LM394N芯片引脚定义引脚图及功能IC贸易商引脚图技术参数-中国IC网-芯三七

December 1994

LM194/LM394 Supermatch Pair

General Description

The LM194 and LM394 are junction isolated ultra well-

matched monolithic NPN transistor pairs with an order of

magnitude improvement in matching over conventional tran-

sistor pairs. This was accomplished by advanced linear pro-

cessing and a unique new device structure.

matched transistor pair. In many cases, trimming can be

eliminated entirely, improving reliability and decreasing

costs. Additionally, the low noise and high gain make this

device attractive even where matching is not critical.

The LM194 and LM394/LM394B/LM394C are available in

an isolated header 6-lead TO-5 metal can package. The

LM394/LM394B/LM394C are available in an 8-pin plastic

dual-in-line package. The LM194 is identical to the LM394

except for tighter electrical specifications and wider temper-

ature range.

Electrical characteristics of these devices such as drift ver-

sus initial offset voltage, noise, and the exponential relation-

ship of base-emitter voltage to collector current closely ap-

proach those of a theoretical transistor. Extrinsic emitter

and base resistances are much lower than presently avail-

able pairs, either monolithic or discrete, giving extremely low

noise and theoretical operation over a wide current range.

Most parameters are guaranteed over a current range of

1 mA to 1 mA and 0V up to 40V collector-base voltage,

ensuring superior performance in nearly all applications.

Features

Y

Emitter-base voltage matched to 50 mV

Y

Offset voltage drift less than 0.1 mV/ C

§

Y

Current gain (h ) matched to 2%

FE

To guarantee long term stability of matching parameters,

internal clamp diodes have been added across the emitter-

base junction of each transistor. These prevent degradation

due to reverse biased emitter currentÐthe most common

cause of field failures in matched devices. The parasitic iso-

lation junction formed by the diodes also clamps the sub-

strate region to the most negative emitter to ensure com-

plete isolation between devices.

Y

Common-mode rejection ratio greater than 120 dB

Parameters guaranteed over 1 mA to 1 mA collector

current

Y

Extremely low noise

Superior logging characteristics compared to

conventional pairs

Y

Plug-in replacement for presently available devices

The LM194 and LM394 will provide a considerable improve-

ment in performance in most applications requiring a closely

Typical Applications

Low Cost Accurate Square Root Circuit

b

Low Cost Accurate Squaring Circuit

b

6

2

(V )

IN

e

5

e

I

10

I

10

.

10 V

OUT

0

OUT

IN

TL/H/9241–2

TL/H/9241–1

*Trim for full scale accuracy

C

1995 National Semiconductor Corporation

TL/H/9241

RRD-B30M115/Printed in U. S. A.

Absolute Maximum Ratings

g

If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales

Office/Distributors for availability and specifications.

(Note 4)

Base-Emitter Current

Power Dissipation

10 mA

500 mW

Junction Temperature

LM194

LM394/LM394B/LM394C

b

a

55 C to 125 C

§

25 C to 85 C

Collector Current

20 mA

a

§

65 C to 150 C

§

Collector-Emitter Voltage

V

MAX

b

a

Storage Temperature Range

§

Collector-Emitter Voltage

LM394C

35V

20V

Soldering Information

Metal Can Package (10 sec.)

Dual-In-Line Package (10 sec.)

Small Outline Package

Vapor Phase (60 sec.)

Infrared (15 sec.)

260 C

§

Collector-Base Voltage

LM394C

35V

20V

260 C

§

215 C

§

Collector-Substrate Voltage

LM394C

35V

20V

220 C

§

See AN-450 ‘‘Surface Mounting and their Effects on Prod-

uct Reliability’’ for other methods of soldering surface

mount devices.

Collector-Collector Voltage

LM394C

35V

20V

e

Electrical Characteristics (T

25 C)

§

J

LM194

LM394

LM394B/394C

Parameter

Conditions

Units

Min Typ Max Min Typ Max Min Typ Max

e

Current Gain (h

)

FE

V

0V to V

(Note 1)

CB

MAX

e

I

C

I

C

I

C

I

C

1 mA

350 700

350 550

300 450

200 300

300 700

250 550

200 450

150 300

225 500

200 400

150 300

100 200

e

100 mA

10 mA

1 mA

e

0V to V

Current Gain Match,

V

CB

MAX

e

(h Match)

FE

100 DI

I

C

I

C

10 mA to 1 mA

1 mA

0.5

1.0

2

0.5

1.0

4

1.0

2.0

5

%

[

] [

]

h

FE(MIN)

B

e

I

C

e

Emitter-Base Offset

Voltage

V

0

CB

e

25

10

5

100

25

10

5

150

50

10

5

200

100

50

mV

I

1 mA to 1 mA

C

Change in Emitter-Base (Note 1)

e

1 mA to 1 mA,

e

Offset Voltage vs

Collector-Base Voltage

(CMRR)

I

C

V

0V to V

CB

MAX

e

Change in Emitter-Base

Offset Voltage vs

V

CB

0V,

25

50

e

I

1 mA to 0.3 mA

C

Collector Current

e

Emitter-Base Offset

Voltage Temperature

Drift

I

10 mA to 1 mA (Note 2)

C

0.08

0.03

0.3

0.1

0.08

0.03

1.0

0.3

0.2

1.5

0.5

mV/ C

§

e

I

C2

C1

V

Trimmed to 0 at 25 C

§

0.03

mV/ C

§

OS

e

Logging Conformity

I

3 nA to 300 mA,

C

150

mV

e

V

0, (Note 3)

CB

CC

Collector-Base Leakage

V

0.05 0.25

0.05

0.1

0.5

5.0

0.05

0.1

0.5

5.0

nA

MAX

Collector-Collector

Leakage

V

0.1

2.0

e

0V,

Input Voltage Noise

I

100 mA, V

CB

C

1.8

nV/ Hz

0

e

f

100 Hz to 100 kHz

e

Collector to Emitter

Saturation Voltage

I

1 mA, I

10 mA

0.2

0.1

0.2

0.1

0.2

0.1

V

C

B

100 mA

C

B

Note 1: Collector-base voltage is swept from 0 to V

at a collector current of 1 mA, 10 mA, 100 mA, and 1 mA.

MAX

e

25 C is valid only when the ratio of I to I is adjusted to give the initial zero offset. This ratio must be held to

e

Note 2: Offset voltage drift with V

0 at T

A

§

OS

C1

C2

a

within 0.003% over the entire temperature range. Measurements taken at 25 C and temperature extremes.

§

Note 3: Logging conformity is measured by computing the best fit to a true exponential and expressing the error as a base-emitter voltage deviation.

Note 4: Refer to RETS194X drawing of military LM194H version for specifications.

2

Typical Applications (Continued)

e

1 mA to 10 nA

Fast, Accurate Logging Amplifier, V

IN

10V to 0.1 mV or I

IN

TL/H/9241–3

a

g

*1 kX ( 1%) at 25 C, 3500 ppm/ C.

§

Available from Vishay Ultronix,

Grand Junction, CO, Q81 Series.

V

IN

e b

V

OUT

log

10

V

# J

REF

Voltage Controlled Variable Gain Amplifier

TL/H/9241–4

k

*R8–R10 and D2 provide a temperature Distortion 0.1%

l

Bandwidth 1 MHz

independent gain control.

e b

G

336 V1 (dB)

100 dB gain range

3

Typical Applications (Continued)

Precision Low Drift Operational Amplifier

Common-mode range 10V

I

25 nA

BIAS

I

0.5 nA

OS

V

OS

(untrimmed) 125 mV

(DV /DT) 0.2 mV/C

OS

CMRR 120 dB

A

VOL

2,500,000

*C 200 pF for unity gain

C

30 pF for A 10

V

5 pF for A 100

V

TL/H/9241–5

0 pF for A 1000

V

High Accuracy One Quadrant Multiplier/Divider

TL/H/9241–6

(X) (Y)

e

V

; positive inputs only.

OUT

(Z)

*Typical linearity 0.1%

4

Typical Applications (Continued)

High Performance Instrumentation Amplifier

6

10

e

*Gain

R

S

TL/H/9241–7

Performance Characteristics

e

s

t

e

s

t

e

100 G

G

10,000 G

1,000 G

10

s

0.05

s

g

Linearity of Gain ( 10V Output)

0.01

0.02

%

dB

t

Common-Mode Rejection Ratio (60 Hz)

Common-Mode Rejection Ratio (1 kHz)

Power Supply Rejection Ratio

120

110

120

110

90

70

t

90

l

90

50

l

110

a

b

Supply

110

dB

l

70

50

0.3

b

Bandwidth ( 3 dB)

Slew Rate

50

kHz

0.3

s

l

0.3

2

l

V/ms

s

l

s

10 mV/ C

Offset Voltage Drift**

Common-Mode Input Resistance

Differential Input Resistance

0.25

9

0.4

9

§

9

10

9

10

l

10

X

8

l

8

l

3 x 10

6

3 x 10

12

3 x 10

70

X

nV

s

10 kHz)

Input Referred Noise (100 Hz

f

5

Hz

0

Input Bias Current

Input Offset Current

Common-Mode Range

e

75

nA

V

1.5

g

11

13

11

13

11

13

10

13

Output Swing (R

10 kX)

V

L

s

**Assumes

5 ppm/ C tracking of resistors

§

5

Typical Performance Characteristics

Small Signal Current Gain vs

Collector Current

Unity Gain Frequency (f ) vs

t

Collector Current

DC Current Gain vs Temperature

Small Signal Input

Resistance (h

vs Collector Current

Offset Voltage Drift vs Initial

Offset Voltage

Base-Emitter On Voltage vs

Collector Current

)

ie

Collector-Emitter

Saturation Voltage

vs Collector Current

Small Signal Output Conductance

vs Collector Current

Input Voltage Noise vs

Frequency

Collector to Collector

Capacitance vs Reverse

Bias Voltage

Base Current Noise

vs Frequency

Noise Figure vs

Collector Current

TL/H/9241–8

6

Typical Performance Characteristics (Continued)

Collector to Collector Capacitance

vs Collector-Substrate Voltage

Emitter-Base Capacitance vs

Reverse Bias Voltage

Collector-Base Capacitance vs

Reverse Bias Voltage

Collector-Base Leakage vs

Temperature

Collector to Collector Leakage

vs Temperature

Offset Voltage Long Term

Stability at High Temperature

TL/H/9241–9

Emitter-Base Log Conformity

TL/H/9241–10

Low Frequency Noise of Differential Pair*

TL/H/9241–11

*Unit must be in still air environment so that differential

lead temperature is held to less than 0.0003 C.

§

7

Connection Diagrams

Metal Can Package

Dual-In-Line and Small Outline Packages

TL/H/9241–12

TL/H/9241–13

Top View

Order Number LM194H/883*,

LM394H, LM394BH or LM394CH

See NS Package Number H06C

Order Number LM394N or LM394CN

See NS Package Number N08E

Ý

*Available per SMD 5962-8777701

8

Physical Dimensions inches (millimeters)

Metal Can Package (H)

Order Number LM194H/883, LM394H, LM394BH or LM394CH

NS Package Number H06C

9

Physical Dimensions inches (millimeters) (Continued)

Molded Dual-In-Line Package (N)

Order Number LM394CN or LM394N

NS Package Number N08E

LIFE SUPPORT POLICY

NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL

SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant

into the body, or (b) support or sustain life, and whose

failure to perform, when properly used in accordance

with instructions for use provided in the labeling, can

be reasonably expected to result in a significant injury

to the user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

National Semiconductor

Corporation

National Semiconductor

Europe

National Semiconductor

Hong Kong Ltd.

National Semiconductor

Japan Ltd.

a

1111 West Bardin Road

Arlington, TX 76017

Tel: 1(800) 272-9959

Fax: 1(800) 737-7018

Fax:

(

49) 0-180-530 85 86

@

13th Floor, Straight Block,

Ocean Centre, 5 Canton Rd.

Tsimshatsui, Kowloon

Hong Kong

Tel: (852) 2737-1600

Fax: (852) 2736-9960

Tel: 81-043-299-2309

Fax: 81-043-299-2408

Email: cnjwge tevm2.nsc.com

a

Deutsch Tel:

English Tel:

Fran3ais Tel:

Italiano Tel:

(

49) 0-180-530 85 85

49) 0-180-532 78 32

49) 0-180-532 93 58

49) 0-180-534 16 80

National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.

型号:	LM39500R-1.5
生命周期：	Contact Manufacturer
包装说明：	,
Reach Compliance Code：	unknown
ECCN代码：	EAR99
HTS代码：	8542.39.00.01
风险等级：	5.67
调节器类型：	FIXED POSITIVE SINGLE OUTPUT LDO REGULATOR
Base Number Matches：	1

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