MC33202DR2原理图各脚功能电路原理芯片引脚定义引脚图及功能-中国IC网-芯三七

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产品型号MC33202DR2的概述

芯片MC33202DR2的概述 MC33202DR2是一款高性能双路运算放大器，由知名半导体公司摩托罗拉（Motorola）开发。该芯片在多个电子应用中扮演着重要角色，尤其是在音频信号处理、传感器信号放大及过程控制领域。其设计旨在提供出色的线性度、低功耗及高输入阻抗，适合多种工业和消费类电子产品的需求。MC33202DR2不仅仅是一款高增益放大器，同时具有卓越的共模抑制比和良好的频率响应。芯片MC33202DR2的详细参数 MC33202DR2的主要参数包括： - 类型：双路运算放大器 - 供电电压范围：±2V至±18V - 增益带宽积：约1MHz - 输入阻抗：高达2MΩ - 输出电流：每路可供大约20mA - 总谐波失真（THD）：典型值在0.01%以下 - 共模抑制比（CMRR）：优于100dB - 电源抑制比（PSRR）：优于100dB - 温度范围：-40°C至+85°C ...

产品型号MC33202DR2的Datasheet PDF文件预览

MC33201, MC33202,

MC33204, NCV33202,

NCV33204

Low Voltage, Rail−to−Rail

Operational Amplifiers

http://onsemi.com

The MC33201/2/4 family of operational amplifiers provide

rail−to−railoperation on both the input and output. The inputs can be

driven as high as 200 mV beyond the supply rails without phase

reversal on the outputs, and the output can swing within 50 mV of each

rail. This rail−to−rail operation enables the user to make full use of the

supply voltage range available. It is designed to work at very low

supply voltages (± 0.9 V) yet can operate with a supply of up to +12 V

and ground. Output current boosting techniques provide a high output

current capability while keeping the drain current of the amplifier to a

minimum. Also, the combination of low noise and distortion with a

high slew rate and drive capability make this an ideal amplifier for

audio applications.

PDIP−8

P, VP SUFFIX

CASE 626

SOIC−8

D, VD SUFFIX

CASE 751

Micro8]

DM SUFFIX

CASE 846A

• Low Voltage, Single Supply Operation

(+1.8 V and Ground to +12 V and Ground)

• Input Voltage Range Includes both Supply Rails

• Output Voltage Swings within 50 mV of both Rails

• No Phase Reversal on the Output for Over−driven Input Signals

PDIP−14

P, VP SUFFIX

CASE 646

• High Output Current (I = 80 mA, Typ)

• Low Supply Current (I = 0.9 mA, Typ)

• 600 W Output Drive Capability

• Extended Operating Temperature Ranges

(−40° to +105°C and −55° to +125°C)

SOIC−14

D, VD SUFFIX

CASE 751A

• Typical Gain Bandwidth Product = 2.2 MHz

• Pb−Free Packages are Available

TSSOP−14

DTB SUFFIX

CASE 948G

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 10 of this data sheet.

DEVICE MARKING INFORMATION

See general marking information in the device marking

section on page 11 of this data sheet.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

March, 2004 − Rev. 12

MC33201/D

MC33201, MC33202, MC33204, NCV33202, NCV33204

PIN CONNECTIONS

MC33201

MC33204

All Case Styles

Output 1

Inputs 1

14 Output 4

Inputs 4

Inputs

Output

Inputs 2

Output 2

Inputs 3

Output 3

(Top View)

MC33202

All Case Styles

(Top View)

Output 1

Output 2

Inputs 1

Inputs 2

(Top View)

inꢀ−

out

inꢀ+

This device contains 70 active transistors (each amplifier).

Figure 1. Circuit Schematic

(Each Amplifier)

http://onsemi.com

MC33201, MC33202, MC33204, NCV33202, NCV33204

MAXIMUM RATINGS

Rating

Symbol

Value

+13

Unit

Supply Voltage (V to V

)

Input Differential Voltage Range

IDR

Note 1

Common Mode Input Voltage Range (Note 2)

+ 0.5 V to

− 0.5 V

Output Short Circuit Duration

Maximum Junction Temperature

Storage Temperature

Note 3

+150

sec

°C

stg

− 65 to +150

Note 3

°C

Maximum Power Dissipation

DC ELECTRICAL CHARACTERISTICS (T = 25°C)

Characteristic

= 2.0 V

= 3.3 V

V = 5.0 V

Unit

Input Offset Voltage

IO (max)

MC33201

± 8.0

± 6.0

MC33202, NCV33202

MC33204

±10

±12

±10

±12

± 8.0

±10

Output Voltage Swing

(R = 10 kW)

1.9

0.10

3.15

0.15

4.85

0.15

min

max

Power Supply Current

per Amplifier (I )

1.125

Specifications at V = 3.3 V are guaranteed by the 2.0 V and 5.0 V tests. V = GND.

DC ELECTRICAL CHARACTERISTICS (V = + 5.0 V, V = Ground, T = 25°C, unless otherwise noted.)

Characteristic

Figure

Symbol

Min

Typ

Max

Unit

Input Offset Voltage (V

0 V to 0.5 V, V

1.0 V to 5.0 V)

MC33201: T = + 25°C

−

6.0

9.0

8.0

MC33201: T = − 40° to +105°C

MC33201V: T = − 55° to +125°C

MC33202: T = + 25°C

MC33202: T = − 40° to +105°C

MC33202V: T = − 55° to +125°C

NCV33202V: T = − 55° to +125°C (Note 4)

MC33204: T = + 25°C

MC33204: T = − 40° to +105°C

MC33204V: T = − 55° to +125°C

Input Offset Voltage Temperature Coefficient (R = 50 W)

DV /DT

mV/°C

T = − 40° to +105°C

T = − 55° to +125°C

−

2.0

−

Input Bias Current (V

= 0 V to 0.5 V, V

= 1.0 V to 5.0 V)

5, 6

T = + 25°C

−

100

−

200

250

500

T = − 40° to +105°C

T = − 55° to +125°C

Input Offset Current (V

= 0 V to 0.5 V, V

= 1.0 V to 5.0 V)

−

T = + 25°C

−

5.0

−

100

200

T = − 40° to +105°C

T = − 55° to +125°C

Common Mode Input Voltage Range

ICR

−

1. The differential input voltage of each amplifier is limited by two internal parallel back−to−back diodes. For additional differential input voltage

range, use current limiting resistors in series with the input pins.

2. The input common mode voltage range is limited by internal diodes connected from the inputs to both supply rails. Therefore, the voltage

on either input must not exceed either supply rail by more than 500 mV.

3. Power dissipation must be considered to ensure maximum junction temperature (T ) is not exceeded. (See Figure 2)

4. NCV33202 and NCV33204 are qualified for automotive use.

http://onsemi.com

MC33201, MC33202, MC33204, NCV33202, NCV33204

DC ELECTRICAL CHARACTERISTICS (cont.) (V = + 5.0 V, V = Ground, T = 25°C, unless otherwise noted.)

Characteristic

Figure

Symbol

Min

Typ

Max

Unit

Large Signal Voltage Gain (V = + 5.0 V, V = − 5.0 V)

VOL

kV/V

R = 10 kW

R = 600 W

300

250

−

Output Voltage Swing (V = ± 0.2 V)

8, 9, 10

R = 10 kW

4.85

−

4.75

−

4.95

0.05

4.85

0.15

−

0.15

−

R = 10 kW

R = 600 W

0.25

Common Mode Rejection (V = 0 V to 5.0 V)

CMR

−

Power Supply Rejection Ratio

PSRR

mV/V

/V = 5.0 V/GND to 3.0 V/GND

500

−

CC EE

Output Short Circuit Current (Source and Sink)

Power Supply Current per Amplifier (V = 0 V)

13, 14

T = − 40° to +105°C

T = − 55° to +125°C

−

0.9

1.125

AC ELECTRICAL CHARACTERISTICS (V = + 5.0 V, V = Ground, T = 25°C, unless otherwise noted.)

Characteristic

Figure

Symbol

Min

Typ

Max

Unit

Slew Rate

(V = ± 2.5 V, V = − 2.0 V to + 2.0 V, R = 2.0 kW, A = +1.0)

16, 26

V/ms

0.5

−

1.0

2.2

−

Gain Bandwidth Product (f = 100 kHz)

Gain Margin (R = 600 W, C = 0 pF)

GBW

MHz

20, 21, 22

−

Phase Margin (R = 600 W, C = 0 pF)

−

Deg

Channel Separation (f = 1.0 Hz to 20 kHz, A = 100)

−

Power Bandwidth (V = 4.0 V , R = 600 W, THD ≤ 1 %)

−

kHz

Total Harmonic Distortion (R = 600 W, V = 1.0 V , A = 1.0)

THD

f = 1.0 kHz

f = 10 kHz

−

0.002

0.008

−

Open Loop Output Impedance

(V = 0 V, f = 2.0 MHz, A = 10)

−

100

200

8.0

−

Differential Input Resistance (V

= 0 V)

Differential Input Capacitance (V

= 0 V)

Equivalent Input Noise Voltage (R = 100 W)

nV/

f = 10 Hz

f = 1.0 kHz

−

Equivalent Input Noise Current

f = 10 Hz

pA/

−

0.8

0.2

−

f = 1.0 kHz

http://onsemi.com

MC33201, MC33202, MC33204, NCV33202, NCV33204

2500

2000

1500

1000

500

360 amplifiers tested from

3 (MC33204) wafer lots

ꢁV = +ꢀ5.0 V

ꢁV = Gnd

ꢁT = 25°C

ꢁDIP Package

8 and 14 Pin DIP Pkg

TSSOP−14 Pkg

SO−14 Pkg

5.0

SOIC−8

Pkg

−ꢀ55 −ꢀ40 −ꢀ25

125

−10 −ꢀ8.0 −ꢀ6.0 −ꢀ4.0 −ꢀ2.0

2.0 4.0 6.0 8.0

T , AMBIENT TEMPERATURE (°C)

V , INPUT OFFSET VOLTAGE (mV)

Figure 2. Maximum Power Dissipation

versus Temperature

Figure 3. Input Offset Voltage Distribution

200

160

120

= +ꢀ5.0 V

= Gnd

360 amplifiers tested from

3 (MC33204) wafer lots

ꢁV = +ꢀ5.0 V

ꢁV = Gnd

ꢁT = 25°C

ꢁDIP Package

= 0 V to 0.5 V

> 1.0 V

−ꢀ55

−ꢀ40 −ꢀ25

125

−ꢀ50 −ꢀ40 −ꢀ30 −ꢀ20 −10

, INPUT OFFSET VOLTAGE TEMPERATURE COEFFICIENT ( V/ C)

T , AMBIENT TEMPERATURE (°C)

Figure 4. Input Offset Voltage

Temperature Coefficient Distribution

Figure 5. Input Bias Current

versus Temperature

150

100

300

260

220

180

140

100

−ꢀ50

−100

−150

−ꢀ200

−ꢀ250

= +ꢀ5.0 V

= Gnd

= 12 V

= Gnd

R = 600 W

DV = 0.5 V to 4.5 V

T = 25°C

2.0

4.0

6.0

8.0

−ꢀ55 −ꢀ40 −ꢀ25

105 125

, INPUT COMMON MODE VOLTAGE (V)

T , AMBIENT TEMPERATURE (°C)

Figure 6. Input Bias Current

versus Common Mode Voltage

Figure 7. Open Loop Voltage Gain versus

Temperature

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MC33201, MC33202, MC33204, NCV33202, NCV33204

R = 600 W

T = 25°C

T = −ꢀ55°C

T = 125°C

− 0.2 V

− 0.4 V

+ 0.4 V

+ 0.2 V

T = 25°C

8.0

6.0

4.0

2.0

= +ꢀ5.0 V

= −ꢀ5.0 V

T = 25°C

T = 125°C

T = −ꢀ55°C

±1.0

±ꢀ2.0

±ꢀ3.0

, V SUPPLY VOLTAGE (V)

±ꢀ4.0

±ꢀ5.0

±ꢀ6.0

5.0

I , LOAD CURRENT (mA)

Figure 8. Output Voltage Swing

versus Supply Voltage

Figure 9. Output Saturation Voltage

versus Load Current

9.0

6.0

100

= +ꢀ6.0 V

= −ꢀ6.0 V

= +ꢀ6.0 V

= −ꢀ6.0 V

R = 600 W

A = +1.0

T = 25°C

3.0

T = −ꢀ55° to +125°C

1.0 k

10 k

100 k

1.0 M

100

1.0 k

10 k

100 k

1.0 M

f, FREQUENCY (Hz)

Figure 10. Output Voltage

versus Frequency

Figure 11. Common Mode Rejection

versus Frequency

120

100

Source

PSR+

PSR−

Sink

= +ꢀ6.0 V

= −ꢀ6.0 V

= +ꢀ6.0 V

= −ꢀ6.0 V

T = 25°C

T = −ꢀ55° to +125°C

1.0

2.0

3.0

4.0

5.0

6.0

100

1.0 k

10 k

100 k

1.0 M

f, FREQUENCY (Hz)

out

, OUTPUT VOLTAGE (V)

Figure 12. Power Supply Rejection

versus Frequency

Figure 13. Output Short Circuit Current

versus Output Voltage

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MC33201, MC33202, MC33204, NCV33202, NCV33204

2.0

1.6

150

125

= +ꢀ5.0 V

= Gnd

T = 125°C

100

Source

Sink

1.2

T = 25°C

0.8

0.4

T = −ꢀ55°C

−ꢀ55 −ꢀ40 −ꢀ25

70 85

105 125

±ꢀ0

±1.0

±ꢀ2.0

±ꢀ3.0

±ꢀ4.0

±ꢀ5.0

±ꢀ6.0

T , AMBIENT TEMPERATURE (°C)

, SUPPLY VOLTAGE (V)

Figure 14. Output Short Circuit Current

versus Temperature

Figure 15. Supply Current per Amplifier

versus Supply Voltage with No Load

2.0

4.0

3.0

2.0

1.0

= +ꢀ2.5 V

= −ꢀ2.5 V

= ±ꢀ2.0 V

= +ꢀ2.5 V

= −ꢀ2.5 V

f = 100 kHz

1.5

1.0

0.5

+Slew Rate

−Slew Rate

−ꢀ55 −ꢀ40 −ꢀ25

70 85

105 125

−ꢀ55 −ꢀ40 −ꢀ25

70 85

105 125

T , AMBIENT TEMPERATURE (°C)

Figure 16. Slew Rate

versus Temperature

Figure 17. Gain Bandwidth Product

versus Temperature

V = ±ꢀ6.0 V

C = 0 pF

T = 25°C

R = 600 W

120

160

200

240

120

160

1A − Phase, C = 0 pF

1B − Gain, C = 0 pF

1A − Phase, V = ±ꢀ6.0 V

2A − Phase, C = 300 pF

1B − Gain, V = ±ꢀ6.0 V

−10

200

240

2B − Gain, C = 300 pF

2A − Phase, V = ±ꢀ1.0 V

2B − Gain, V = ±ꢀ1.0 V

−ꢀ30

10 k

100 k

1.0 M

10 M

10 k

100 k

1.0 M

10 M

f, FREQUENCY (Hz)

Figure 18. Voltage Gain and Phase

versus Frequency

Figure 19. Voltage Gain and Phase

versus Frequency

http://onsemi.com

MC33201, MC33202, MC33204, NCV33202, NCV33204

Phase Margin

= +ꢀ6.0 V

= −ꢀ6.0 V

T = 25°C

= +ꢀ6.0 V

= −ꢀ6.0 V

R = 600 W

C = 100 pF

Gain Margin

100 k

−ꢀ55 −ꢀ40 −ꢀ25

70 85

105 125

100

1.0 k

10 k

T , AMBIENT TEMPERATURE (°C)

R , DIFFERENTIAL SOURCE RESISTANCE (W)

Figure 20. Gain and Phase Margin

versus Temperature

Figure 21. Gain and Phase Margin

versus Differential Source Resistance

8.0

6.0

4.0

2.0

150

= +ꢀ6.0 V

= −ꢀ6.0 V

A = 100

Phase Margin

Gain Margin

R = 600 W

A = 100

120

T = 25°C

A = 10

= +ꢀ6.0 V

= −ꢀ6.0 V

= 8.0 V

T = 25°C

100

C , CAPACITIVE LOAD (pF)

1.0 k

100

1.0 k

f, FREQUENCY (Hz)

10 k

Figure 22. Gain and Phase Margin

versus Capacitive Load

Figure 23. Channel Separation

versus Frequency

5.0

4.0

= −ꢀ5.0 V

R = 600 W

= +ꢀ5.0 V

= +ꢀ6.0 V

= −ꢀ6.0 V

T = 25°C

= 2.0 V

T = 25°C

1.0

A = 1000

3.0

2.0

1.0

A = 100

0.1

0.01

Noise Voltage

Noise Current

A = 10

A = 1.0

0.001

100

1.0 k

f, FREQUENCY (Hz)

10 k

100 k

100

1.0 k

f, FREQUENCY (Hz)

10 k

100 k

Figure 24. Total Harmonic Distortion

versus Frequency

Figure 25. Equivalent Input Noise Voltage

and Current versus Frequency

http://onsemi.com

MC33201, MC33202, MC33204, NCV33202, NCV33204

DETAILED OPERATING DESCRIPTION

General Information

Circuit Information

The MC33201/2/4 family of operational amplifiers are

unique in their ability to swing rail−to−rail on both the input

and the output with a completely bipolar design. This offers

low noise, high output current capability and a wide

common mode input voltage range even with low supply

voltages. Operation is guaranteed over an extended

temperature range and at supply voltages of 2.0 V, 3.3 V and

5.0 V and ground.

Rail−to−rail performance is achieved at the input of the

amplifiers by using parallel NPN−PNP differential input

stages. When the inputs are within 800 mV of the negative

rail, the PNP stage is on. When the inputs are more than 800

mV greater than V , the NPN stage is on. This switching of

input pairs will cause a reversal of input bias currents (see

Figure 6). Also, slight differences in offset voltage may be

noted between the NPN and PNP pairs. Cross−coupling

techniques have been used to keep this change to a minimum.

In addition to its rail−to−rail performance, the output stage

is current boosted to provide 80 mA of output current,

enabling the op amp to drive 600 W loads. Because of this

high output current capability, care should be taken not to

exceed the 150°C maximum junction temperature.

Since the common mode input voltage range extends from

to V , it can be operated with either single or split

voltage supplies. The MC33201/2/4 are guaranteed not to

latch or phase reverse over the entire common mode range,

however, the inputs should not be allowed to exceed

maximum ratings.

= +ꢀ6.0 V

= −ꢀ6.0 V

= +ꢀ6.0 V

= −ꢀ6.0 V

R = 600 W

C = 100 pF

R = 600 W

C = 100 pF

T = 25°C

t, TIME (5.0 ms/DIV)

t, TIME (10 ms/DIV)

Figure 26. Noninverting Amplifier Slew Rate

Figure 27. Small Signal Transient Response

= +ꢀ6.0 V

= −ꢀ6.0 V

R = 600 W

C = 100 pF

A = 1.0

T = 25°C

t, TIME (10 ms/DIV)

Figure 28. Large Signal Transient Response

Surface mount board layout is a critical portion of the total

design. The footprint for the semiconductor packages must be

the correct size to ensure proper solder connection interface

between the board and the package. With the correct pad

geometry, the packages will self−align when subjected to a

solder reflow process.

http://onsemi.com

MC33201, MC33202, MC33204, NCV33202, NCV33204

ORDERING INFORMATION

Operational

Amplifier Function

Operating

Temperature Range

†

Device

MC33201D

Package

SOIC−8

PDIP−8

SOIC−8

Shipping

Single

T = −40° to +105°C

98 Units / Rail

2500 Units / Tape & Reel

50 Units / Rail

MC33201DR2

MC33201P

MC33201VD

MC33202D

T = −55° to 125°C

98 Units / Rail

Dual

T = −40 ° to +105°C

98 Units / Rail

SOIC−8

(Pb−Free)

MC33202DG

MC33202DR2

MC33202DR2G

SOIC−8

2500 Units / Tape & Reel

SOIC−8

(Pb−Free)

Dual

MC33202DMR2

MC33202P

T = −40 ° to +105°C

Micro−8

PDIP−8

SOIC−8

PDIP−8

SO−14

4000 Units / Tape & Reel

50 Units / Rail

MC33202VD

T = −55° to 125°C

98 Units / Rail

MC33202VDR2

NCV33202VDR2*

MC33202VP

2500 Units / Tape & Reel

50 Units / Rail

Quad

MC33204D

T = −40 ° to +105°C

55 Units / Rail

MC33204DR2

MC33204DTB

MC33204DTBR2

MC33204P

SO−14

2500 Units / Tape & Reel

96 Units / Rail

TSSOP−14

PDIP−14

SO−14

2500 Units / Tape & Reel

25 Units / Rail

MC33204VD

T = −55° to 125°C

55 Units / Rail

MC33204VDR2

NCV33204DR2*

NCV33204DTBR2*

MC33204VP

SO−14

2500 Units / Tape & Reel

25 Units / Rail

SO−14

TSSOP−14

PDIP−14

*NCV33202 and NCV33204 are qualified for automotive use.

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

http://onsemi.com

MC33201, MC33202, MC33204, NCV33202, NCV33204

MARKING DIAGRAMS

PDIP−8

P SUFFIX

CASE 626

PDIP−8

VP SUFFIX

CASE 626

Micro−8

DM SUFFIX

CASE 846A

SOIC−8

D SUFFIX

CASE 751

SOIC−8

VD SUFFIX

CASE 751

SO−14

D SUFFIX

CASE 751A

MC3320xP

AWL

MC33202VP

AWL

3320x

ALYW

320xV

ALYW

3202

AYW

MC33204D

AWLYWW

YYWW

SO−14

VD SUFFIX

CASE 751A

PDIP−14

P SUFFIX

CASE 646

PDIP−14

VP SUFFIX

CASE 646

TSSOP−14

DTB SUFFIX

CASE 948G

MC33204P

AWLYYWW

MC33204VP

AWLYYWW

MC33204VD

AWLYWW

MC33

204

ALYW

MC33

204V

ALYW

= 1 or 2

= Assembly Location

WL, L = Wafer Lot

YY, Y = Year

WW, W = Work Week

*This marking diagram applies to NCV3320x

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MC33201, MC33202, MC33204, NCV33202, NCV33204

PACKAGE DIMENSIONS

PDIP−8

P, VP SUFFIX

CASE 626−05

ISSUE L

NOTES:

1. DIMENSION L TO CENTER OF LEAD WHEN

FORMED PARALLEL.

2. PACKAGE CONTOUR OPTIONAL (ROUND OR

SQUARE CORNERS).

3. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

−B−

MILLIMETERS

INCHES

MIN

0.370

DIM MIN

MAX

0.400

0.260

0.175

0.020

0.070

9.40

6.10

3.94

0.38

1.02

10.16

6.60 0.240

4.45 0.155

0.51 0.015

1.78 0.040

−A−

NOTE 2

2.54 BSC

0.100 BSC

0.76

0.20

2.92

1.27 0.030

0.30 0.008

3.43

0.050

0.012

0.135

0.115

7.62 BSC

0.300 BSC

−−−

0.76

−−−

1.01 0.030

0.040

−T−

SEATING

PLANE

0.13 (0.005)

http://onsemi.com

MC33201, MC33202, MC33204, NCV33202, NCV33204

SOIC−8

D, VD SUFFIX

CASE 751−07

ISSUE AA

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

−X−

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION A AND B DO NOT INCLUDE MOLD

PROTRUSION.

4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER

SIDE.

5. DIMENSION D DOES NOT INCLUDE DAMBAR

PROTRUSION. ALLOWABLE DAMBAR

PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN

EXCESS OF THE D DIMENSION AT MAXIMUM

MATERIAL CONDITION.

0.25 (0.010)

−Y−

6. 751−01 THRU 751−06 ARE OBSOLETE. NEW

STANDAARD IS 751−07

MILLIMETERS

INCHES

DIM MIN

MAX

5.00

4.00

1.75

0.51

MIN

MAX

0.197

0.157

0.069

0.020

4.80

3.80

1.35

0.33

0.189

0.150

0.053

0.013

0.050 BSC

0.004

0.007

0.016

0.010

0.228

N X 45

SEATING

PLANE

−Z−

1.27 BSC

0.10 (0.004)

0.10

0.19

0.40

0.25

1.27

0.010

0.050

0.25

5.80

0.50

6.20

0.020

0.244

0.25 (0.010)

SOLDERING FOOTPRINT*

1.52

0.060

7.0

0.275

4.0

0.155

0.6

0.024

1.270

0.050

inches

SCALE 6:1

SOIC−8

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

http://onsemi.com

MC33201, MC33202, MC33204, NCV33202, NCV33204

PACKAGE DIMENSIONS

Micro8

DM SUFFIX

CASE 846A−02

ISSUE F

−A−

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION A DOES NOT INCLUDE MOLD FLASH,

PROTRUSIONS OR GATE BURRS. MOLD FLASH,

PROTRUSIONS OR GATE BURRS SHALL NOT

EXCEED 0.15 (0.006) PER SIDE.

−B−

4. DIMENSION B DOES NOT INCLUDE INTERLEAD

FLASH OR PROTRUSION. INTERLEAD FLASH OR

PROTRUSION SHALL NOT EXCEED 0.25 (0.010)

PER SIDE.

PIN 1 ID

5. 846A−01 OBSOLETE, NEW STANDARD 846A−02.

D 8 PL

MILLIMETERS

INCHES

0.08 (0.003)

DIM MIN

MAX

3.10

1.10

MIN

MAX

0.122

0.043

0.016

2.90

−−−

0.25

0.65 BSC

0.05

0.13

4.75

0.40

0.114

−−−

0.40 0.010

SEATING

PLANE

0.026 BSC

−T−

0.15 0.002

0.23 0.005

5.05 0.187

0.70 0.016

0.006

0.009

0.199

0.028

0.038 (0.0015)

STYLE 1:

STYLE 2:

STYLE 3:

PIN 1. SOURCE

PIN 1. SOURCE 1

2. GATE 1

3. SOURCE 2

4. GATE 2

PIN 1. N−SOURCE

2. N−GATE

3. P−SOURCE

4. P−GATE

2. SOURCE

3. SOURCE

4. GATE

5. DRAIN

6. DRAIN

7. DRAIN

8. DRAIN

5. DRAIN 2

6. DRAIN 2

7. DRAIN 1

8. DRAIN 1

5. P−DRAIN

6. P−DRAIN

7. N−DRAIN

8. N−DRAIN

SOLDERING FOOTPRINT*

1.04

^8X0.041

0.38

0.015

3.20

4.24

5.28

0.126

0.167 0.208

0.65

^6X0.0256

SCALE 8:1

inches

Micro8E

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

http://onsemi.com

MC33201, MC33202, MC33204, NCV33202, NCV33204

PACKAGE DIMENSIONS

PDIP−14

P, VP SUFFIX

CASE 646−06

ISSUE M

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION L TO CENTER OF LEADS WHEN

FORMED PARALLEL.

4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.

5. ROUNDED CORNERS OPTIONAL.

INCHES

DIM MIN MAX

MILLIMETERS

MIN

18.16

6.10

3.69

0.38

1.02

MAX

18.80

6.60

4.69

0.53

1.78

0.715

0.240

0.145

0.015

0.040

0.770

0.260

0.185

0.021

0.070

0.100 BSC

2.54 BSC

0.052

0.008

0.115

0.290

−−−

0.095

0.015

0.135

0.310

10 −−−

1.32

0.20

2.92

7.37

2.41

0.38

3.43

7.87

−T−

SEATING

PLANE

0.015

0.039

0.38

1.01

D 14 PL

0.13 (0.005)

SOIC−14

D, VD SUFFIX

CASE 751A−03

ISSUE F

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSIONS A AND B DO NOT INCLUDE

MOLD PROTRUSION.

−A−

4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)

PER SIDE.

5. DIMENSION D DOES NOT INCLUDE DAMBAR

PROTRUSION. ALLOWABLE DAMBAR

PROTRUSION SHALL BE 0.127 (0.005) TOTAL

IN EXCESS OF THE D DIMENSION AT

MAXIMUM MATERIAL CONDITION.

−B−

P 7 PL

0.25 (0.010)

MILLIMETERS

DIM MIN MAX

INCHES

MIN

MAX

0.344

0.157

0.068

0.019

0.049

8.55

3.80

1.35

0.35

0.40

8.75 0.337

4.00 0.150

1.75 0.054

0.49 0.014

1.25 0.016

R X 45

1.27 BSC

0.050 BSC

−T−

SEATING

PLANE

0.19

0.10

0.25 0.008

0.25 0.004

0.009

D 14 PL

0.25 (0.010)

5.80

0.25

6.20 0.228

0.50 0.010

0.244

0.019

http://onsemi.com

MC33201, MC33202, MC33204, NCV33202, NCV33204

PACKAGE DIMENSIONS

TSSOP−14

DTB SUFFIX

CASE 948G−01

ISSUE O

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION A DOES NOT INCLUDE MOLD FLASH,

PROTRUSIONS OR GATE BURRS. MOLD FLASH

OR GATE BURRS SHALL NOT EXCEED 0.15

(0.006) PER SIDE.

4. DIMENSION B DOES NOT INCLUDE INTERLEAD

FLASH OR PROTRUSION. INTERLEAD FLASH OR

PROTRUSION SHALL NOT EXCEED

0.25 (0.010) PER SIDE.

14X K REF

0.10 (0.004)

0.15 (0.006) T U

0.25 (0.010)

2X L/2

−U−

5. DIMENSION K DOES NOT INCLUDE DAMBAR

PROTRUSION. ALLOWABLE DAMBAR

PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN

EXCESS OF THE K DIMENSION AT MAXIMUM

MATERIAL CONDITION.

PIN 1

IDENT.

6. TERMINAL NUMBERS ARE SHOWN FOR

REFERENCE ONLY.

DETAIL E

7. DIMENSION A AND B ARE TO BE DETERMINED

AT DATUM PLANE −W−.

0.15 (0.006) T U

MILLIMETERS

DIM MIN MAX

INCHES

MIN

MAX

0.200

0.177

0.047

0.006

0.030

−V−

4.90

4.30

−−−

5.10 0.193

4.50 0.169

1.20

J J1

−−−

0.05

0.50

0.15 0.002

0.75 0.020

SECTION N−N

0.65 BSC

0.026 BSC

0.50

0.09

0.19

0.60 0.020

0.20 0.004

0.16 0.004

0.30 0.007

0.25 0.007

0.024

0.008

0.006

0.012

0.010

−W−

6.40 BSC

0.252 BSC

0.10 (0.004)

SEATING

PLANE

−T−

DETAIL E

Micro8 is a trademark of International Rectifier.

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

ON Semiconductor Website: http://onsemi.com

Order Literature: http://www.onsemi.com/litorder

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

Japan: ON Semiconductor, Japan Customer Focus Center

2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051

Phone: 81−3−5773−3850

For additional information, please contact your

local Sales Representative.

MC33201/D

http://onsemi.com

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MC33202DR2产品参数

型号:	MC33202DR2
生命周期：	Transferred
IHS 制造商：	MOTOROLA INC
零件包装代码：	SOIC
包装说明：	SOP,
针数：	8
Reach Compliance Code：	unknown
ECCN代码：	EAR99
HTS代码：	8542.33.00.01
风险等级：	5.26
Is Samacsys：	N
放大器类型：	OPERATIONAL AMPLIFIER
最大平均偏置电流 (IIB)：	0.25 µA
最小共模抑制比：	60 dB
标称共模抑制比：	90 dB
最大输入失调电压：	11000 µV
JESD-30 代码：	R-PDSO-G8
JESD-609代码：	e0
长度：	4.9 mm
标称负供电电压 (Vsup)：
功能数量：	2
端子数量：	8
最高工作温度：	105 °C
最低工作温度：	-40 °C
封装主体材料：	PLASTIC/EPOXY
封装代码：	SOP
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
认证状态：	Not Qualified
座面最大高度：	1.75 mm
最小摆率：	0.5 V/us
标称压摆率：	1 V/us
子类别：	Operational Amplifier
最大压摆率：	2.25 mA
供电电压上限：	13 V
标称供电电压 (Vsup)：	5 V
表面贴装：	YES
技术：	BIPOLAR
温度等级：	INDUSTRIAL
端子面层：	Tin/Lead (Sn/Pb)
端子形式：	GULL WING
端子节距：	1.27 mm
端子位置：	DUAL
标称均一增益带宽：	2200 kHz
最小电压增益：	25000
宽度：	3.9 mm
Base Number Matches：	1

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