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产品型号MAC4DCM的Datasheet PDF文件预览

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SEMICONDUCTOR TECHNICAL DATA

Silicon Bidirectional Thyristors

Motorola Preferred Devices

Designed for high volume, low cost, industrial and consumer applications

such as motor control; process control; temperature, light and speed control.

•

Small Size Surface Mount DPAK Package

Passivated Die for Reliability and Uniformity

Blocking Voltage to 800 V

TRIACS

4.0 AMPERES RMS

600 thru 800 VOLTS

MT2

MT1

On–State Current Rating of 4.0 Amperes RMS at 108°C

High Immunity to dv/dt — 500 V/ s at 125°C

High Immunity to di/dt — 6.0 A/ms at 125°C

MT2

ORDERING INFORMATION

•

To Obtain “DPAK” in Surface Mount Leadform (Case 369A)

Shipped in Sleeves — No Suffix, i.e. MAC4DCN

Shipped in 16 mm Tape and Reel — Add “T4” Suffix to Device Number,

i.e. MAC4DCNT4

MT1

MT2

CASE 369A–13

STYLE 6

•

To Obtain “DPAK” in Straight Lead Version (Case 369) Shipped in Sleeves —

Add “–1” Suffix to Device Number, i.e. MAC4DCN–1

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

(1)

Peak Repetitive Off–State Voltage

DRM

Volts

(T = –40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open)

MAC4DCM

MAC4DCN

600

800

On–State RMS Current

(Full Cycle Sine Wave, 60 Hz, T = 108°C)

T(RMS)

Amps

4.0

Peak Non–Repetitive Surge Current

TSM

(One Full Cycle, 60 Hz, T = 125°C)

I t

Circuit Fusing Consideration (t = 8.3 msec)

6.6

A sec

Peak Gate Power

(Pulse Width ≤ 10 sec, T = 108°C)

Watts

0.5

Average Gate Power

G(AV)

(t = 8.3 msec, T = 108°C)

0.1

0.5

Peak Gate Current (Pulse Width ≤ 10 sec, T = 108°C)

Amps

Volts

°C

Peak Gate Voltage (Pulse Width ≤ 10 sec, T = 108°C)

5.0

Operating Junction Temperature Range

Storage Temperature Range

THERMAL CHARACTERISTICS

Characteristic

–40 to 125

–40 to 150

stg

Symbol

Max

Unit

Thermal Resistance — Junction to Case

Thermal Resistance — Junction to Ambient

3.5

°C/W

(2)

Thermal Resistance — Junction to Ambient

Maximum Lead Temperature for Soldering Purposes

(1) V

(3)

260

°C

for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be

DRM

applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the

voltage ratings of the device are exceeded.

(2) Surface mounted on minimum recommended pad size.

(3) 1/8″ from case for 10 seconds.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Thyristor Device Data

Motorola, Inc. 1997

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristics

Symbol

Min

Typ

Max

Unit

Peak Repetitive Blocking Current

DRM

(V = Rated V , Gate Open)

DRM

T = 25°C

T = 125°C

—

0.01

2.0

(1)

Peak On–State Voltage

(I = ±6.0 A)

Volts

—

1.3

1.6

Gate Trigger Current (Continuous dc) (V = 12 V, R = 100

)

MT2(+), G(+)

MT2(+), G(–)

MT2(–), G(–)

8.0

Gate Trigger Voltage (Continuous dc) (V = 12 V, R = 100

Volts

MT2(+), G(+)

MT2(+), G(–)

MT2(–), G(–)

0.5

0.2

0.8

0.4

1.3

—

MT2(+), G(+); MT2(+), G(–); MT2(–), G(–)

T = 125°C

Holding Current

(V = 12 V, Gate Open, I = ±200 mA)

6.0

Latching Current (V = 12 V, I = 35 mA)

MT2(+), G(+)

MT2(+), G(–)

MT2(–), G(–)

—

DYNAMIC CHARACTERISTICS

Characteristics

(1)

Symbol

Min

Typ

Max

Unit

Rate of Change of Commutating Current

(V = 400 V, I = 4.0 A, Commutating dv/dt = 18 V/ sec, Gate Open,

di/dt(c)

A/ms

6.0

8.4

—

T = 125°C, f = 250 Hz, CL = 5.0 F, LL = 20 mH, No Snubber)

See Figure 15

Critical Rate of Rise of Off–State Voltage

dv/dt

V/ s

(V = 0.67 X Rated V

, Exponential Waveform,

DRM

500

1700

—

Gate Open, T = 125°C)

(1) Pulse test: Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%.

Motorola Thyristor Device Data

125

120

6.0

5.0

4.0

3.0

2.0

180

120

= 30

60°

90°

= CONDUCTION ANGLE

115

110

105

60°

= 30

120

= CONDUCTION ANGLE

1.0

180°

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

1.0

2.0

3.0

4.0

, RMS ON–STATE CURRENT (AMPS)

T(RMS)

Figure 1. RMS Current Derating

Figure 2. On–State Power Dissipation

100

1.0

TYPICAL @ T = 25°C

MAXIMUM @ T = 125°C

0.1

MAXIMUM @ T = 25

°C

= R

r(t)

JC(t)

1000

1.0

0.1

0.01

1.0

2.0

3.0

4.0

5.0

0.1

1.0

100

10 k

V , INSTANTANEOUS ON–STATE VOLTAGE (VOLTS)

t, TIME (ms)

Figure 3. On–State Characteristics

Figure 4. Transient Thermal Response

1.2

1.0

0.8

0.6

0.4

0.2

–50

–25

100

125

–50

–25

100

125

T , JUNCTION TEMPERATURE (

Figure 5. Typical Gate Trigger Current versus

Junction Temperature

Figure 6. Typical Gate Trigger Voltage versus

Junction Temperature

Motorola Thyristor Device Data

120

100

MT2 POSITIVE

MT2 NEGATIVE

–50

–25

100

125

–50

–25

100

125

T , JUNCTION TEMPERATURE (

Figure 7. Typical Holding Current versus

Junction Temperature

Figure 8. Typical Latching Current versus

Junction Temperature

15 K

10 K

8.0 K

6.0 K

4.0 K

= 125°C

= 400 V

600 V

800 V

= 400 V

600 V

800 V

5.0 K

2.0 K

100

1000

, GATE–MT1 RESISTANCE (OHMS)

10 K

100

1000

, GATE–MT1 RESISTANCE (OHMS)

10 K

Figure 9. Exponential Static dv/dt versus

Gate–MT1 Resistance, MT2(+)

Figure 10. Exponential Static dv/dt versus

Gate–MT1 Resistance, MT2(–)

14 K

12 K

10 K

8.0 K

6.0 K

4.0 K

10 K

8.0 K

6.0 K

4.0 K

= 100°C

GATE OPEN

= 100°C

110°C

125°C

2.0 K

400

500

600

700

800

400

500

600

700

800

, PEAK VOLTAGE (VOLTS)

V , PEAK VOLTAGE (VOLTS)

Figure 11. Exponential Static dv/dt versus

Peak Voltage, MT2(+)

Figure 12. Exponential Static dv/dt versus

Peak Voltage, MT2(–)

Motorola Thyristor Device Data

10 K

8.0 K

6.0 K

4.0 K

14 K

12 K

10 K

8.0 K

6.0 K

4.0 K

GATE OPEN

= 400 V

600 V

800 V

2.0 K

100

105

110

115

120

125

100

105

110

115

120

125

T , JUNCTION TEMPERATURE (

°C)

T , JUNCTION TEMPERATURE (°C)

Figure 13. Typical Exponential Static dv/dt

versus Junction Temperature, MT2(+)

Figure 14. Typical Exponential Static dv/dt

versus Junction Temperature, MT2(–)

100

= 400 V

= 125°C

75°C

100°C

f =

2 t

6f I

1000

(di/dt)

DRM

1.0

5.0

di/dt(c), RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)

Figure 15. Critical Rate of Rise of

Commutating Voltage

Motorola Thyristor Device Data

1N4007

200 V

RMS

ADJUST FOR

, 60 Hz V

MEASURE

CHARGE

CONTROL

–

TRIGGER

400 V

CHARGE

1N914

NON-POLAR

Note: Component values are for verification of rated (dv/dt) . See AN1048 for additional information.

Figure 16. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage

Motorola Thyristor Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

SEATING

PLANE

–T–

2. CONTROLLING DIMENSION: INCH.

INCHES

MILLIMETERS

DIM

MIN

MAX

0.250

0.265

0.094

0.035

0.040

0.047

MIN

5.97

6.35

2.19

0.69

0.84

0.94

MAX

6.35

6.73

2.38

0.88

1.01

1.19

0.235

0.250

0.086

0.027

0.033

0.037

0.180 BSC

4.58 BSC

0.034

0.018

0.102

0.040

0.023

0.114

0.87

0.46

2.60

1.01

0.58

2.89

0.090 BSC

2.29 BSC

0.175

0.020

0.030

0.138

0.215

0.050

–––

0.050

–––

4.45

0.51

0.77

3.51

5.46

1.27

–––

1.27

–––

D 2 PL

0.13 (0.005)

STYLE 6:

PIN 1. MT1

2. MT2

3. GATE

4. MT2

CASE 369A–13

ISSUE Y

Motorola Thyristor Device Data

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and

specificallydisclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola

datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”

must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of

others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other

applicationsintended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury

ordeathmayoccur. ShouldBuyerpurchaseoruseMotorolaproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdMotorola

and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees

arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that

Motorola was negligent regarding the design or manufacture of the part. Motorola and

Opportunity/Affirmative Action Employer.

are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal

Mfax is a trademark of Motorola, Inc.

How to reach us:

USA/EUROPE/Locations Not Listed: Motorola Literature Distribution;

P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447

JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1,

Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488

Mfax : RMFAX0@email.sps.mot.com – TOUCHTONE 602–244–6609

ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

– US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

INTERNET: http://motorola.com/sps

Motorola Thyristor Device Data

MAC4DCM/D

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MAC4DCM产品参数

型号:	MAC4DCM
是否Rohs认证：	不符合
生命周期：	Obsolete
IHS 制造商：	MOTOROLA INC
包装说明：	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code：	unknown
HTS代码：	8541.30.00.80
风险等级：	5.31
外壳连接：	MAIN TERMINAL 2
配置：	SINGLE
JESD-30 代码：	R-PSSO-G2
JESD-609代码：	e0
元件数量：	1
端子数量：	2
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED
认证状态：	Not Qualified
最大均方根通态电流：	4 A
断态重复峰值电压：	600 V
表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)
端子形式：	GULL WING
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED
触发设备类型：	TRIAC

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