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MCP1650/51/52/53

750 kHz Boost Controller

Description

M

Features

• Output Power Capability Over 5 Watts

• Output Voltage Capability From 3.3V to Over

100V

• 750 kHz Gated Oscillator Switching Frequency

• Adaptable Duty Cycle for Battery or Wide-Input,

Voltage-Range Applications

The MCP1650/51/52/53 is a 750 kHz gated oscillator

boost controller packaged in an 8 or 10-pin MSOP

package. Developed for high-power, portable applica-

tions, the gated oscillator controller can deliver 5 watts

of power to the load while consuming only 120 µA of

quiescent current at no load. The MCP1650/51/52/53

can operate over a wide input voltage range (2.0V to

5.5V) to accommodate multiple primary-cell and single-

cell Li-Ion battery-powered applications, in addition to

2.8V, 3.3V and 5.0V regulated input voltages.

• Input Voltage Range: 2.0V to 5.5V

• Capable of SEPIC and Flyback Topologies

• Shutdown Control with I < 0.1 µA (Typical)

Q

• Low Operating Quiescent Current: I = 120 µA

• Voltage Feedback Tolerance (0.6%, Typical)

• Popular MSOP-8 Package

• Peak Current Limit Feature

• Two Undervoltage Lockout (UVLO) Options:

- 2.0V or 2.55V

• Operating Temperature Range: -40°C to +125°C

An internal 750 kHz gated oscillator makes the

MCP1650/51/52/53 ideal for space-limited designs.

The high switching frequency minimizes the size of the

external inductor and capacitor, saving board space

and cost. The internal oscillator operates at two differ-

ent duty cycles depending on the level of the input volt-

age. By changing duty cycle in this fashion, the peak

input current is reduced at high input voltages, reducing

output ripple voltage and electrical stress on power

train components. When the input voltage is low, the

duty cycle changes to a larger value in order to provide

full-power capability at a wide input voltage range

typical of battery-powered, portable applications.

The MCP1650/51/52/53 was designed to drive external

switches directly using internal low-resistance

MOSFETs.

Additional features integrated on the MCP1650/51/52/

53 family include peak input current limit, adjustable

output voltage/current, low battery detection and

power-good indication.

Q

Applications

• High-Power Boost Applications

• High-Voltage Bias Supplies

• White LED Drivers and Flashlights

• Local 3.3V to 5.0V Supplies

• Local 3.3V to 12V Supplies

• Local 5.0V to 12V Supplies

• LCD Bias Supply

Package Types

8-Pin MSOP

1

2

3

4

1

2

3

4

EXT

GND

CS

8

7

6

5

V_IN

NC

SHDN

EXT

GND

CS

8

7

6

5

V_IN

LBO

LBI

FB

SHDN

8-Pin MSOP

10-Pin MSOP

EXT

GND

CS

FB

NC

V_IN

1

2

3

4

5

10

1

2

3

4

EXT

GND

CS

8

7

6

5

V_IN

PG

NC

SHDN

PG

9

LBO

LBI

SHDN

8

7

6

FB

2004 Microchip Technology Inc.

DS21876A-page 1

MCP1650/51/52/53

MCP1650 Block Diagram

MCP1650

V_IN

+

1R 0._-122V

9R

Internal Osc. with

+

-

2 fixed Duty Cycles

1.22V

V_HIGH

ISNS

V_DUTY

Ref

Osc.

V_LOW

Soft-

Start

DC = 80% V_IN< 3.8V

DC = 56% V_IN> 3.8V

V_HIGH

V_DUTY

ON/

OFF

+

-

CS

V_IN

Current Limit

OSC. OUT

+

-

V_REF

GND

V_LOW

V_IN

SHDN

FB

ON/OFF

Control

DR

S

Pulse

EXT

Voltage Feedback

Latch

R

Q

+

-

V_REF

1.22V

DS21876A-page 2

2004 Microchip Technology Inc.

MCP1650/51/52/53

MCP1651/2/3 Block Diagram

MCP1650/51/52/53

MCP1650 - No Features

MCP1651 - Low Battery Detection

MCP1652 - Power Good Indication

MCP1653 - Low Battery Detection and PG

MCP1653 - LBI and PG Features

MCP1651 - Low Battery Detection

LBO

V

IN

Low Battery

Comparator

+

-

1.22 Vref

LBI

CS

MCP1650

Vin

EXT

SHDN

GND

VFB

Vref. (1.22V)

MCP1652 - Power Good Indication

V

IN

PG

85% of Vref

Power Good

+

-

Comparators

+

-

A

115% of Vref

2004 Microchip Technology Inc.

DS21876A-page 3

MCP1650/51/52/53

Timing Diagram

MCP1650/1/2/3 Timing Diagram

Osc

S

R

Q

DR

EXT

S

R

Latch Truth Table

Q

S

0

1

R

0

1

0

1

Q

Qn

1

0

1

Q

Typical Application Circuits

3.3V to 12V 100 mA Boost Converter

R

SENSE

MOSFET/Schottky

Boost

Inductor

3.3 µH

Combination Device

V_OUT= 12V

0.05Ω

I

_OUT= 0 to 100 mA

V

CS

EXT

FB

IN

8

2

5

6

3

1

4

GND

SHDN

C_OUT

90.9 kΩ

Input

C_IN

10 µF

Ceramic

10 µF

on

Voltage

3.3V ±10%

NC

7

off

10 kΩ

DS21876A-page 4

2004 Microchip Technology Inc.

MCP1650/51/52/53

† Notice: Stresses above those listed under “Maximum Rat-

ings” may cause permanent damage to the device. This is a

stress rating only and functional operation of the device at

those or any other conditions above those indicated in the

operational listings of this specification is not implied. Expo-

sure to maximum rating conditions for extended periods may

affect device reliability.

1.0

ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings †

TO GND...........................................................6.0V

V

IN

CS,FB,LBI,LBO,SHDN,PG,EXT............ GND – 0.3V to

V

+ 0.3V

IN

Current at EXT pin ................................................ ±1A

Storage temperature .......................... -65°C to +150°C

Operating Junction Temperature........ -40°C to +125°C

ESD protection on all pins ........................... ≥ 4 kV HBM

DC CHARACTERISTICS

Electrical Specifications: Unless otherwise noted, all parameters apply at V = +2.7V to +5.5V, SHDN = High,

IN

T = -40°C to +125°C. Typical values apply for V = 3.3V, T +25°C.

J

IN

A

Parameters

Sym

Min

Typ

Max

Units

Conditions

Input Characteristics

Supply Voltage

Undervoltage Lockout

(S Option)

V

2.7

2.4

—

2.55

5.5

2.7

V

IN

UVLO

V

rising edge

IN

Under Voltage Lockout

(R Option)

UVLO

1.85

2.0

2.15

V

rising edge

Undervoltage Hysteresis

Shutdown Supply Current

Quiescent Supply Current

Soft Start Time

UVLO

—

117

0.001

120

—

1

220

—

mV

µA

µs

HYST

I

SHDN = GND

EXT = Open

SHD

I

Q

T

500

SS

Feedback Characteristics

Feedback Voltage

Feedback Comparator

Hysteresis

V

1.18

—

1.22

12

1.26

23

V

mV

All conditions

FB

V

HYS

Feedback Input Bias Current

Current Sense Input

I

-50

—

50

nA

V

< 1.3V

FBlk

FB

Current Sense Threshold

Delay from Current Sense to

Output

I

75

—

114

80

155

—

mV

ns

SNS-TH

T

dly_ISNS

Ext Drive

EXT Driver ON Resistance

R

—

8

4

18

12

Ω

HIGH

(High Side)

EXT Driver ON Resistance

(Low Side)

R

LOW

Oscillator Characteristics

Switching Frequency

Low Duty Cycle Switch-Over

Voltage

F

650

—

750

3.8

850

—

kHz

V

OSC

V

rising edge

IN

LowDuty

Duty Cycle Switch Voltage

Hysteresis

DC

—

92

—

mV

Hyst

Low Duty Cycle

High Duty Cycle

DC

50

72

56

80

62

88

%

LOW

HIGH

2004 Microchip Technology Inc.

DS21876A-page 5

MCP1650/51/52/53

DC CHARACTERISTICS (CONTINUED)

Electrical Specifications: Unless otherwise noted, all parameters apply at V = +2.7V to +5.5V, SHDN = High,

IN

T = -40°C to +125°C. Typical values apply for V = 3.3V, T +25°C.

J

IN

A

Parameters

Sym

Min

Typ

Max

Units

Conditions

Shutdown Input

Logic High Input

Logic Low Input

V

I

50

—

5

—

15

100

% of V

nA

IN-HIGH

IN

IN-Low

Input Leakage Current

SHDN=V

IN

SHDN

Low Battery Detect (MCP1651/MCP1653 Only)

Low Battery Threshold

Hysteresis

LBI

1.18

95

1.22

123

1.26

145

V

mV

LBI Input falling (All Conditions)

TH

LBI

THHYS

Low Battery Input Leakage

Current

I

—

10

—

nA

V

= 2.5V

LBI

Low Battery Output Voltage

V

I

—

53

0.01

200

1

mV

µA

I

V

SINK = 3.2 mA, V = 0V

LBO

LB LBI

Low Battery Output Leakage

= 5.5V, V

= 5.5V

LBI

LBO

Current

Time Delay from LBI to LBO

T

—

70

—

µs

L

Transitions from

BITH

D_LBO

BI

+ 0.1V to L

- 0.1V

BITH

Power Good Output (MCP1652/MCP1653 Only)

Power Good Threshold Low

Power Good Threshold High

Power Good Threshold

Hysteresis

V

-20

+10

—

-15

+15

5

-10

+20

—

%

Referenced to Feedback Voltage

(Both Low and High Thresholds)

PGTH-L

PGTH-H

V

PGTH-HYS

Power Good Output Voltage

V

T

—

53

85

200

—

mV

µs

I

V

SINK = 3.2 mA, V = 0V

PGOUT

PG

FB

Time Delay from V out of

Transitions from

FB

D_PG

FB

regulation to Power Good

Output transition

+ 0.1V to V

-0.1V

FBTH

TEMPERATURE SPECIFICATIONS

Electrical Specifications: Unless otherwise noted, all parameters apply at V = +2.7V to +5.5V, SHDN = High,

IN

T = -40°C to +125°C. Typical values apply for V = 3.3V, T = +25°C.

A

IN

A

Parameters

Sym

Min

Typ

Max

Units

Conditions

Temperature Ranges

Storage Temperature Range

Operating Junction Temperature

Range

T

-40

—

+125

°C

A

Continuous

J

Thermal Package Resistances

Thermal Resistance, MSOP-8

θ

—

208

113

—

°C/W Single-Layer SEMI G42-88

Board, Natural Convection

JA

Thermal Resistance, MSOP-10

°C/W 4-Layer JC51-7 Standard Board,

Natural Convection

DS21876A-page 6

2004 Microchip Technology Inc.

MCP1650/51/52/53

2.0

TYPICAL PERFORMANCE CURVES

Note:

The graphs and tables provided following this note are a statistical summary based on a limited number of

samples and are provided for informational purposes only. The performance characteristics listed herein

are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified

operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

Note: Unless otherwise indicated, V_IN= 3.3V, V_OUT= 12V, C_IN= 10 µF (x5R or X7R Ceramic), C_OUT= 10 µF (X5R or X7R),

I

_OUT= 10 mA, L = 3.3 µH, SHDN > V_IH, T_A= +25°C.

200

840

820

800

780

760

740

720

I_LOAD= 0 mA

175

150

125

100

75

T_J= +125°C

V_IN= 2.0V

T_J= +25°C

T_J= - 40°C

V_IN= 5.5V

V_IN= 4.1V

V_IN= 2.7V

20 35 50 65 80 95 110 125 140

50

2

2.5

3

3.5

4

4.5

5

5.5

6

-40 -25 -10

5

Input Voltage (V)

Ambient Temperature (°C)

FIGURE 2-1:

Input Quiescent Current vs.

FIGURE 2-4:

Oscillator Frequency vs.

Input Voltage.

Ambient Temperature.

200

175

150

125

100

3.85

3.84

3.83

3.82

3.81

3.80

3.79

3.78

3.77

3.76

3.75

V_IN= Rising

I_LOAD= 0 mA

V_IN= 5.5V

V_IN= 4.1V

V_IN= 2.7V

V_IN= 2.0V

75

50

-40 -25 -10

5

20 35 50 65 80 95 110 125

-40 -25 -10

5

20 35 50 65 80 95 110 125

Ambient Temperature (°C)

FIGURE 2-2:

Input Quiescent Current vs.

FIGURE 2-5:

Duty Cycle Switch-Over

Ambient Temperature.

Voltage vs. Ambient Temperature.

800

780

94.0

93.5

93.0

92.5

92.0

91.5

91.0

90.5

90.0

T_J= +25°C

760

740

720

700

T_J= +125°C

T_J= - 40°C

2.7

3

3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7

Input Voltage (V)

6

-40 -25 -10

5

20 35 50 65 80 95 110 125

Ambient Temperature (°C)

FIGURE 2-3:

Oscillator Frequency vs.

FIGURE 2-6:

Duty Cycle Switch-Over

Input Voltage.

Hysteresis Voltage vs. Ambient Temperature.

2004 Microchip Technology Inc.

DS21876A-page 7

MCP1650/51/52/53

Note: Unless otherwise indicated, V_IN= 3.3V, VOUT = 12V, C_IN= 10 µF (x5R or X7R Ceramic), C_OUT= 10 µF (X5R or X7R),

I

_OUT= 10 mA, L = 3.3 µH, SHDN > V_IH, T_A= +25°C.

1.0

1.230

1.225

1.220

1.215

1.210

1.205

T_A= +25°C

0.8

T_J= +125°C

T_J= +25°C

I_SINK

0.6

0.4

I_SOURCE

T_J= - 40°C

0.2

0.0

2.7 3.0 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7 6.0

2

2.5

3

3.5

4

4.5

5

5.5

6

Input Voltage (V)

FIGURE 2-7:

EXT Sink and Source

FIGURE 2-10:

Feedback Voltage vs. Input

Current vs. Input Voltage.

Voltage.

0.8

0.7

18

16

14

12

10

8

V_IN= 3.3V

I_SINK

0.6

0.5

0.4

0.3

0.2

0.1

0.0

T_J= +125°C

T_J= +25°C

I_SOURCE

T_J= - 40°C

6

4

2

0

-40 -25 -10

5

20 35 50 65 80 95 110 125

2.7

3

3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7

Input Voltage (V)

6

Ambient Temperature (°C)

FIGURE 2-8:

EXT Sink and Source

FIGURE 2-11:

Feedback Voltage

Current vs. Ambient Temperature.

Hysteresis vs. Input Voltage.

80

70

60

2.7V_FALL

50

2.7V_RISE

40

30

20

10

0

5V_RISE

5V_FALL

100

150

200

250

300

350

400

450

500

External Capacitance (pF)

FIGURE 2-9:

EXT Rise and Fall Times vs.

FIGURE 2-12:

Dynamic Load Response.

External Capacitance.

DS21876A-page 8

2004 Microchip Technology Inc.

MCP1650/51/52/53

Note: Unless otherwise indicated, V_IN= 3.3V, VOUT = 12V, C_IN= 10 µF (x5R or X7R Ceramic), C_OUT= 10 µF (X5R or X7R),

I

_OUT= 10 mA, L = 3.3 µH, SHDN > V_IH, T_A= +25°C.

T_A= 25°C

_OUT= 100 mA

89

87

85

83

81

79

77

75

I

2.7 3.0 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7 6.0

Input Votlage (V)

FIGURE 2-13:

Dynamic Line Response.

FIGURE 2-16:

Efficiency vs. Input Voltage.

90

85

80

75

70

65

60

T_A= 25°C

V_IN= 3.3V

10.0 20.0 30.0 40.0 50.0 60.0 70.0 80.0 90.0 100.0

Load Current (mA)

FIGURE 2-14:

Power-Up Timing (Input

FIGURE 2-17:

Efficiency vs. Load Current.

Voltage).

12.16

12.15

12.14

12.13

12.12

12.11

12.10

T_A= 25°C

I

_OUT= 100 mA

2.7 3.0 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7 6.0

Input Voltage (V)

FIGURE 2-18:

Output Voltage vs. Input

FIGURE 2-15:

Power-Up Timing

Voltage (Line Regulation).

(Shutdown).

2004 Microchip Technology Inc.

DS21876A-page 9

MCP1650/51/52/53

Note: Unless otherwise indicated, V_IN= 3.3V, VOUT = 12V, C_IN= 10 µF (x5R or X7R Ceramic), C_OUT= 10 µF (X5R or X7R),

I

_OUT= 10 mA, L = 3.3 µH, SHDN > V_IH, T_A= +25°C.

12.17

129

128

127

126

125

124

123

122

121

120

T_A= +25°C

T_J= +125°C

12.16

12.15

12.14

12.13

12.12

12.11

12.10

V_IN= 3.3V

T_J= +25°C

T_J= - 40°C

V_IN= 4.3V

10

20

30

40

50

60

70

80

90

100

2

2.5

3

3.5

4

4.5

5

5.5

6

Output Current (mA)

Input Votlage (V)

FIGURE 2-19:

Output Voltage vs. Output

FIGURE 2-22:

LBI Hysteresis Voltage vs.

Current (Load Regulation).

Input Voltage.

0.26

0.24

0.22

250

200

150

100

50

T_A= +25°C

I_OUT= 100mA

0.20

0.18

0.16

0.14

0.12

0.10

T_J= +125°C

T_J= +25°C

T_J= - 40°C

0

2.7 3.0 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7 6.0

Input Voltage (V)

2

4

6

8

10

LBO Sink Current (mA)

FIGURE 2-20:

Output Voltage Ripple vs.

FIGURE 2-23:

LBO Output Voltage vs.

Input Voltage.

LBO Sink Current.

1.230

1.225

1.220

1.215

1.210

1.205

T_J= +125°C

T_J= +25°C

T_J= - 40°C

2

2.5

3

3.5

4

4.5

5

5.5

6

Input Voltage (V)

FIGURE 2-21:

LBI Threshold Voltage vs.

FIGURE 2-24:

LBO Output Timing.

Input Voltage.

DS21876A-page 10

2004 Microchip Technology Inc.

MCP1650/51/52/53

Note: Unless otherwise indicated, V_IN= 3.3V, VOUT = 12V, C_IN= 10 µF (x5R or X7R Ceramic), C_OUT= 10 µF (X5R or X7R),

I

_OUT= 10 mA, L = 3.3 µH, SHDN > V_IH, T_A= +25°C.

20

116

114

112

110

108

106

104

PG_TH(HIGH)

T_A= 25°C

15

10

5

PG_{TH(Hysteresis)}

T_J= +125°C

0

-5

T_J= +25°C

-10

-15

-20

PG_TH(LOW)

T_J= - 40°C

2.7

3

3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7

Input Voltage (V)

6

2

2.5

3

3.5

4

4.5

5

5.5

6

Input Voltage (V)

FIGURE 2-25:

PG Threshold and

FIGURE 2-28:

Current Sense Threshold

Hysteresis Percentage vs. Input Voltage.

vs. Input Voltage.

250

200

20.0

16.0

T_J= +125°C

150

12.0

8.0

100

T_J= +25°C

T_J= - 40°C

50

0

4.0

T_J= - 40°C

6

T_J= +25°C

5

0.0

0

2

4

8

10

2

2.5

3

3.5

4

4.5

5.5

6

PG Output Sink Current (mA)

Input Voltage (V)

FIGURE 2-26:

PG Output Voltage vs. Sink

FIGURE 2-29:

V

High Output Voltage

EXT

Current.

vs. Input Voltage.

8.0

7.0

6.0

5.0

4.0

T_J= +125°C

T_J= - 40°C

3.0

2.0

1.0

0.0

T_J= +25°C

5

2

2.5

3

3.5

4

4.5

5.5

6

Input Voltage (V)

FIGURE 2-27:

PG Timing.

FIGURE 2-30:

V

Low Output Voltage

EXT

vs. Input Voltage.

2004 Microchip Technology Inc.

DS21876A-page 11

MCP1650/51/52/53

3.0

PIN DESCRIPTIONS

The descriptions of the pins are listed in Table 3-1.

TABLE 3-1:

Pin No.

PIN FUNCTION TABLE

Pin No. Pin No. Pin No.

Symbol

Function

MCP1650 MCP1651 MCP1652 MCP1653

1

2

3

4

5

—

8

1

2

3

4

5

6

7

—

8

1

2

3

4

5

—

7

1

2

3

4

6

7

8

9

10

EXT

GND

CS

FB

SHDN

LBI

LBO

PG

V

IN

External Gate Drive

Ground

Current Sense

Feedback Input

Shutdown

Low Battery Input

Low Battery Output

Power Good Output

Input Voltage

8

3.1

External Gate Drive (EXT)

3.6

Low Battery Input (LBI)

EXT is the output pin that drives the external N-channel

MOSFET on and off during boost operation. EXT is

equal to GND for SHDN or UVLO conditions.

LBI is the input pin for the low battery comparator.

When the voltage on this pin falls below the nominal

1.22V threshold setting, the LBO (Low Battery Output)

open-drain is active-low.

3.2

Circuit Ground (GND)

3.7

Low Battery Output (LBO)

Connect the GND pin to circuit ground. See layout

guidelines for suggested grounding physical layout.

LBO is an active-low, open-drain output capable of

sinking 10 mA when the LBI pin is below the threshold

voltage. LBO is high-impedance during SHDN or UVLO

conditions.

3.3

Current Sense (CS)

Input peak current is sensed on CS through the exter-

nal current sense resistor. When the sensed current is

converted to a voltage, the current sense threshold is

3.8

Power Good (PG)

122 mV below V typical. If that threshold is exceeded,

PG is an active-high, open-drain output capable of

sinking 10 mA when the FB input pin is 15% below its

typical value or more than 15% above its typical value,

indicating that the output voltage is out of regulation.

PG is high impedance during SHDN or UVLO

condition.

IN

the pulse is terminated asynchronously.

3.4

Feedback Input (FB)

Connect output voltage of boost converter through

external resistor divider to the FB pin for voltage

regulation. The nominal voltage that is compared to this

input for pulse termination is 1.22V.

3.9

Input Voltage (V )

IN

V

is an input supply pin. Tie 2.7V to 5.5V input power

IN

source.

3.5

Shutdown Input (SHDN)

The SHDN input is used to turn the boost converter on

and off. For normal operation, tie this pin high or to V .

IN

To turn off the device, tie this pin to low or ground.

DS21876A-page 12

2004 Microchip Technology Inc.

MCP1650/51/52/53

4.3

Fixed Duty Cycle

4.0

4.1

DETAILED DESCRIPTION

Device Overview

The MCP1650/51/52/53 family utilizes a unique two-

step maximum duty cycle architecture to minimize input

peak current and improve output ripple voltage for wide

input voltage operating ranges. When the input voltage

is below 3.8V, the duty cycle is typically 80%. For input

voltages above 3.8V, the duty cycle is typically 56%. By

decreasing the duty cycle at higher input voltages, the

input peak current is reduced. For low input voltages, a

longer duty cycle stores more energy during the on-

time of the boost MOSFET. For applications that span

the 3.8V input range, the inductor value should be

selected to meet not only the minimum input voltage at

80% duty cycle, but 3.8V at 56% duty cycle as well.

Refer to Section 5.0 “Application Circuits/Issues”

for more information about selecting inductor values.

The MCP1650/51/52/53 is a gated oscillator boost

controller. By adding an external N-channel MOSFET,

schottky diode and boost inductor, high-output power

applications can be achieved. The 750 kHz hysteretic

gated oscillator architecture enables the use of small,

low-cost external components. By using a hysteretic

approach, no compensation components are

necessary for the stability of the regulator output.

Output voltage regulation is accomplished by

comparing the output voltage (sensed through an

external resistor divider) to a reference internal to the

MCP1650/51/52/53. When the sensed output voltage

is below the reference, the EXT pin pulses the external

N-channel MOSFET on and off at the 750 kHz gated

oscillator frequency. Energy is stored in the boost

inductor when the external N-channel MOSFET is on

and is delivered to the load through the external

Schottky diode when the MOSFET is turned off.

Several pulses may be required to deliver enough

energy to pump the output voltage above the upper

hysteretic limit. Once above the hysteretic limit, the

internal oscillator is no longer gated to the EXT pin and

no energy is transferred from input to output.

4.4

Shutdown Input Operation

The SHDN pin is used to turn the MCP1650/51/52/53

on and off. When the SHDN pin is tied low, the

MCP1650/51/52/53 is off. When tied high, the

MCP1650/51/52/53 will be enabled and begin boost

operation as long as the input voltage is not below the

UVLO threshold.

4.5

Soft-Start Operation

The peak current in the MOSFET is sensed to limit its

maximum value. As with all boost topology converters,

even though the MOSFET is turned off, there is still a

DC path through the boost inductor and diode to the

load. Additional protection circuity, such as fuses, are

recommended for short circuit protection.

When power is first applied to the MCP1650/51/52/53,

the internal reference initialization is controlled to slow

down the start-up of the boost output voltage.This is

done to reduce high inrush current required from the

source. High inrush currents can cause the source

voltage to drop suddenly and trip the UVLO threshold,

shutting down the converter prior to it reaching steady-

state operation.

4.2

Input Voltage

The range of input voltage for the MCP1650/51/52/53

family of devices is specified from 2.7V to 5.5V. For the

S-option devices, the undervoltage lockout (UVLO)

feature will turn the boost controller off once the input

voltage falls below 2.55V, typical. For the R-option

devices, the UVLO is set to 2.0V. The R-option devices

are recommended for use when “bootstrapping” the

output voltage back to the input. The input of the

MCP1650/51/52/53 device is supplied by the output

voltage during boost operation. This can be used to

derive output voltages from input voltages that start up

at approximately 2V (2-cell alkaline batteries).

4.6

Gated Oscillator Architecture

A 750 kHz internal oscillator is used as the base

frequency of the MCP1650/51/52/53. The oscillator

duty cycle is typically 80% when the input voltage is

below a nominal value of 3.8V, and 56% when the

input voltage is above a nominal value of 3.8V. Two

duty cycles are provided to reduce the peak inductor

current in applications where the input voltage varies

over a wide range. High-peak inductor current results

in undesirable high-output ripple voltages. For

applications that have input voltage that cross this

3.8V boundary, both duty cycle conditions need to be

examined to determine which one has the least

amount of energy storage. Refer to Section 5.0

“Application Circuits/Issues” for more information

about design considerations.

2004 Microchip Technology Inc.

DS21876A-page 13

MCP1650/51/52/53

4.7

FB Pin

4.11 Low Battery Detect

The output voltage is fed back through a resistor divider

to the FB pin. It is then compared to an internal 1.22V

reference. When the divided-down output is below the

internal reference, the internal oscillator is gated on

and the EXT pin pulses the external N-channel

MOSFET on and off to transfer energy from the source

to the load at 750 kHz. This will cause the output volt-

age to rise until it is above the 1.22V threshold, thereby

gating the internal oscillator off. Hysteresis is provided

within the comparator and is typically 12 mV. The rate

at which the oscillator is gated on and off is determined

by the input voltage, load current, hysteresis voltage

and inductance. The output ripple voltage will vary

depending on the input voltage, load current,

hysteresis voltage and inductance.

The Low-Battery Detect (MCP1651 and MCP1653

only) feature can be used to determine when the LBI

input voltage has fallen below a predetermined

threshold. The low-battery detect comparator

continuously monitors the voltage on the LBI pin. When

the voltage on the LBI pin is above the 1.22V + 123 mV

hysteresis, the LBO pin will be high-impedance (open-

drain). When in the high-impedance state, the leakage

current into the LBO pin is typically less than 0.1 µA. As

the voltage on the LBI pin decreases and is lower than

the 1.22V typical threshold, the LBO pin will transition

to a low state and is capable of sinking up to 10 mA.

123 mV of hysteresis is provided to prevent chattering

of the LBO pin as a result of battery input impedance

and boost input current.

4.8

PWM Latch

4.12 Power Good Output

The gated oscillator is self-latched to prevent double

and sporadic pulsing. The reset into the latch is asyn-

chronous and can terminate the pulse during the on-

time of the duty cycle. The reset can be accomplished

by the feedback voltage comparator or the current limit

comparator.

The Power Good Output feature (MCP1652 and

MCP1653 only) monitors the divided-down voltage

feedback into the FB pin. When the output voltage falls

more than 15% (typical) below the regulated set point,

the power good (PG) output pin will transition from a

high-impedance state (open-drain) to a low state

capable of sinking 10 mA. If the output voltage rises

more than 15% (typical) above the regulated set point,

the PG output pin will transition from high to low.

4.9

Peak Inductor Current

The external switch peak current is sensed on the CS

pin across an optional external current sense resistor.

If the CS pin falls more than 122 mV (typical) below

4.13 Device Protection

V , the current limit comparator is set and the pulse is

IN

4.13.1

OVERCURRENT LIMIT

terminated. This prevents the current from getting too

high and damaging the N-channel MOSFET. In the

event of a short circuit, the switch current will be low

due to the current limit. However, there is a DC path

from the input through the inductor and external diode.

This is true for all boost-derived topologies and addi-

tional protection circuitry is necessary to prevent

catastrophic damage.

The Current Sense (CS) input pin is used to sense the

peak input current of the boost converter. This can be

used to limit how high the peak inductor current can

reach. The current sense feature is optional and can be

bypassed by connecting the V input pin to the CS

IN

input pin. Because of the path from input through the

boost inductor and boost diode to output, the boost

topology cannot support

a short circuit without

additional circuitry. This is typical of all boost regulators.

4.10 EXT Output Driver

The EXT output pin is designed to directly drive

external N-channel MOSFETs and is capable of

sourcing 400 mA (typical) and sinking 800 mA (typical)

for fast on and off transitions. The top side of the EXT

driver is connected directly to V , while the low side of

IN

the driver is tied to GND, providing rail-to-rail drive

capability. Design flexibility is added by connecting an

external resistor in series with the N-channel MOSFET

to control the speed of the turn on and off. By slowing

the transition speed down, there will be less high-

frequency noise. Speeding the transition up produces

higher efficiency.

DS21876A-page 14

2004 Microchip Technology Inc.

MCP1650/51/52/53

5.1.1

NON-BOOTSTRAP BOOST

5.0

5.1

APPLICATION CIRCUITS/

ISSUES

APPLICATIONS

Non-bootstrap applications are typically used when the

output voltage is boosted to a voltage that is higher

than the rated voltage of the MCP1650/51/52/53. For

non-bootstrap applications, the input voltage is

connected to the boost inductor through the optional

Typical Applications

The MCP1650/51/52/53 boost controller can be used in

several different configurations and in many different

applications. For applications that require minimum

space, low cost and high efficiency, the MCP1650/51/

52/53 product family is a good choice. It can be used in

boost, buck-boost, Single-Ended Primary Inductive

Converters (SEPIC), as well as in flyback converter

topologies.

current sense resistor and the V pin of the MCP1650/

IN

51/52/53. For this type of application, the S-option

devices (UVLO at 2.55V, typical) should be used. The

gated oscillator duty cycle will be dependant on the

value of the voltage on V . If V > 3.8V, the duty cycle

IN

will be 56%. If V < 3.8V, the duty cycle will be 80%.

IN

In non-bootstrap applications, output voltages of over

100V can be generated. Even though the MCP1650/

51/52/53 device is not connected to the high boost

output voltage, the drain of the external MOSFET and

reverse voltage of the external Schottky diode are

connected. The output voltage capacitor must also be

rated for the output voltage.

3.3V to 12V 100 mA Boost Converter

R_SENSE

MOSFET/Schottky

Boost

Combination Device

0.05 Ω

Inductor

3.3 µH

V

_OUT= 12V

I

_OUT= 0 to 100 mA

V_IN

CS

3

1

4

7

8

2

5

GND

EXT

FB

MCP1650

C_OUT

90.9 kΩ

10 kΩ

SHDN

Input

C_IN

10 µF

Voltage

3.3V ±10%

Ceramic

NC 6

NC

on

off

FIGURE 5-1:

Typical Non-Bootstrap Application Circuit (MCP1650/51/52/53).

2004 Microchip Technology Inc.

DS21876A-page 15

MCP1650/51/52/53

to start up with the input voltage below 2.7V. For this

type of application, the MCP1650/51/52/53 will start off

of the lower 2.0V input and begin to boost the output up

to its regulated value. As the output rises, so does the

input voltage of the MCP1650/51/52/53. This provides

a solution for 2-cell alkaline inputs for output voltages

that are less than 6V.

5.1.2

BOOTSTRAP BOOST

APPLICATIONS

For bootstrap configurations, the higher-regulated

boost output voltage is used to power the MCP1650/

51/52/53. This provides a constant higher voltage used

to drive the external MOSFET. The R-option devices

(UVLO < 2.0V) can be used for applications that need

Li-Ion Input to 5.0V 1A Regulated Output (Bootstrap) with MCP1652 Power Good Output

Schottky Diode

Vout = 5V

3.3 µH

Iout = 1A

10 Ω

V_IN

CS

EXT

FB

3

1

4

7

8

2

5

6

N-Channel

MOSFET

GND

MCP1652

0.1 µF

3.09 kΩ

C_out

SHDN

Input

Voltage

C_in

47 µF

PG

Ceramic

2.8V to 4.2V

NC

on

off

0.1Ω

Shutdown

1 kΩ

Power Good Output

FIGURE 5-2:

Bootstrap Application Circuit MCP1650/51/52/53.

with the previous boost-converter applications, the

SEPIC converter can be used in either a bootstrap or

non-bootstrap configuration. The SEPIC converter can

be a very popular topology for driving high-power

LEDs. For many LEDs, the forward voltage drop is

approximately 3.6V, which is between the maximum

and minimum voltage range of a single-cell Li-Ion

battery, as well as 3 alkaline or nickel metal batteries.

5.1.3

SEPIC CONVERTER

APPLICATIONS

In many applications, the input voltage can vary above

and below the regulated output voltage. A standard

boost converter cannot be used when the output volt-

age is below the input voltage. In this case, the

MCP1650/51/52/53 can be used as a SEPIC controller.

A SEPIC requires 2 inductors or a single coupled

inductor, in addition to an AC coupling capacitor. As

Li-Ion Input to 3.6V 3W LED Driver (SEPIC Converter)

Schottky Diode

4.7 µF

3.3 µH

IOUT = 1A

10 Ω

V_IN

CS

EXT

FB

3

1

4

7

8

2

5

6

C_OUT

N-Channel

MOSFET

3.3 µH

GND

MCP1651

47 µF

0.1 µF

2.49 kΩ

1 kΩ

Ceramic

SHDN

Input

Voltage

C_IN

47 µF

PG

2.8V to 4.2V

NC

on

0.1Ω

off

Dimming Capability

3W

LED

Power Good Output

0.2 Ω

FIGURE 5-3:

SEPIC Converter Application Circuit MCP1650/51/52/53.

DS21876A-page 16

2004 Microchip Technology Inc.

MCP1650/51/52/53

5.2.1.1

Calculations

5.2

Design Considerations

When developing switching power converter circuits,

there are numerous things to consider and the

MCP1650/51/52/53 family is no exception. The gated

oscillator architecture does provide a simple control

approach so that stabilizing the regulator output is an

easier task than that of a fixed-frequency regulator.

P_OUT= V_OUT× I_OUT

Where:

P

= 12V X 100 mA

= 1.2 Watts

OUT

The MCP1650/51/52/53 controller utilizes an external

switch and diode allowing for a very wide range of

conversion (high voltage gain and/or high current gain).

There are practical, as well as power-conversion,

topology limitations. The MCP1650/51/52/53 gated

oscillator hysteretic mode converter has similar

limitations, as do fixed-frequency boost converters.

P_IN= P_OUT⁄ (Efficiency)

Where:

P

= 1.2W/80%

IN

(80% is a good efficiency estimate)

P

= 1.5 Watts

IN

For gated oscillator hysteretic designs, the switching

frequency is not constant and will gate several pulses

to raise the output voltage. Once the upper hysteresis

threshold is reached, the gated pulses stop and the

output will coast down at a rate determined by the out-

put capacitor and the load. Using the gated oscillator

switching frequency and duty cycle, it is possible to

determine what the maximum boost ratio is for

continuous inductor current operation.

5.2.1

DESIGN EXAMPLE

Input Voltage = 2.8V to 4.2V

Output Voltage = 12V

Output Current = 100 mA

Oscillator Frequency = 750 kHz

Duty cycle = 80% for V < 3.8V

IN

Duty cycle = 56% for V > 3.8V

IN

1

V_OUT

=

------------ × V_IN

1 – D

Setting the output voltage:

R_TOP= R_BOT

V_OUT

This relationship assumes that the output load current

is significant and the boost converter is operating in

Continuous Inductor Current mode. If the load is very

light or a small boost inductance is used, higher boost

ratio’s can be achieved.

×

------------- – 1

V_FB

Where:

R

= Top Resistor Value

= Bottom Resistor Value

TOP

BOT

Calculate at minimum V :

IN

By adjusting the external resistor divider, the output

voltage of the boost converter can be set to the desired

value. Due to the RC delay caused by the resistor

divider and the device input capacitance, resistor

values greater than 100 kΩ are not recommended. The

feedback voltage is typically 1.22V.

1

V_OUTMAX

=

--------------- × 2.8

1 – 0.8

The ideal maximum output voltage is 14V. The actual

measured result will be less due to the forward voltage

drop in the boost diode, as well as other circuit losses.

For applications where the input voltage is above and

below 3.8V, another point must be checked to deter-

mine the maximum boost ratio. At 3.8V, the duty cycle

changes from 80% to 56% to minimize the peak current

in the inductor.

For this example:

R

V

=

10 kΩ

12V

1.22V

88.4 kΩ

BOT

OUT

FB

R

TOP

90.9 KΩ was selected as the closest standard value.

1

V_OUTMAX

For this case, V

=

------------------ × 3.8

1 – 0.56

= 8.63V less than the required

OUTMAX

12V output specified. The size of the inductor has to

decrease in order to operate the boost regulator in

Discontinuous Inductor Current mode.

2004 Microchip Technology Inc.

DS21876A-page 17

MCP1650/51/52/53

To determine the maximum inductance for

Discontinuous Operating mode, multiply the energy

going into the inductor every switching cycle by the

number of cycles per second (switching frequency).

This number must be greater than the maximum input

power.

5.2.2

MOSFET SELECTION

There are a couple of key consideration’s when

selecting the proper MOSFET for the boost design. A

low

R

logic-level N-channel MOSFET is

DSON

recommended.

5.2.2.1 MOSFET Selection Process.

1. Voltage Rating - The MOSFET drain-to-source

The equation for the energy flowing into the inductor is

given below. The input power to the system is equal to

energy times time.

voltage must be rated for a minimum of V

+

OUT

V

of the external boost diode. For example, in

FD

2

1

the 12V output converter, a MOSFET drain-to-

Energy = -- × L × I_PK

2

source voltage rating of 12V

+ 0.5V is

necessary. Typically, a 20V part can be used for

12V outputs.

The inductor peak current is calculated using the

equation below:

2. Logic-Level R

- The MOSFET carries

DSON

significant current during the boost cycle on

time. During this time, the peak current in the

MOSFET can get quite high. In this example, a

SOT-23 MOSFET was used with the following

ratings:

V_IN

L

I_PK= -------- × T_ON

Using a typical inductance of 3.3 µH, the peak current

in the inductor is calculated below:

IRLM2502 N-channel MOSFET

F

T

=

750 kHz

(1/F * Duty Cycle)

SW

V

= 20V (Drain Source Breakdown

BDS

ON

SW

Voltage)

I

(2.8V)

Energy (2.8V)

Power (2.8V)

905 mA

1.35 µ-Joules

1.01 Watts

PK

R

= 50 milli-ohms (V = 2.5V)

GS

DSON

= 35 milli-ohms (V = 5.0V)

GS

Q

= Total Gate Charge = 8 nC

G

At 3.8V and below, the converter can boost to 14V

while operating in the Continuous mode.

V

= 0.6V to 1.2V (Gate Source Threshold

GS

Voltage)

I

(3.8V)

=

860 mA

1.22 µ-Joules

0.914 Watts

Selecting MOSFETs with lower R

better or more efficient. Lower R

is not always

PK

DSON

typically results

Energy at 3.8V

Power

in higher total gate charge and input capacitance, slow-

ing the transition time of the MOSFET and resulting in

increased switching losses.

For this example, a 3.3 µH inductor is too large, a

2.2 µH inductor is selected.

5.2.3

DIODE SELECTION

F

= 750 kHz

SW

The external boost diode also switches on and off at the

switching frequency and requires very fast turn-on and

turn-off times. For most applications, Schottky diodes

are recommended. The voltage rating of the Schottky

diode must be rated for maximum boost output voltage.

For example, 12V output boost converter, the diode

should be rated for 12V plus margin. A 20V or 30V

Schottky diode is recommended for a 12V output appli-

cation. Schottky diodes also have low forward-drop

characteristics, another desired feature for switching

power supply applications.

T

= (1/F

* Duty Cycle)

ON

SW

I

(2.8V) = 1.36A

Energy (2.8V) = 2.02 µ-Joules

Power (2.8V) = 1.52 Watts

(3.8V) = 1.29A

Energy at 3.8V = 1.83 µ-Joules

Power = 1.4 Watts

PK

I

PK

As the inductance is lowered, the peak current drawn

from the input at all loads is increased. The best choice

of inductance for high boost ratios is the maximum

inductance value necessary while maintaining

discontinuous operation.

For lower boost-ratio applications (3.3V to 5.0V), a

3.3 µH inductor or larger is recommended. In these

cases, the inductor operates in Continuous Current

mode.

DS21876A-page 18

2004 Microchip Technology Inc.

MCP1650/51/52/53

5.2.4

INPUT/OUTPUT CAPACITOR

SELECTION

5.2.7

EXTERNAL COMPONENT

MANUFACTURES

There are no special requirements on the input or

output capacitor. For most applications, ceramic

capacitors or low effective series resistance (ESR) tan-

talum capacitors will provide lower output ripple voltage

than aluminum electrolytic. Care must be taken not to

exceed the manufacturer’s rated voltage or ripple cur-

rent specifications. Low-value capacitors are desired

because of cost and size, but typically result in higher

output ripple voltage.

The input capacitor size is dependant on the source

impedance of the application. The hysteretic

architecture of the MCP1650/51/52/53 boost converter

can draw relatively high input current peaks at certain

line and load conditions. Small input capacitors can

produce a large ripple voltage at the input of the

converter, resulting in unsatisfactory performance.

The output capacitor plays a very important role in the

performance of the hysteretic gated oscillator

converter. In some cases, using ceramic capacitors

can result in higher output ripple voltage. This is a

result of the low ESR that ceramic capacitors exhibit.

As shown in the application schematics, 100 milli-ohms

of ESR in series with the ceramic capacitor will actually

reduce the output ripple voltage and peak input cur-

rents for some applications. The selection of the capac-

itor and ESR will largely determine the output ripple

voltage.

Inductors:

®

Sumida

http://www.sumida.com/

Corporation

®

Coilcraft

http://www.coilcraft.com

http://www.bhelectronics.com

http://www.pulseeng.com/

®

BH Electronics

Pulse

®

Engineering

®

Coiltronics

http://www.cooperet.com/

Capacitors

®

MuRata

Kemet

http://www.murata.com/

http://www.kemet.com/

http://www.taiyo-yuden.com/

http://www.avx.com/

®

Taiyo-Yuden

®

AVX

MOSFETs and Diodes:

International

http://www.irf.com/

Rectifier

®

Vishay /Siliconix

http://www.vishay.com/com-

pany/brands/siliconix/

http://www.onsemi.com/

ON

®

Semiconductor

Fairchild

Semiconductor

http://www.fairchildsemi.com/

®

5.2.5

LOW BATTERY DETECTION

For low battery detection, the MCP1651 or MCP1653

device should be used. The low-battery detect feature

compares the low battery input (LBI) pin to the internal

1.22V reference. If the LBI input is below the LBI

threshold voltage, the low battery output (LBO) pin will

sink current (up to 10 mA) through the internal open-

drain MOSFET. If the LBI input voltage is above the LBI

threshold, the LBO output pin will be open or high

impedance.

5.2.6

POWER GOOD OUTPUT

For power good detection, the MCP1652 or MCP1653

device is ideal. The power good feature compares the

voltage on FB pin to the internal reference (±15%). If

the FB pin is more than 15% above or below the power

good threshold, the PG output will sink current through

the internal open-drain MOSFET. If the output of the

regulator is within ±15% of the output voltage, the PG

pin will be open or high-impedance.

2004 Microchip Technology Inc.

DS21876A-page 19

MCP1650/51/52/53

6.0

TYPICAL LAYOUT

MCP1651R

(+2.8V to +4.8V Input to +5V Output @ 1A)

Coilcraft^®

DO1813HC

TP2

+V_OUT_1

TP1

+V_IN_1

2A Power Train Path

F1

D1

L1

VR

3.3 µH

FUSE

B330ADIC VR

+5V Output @ 1A

C1

47µ

R2

49.9K

R1

100

Single-Cell Li-Ion

Input (2.8V to 4.8V)

C2

47µ

TP3

GND

R3

3.09K

R4

0.1

Q1

IRLML2502

8

2

6

5

3

1

4

7

V_IN

GND

LBI

CS

EXT

FB

TP4

GND

C3

0.1µ

R5

73.2K

0

/LBO

0

PGND

/SHDN

0

AGND AGND

PGND

R7

562

R6

1K

0

MCP1651_MSOP

R8

49.9K

PGND

TP5

/SHDN1

0

AGND

D2

LED

Low Input

0

AGND

Keep Away From Switching Section

FIGURE 6-1:

MCP1650/51/52/53 Application Schematic.

When designing the physical layout for the MCP1650/

51/52/53, the highest priority should be placing the

boost power train components in order to minimize the

size of the high current paths. It is also important to pro-

vide ground-path separation between the large-signal

power train ground and the small signal feedback path

and feature grounds. In some cases, additional filtering

The feedback resistor divider that sets the output

voltage should be considered sensitive and be routed

away from the power-switching components discussed

previously.

As shown in the diagram, R , R and the GND pin of

6

8

the MCP1650/51/52/53 should be returned to an

analog ground plane.

on the V pin is helpful to minimize MCP1650/51/52/53

IN

The analog ground plane and power ground plane

input noise.

should be connected at a single point close to the input

In this layout example, the critical power train paths are

capacitor (C ).

2

_

from input to output, +V 1 to F to C to L to Q to

IN

1

2

1

GND. Current will flow in this path when the switch (Q )

1

is turned on. When Q is turned off, the path for current

1

_

flow will quickly change to +V 1 to F to L to D to

IN

1

C to R4 to GND. When starting the layout for this appli-

1

cation, both of these power train paths should be as

short as possible. The C , Q and R GND connections

2

1

4

should all be connected to a single “Power Ground”

plane to minimize any wiring inductance.

Bold traces are used to represent high-current

connections and should be made as wide as is

practical.

R

and C is an optional filter that reduces the

1

3

switching noise on the V pin of the MCP1650/51/52/

IN

53. This should be considered for high-power

applications (> 1W) and bootstrap applications where

V

of the MCP1650/51/52/53 is supplied by the output

IN

voltage of the boost regulator.

DS21876A-page 20

2004 Microchip Technology Inc.

MCP1650/51/52/53

Figure 6-2 represents the top wiring for the MCP1650/

51/52/53 application shown.

Figure 6-3 represents the bottom wiring for the

MCP1650/51/52/53 application shown.

As shown in Figure 6-2, the high-current wiring is short

and wide. In this example, a 1 oz. copper layer is used

for both the top and bottom layers. The ground plane

connected to C2 and R4 are connected through the

vias (holes) connecting the top and bottom layer. The

feedback signal (from TP2) is wired from the output of

the regulator around the high current switching section

to the feedback voltage divider and to the FB pin of the

MCP1650/51/52/53.

Silk-screen reference designator labels are transparent

from the top of the board. The analog ground plane and

power ground plane are connected near the ground

connection of the input capacitor (C ). This prevents

2

high-power, ground-circulating currents from flowing

through the analog ground plane.

FIGURE 6-3:

Bottom Layer Wiring.

FIGURE 6-2:

Top Layer Wiring.

2004 Microchip Technology Inc.

DS21876A-page 21

MCP1650/51/52/53

7.0

PACKAGING INFORMATION

7.1

Package Marking Information

Example:

8-Lead MSOP (MCP1650, MCP1651, MCP1652)

1650SE

0448256

XXXXX

YWWNNN

Example:

10-Lead MSOP (MCP1653)

1653SE

XXXXX

0448256

YYWWNNN

Legend: XX...X Customer specific information*

YY

Year code (last 2 digits of calendar year)

Week code (week of January 1 is week ‘01’)

Alphanumeric traceability code

WW

NNN

Note: In the event the full Microchip part number cannot be marked on one line, it will

be carried over to the next line thus limiting the number of available characters

for customer specific information.

*

Standard marking consists of Microchip part number, year code, week code, and traceability code.

DS21876A-page 22

2004 Microchip Technology Inc.

MCP1650/51/52/53

8-Lead Plastic Micro Small Outline Package (UA) (MSOP)

E

E1

p

D

2

1

B

n

α

A2

A

c

φ

A1

(F)

L

β

Units

Dimension Limits

INCHES

NOM

MILLIMETERS*

MIN

MAX

MIN

NOM

8

MAX

n

p

Number of Pins

Pitch

8

.026 BSC

0.65 BSC

Overall Height

A

A2

A1

E

-

.043

-

0.85

-

1.10

Molded Package Thickness

Standoff

.030

.000

.033

-

.037

.006

0.75

0.95

0.15

0.00

Overall Width

.193 TYP.

4.90 BSC

Molded Package Width

Overall Length

E1

D

.118 BSC

3.00 BSC

Foot Length

L

.016

.024

.037 REF

.031

0.40

0.60

0.95 REF

0.80

Footprint (Reference)

Foot Angle

F

φ

c

0°

.003

.009

5°

-

8°

.009

.016

15°

0°

0.08

0.22

5°

-

8°

0.23

0.40

15°

Lead Thickness

Lead Width

.006

B

α

β

.012

Mold Draft Angle Top

Mold Draft Angle Bottom

*Controlling Parameter

Notes:

-

5°

15°

5°

15°

Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not

exceed .010" (0.254mm) per side.

JEDEC Equivalent: MO-187

Drawing No. C04-111

2004 Microchip Technology Inc.

DS21876A-page 23

MCP1650/51/52/53

10-Lead Plastic Micro Small Outline Package (UN) (MSOP)

E

E1

p

D

2

1

B

n

α

A

φ

c

A2

A1

L

(F)

β

L1

Units

Dimension Limits

INCHES

NOM

MILLIMETERS*

NOM

MIN

MAX

MIN

MAX

n

p

Number of Pins

Pitch

10

.020 TYP

10

0.50 TYP.

Overall Height

Molded Package Thickness

Standoff

A

A2

A1

E

-

.043

-

0.85

-

1.10

0.95

0.15

.030

.000

.033

-

.037

.006

0.75

0.00

Overall Width

.193 BSC

4.90 BSC

Molded Package Width

Overall Length

Foot Length

E1

D

.118 BSC

3.00 BSC

L

.016

.024

.037 REF

.031

0.40

0.60

0.95 REF

0.80

Footprint

F

φ

Foot Angle

0°

.003

.006

5°

-

8°

.009

.012

15°

0°

0.08

0.15

5°

-

8°

0.23

0.30

15°

c

Lead Thickness

Lead Width

B

α

β

.009

0.23

Mold Draft Angle Top

Mold Draft Angle Bottom

*Controlling Parameter

Notes:

-

5°

15°

5°

15°

Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not

exceed .010" (0.254mm) per side.

JEDEC Equivalent: MO-187

Drawing No. C04-021

DS21876A-page 24

2004 Microchip Technology Inc.

MCP1650/51/52/53

PRODUCT IDENTIFICATION SYSTEM

To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.

Examples:

PART NO.

X

XX

a)

MCP1650R-E/MS:

2.0V Option

Device

UVLO

Temperature Package

Range

b)

MCP1650RT-E/MS:

2.0V Option,

Tape and Reel

2.55V Option

2.55V Option,

Tape and Reel

Options

c)

d)

MCP1650S-E/MS:

MCP1650ST-E/MS:

Device

MCP1650: 750 kHz Boost Controller

MCP1651: 750 kHz Boost Controller

MCP1652: 750 kHz Boost Controller

MCP1653: 750 kHz Boost Controller

a)

b)

MCP1651R-E/MS:

MCP1651RT-E/MS:

2.0V Option

2.0V Option,

Tape and Reel

2.55V Option

2.55V Option,

Tape and Reel

c)

d)

MCP1651S-E/MS:

MCP1651ST-E/MS:

UVLO Options

R

S

=

2.0V

2.55V

a)

b)

MCP1652R-E/MS:

MCP1652RT-E/MS:

2.0V Option

Temperature Range

Package

E

=

-40°C to +125°C

2.0V Option,

Tape and Reel

2.55V Option

2.55V Option,

Tape and Reel

c)

d)

MCP1652S-E/MS:

MCP1652ST-E/MS:

MS

UN

=

Plastic Micro Small Outline (MSOP), 8-lead

Plastic Micro Small Outline (MSOP), 10-lead

a)

b)

MCP1653R-E/UN:

MCP1653RT-E/UN:

2.0V Option

2.0V Option,

Tape and Reel

2.55V Option

2.55V Option,

Tape and Reel

c)

d)

MCP1653S-E/UN:

MCP1653ST-E/UN:

Sales and Support

Data Sheets

Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and

recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:

1. Your local Microchip sales office

2. The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277

3. The Microchip Worldwide Site (www.microchip.com)

Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.

Customer Notification System

Register on our web site (www.microchip.com/cn) to receive the most current information on our products.

2004 Microchip Technology Inc.

DS21876A-page 25

MCP1650/51/52/53

NOTES:

DS21876A-page 26

2004 Microchip Technology Inc.

Note the following details of the code protection feature on Microchip devices:

•

Microchip products meet the specification contained in their particular Microchip Data Sheet.

•

Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the

intended manner and under normal conditions.

•

There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our

knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data

Sheets. Most likely, the person doing so is engaged in theft of intellectual property.

•

Microchip is willing to work with the customer who is concerned about the integrity of their code.

Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not

mean that we are guaranteeing the product as “unbreakable.”

Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our

products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts

allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.

Information contained in this publication regarding device

applications and the like is intended through suggestion only

and may be superseded by updates. It is your responsibility to

ensure that your application meets with your specifications.

No representation or warranty is given and no liability is

assumed by Microchip Technology Incorporated with respect

to the accuracy or use of such information, or infringement of

patents or other intellectual property rights arising from such

use or otherwise. Use of Microchip’s products as critical

components in life support systems is not authorized except

with express written approval by Microchip. No licenses are

conveyed, implicitly or otherwise, under any intellectual

property rights.

Trademarks

The Microchip name and logo, the Microchip logo, Accuron,

dsPIC, KEELOQ, MPLAB, PIC, PICmicro, PICSTART,

PRO MATE, PowerSmart and rfPIC are registered

trademarks of Microchip Technology Incorporated in the

U.S.A. and other countries.

AmpLab, FilterLab, microID, MXDEV, MXLAB, PICMASTER,

SEEVAL, SmartShunt and The Embedded Control Solutions

Company are registered trademarks of Microchip Technology

Incorporated in the U.S.A.

Application Maestro, dsPICDEM, dsPICDEM.net,

dsPICworks, ECAN, ECONOMONITOR, FanSense,

FlexROM, fuzzyLAB, In-Circuit Serial Programming, ICSP,

ICEPIC, Migratable Memory, MPASM, MPLIB, MPLINK,

MPSIM, PICkit, PICDEM, PICDEM.net, PICtail, PowerCal,

PowerInfo, PowerMate, PowerTool, rfLAB, Select Mode,

SmartSensor, SmartTel and Total Endurance are trademarks

of Microchip Technology Incorporated in the U.S.A. and other

countries.

Serialized Quick Turn Programming (SQTP) is a service mark

of Microchip Technology Incorporated in the U.S.A.

All other trademarks mentioned herein are property of their

respective companies.

Printed on recycled paper.

Microchip received ISO/TS-16949:2002 quality system certification for

its worldwide headquarters, design and wafer fabrication facilities in

Chandler and Tempe, Arizona and Mountain View, California in October

2003. The Company’s quality system processes and procedures are for

®

its PICmicro 8-bit MCUs, KEELOQ^®code hopping devices, Serial

EEPROMs, microperipherals, nonvolatile memory and analog

products. In addition, Microchip’s quality system for the design and

manufacture of development systems is ISO 9001:2000 certified.

2004 Microchip Technology Inc.

DS21876A-page 27

M

WORLDWIDE SALES AND SERVICE

China - Beijing

Korea

AMERICAS

Unit 706B

168-1, Youngbo Bldg. 3 Floor

Samsung-Dong, Kangnam-Ku

Seoul, Korea 135-882

Corporate Office

Wan Tai Bei Hai Bldg.

No. 6 Chaoyangmen Bei Str.

Beijing, 100027, China

Tel: 86-10-85282100

Fax: 86-10-85282104

2355 West Chandler Blvd.

Chandler, AZ 85224-6199

Tel: 480-792-7200

Tel: 82-2-554-7200 Fax: 82-2-558-5932 or

82-2-558-5934

Fax: 480-792-7277

Singapore

Technical Support: 480-792-7627

Web Address: http://www.microchip.com

China - Chengdu

200 Middle Road

#07-02 Prime Centre

Singapore, 188980

Rm. 2401-2402, 24th Floor,

Ming Xing Financial Tower

No. 88 TIDU Street

Atlanta

3780 Mansell Road, Suite 130

Alpharetta, GA 30022

Tel: 770-640-0034

Fax: 770-640-0307

Tel: 65-6334-8870 Fax: 65-6334-8850

Chengdu 610016, China

Tel: 86-28-86766200

Taiwan

Kaohsiung Branch

30F - 1 No. 8

Fax: 86-28-86766599

Boston

Min Chuan 2nd Road

Kaohsiung 806, Taiwan

Tel: 886-7-536-4818

Fax: 886-7-536-4803

China - Fuzhou

2 Lan Drive, Suite 120

Westford, MA 01886

Tel: 978-692-3848

Fax: 978-692-3821

Unit 28F, World Trade Plaza

No. 71 Wusi Road

Fuzhou 350001, China

Tel: 86-591-7503506

Fax: 86-591-7503521

Taiwan

Taiwan Branch

Chicago

11F-3, No. 207

China - Hong Kong SAR

333 Pierce Road, Suite 180

Itasca, IL 60143

Tung Hua North Road

Taipei, 105, Taiwan

Tel: 886-2-2717-7175 Fax: 886-2-2545-0139

Unit 901-6, Tower 2, Metroplaza

223 Hing Fong Road

Tel: 630-285-0071

Fax: 630-285-0075

Kwai Fong, N.T., Hong Kong

Tel: 852-2401-1200

Dallas

EUROPE

Austria

Fax: 852-2401-3431

4570 Westgrove Drive, Suite 160

Addison, TX 75001

Tel: 972-818-7423

Fax: 972-818-2924

China - Shanghai

Durisolstrasse 2

Room 701, Bldg. B

A-4600 Wels

Far East International Plaza

No. 317 Xian Xia Road

Shanghai, 200051

Austria

Detroit

Tel: 43-7242-2244-399

Fax: 43-7242-2244-393

Denmark

Tri-Atria Office Building

32255 Northwestern Highway, Suite 190

Farmington Hills, MI 48334

Tel: 248-538-2250

Tel: 86-21-6275-5700

Fax: 86-21-6275-5060

Regus Business Centre

Lautrup hoj 1-3

China - Shenzhen

Rm. 1812, 18/F, Building A, United Plaza

No. 5022 Binhe Road, Futian District

Shenzhen 518033, China

Tel: 86-755-82901380

Fax: 248-538-2260

Ballerup DK-2750 Denmark

Tel: 45-4420-9895 Fax: 45-4420-9910

Kokomo

France

2767 S. Albright Road

Kokomo, IN 46902

Tel: 765-864-8360

Fax: 765-864-8387

Parc d’Activite du Moulin de Massy

43 Rue du Saule Trapu

Batiment A - ler Etage

91300 Massy, France

Tel: 33-1-69-53-63-20

Fax: 33-1-69-30-90-79

Fax: 86-755-8295-1393

China - Shunde

Room 401, Hongjian Building, No. 2

Los Angeles

Fengxiangnan Road, Ronggui Town, Shunde

District, Foshan City, Guangdong 528303, China

Tel: 86-757-28395507 Fax: 86-757-28395571

18201 Von Karman, Suite 1090

Irvine, CA 92612

Germany

Tel: 949-263-1888

China - Qingdao

Steinheilstrasse 10

D-85737 Ismaning, Germany

Tel: 49-89-627-144-0

Fax: 49-89-627-144-44

Fax: 949-263-1338

Rm. B505A, Fullhope Plaza,

No. 12 Hong Kong Central Rd.

Qingdao 266071, China

San Jose

1300 Terra Bella Avenue

Mountain View, CA 94043

Tel: 650-215-1444

Tel: 86-532-5027355 Fax: 86-532-5027205

Italy

India

Via Quasimodo, 12

20025 Legnano (MI)

Milan, Italy

Divyasree Chambers

1 Floor, Wing A (A3/A4)

No. 11, O’Shaugnessey Road

Bangalore, 560 025, India

Tel: 91-80-22290061 Fax: 91-80-22290062

Japan

Fax: 650-961-0286

Toronto

Tel: 39-0331-742611

Fax: 39-0331-466781

Netherlands

6285 Northam Drive, Suite 108

Mississauga, Ontario L4V 1X5, Canada

Tel: 905-673-0699

Fax: 905-673-6509

P. A. De Biesbosch 14

NL-5152 SC Drunen, Netherlands

Tel: 31-416-690399

Benex S-1 6F

3-18-20, Shinyokohama

ASIA/PACIFIC

Kohoku-Ku, Yokohama-shi

Kanagawa, 222-0033, Japan

Tel: 81-45-471- 6166 Fax: 81-45-471-6122

Fax: 31-416-690340

Australia

United Kingdom

Suite 22, 41 Rawson Street

Epping 2121, NSW

Australia

505 Eskdale Road

Winnersh Triangle

Wokingham

Tel: 61-2-9868-6733

Fax: 61-2-9868-6755

Berkshire, England RG41 5TU

Tel: 44-118-921-5869

Fax: 44-118-921-5820

02/17/04

DS21876A-page 28

2004 Microchip Technology Inc.

型号:	MCP16502TAA-E/S8B
生命周期：	Active
IHS 制造商：	MICROCHIP TECHNOLOGY INC
包装说明：	HVQCCN,
Reach Compliance Code：	compliant
Factory Lead Time：	8 weeks 6 days
风险等级：	2.06
可调阈值：	YES
模拟集成电路 - 其他类型：	POWER SUPPLY SUPPORT CIRCUIT
JESD-30 代码：	S-PQCC-N32
长度：	5 mm
信道数量：	6
功能数量：	1
端子数量：	32
最高工作温度：	125 °C
最低工作温度：	-40 °C
封装主体材料：	PLASTIC/EPOXY
封装代码：	HVQCCN
封装形状：	SQUARE
封装形式：	CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
座面最大高度：	1 mm
最大供电电压 (Vsup)：	5.5 V
最小供电电压 (Vsup)：	2.7 V
标称供电电压 (Vsup)：	5 V
表面贴装：	YES
温度等级：	AUTOMOTIVE
端子形式：	NO LEAD
端子节距：	0.5 mm
端子位置：	QUAD
宽度：	5 mm
Base Number Matches：	1

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