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    产品型号MCA002的Datasheet PDF文件预览

    MCA002  
    MECHANICAL DATA  
    Dimensions in mm (inches)  
    MULTI-CHIP ARRAY  
    4 COMMON SOURCE  
    P-CHANNEL MOSFETS  
    AND 4 COMMON SOURCE  
    N-CHANNEL MOSFETS  
    8
    .
    8
    9
    (
    0
    .
    3
    5
    0
    )
    0
    .
    3
    0
    1
    .
    2
    7
    (
    0
    .
    0
    5
    0
    )
    (
    0
    .
    0
    1
    2
    )
    t
    y
    p
    .
    R
    a
    d
    .
    1
    .
    1
    4
    ±
    0
    .
    1
    5
    4
    p
    l
    c
    s
    (
    0
    .
    0
    4
    5
    ±
    0
    .
    0
    0
    6
    )
    N
    C
    -
    O
    C
    H
    A
    N
    N
    E
    L
    M
    M
    O
    N
    S
    O
    U
    R
    C
    E
    G
    8
    D
    8
    D
    1
    G
    1
    DESCRIPTION  
    1
    2
    1
    3
    1
    4
    1
    5
    1
    6
    1
    1
    1
    0
    1
    1
    7
    8
    G
    7
    G
    2
    The MCA002 is a ceramic surface mount Mosfet array  
    designed for high reliability applications.  
    D
    D
    2
    3
    D
    D
    G
    7
    6
    0
    .
    2
    3
    (
    1
    0
    .
    0
    0
    9
    )
    9
    8
    1
    R
    a
    d
    .
    It contains 4 common source P Channel Mosfets and  
    4 common source N Channel Mosfets.  
    8
    p
    l
    c
    s
    6
    2
    G
    3
    7
    6
    5
    4
    3
    G
    5
    D
    5
    D
    4
    G
    4
    1
    .
    4
    0
    (
    0
    .
    0
    5
    5
    )
    FEATURES  
    1
    .
    1
    4
    (
    0
    .
    0
    4
    5
    )
    A N  
    O
    N
    o
    m
    .
    2
    L
    O
    .
    5
    4
    P
    C
    -
    C
    H
    N
    E
    t
    y
    p
    (
    0
    .
    1
    0
    0
    E
    )
    O
    M
    M
    N
    S
    U
    R
    C
    • Ceramic Surface Mount Package.  
    • Screening Options Available  
    N-CHANNEL DEVICES : 1-4  
    P-CHANNEL DEVICES : 5-8  
    N-CHANNEL DEVICES  
    • V  
    = 60V  
    (BR)DSS  
    • I = 200mA  
    D
    1 = D3  
    2 = G3  
    3 = G4  
    4 = D4  
    6 = D5  
    7 = G5  
    8 = G6  
    9 = D6  
    10 = D7  
    11 = G7  
    12 = G8  
    13 = D8  
    15 = D1  
    16 = G1  
    17 = G2  
    18 = D2  
    • RDS  
    = 5  
    (ON)MAX  
    • Common Source Connection  
    P-CHANNEL DEVICES  
    • V  
    = -60V  
    Pin14= N-Channel Common Source (devices1,2,3,4)  
    (BR)DSS  
    Pin 5 = P-Channel Common Source (devices 5,6,7,8)  
    • I = 200mA  
    D
    • RDS  
    = 10  
    (ON)MAX  
    • Common Source Connection  
    N Channel  
    P Channel  
    ABSOLUTE MAXIMUM RATINGS  
    DS  
    V
    Drain-Source Voltage  
    +60V  
    ±30V  
    -60V  
    ±30V  
    V
    Drain- Source Voltage  
    GS  
    I
    Continuous Drain Current (per device) (25°C)  
    Power Dissipation (per device)  
    200mA  
    0.5W  
    200mA  
    0.5W  
    D
    P
    D
    sj-c  
    sj-a  
    Thermal Resistance (junction to case)  
    Thermal Resistance (junction to ambient)  
    Storage, Junction Temperature  
    30°C/W  
    60°C/W  
    -55 to +150°C  
    T ,T  
    j
    stg  
    Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
    E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  
    Prelim. 9/99  
    MCA002  
    ELECTRICAL CHARACTERISTICS  
    N-Channel (per device) (TA = 25°C Unless otherwise noted).  
    Parameter  
    Test Conditions  
    Min.  
    Typ.  
    Max. Unit  
    STATIC ELECTRICAL RATINGS  
    Drain – Source Breakdown Voltage  
    Gate Threshold Voltage  
    Gate – Body Leakage  
    V
    V
    V
    V
    V
    V
    V
    V
    = 0  
    = V  
    I = 100µA  
    60  
    70  
    2.3  
    ±1  
    V
    V
    V
    I
    GS  
    DS  
    DS  
    DS  
    GS  
    DS  
    GS  
    GS  
    D
    (BR)DSS  
    I = 1mA  
    0.8  
    2.5  
    V
    GS  
    D
    GS(th)  
    = 0V  
    V
    = ±30V  
    nA  
    GS  
    GSS  
    DSS  
    D(on)  
    = 50V  
    = 0V  
    0.02  
    1
    µA  
    I
    I
    Zero Gate Voltage Drain Current  
    T = 125°C  
    J
    2
    = 10V  
    = 4.5V  
    = 10V  
    V
    = 10V  
    750  
    1000  
    5
    mA  
    On–State Drain Current  
    GS  
    I = 75mA  
    7.5  
    5
    D
    1
    I = 0.2A  
    2.5  
    4.4  
    230  
    r
    Drain – Source On–Resistance  
    D
    DS(ON)  
    T = 125°C  
    J
    1
    V
    V
    = 10V  
    = 5V  
    I = 0.5A  
    mS  
    S
    g
    g
    Forward Transconductance  
    DS  
    D
    fs  
    Common Source Output  
    os  
    I = 50mA  
    500  
    DS  
    D
    1
    Conductance  
    DYNAMIC CHARACTERISTICS  
    Input Capacitance  
    16  
    11  
    2
    C
    C
    C
    iss  
    V
    = 25V  
    V
    = 10V  
    GS  
    DS  
    pF  
    ns  
    Output Capacitance  
    oss  
    rss  
    f = 1MHz  
    Reverse Transfer Capacitance  
    SWITCHING CHARACTERISTICS  
    Turn–On  
    V
    V
    = 15V, R = 23 , I = 0.6A  
    7
    7
    t
    DD  
    L
    D
    d(on)  
    d(off)  
    = 10V, R = 25  
    t
    Turn–Off  
    GEN  
    G
    1 Pulse test: PW = 300 S, Duty Cycle 2%  
    2 Pulse width limited by maximum junction temperature.  
    Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
    Prelim. 9/99  
    E-mail: sales@semelab.co.uk  
    Website: http://www.semelab.co.uk  
    MCA002  
    ELECTRICAL CHARACTERISTICS  
    P-Channel (per device) (TA = 25°C Unless otherwise noted).  
    Parameter  
    Test Conditions  
    Min.  
    Typ.  
    Max. Unit  
    STATIC ELECTRICAL RATINGS  
    Drain – Source Breakdown Voltage  
    Gate Threshold Voltage  
    V
    V
    V
    = 0  
    = V  
    I = -10µA  
    -60  
    -1  
    -70  
    -1.7  
    ±1  
    V
    V
    V
    GS  
    DS  
    DS  
    D
    (BR)DSS  
    GS(th)  
    I = -1mA  
    -2.4  
    V
    GS  
    D
    = 0V  
    V
    = ±20V  
    GS  
    Gate – Body Leakage  
    nA  
    I
    GSS  
    T = 125°C  
    ±5  
    J
    V
    = -48V  
    V
    = 0V  
    GS  
    -0.02  
    -0.2  
    -80  
    11  
    DS  
    Zero Gate Voltage Drain Current  
    µA  
    I
    I
    DSS  
    T = 125°C  
    J
    1
    On–State Drain Current  
    V
    V
    V
    = -10V  
    = -4.5V  
    = -10V  
    V
    = -4.5V  
    GS  
    -50  
    mA  
    DS  
    GS  
    GS  
    D(on)  
    I = -25mA  
    25  
    10  
    D
    1
    Drain – Source On–Resistance  
    I = -0.2A  
    6
    r
    D
    DS(ON)  
    T = 125°C  
    12  
    J
    1
    Forward Transconductance  
    90  
    mS  
    S
    g
    g
    fs  
    V
    = -10V  
    I = -0.1A  
    D
    DS  
    Common Source Output  
    os  
    400  
    1
    Conductance  
    DYNAMIC CHARACTERISTICS  
    Input Capacitance  
    15  
    10  
    3
    C
    C
    C
    iss  
    V
    = -25V  
    V
    = 0V  
    DS  
    GS  
    Output Capacitance  
    pF  
    ns  
    oss  
    rss  
    f = 1MHz  
    Reverse Transfer Capacitance  
    SWITCHING CHARACTERISTICS  
    Turn–On Delay Time  
    6
    10  
    7
    t
    t
    t
    t
    d(on)  
    V
    V
    =-25V, R =133 , I = -0.18A  
    L D  
    DD  
    r
    Turn–Off Delay Time  
    = -10V, R = -25  
    G
    GEN  
    d(off)  
    r
    8
    1 Pulse test: PW = 300 S, Duty Cycle 2%  
    2 Pulse width limited by maximum junction temperature.  
    Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
    Prelim. 9/99  
    E-mail: sales@semelab.co.uk  
    Website: http://www.semelab.co.uk  
    配单直通车
    MCA.T7.675.50003CN产品参数
    型号:MCA.T7.675.50003CN
    生命周期：Active
    Reach Compliance Code：compliant
    风险等级：5.57
    连接器支架类型：CABLE ASSEMBLY
    Base Number Matches：1
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