欢迎访问ic37.com |
会员登录 免费注册
发布采购
所在地: 型号: 精确
  • 批量询价
  •  
  • 供应商
  • 型号
  • 数量
  • 厂商
  • 封装
  • 批号
  • 交易说明
  • 询价
  •  
  • 北京元坤伟业科技有限公司

         该会员已使用本站17年以上

  • LV51131T-TLM-E
  • 数量-
  • 厂家-
  • 封装-
  • 批号-
  • -
  • QQ:857273081QQ:857273081 复制
    QQ:1594462451QQ:1594462451 复制
  • 010-62104931、62106431、62104891、62104791 QQ:857273081QQ:1594462451
更多
  • LV51131T-TLM-E图
  • 深圳市得捷芯城科技有限公司

     该会员已使用本站11年以上
  • LV51131T-TLM-E
  • 数量423 
  • 厂家SANYO/三洋 
  • 封装NA/ 
  • 批号23+ 
  • 优势代理渠道,原装正品,可全系列订货开增值税票
  • QQ:3007977934QQ:3007977934 复制
    QQ:3007947087QQ:3007947087 复制
  • 0755-82546830 QQ:3007977934QQ:3007947087
  • LV51131T-TLM-E图
  • 集好芯城

     该会员已使用本站13年以上
  • LV51131T-TLM-E
  • 数量1068 
  • 厂家ON Semiconductor 
  • 封装 
  • 批号最新批次 
  • 原厂原装公司现货
  • QQ:3008092965QQ:3008092965 复制
    QQ:3008092965QQ:3008092965 复制
  • 0755-83239307 QQ:3008092965QQ:3008092965
  • LV51131T-TLM-E图
  • 北京中其伟业科技有限公司

     该会员已使用本站16年以上
  • LV51131T-TLM-E
  • 数量5000 
  • 厂家ON Semiconductor 
  • 封装原厂封装 
  • 批号16+ 
  • 特价,原装正品,绝对公司现货库存,原装特价!
  • QQ:2880824479QQ:2880824479 复制
  • 010-62104891 QQ:2880824479
  • LV51131T-TLM-E图
  • 北京元坤伟业科技有限公司

     该会员已使用本站17年以上
  • LV51131T-TLM-E
  • 数量5000 
  • 厂家ON Semiconductor 
  • 封装贴/插片 
  • 批号2024+ 
  • 百分百原装正品,现货库存
  • QQ:857273081QQ:857273081 复制
    QQ:1594462451QQ:1594462451 复制
  • 010-62104791 QQ:857273081QQ:1594462451
  • LV51131T-TLM-E图
  • 深圳市惊羽科技有限公司

     该会员已使用本站11年以上
  • LV51131T-TLM-E
  • 数量9328 
  • 厂家ON-安森美 
  • 封装MSOP-8 
  • 批号▉▉:2年内 
  • ▉▉¥5.2元一有问必回一有长期订货一备货HK仓库
  • QQ:43871025QQ:43871025 复制
  • 131-4700-5145---Q-微-恭-候---有-问-秒-回 QQ:43871025
  • LV51131T-TLM-E图
  • 深圳市中杰盛科技有限公司

     该会员已使用本站14年以上
  • LV51131T-TLM-E
  • 数量12000 
  • 厂家ON 
  • 封装MSOP-8 
  • 批号24+ 
  • 【原装优势★★★绝对有货】
  • QQ:409801605QQ:409801605 复制
  • 0755-22968359 QQ:409801605
  • LV51131T-TLM-E图
  • 深圳市创思克科技有限公司

     该会员已使用本站2年以上
  • LV51131T-TLM-E
  • 数量8000 
  • 厂家SANYO/三洋 
  • 封装MSOP8 
  • 批号21+ 
  • 全新原装原厂实力挺实单欢迎来撩
  • QQ:1092793871QQ:1092793871 复制
  • -0755-88910020 QQ:1092793871
  • LV51131T-TLM-E图
  • 深圳市一线半导体有限公司

     该会员已使用本站16年以上
  • LV51131T-TLM-E
  • 数量4405 
  • 厂家ON Semiconductor 
  • 封装 
  • 批号 
  • 全新原装部分现货其他订货
  • QQ:2881493920QQ:2881493920 复制
    QQ:2881493921QQ:2881493921 复制
  • 0755-88608801多线 QQ:2881493920QQ:2881493921
  • LV51131T-TLM-E图
  • 深圳市科雨电子有限公司

     该会员已使用本站9年以上
  • LV51131T-TLM-E
  • 数量2000 
  • 厂家ON 
  • 封装MSOP-8 
  • 批号21+ 
  • ★体验愉快问购元件!!就找我吧!单价:15元
  • QQ:97877807QQ:97877807 复制
  • 171-4755-1968(微信同号) QQ:97877807

产品型号LV51131T-TLM-E的Datasheet PDF文件预览

Ordering number : ENA1152B  
LV51131T  
Bi-CMOS IC  
http://onsemi.com  
2-Cell Lithium-Ion Secondary Battery  
Protection IC  
Overview  
The LV51131T series is a protection IC for 2-cell lithium-ion secondary batteries.  
Function  
Monitoring function for each cell:  
High detection voltage accuracy  
Hysteresis cancel function:  
Detects overcharge and over-discharge conditions and controls the  
charging and discharging operation of each cell.  
Over-charge detection accuracy  
±25mV  
Over-discharge detection accuracy ±100mV  
The hysteresis of over-discharge detection voltage is cancelled by  
connection of a load after overcharging has been detected.  
Discharge current monitoring function: Detects over-currents, load shorting, and excessively high voltage of a  
charger.  
Low current consumption:  
0V cell charging function:  
Normal operation mode typ. 6.0μA  
Stand by mode max. 0.2μA  
Charging is enabled even when the cell voltage is 0V by giving a voltage  
-
between the V  
DD  
pin and V pin.  
Specifications  
Absolute Maximum Ratings at Ta = 25°C  
Parameter  
Power supply voltage  
Input voltage  
Charger minus voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
-0.3 to +12  
DD  
-
V
V
-28 to V +0.3  
DD  
V
DD  
Output voltage  
Cout pin voltage  
Dout pin voltage  
Vcout  
Vdout  
Pd max  
Topr  
V
V
-28 to V +0.3  
DD  
V
V
DD  
-0.3 to V +0.3  
DD  
SS  
Allowable power dissipation  
Operating ambient temperature  
Storage temperature  
Independent IC  
170  
-30 to +85  
-40 to +125  
mW  
°C  
°C  
Tstg  
Caution 1)Absolute maximum ratings represent the values which cannot be exceeded for any length of time.  
Caution 2) Even when the device is used within the range of absolute maximum ratings, as a result of continuous usage under high temperature, high current,  
high voltage, or drastic temperature change, the reliability of the IC may be degraded.  
Please contact us for the further details.  
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating  
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.  
Recommendation Operating Conditions at Ta=25°C  
Symbol  
Conditions  
Ratings  
Unit  
V
Parameter  
Supply voltage  
V
6.0 to 8.0  
DD  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 9 of this data sheet.  
Semiconductor Components Industries, LLC, 2013  
August, 2013  
82113NK 20130806-S00002/81011HKPC/51408MSPC 20080305-S00002 No.A1152-1/10  
LV51131T  
Electrical Characteristics 1 at Ta = 25°C, unless especially specified.  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
and V  
Unit  
min  
1.5  
max  
Operation input voltage  
Vcell  
Vmin  
Vd1  
Voltage between V  
10  
V
V
V
DD  
SS  
-
0V cell charging minimum voltage  
Over-charge detection voltage  
Voltage between V -V under V -V  
DD DD SS  
=0  
1.5  
4.375  
4.385  
4.200  
4.360  
1.5  
4.325  
4.315  
4.100  
4.250  
0.5  
4.350  
4.350  
4.150  
Ta=0 to 45°C *2  
-
Over-charge release voltage  
Vr1  
V
V
V
V
Vd3  
> Vd3  
V
V
-
Over-charge detection delay time  
Over-charge release delay time  
Over-discharge detection voltage  
td1  
tr1  
-Vc=3.5V4.5V, Vc-V =3.5V  
SS  
1.0  
40.0  
2.30  
20.0  
s
DD  
-Vc=4.5V3.5V, Vc-V =3.5V  
SS  
20.0  
60.0  
ms  
V
DD  
Vd2  
Vh2  
2.20  
2.40  
Over-discharge release hysteresis  
voltage  
10.0  
40.0  
mV  
Over-discharge detection delay time  
td2  
tr2  
V
V
V
V
V
V
V
V
-Vc=3.5V2.2V, Vc-V =3.5V  
SS  
50  
0.5  
100  
1.0  
150  
1.5  
ms  
ms  
V
DD  
DD  
DD  
DD  
DD  
DD  
DD  
DD  
Over-discharge release delay time  
Over-current detection voltage  
-Vc=2.2V3.5V, Vc-V =3.5V  
SS  
Vd3  
Vh3  
td3  
-Vc=3.5V, Vc-V =3.5V  
SS  
0.130  
5.0  
0.150  
10.0  
20.0  
1.0  
0.170  
20.0  
30.0  
1.5  
Over-current release hysteresis voltage  
Over-current detection delay time  
Over-current release delay time  
Short circuit detection voltage  
-Vc=3.5V, Vc-V =3.5V  
SS  
mV  
ms  
ms  
V
-Vc=3.5V, Vc-V =3.5V  
SS  
10.0  
0.5  
tr3  
-Vc=3.5V, Vc-V =3.5V  
SS  
Vd4  
td4  
-Vc=3.5V, Vc-V =3.5V  
SS  
1.0  
1.3  
1.6  
Short circuit detection delay time  
Excessive charger detection voltage  
-Vc=3.5V, Vc-V =3.5V  
SS  
0.125  
-0.60  
0.250  
-0.45  
0.500  
-0.30  
ms  
V
Vd5  
Between V -Vc=3.5V, Vc-V =3.5V  
DD SS  
Voltage between V and V  
SS  
-
Excessive charge detection release  
hysteresis voltage  
Vh5  
V
-Vc=3.5V, Vc-V =3.5V  
SS  
25.0  
50.0  
100.0  
mV  
V
DD  
Stand-by release voltage  
Vstb  
V
-Vc=2.0V, Vc-V =2.0V  
SS  
V
×0.4  
V
×0.5  
V ×0.6  
DD  
DD  
DD  
DD  
-
Voltage between V and V  
SS  
Excessive charger detection delay time  
Excessive charger release delay time  
td5  
tr5  
V
-Vc=3.5V, Vc-V =3.5V *1  
SS  
0.5  
0.5  
100  
15  
1.5  
1.5  
200  
30  
3.0  
3.0  
400  
60  
ms  
ms  
kΩ  
kΩ  
V
DD  
V
-Vc=3.5V, Vc-V =3.5V  
SS  
DD  
Internal resistance (VM-V  
Internal resistance (VM-V  
Cout Nch ON voltage  
Cout Pch ON voltage  
Dout Nch ON voltage  
Dout Pch ON voltage  
Vc input current  
)
R
After over-discharge is detected.  
After over-current or short-circuit is detected.  
DD  
DD  
)
R
SS  
SS  
L1  
V
I
I
I
I
L=50μA, V -Vc=4.4V, Vc-V =4.4V  
DD SS  
0.5  
O
O
O
O
O
V
H1  
L=50μA, V -Vc=3.9V, Vc-V =3.9V  
DD SS  
V
-0.5  
V
O
DD  
V
L2  
L=50μA, V -Vc=2.2V, Vc-V =2.2V  
DD SS  
0.5  
V
O
V
H2  
L=50μA, V -Vc=3.9V, Vc-V =3.9V  
DD SS  
V
-0.5  
V
O
DD  
Ivc  
V
V
V
V
-Vc=3.5V, Vc-V =3.5V  
SS  
0.0  
6.0  
1.0  
13.0  
0.2  
μA  
μA  
μA  
V
DD  
DD  
DD  
DD  
Current consumption  
Stand-by current  
I
-Vc=3.5V, Vc-V =3.5V  
SS  
DD  
Istb  
-Vc=2.2V, Vc-V =3.5V  
SS  
T-terminal input ON voltage  
Vtest  
-Vc=3.5V, Vc-V =3.5V  
SS  
V
×0.4  
DD  
V
×0.5  
V
×0.6  
DD  
DD  
*1 Under over-discharge state, delay operation starts after release of over-discharge.  
*2 The Ratings of the table above is a design targets and are not measured.  
No.A1152-2/10  
LV51131T  
Electrical Characteristics 2 at Ta = -20-60°C , unless especially specified.  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
1.65  
max  
Operation input voltage  
Vcell  
Vmin  
Vd1  
Voltage between V  
and V  
10  
V
V
V
V
DD  
SS  
-
0V cell charging minimum voltage  
Over-charge detection voltage  
Over-charge release voltage  
Voltage between V -V under V -V  
DD DD SS  
=0  
1.65  
4.390  
4.215  
4.305  
4.080  
4.350  
4.150  
-
-
Vr1  
V
Vd3  
> Vd3  
V
V
4.235  
0.35  
4.375  
2.40  
V
s
Over-charge detection delay time  
Over-charge release delay time  
Over-discharge detection voltage  
td1  
tr1  
-Vc=3.5V4.5V, Vc-V =3.5V  
SS  
1.0  
40.0  
2.30  
20.0  
DD  
DD  
V
-Vc=4.5V3.5V, Vc-V =3.5V  
SS  
14.0  
2.18  
8.0  
96.0  
2.42  
42.0  
ms  
V
Vd2  
Vh2  
Over-discharge release hysteresis  
voltage  
mV  
Over-discharge detection delay time  
td2  
tr2  
V
V
V
V
V
V
V
V
V
-Vc=3.5V2.2V, Vc-V =3.5V  
SS  
35  
0.35  
0.120  
3.5  
100  
1.0  
240  
2.4  
ms  
ms  
V
DD  
DD  
DD  
DD  
DD  
DD  
DD  
DD  
DD  
Over-discharge release delay time  
Over-current detection voltage  
-Vc=2.2V3.5V, Vc-V =3.5V  
SS  
Vd3  
Vh3  
td3  
-Vc=3.5V, Vc-V =3.5V  
SS  
0.150  
10.0  
20.0  
1.0  
0.180  
23.0  
48.0  
2.40  
1.7  
Over-current release hysteresis voltage  
Over-current detection delay time  
Over-current release delay time  
Short circuit detection voltage  
-Vc=3.5V, Vc-V =3.5V  
SS  
mV  
ms  
ms  
V
-Vc=3.5V, Vc-V =3.5V  
SS  
7.0  
tr3  
-Vc=3.5V, Vc-V =3.5V  
SS  
0.35  
0.9  
Vd4  
td4  
-Vc=3.5V, Vc-V =3.5V  
SS  
1.3  
Short circuit detection delay time  
Excessive charger detection voltage  
-Vc=3.5V, Vc-V =3.5V  
SS  
0.049  
-0.70  
0.250  
-0.45  
0.800  
-0.20  
ms  
V
Vd5  
-Vc=3.5V, Vc-V =3.5V  
SS  
-
Voltage between V and V  
SS  
Excessive charge detection release  
hysteresis voltage  
Vh5  
V
-Vc=3.5V, Vc-V =3.5V  
SS  
21.0  
50.0  
112.0  
mV  
DD  
DD  
Stand-by release voltage  
Vstb  
td5  
V
-Vc=2.0V, Vc-V =2.0V  
SS  
V
×0.4  
V
×0.5  
V ×0.6  
DD  
V
DD  
DD  
-
Voltage between V and V  
SS  
Excessive charger detection delay time  
V
-Vc=3.5V, Vc-V =3.5V *1  
0.35  
1.5  
4.8  
ms  
DD  
SS  
Excessive charger release delay time  
tr5  
V
-Vc=3.5V, Vc-V =3.5V  
SS  
0.35  
70  
1.5  
200  
30  
4.8  
520  
78  
ms  
kΩ  
kΩ  
V
DD  
Internal resistance (VM-V  
Internal resistance (VM-V  
Cout Nch ON voltage  
Cout Pch ON voltage  
Dout Nch ON voltage  
Dout Pch ON voltage  
Vc input current  
)
R
After over-discharge is detected.  
After over-current or short-circuit is detected.  
DD  
DD  
)
R
10.5  
SS  
SS  
L1  
V
I
I
I
I
L=50μA, V -Vc=4.4V, Vc-V =4.4V  
DD SS  
0.5  
O
O
O
O
O
V
H1  
L=50μA, V -Vc=3.9V, Vc-V =3.9V  
DD SS  
V
-0.5  
-0.5  
V
O
DD  
V
L2  
L=50μA, V -Vc=2.2V, Vc-V =2.2V  
DD SS  
0.5  
V
O
V
H2  
L=50μA, V -Vc=3.9V, Vc-V =3.9V  
DD SS  
V
V
O
DD  
Ivc  
V
V
V
V
-Vc=3.5V, Vc-V =3.5V  
SS  
0.0  
6.0  
1.0  
16.9  
0.2  
μA  
μA  
μA  
V
DD  
DD  
DD  
DD  
Current consumption  
Stand-by current  
I
-Vc=3.5V, Vc-V =3.5V  
SS  
DD  
Istb  
-Vc=2.2V, Vc-V =3.5V  
SS  
T-terminal input ON voltage  
Vtest  
-Vc=3.5V, Vc-V =3.5V  
SS  
V
×0.4  
DD  
V
×0.5  
V
×0.6  
DD  
DD  
*
The Ratings of the table above is a design targets and are not measured.  
*1 Under over-discharge state, delay operation starts after release of over-discharge.  
No.A1152-3/10  
LV51131T  
Package Dimensions  
unit : mm (typ)  
3245B  
Pd max -- Ta  
200  
3.0  
Independent IC  
170  
150  
8
100  
50  
0
68  
1
2
(0.53)  
0.65  
0.25  
0.125  
-30 -20  
0
20  
40  
60  
80  
100  
Ambient temperature, Ta -- °C  
MSOP8(150mil)  
Pin Assignment  
Dout  
T
7
Vc Sense  
8
6
5
1
2
3
4
Top view  
-
V
Cout  
V
V
SS  
DD  
Pin Functions  
Pin No.  
Symbol  
Description  
1
2
3
4
5
6
7
8
V
V
pin  
DD  
DD  
Cout  
Overcharge detection output pin  
Charger minus voltage input pin  
-
V
V
V
pin  
SS  
SS  
Sense pin  
Intermediate between both cell voltage input pin  
Sense  
Vc  
T
Pin to shorten detection time (“H”:Shortening mode, “L” or “Open”:Normal mode)  
Overdischarge detection output pin  
Dout  
No.A1152-4/10  
LV51131T  
Block Diagram  
Sence  
5
V
DD  
1
Level shift  
+
-
td5,tr5  
+
-
2 Cout  
8 Dout  
+
-
td1,tr1  
Delay  
control  
logic  
Vc 6  
+
-
td2,tr2  
+
-
+
-
td3,tr3  
+
-
td4  
4
3
7
-
V
V
T
SS  
No.A1152-5/10  
LV51131T  
Functional Description  
Over-charge detection  
If either of the cell voltage is equal to or more than the over-charge detection voltage, stop further charging by turning  
“L” the Cout pin and turning off external Nch MOS FET after the over-charge detection delay time.  
This delay time is set by the internal counter.  
The over-charge detection comparator has the hysteresis function. Note that this hysteresis can be cancelled by  
connecting the load after detection of over-charge detection. and it becomes small hysteresis comparator has its own.  
Once over-charge detection is made, over-current detection is not made to prevent incorrect operations. Note that  
short-circuit can be detected.  
Over-charge release  
If both cell voltages become equal to or less than the over-charge release voltage when VM voltage is equal to or less  
than Vd3, or when VM voltage is more than Vd3 with load connected, the Cout pin returns to “H” after the over-charge  
release delay time set by the internal counter.  
When VM voltage is more than Vd3 with load connected and either cell or both cell voltages are equal to or more than  
the over-charge release voltage, the Cout pin does not return to “H”. But the load current flows through the parasitic  
diode of external Nch MOS FET on Cout, consequently each cell voltage becomes equal to or less than over-charge  
release voltage, the Cout pin returns to “H.” after the over-charge release delay time.  
However, excessive voltage charger is connected as mentioned below, Cout pin does not return to “H” because  
excessive charger detection starts after over-charge release operation.  
Over-discharge detection  
When either cell voltage is equal to or less than over-discharge voltage, the IC stops further discharging by turning the  
Dout pin “L” and turning off external Nch MOS FET after the over-charge detection delay time.  
The IC goes into stand-by mode after detecting over-discharge and its consumption current is kept at about 0A. After  
-
over-discharge detection, the V pin will be connected to V  
pin via internal resistor (typ 200k).  
DD  
Over-discharge release  
-
Release from over-discharge is made by only connecting charger. If the V pin voltage becomes equal to or lower than  
the stand-by release voltage by connecting charger after detecting over-discharge, The IC is released from the stand-by  
state to start cell voltage monitoring. If both cell voltages become equal to or more than the over-discharge detection  
voltage by charging, the Dout pin returns to “H” after the over-discharge release delay time set by the internal counter.  
Over-current detection  
-
When excessive current flows through the battery, the V pin voltage rises by the ON resister of external MOS FET and  
becomes equal to or more than the over-current detection voltage, the Dout pin turns to “L” after the over-current  
detection delay time and the external Nch MOS FET is turned off to prevent excessive current in the circuit. The  
-
detection delay time is set by the internal counter. After detection, the V pin will be connected to V via internal  
SS  
resistor (typ. 30k). It will not go into stand-by mode after detecting over-current.  
Short circuit detection  
-
If greater discharging current flows through the battery and the V pin voltage becomes equal to or more than the  
short-circuit detection voltage, it will go into short-circuit detection state after the short circuit delay time shorter than  
the over-current detection delay time. When short-circuit is detected, just like the time of over-current detection, the  
-
Dout pin turns to “L” and external Nch MOS FET is turned off to prevent high current in the circuit. The V pin will be  
connected to V after detection via internal resistor (typ. 30k). It will not go into stand-by mode after detecting short  
SS  
circuit.  
Over-current/short-detection release  
-
After detecting over-current or short circuit, the internal resistor (typ. 30k) between V pin and V pin becomes  
SS  
effective. If the load resistor is removed, the V pin voltage will be pulled down to the V level. Thereafter, the IC will  
be released from the over-current/short-circuit detection state when the V pin voltage becomes equal to or less than the  
-
SS  
-
over-current detection voltage, and the Dout pin returns to “H” after over-current release delay time set by the internal  
counter.  
No.A1152-6/10  
LV51131T  
Excessive charger detection/release  
-
If the voltage between V pin and V pin becomes equal to or less than the excessive charger detection voltage by  
SS  
connecting a charger, no charging can be made by turning the Cout pin “L” after delay time and turning off the external  
Nch MOS FET. If that voltage returns to equal to or more than the excessive charger detection voltage during detection  
-
delay time, the excessive charger detection will be stopped. If the voltage between V pin and V pin becomes equal  
SS  
to or more than the excessive charger detection voltage after excessive charger detection, the Cout returns to “H” after  
delay time. The detection/return delay time is set internally.  
If Dout pin is “L”, charging will be made through the parasitic diode of external Nch FET on Dout pin. In that case, the  
-
voltage between V pin and V pin is nearly -Vf which is less than the excessive-charger detection voltage, therefore  
SS  
no excessive charger detection will be made during over-discharge, over-current and short-circuit detection.  
Furthermore, if excessive voltage charger is connected to the over-discharged battery, no excessive charger detection is  
made while the Dout pin is “L”. But the battery is continued charging through the parasitic diode. If the battery voltage  
-
rises to the over-discharge detection voltage and the voltage between V pin and V pin remains equal to or less than  
SS  
the excessive charger detection voltage, the delay operation will be started after Dout pin turns to “H.”  
0V cell charging operation  
If voltage between V  
and V becomes equal to or more than the 0V cell charging lowest operation voltage when the  
DD  
cell voltage is 0V, the Cout pin turns to “H” and charging is enabled.  
Shorten the test time  
By turning T pin to the V  
, the delay times set by the internal counter can be cut. If T pin is “open”, “L” the delay  
DD  
times are normal. Delay time not set by the counter just like as short circuit detection delay cannot be controlled by this  
pin.  
In some circuit-board layout, an excessive current at the load short might cause this IC be in miss operation like as in  
standby mode due to V line impedance. Therefore we recommend that the T pin is connected to the V pin.  
SS  
SS  
Operation in case of detection overlap  
Operation in case of  
detection overlap  
Overlap state  
State after detection  
When over-charge state is made first, V is  
-
During over-charge  
Over-discharge  
Over-charge detection is prioritized. If over-  
detection  
detection is made  
discharge state continues even after over-charge released. When over-discharge is detected after  
detection, over-discharge detection is resumed.  
over-charge state is made, the IC does not go  
-
into the stand-by mode. Note that V is connected  
to V  
DD  
via 200k.  
-
(*2) When over-current state is made first, V is  
Over-current detection (*1) Both detections’ can be made in parallel.  
is made Over-charge detection continues even when the  
connected to V  
SS  
via 30k. When over-charge  
-
over-current state is made first. If the over-charge state is made first, V is released.  
state is made first, over-current detection is  
interrupted.  
During over-discharge  
detection  
Over-charge detection Over-discharge detection is interrupted and  
The IC does not go into the stand-by mode when  
is made  
over-charge detection is preferred. When  
over-discharge state continues even after  
over-charge state is made, over-discharge  
detection is resumed.  
over-discharge state is made after over-charge  
-
detection. Note that V is connected to V  
via  
DD  
200k.  
-
Over-current detection (*3) Both detections can be made in parallel.  
(*4) If over-current state is made first, V will be  
is made  
Over-discharge detection continues even when  
the over-current state is made first. But  
over-current detection is interrupted when the  
over-discharge state is made first.  
connected to V  
SS  
detection is made next, V will be disconnected  
via 30k. If over-discharge  
-
from V  
SS  
and connected to V  
via 200kto  
DD  
get into stand-by mode. If over-discharge state is  
-
made first, V will be connected to V  
via  
DD  
200kto get into standby modw.  
During over-current  
detection  
Over-charge detection (*1)  
is made  
(*2)  
Over-discharge  
(*3)  
(*4)  
detection is made  
(Note) Short-circuit detection can be made independently.  
Excessive charger detection cannot be made during over-discharge, over-current and short-circuit detection.  
And its delay time starts after the Dout pin returns to “H”.  
No.A1152-7/10  
LV51131T  
Timing Chart  
[Cout Output System]  
Hysteresis cancellation  
by load connection  
Charger  
connection  
Charger  
connection  
Load  
connection  
Load  
Charger  
Over-charger  
connection  
Load  
connection  
connection connection  
Vd1  
Vr1  
Charging recovery  
depends on charger voltage  
when connecting charger.  
V
DD  
Vd2  
V
DD  
Discharging via FETparasite Di  
Discharging via FETparasite Di  
Vd4  
Vd3  
SS  
Vd5  
-
V
V
V
V
DD  
-
tr1  
td1  
tr1  
td5  
tr5  
td1  
Cout  
Over-charge detection state  
Over-charge detection state  
Over-charger detection state  
[Dout Output System]  
Load  
connection  
Charger  
connection  
Load  
connection  
Load  
connection  
Load  
connection  
Over-charger  
connection  
Over-current  
occurrence  
Load short-circuit  
occurrence  
Vd1  
Vr1  
V
DD  
Vd2  
To standby  
To standby  
V
DD  
Vd4  
-
Vd3  
SS  
Vd5  
V
V
Charging via FETparasite Di  
V
V
DD  
SS  
Dout  
tr3  
td2  
tr2  
tr2  
tr3  
td4  
td2  
td3  
Over-discharge detection state  
Over-current detection state  
Short-circuit detection state  
V
V
DD  
-
Over-charger detection  
Cout  
upon charging over-discharged  
battery is activated after return  
from over-charge.  
td5  
No.A1152-8/10  
LV51131T  
Application Circuit Example  
+
R1  
R2  
R4  
Sense  
V
C3  
V
DD  
C1  
C2  
T
SS  
Vc  
LV51131T  
-
V
V
Dout Cout  
SS  
R3  
Components  
R1, R2  
R3  
Recommended value  
max  
unit  
100  
2k  
500  
4k  
Ω
Ω
Ω
F
R4  
100  
0.1μ  
500  
1μ  
C1, C2, C3  
* These numbers don't mean to guarantee the characteristic of the IC.  
* In addition to the components in the upper diagram, it is necessary to insert a capacitor with enough capacity between  
and V of the IC as near as possible to stabilize the power supply voltage to the IC.  
V
DD  
SS  
* It is advisable to connect the T pin with the V pin. There is no problem even if the T pin is left open.  
SS  
ORDERING INFORMATION  
Device  
LV51131T-TLM-E  
LV51131T-TRM-E  
Package  
MSOP8 (150mil)  
(Pb-Free / Halogen Free)  
Shipping (Qty / Packing)  
2000 / Tape & Reel  
MSOP8 (150mil)  
(Pb-Free / Halogen Free)  
2000 / Tape & Reel  
No.A1152-9/10  
LV51131T  
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number  
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at  
www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no  
warranty, representation or guarantee regarding the suitabilityof its products for any particular purpose, nor does SCILLC assume any liability arising out of the  
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental  
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual  
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical  
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use  
as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in  
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for  
any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors  
harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or  
death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the  
part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PS No.A1152-10/10  
配单直通车
LV51131T-TLM-E产品参数
型号:LV51131T-TLM-E
Brand Name:ON Semiconductor
是否无铅:不含铅
是否Rohs认证:符合
生命周期:Not Recommended
IHS 制造商:ON SEMICONDUCTOR
包装说明:TSSOP, TSSOP8,.19
针数:8
制造商包装代码:846AF
Reach Compliance Code:compliant
ECCN代码:EAR99
HTS代码:8542.39.00.01
Factory Lead Time:15 weeks
风险等级:5.71
Is Samacsys:N
可调阈值:NO
模拟集成电路 - 其他类型:POWER SUPPLY SUPPORT CIRCUIT
JESD-30 代码:S-PDSO-G8
JESD-609代码:e6
长度:3 mm
湿度敏感等级:3
信道数量:1
功能数量:1
端子数量:8
最高工作温度:85 °C
最低工作温度:-30 °C
封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP
封装等效代码:TSSOP8,.19
封装形状:SQUARE
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
电源:6/8 V
认证状态:Not Qualified
座面最大高度:1.1 mm
子类别:Power Management Circuits
最大供电电流 (Isup):0.0169 mA
最大供电电压 (Vsup):8 V
最小供电电压 (Vsup):6 V
表面贴装:YES
技术:BICMOS
温度等级:OTHER
端子面层:Tin/Bismuth (Sn/Bi)
端子形式:GULL WING
端子节距:0.65 mm
端子位置:DUAL
宽度:3 mm
Base Number Matches:1
  •  
  • 供货商
  • 型号 *
  • 数量*
  • 厂商
  • 封装
  • 批号
  • 交易说明
  • 询价
批量询价选中的记录已选中0条,每次最多15条。
 复制成功!