor

Europe

National Semiconductor

Hong Kong Ltd.

National Semiconductor

Japan Ltd.

1111 West Bardin Road

Arlington, TX 76017

Tel: 1(800) 272-9959

Fax: 1(800) 737-7018

Fax:

(

49) 0-180-530 85 86

13th Floor, Straight Block,

Ocean Centre, 5 Canton Rd.

Tsimshatsui, Kowloon

Hong Kong

Tel: (852) 2737-1600

Fax: (852) 2736-9960

Tel: 81-043-299-2309

Fax: 81-043-299-2408

Email: cnjwge tevm2.nsc.com

Deutsch Tel:

English Tel:

Fran3ais Tel:

Italiano Tel:

(

49) 0-180-530 85 85

49) 0-180-532 78 32

49) 0-180-532 93 58

49) 0-180-534 16 80

National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.

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LM313H产品参数

型号:	LM313H
是否无铅：	含铅
生命周期：	Active
零件包装代码：	TO-46
包装说明：	METAL CAN, TO-46, 2 PIN
针数：	2
Reach Compliance Code：	unknown
风险等级：	5.78
模拟集成电路 - 其他类型：	TWO TERMINAL VOLTAGE REFERENCE
JESD-30 代码：	O-MBCY-W2
JESD-609代码：	e0
湿度敏感等级：	1
功能数量：	1
输出次数：	1
端子数量：	2
最高工作温度：	70 °C
最低工作温度：
最大输出电压：	1.28 V
最小输出电压：	1.16 V
标称输出电压：	1.22 V
封装主体材料：	METAL
封装形状：	ROUND
封装形式：	CYLINDRICAL
峰值回流温度（摄氏度）：	260
认证状态：	COMMERCIAL
表面贴装：	NO
技术：	BIPOLAR
温度等级：	COMMERCIAL
端子面层：	TIN LEAD
端子形式：	WIRE
端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	NOT SPECIFIED
微调/可调输出：	NO
Base Number Matches：	1

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