MBR1050现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

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产品型号MBR1050的概述

MBR1050 芯片概述 MBR1050 是一款广泛应用于电源管理和整流领域的二极管芯片，特别是适用于高效率的电气设备中。其名称中的“MBR”表示其类型为肖特基二极管，具备最小的正向压降和较高的开关频率特性，使其在各种应用中表现出色。MBR1050 的主要应用领域包括开关电源、DC-DC 转换器以及逆变器等。 MBR1050 的详细参数 MBR1050 的关键参数包括： - 最大重复反向电压（V_RRM）: 50V - 最大正向电流（I_F）: 10A - 正向导通压降（V_F）: 0.45V（@ I_F = 10A） - 反向恢复时间（t_rr）: 典型值为50ns - 工作温度范围: -55 °C 至 +150 °C - 封装类型: DO-214AA（常见于合金焊接封装）该芯片设计为提供高电流处理能力与低导通损耗，这使得 MBR1050 在热管理和整体效率上表现良好，有助于在有限...

产品型号MBR1050的Datasheet PDF文件预览

MBR1035 - MBR1060

.412(10.5)

.185(4.70)

.175(4.44)

DIA

Features

MAX

.154(3.91)

.148(3.74)

.055(1.40)

.045(1.14)

• Low power loss, high efficiency.

• High surge capacity.

• For use in low voltage, high frequency

inverters, free wheeling, and polarity

protection applications.

.113(2.87)

.103(2.62)

.27(6.86)

.23(5.84)

.594(15.1)

.587(14.91)

Dimensions

are in:

inches (mm)

.16(4.06)

.14(3.56)

• Metal silicon junction, majority carrier

conduction.

.11(2.79)

.10(2.54)

.56(14.22)

.53(13.46)

• High current capacity, low forward

voltage drop.

.037(0.94)

.027(0.68)

• Guard ring for over voltage protection.

TO-220AC

PIN 1 +

.205(5.20)

.195(4.95)

.025(0.64)

.014(0.35)

CASE

PIN 2 -

CASE Positive

10 Ampere Schottky Barrier Rectifiers

Absolute Maximum Ratings*

T_A= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

I_O

i_{f(repetitive)}

Average Rectified Current

Peak Repetitive Forward Current

(Rated V_R, Square Wave, 20 KHz) @ T_A= 135°C

Peak Forward Surge Current

i_f(surge)

8.3 ms single half-sine-wave

150

Superimposed on rated load (JEDEC method)

P_D

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Ambient

2.0

16.6

mW/°C

°C/W

R_θJA

R_θJL

T_stg

T_J

Thermal Resistance, Junction to Lead

Storage Temperature Range

2.0

°C/W

°C

-65 to +175

-65 to +150

Operating Junction Temperature

°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Electrical Characteristics

T_A= 25°C unless otherwise noted

Parameter

Device

Units

1035

1045

1050

1060

Peak Repetitive Reverse Voltage

Maximum RMS Voltage

DC Reverse Voltage

(Rated V_R)

10,000

V/uS

Voltage Rate of Change (Rated V_R)

Maximum Reverse Current

0.1

@ rated V_R

T_A= 25°C

T_A= 125°C

Maximum Forward Voltage

_{F =}10 A, T_C= 25°C

0.80

0.70

0.95

0.85

0.57

0.84

0.72

I_{F =}10 A, T_C= 125°C

I_{F =}20 A, T_C= 25°C

I_{F =}20 A, T_C= 125°C

Peak Repetitive Reverse Surge

Current

1.0

0.5

2.0 us Pulse Width, f = 1.0 KHz

MBR1035 - MBR1060, Rev. A

1999 Fairchild Semiconductor Corporation

Schotty Barrier Rectifier

(continued)

Typical Characteristics

Forward Current Derating Curve

Non-Repetitive Surge Current

175

150

125

100

MBR1035-MBR1045

MBR1050-MBR1060

SINGLE PHASE

HALF WAVE

60HZ

RESISTIVE OR

INDUCTIVE LOAD

.375" (9.00mm) LOAD

LENGTHS

100

125

150

175

0.1

100

AMBIENT TEMPERATURE ( C)

NUMBER OF CYCLES AT 60Hz

Forward Characteristics

Reverse Characteristics

MBR1035-MBR1045

= 25ºC

= 150ºC

= 125ºC

MBR1050-MBR1060

MBR1035-MBR1045

MBR1050-MBR1060

= 75ºC

0.1

0.01

0.001

= 25ºC

Pulse Width = 300µS

2% Duty Cycle

MBR1050-MBR1060

0.01

100

120

0.2

0.4

0.6

0.8

1.2

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

FORWARD VOLTAGE (V)

Typical Junction Capacitance

Transient Thermal Impedance

5000

100

2000

1000

500

MBR1035-MBR1045

MBR1050-MBR1060

200

100

0.1

100

0.01

0.1

100

REVERSE VOLTAGE (V)

T. PULSE DURATION (sec.)

MBR1035 - MBR1060, Rev. A

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

ACEx™

CoolFET™

ISOPLANAR™

MICROWIRE™

POP™

PowerTrench™

QS™

CROSSVOLT™

E²CMOS^TM

FACT™

FACT Quiet Series™

Quiet Series™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

TinyLogic™

FAST^®

FASTr™

GTO™

HiSeC™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or

In Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

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MBR1050产品参数

型号:	MBR1050
是否Rohs认证：	不符合
生命周期：	Obsolete
IHS 制造商：	VISHAY INTERTECHNOLOGY INC
包装说明：	R-PSFM-T2
Reach Compliance Code：	unknown
ECCN代码：	EAR99
HTS代码：	8541.10.00.80
风险等级：	5.08
Is Samacsys：	N
其他特性：	LOW POWER LOSS, FREE WHEELING
应用：	EFFICIENCY
外壳连接：	CATHODE
配置：	SINGLE
二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	0.95 V
JEDEC-95代码：	TO-220AC
JESD-30 代码：	R-PSFM-T2
JESD-609代码：	e0
最大非重复峰值正向电流：	150 A
元件数量：	1
相数：	1
端子数量：	2
最高工作温度：	150 °C
最低工作温度：	-65 °C
最大输出电流：	10 A
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED
认证状态：	Not Qualified
最大重复峰值反向电压：	50 V
子类别：	Rectifier Diodes
表面贴装：	NO
技术：	SCHOTTKY
端子面层：	Tin/Lead (Sn/Pb)
端子形式：	THROUGH-HOLE
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

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