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产品型号MCT271的概述

芯片MCT271的概述 MCT271是一款广泛使用的光耦合器件，属于工业电子与通信设备中的重要组成部分。以其高效的信号隔离和传递能力，MCT271被广泛应用于各种需要隔离与信号转换的场合。其基本工作原理是通过光电效应实现电信号的隔离与传输，能够有效地避免由于电源干扰、噪声等引起的数据误差，为系统提供可靠的信号处理能力。 MCT271的内部结构包括一个光发射器和一个光接收器。光发射器通常由发光二极管（LED）组成，而接收器则为光敏晶体管。这种布局实现了一个有效的光电隔离通道，使得输入和输出线圈能够保持电气隔离，极大地提高了设备的安全性和稳定性。其典型应用场合包括高电压系统、信号调理、数据采集、工业自动化以及开关电源等领域。芯片MCT271的详细参数 MCT271光耦合器的主要参数包括： 1. 输入电流范围：通常在5mA 到 20mA 之间，影响了输入信号的响应速度。 2. 输出电压范围...

产品型号MCT271的Datasheet PDF文件预览

Phototransistor

Industry Standard Single Channel 6 Pin DIP Optocoupler

DEVICE TYPES

Dimensions in Inches (mm)

Part No.

4N25

CTR % Min.

Part No.

MCT2

MCT2E

CTR % Min.

pin one ID

Anode

4N26

Base

.248 (6.30)

.256 (6.50)

4N27

4N28

4N35

4N36

4N37

4N38

H11A1

H11A2

H11A3

H11A4

H11A5

100

MCT270

MCT271

MCT272

MCT273

MCT274

MCT275

MCT276

MCT277

45–90

75–150

125–250

225–400

70–90

15–60

100

Cathode

Collector

Emitter

.335 (8.50)

.343 (8.70)

.300 (7.62)

typ.

.048 (0.45)

.022 (0.55)

.039

(1.00)

Min.

.130 (3.30)

.150 (3.81)

18°

4°

.114 (2.90)

.130 (3.0)

typ.

.031 (0.80) min.

3°–9°

.010 (.25)

typ.

.300–.347

.031 (0.80)

.035 (0.90)

.018 (0.45)

.022 (0.55)

FEATURES

.100 (2.54) typ.

(7.62–8.81)

• Interfaces with Common Logic Families

• Input-output Coupling Capacitance < 0.5 pF

• Industry Standard Dual-in-line 6-pin Package

• Field Effect Stable by TRIOS

• 5300 V

DESCRIPTION

This data sheet presents ﬁve families of Vishay Industry Standard

Single Channel Phototransistor Couplers. These families include the

4N25/26/27/28 types, the 4N35/36/37/38 couplers, the H11A1/A2/

A3/A4/A5, the MCT2/2E, and MCT270/271/272/273/274/275/276/

277 devices.Each optocoupler consists of Gallium Arsenide infra-

red LED and a silicon NPN phototransistor.

Isolation Test Voltage

RMS

• Underwriters Laboratory File #E52744

V_E

•

VDE #0884 Approval Available with Option 1

APPLICATIONS

• AC Mains Detection

• Reed Relay Driving

• Switch Mode Power Supply Feedback

• Telephone Ring Detection

• Logic Ground Isolation

• Logic Coupling with High Frequency Noise

Rejection

These couplers are Underwriters Laboratories (UL) listed to comply

with a 5300 V

Isolation Test Voltage. This isolation performance

RMS

is accomplished through Vishay double molding isolation manufac-

turing process. Compliance to VDE 0884 partial discharge isolation

speciﬁcation is available for these families by ordering option 1.

Phototransistor gain stability, in the presence of high isolation volt-

ages, is insured by incorporating a TRansparent lOn Shield

(TRIOS) on the phototransistor substrate. These isolation pro-

Notes:

cesses and the Vishay IS09001 Quality program results in the high-

est isolation performance available for a commercial plastic

phototransistor optocoupler.

Designing with data sheet is covered in Application Note 45.

The devices are available in lead formed conﬁguration suitable for

surface mounting and are available either on tape and reel, or in

standard tube shipping containers.

Document Number: 83717

Revision 17-August-01

www.vishay.com

2–53

Maximum Ratings T =25°C

Emitter

Reverse Voltage .......................................................................................... 6.0 V

Forward Current ........................................................................................ 60 mA

Surge Current (t≤10 µs)............................................................................... 2.5 A

Power Dissipation................................................................................... 100 mW

Detector

Collector-Emitter Breakdown Voltage........................................................... 70 V

Emitter-Base Breakdown Voltage................................................................ 7.0 V

Collector Current ....................................................................................... 50 mA

Collector Current(t <1.0 ms).................................................................... 100 mA

Power Dissipation................................................................................... 150 mW

Package

Isolation Test Voltage.......................................................................... 5300 V

RMS

Creepage .............................................................................................. ≥7.0 mm

Clearance ............................................................................................. ≥7.0 mm

Isolation Thickness between Emitter and Detector............................... ≥0.4 mm

Comparative Tracking Index per DIN IEC 112/VDE0303, part 1 .................. 175

Isolation Resistance

V =500 V, T =25°C...............................................................................10

Ω

V =500 V, T =100°C............................................................................ 10

Storage Temperature................................................................ –55°C to +150°C

Operating Temperature ............................................................ –55°C to +100°C

Junction Temperature................................................................................ 100°C

Soldering Temperature (max. 10 s, dip soldering:

distance to seating plane ≥1.5 mm) ...................................................... 260°C

4N25/26/27/28—Characteristics T =25°C

Emitter

Symbol

Min.

—

Typ.

1.3

0.1

Max.

1.5

Unit

Condition

Forward Voltage*

Reverse Current*

Capacitance

Detector

I =50 mA

—

100

—

µA

V =3.0 V

—

V =0

Breakdown Voltage*

Collector-Emitter

Emitter-Collector

Collector-Base

—

7.0

—

I =1.0 mA

CEO

ECO

CBO

I =100 µA

(dark)*

4N25/26/27

4N28

5.0

100

=10 V, (base open)

CEO

—

2.0

6.0

=10 V, (emitter open)

CBO

Capacitance, Collector-Emitter

Package

—

DC Current Transfer Ratio*

4N25/26

4N27/28

4N25

CTR

—

0.5

—

=10 V, I =10 mA

CE F

Isolation Voltage*

2500

1500

500

—

Peak, 60 Hz

4N26/27

4N28

—

Saturation Voltage, Collector-Emitter

Resistance, Input to Output*

Coupling Capacitance

—

=2.0 mA, I =50 mA

CE F

CE(sat)

100

—

GΩ

µs

V =500 V

0.5

2.0

f=1.0 MHz

Rise and Fall Times

t , t

—

I =10 mA

=10 V, R =100 Ω

* Indicates JEDEC registered values

Document Number: 83717

Revision 17-August-01

www.vishay.com

2–54

4N35/36/37/38—Characteristics T =25°C

Emitter

Symbol

Min. Typ. Max. Unit

Condition

Forward Voltage*

1.3

1.5

1.7

I =10 mA

0.9

I =10 mA, T =–55°C

Reverse Current*

Capacitance

Detector

0.1

µA

V =6.0 V

—

V =0, f=1.0 MHz

Breakdown Voltage, Collector-Emitter*

4N35/36/37

7.0

—

500

—

I =1.0 mA

CEO

4N38

—

Breakdown Voltage, Emitter-Collector*

Breakdown Voltage, Collector-Base*

—

I =100 µA

ECO

CBO

4N35/36/37

4N38

—

I =100 µA, I =1.0 µA

—

Leakage Current, Collector-Emitter*

4N35/36/37

4N38

5.0

—

=10 V, I =0

CEO

=60 V, I =0

4N35/36/37

4N38

—

µA

=30 V, I =0, T =100°C

CEO

6.0

=60 V, I =0, T =100°C

F A

Capacitance, Collector-Emitter

Package

DC Current Transfer Ratio*

4N35/36/37

4N38

CTR

100

—

=10 V, I =10 mA,

—

=1.0 V, I =20 mA

DC Current Transfer Ratio*

4N35/36/37

4N38

CTR

—

=10 V, I_F=10 mA,

T =–55 to 100°C

—

Ω

Resistance, Input to Output*

Coupling Capacitance

—

V =500 V

0.5

µs

f=1.0 MHz

Switching Time*

t_ON, t_OFF

I =2.0 mA, R =100 Ω, V =10 V

* Indicates JEDEC registered value

H11A1 through H11A5—Characteristics T =25°C

Emitter

Symbol

Min. Typ. Max. Unit

Condition

Forward Voltage

H11A1–H11A4

—

1.1

—

1.5

1.7

—

I_F=10 mA

H11A5

Reverse Current

µA

V_R=3.0 V

Capacitance

V_R=0, f=1.0 MHz

Detector

Breakdown Voltage, Collector-Emitter

Breakdown Voltage, Emitter-Collector

Breakdown Voltage, Collector-Base

Leakage Current, Collector-Emitter

Capacitance, Collector-Emitter

Package

7.0

—

I_C=1.0 mA, I =0 mA

CEO

ECO

CBO

—

I =100 µA, I =0 mA

—

I_C=10 µA, I =0 mA

5.0

6.0

V_CE=10 V, I =0 mA

CEO

—

V_CE=0

DC Current Transfer Ratio

H11A1

H11A2/3

H11A4

H11A5

CTR

—

0.4

—

V_CE=10 V, I_F=10 mA

—

Saturation Voltage, Collector-Emitter

Capacitance, Input to Output

Switching Time

—

=0.5 mA, I_F=10 mA

sat

0.5

3.0

µs

—

t_ON, t_OFF

I_C=2.0 mA, R =100 Ω, V =10 V

L CE

Document Number: 83717

Revision 17-August-01

www.vishay.com

2–55

MCT2/MCT2E—Characteristics T =25°C

Emitter

Symbol Min. Typ. Max. Unit

Condition

Forward Voltage

Reverse Current

Capacitance

Detector

—

1.1

—

1.5

—

I_F=20 mA

µA

V =3.0 V

V =0, f=1.0 MHz

Breakdown Voltage

Collector-Emitter BV

Emitter-Collector BV

7.0

—

5.0

—

I_C=1.0 mA, I_F=0 mA

CEO

ECO

CBO

I =100 µA, I_F=0 mA

Collector-Base

Collector-Emitter

Collector-Base

—

I_C=10 µA, I_F=0 mA

Leakage Current

—

=10 V, I_F=0

CBO

—

Capacitance, Collector-Emitter

Package

—

V_CE=0

DC Current Transfer Ratio

Capacitance, Input to Output

Resistance, Input to Output

Switching Time

CTR

—

V_CE=10 V, I_F=10 mA

0.5

100

3.0

GΩ

µs

—

t_ON, t_OFF

I_C=2.0 mA, R =100 Ω, V =10 V

MCT270 through MCT277—Characteristics T =25°C

Emitter

Symbol Min. Typ. Max. Unit

Condition

I_F=20 mA

V_R=3.0 V

Forward Voltage

Reverse Current

Capacitance

Detector

1.5

—

µA

V_R=0, f=1.0 MHz

Breakdown Voltage

Collector-Emitter BV

Emitter-Collector BV

7.0

—

I =10 µA, I_F=0 mA

—

CEO

ECO

CBO

I =10 µA, I_F=0 mA

Collector-Base

I_C=10 µA, I_F=0 mA

V_CE=10 V, I_F=0 mA

—

Leakage Current, Collector-Emitter

Package

CEO

DC Current Transfer Ratio

MCT270

MCT271

MCT272

MCT273

MCT274

MCT275

MCT276

MCT277

MCT271–276

MCT277

CTR

125

225

100

12.5

—

0.5

—

V_CE=10 V, I_F=10 mA

150

250

400

210

—

Current Transfer Ratio, Collector–Emitter

CTR

—

V_CE=0.4 V, I_F=16 mA

—

Collector–Emitter Saturation Voltage

Capacitance, Input to Output

Resistance, Input to Output

Switching Time

0.4

—

I_CE=2.0 mA, I_F=16 mA

—

sat

—

Ω

—

V_IO=500 VDC

MCT270/272

MCT271

—

t_ON, t_OFF

µs

I =2.0 mA,

R =100 Ω,

—

7.0

_CE=5.0 V

MCT273

—

MCT274

—

MCT275/277

MCT276

—

3.5

Document Number: 83717

Revision 17-August-01

www.vishay.com

2–56

Figure 1. Forward Voltage vs. Forward Current

Figure 4. Normalized Non-saturated and Saturated

CTR, T =70°C vs. LED Current

1.4

1.3

1.5

Normalized to:

Vce=10 V, I =10 mA, T =25°C

= –55°C

= 25°C

CTRce(sat) Vce=0.4 V

1.2

1.1

1.0

0.9

0.8

0.7

1.0

0.5

0.0

T =70°C

= 85°C

NCTR(SAT)

NCTR

100

- LED Current - mA

- Forward Current - mA

Figure 2. Normalized Non-saturated and Saturated

Figure 5. Normalized Non-saturated and Saturated

CTR, T =25°C vs. LED Current

CTR, T =85°C vs. LED Current

1.5

Normalized to:

Vce=10 V, I =10 mA, T =25°C

CTRce(sat) Vce=0.4 V

Vce=10 V, I =10 mA, T =25°C

CTRce(sat) Vce = 0.4 V

1.0

0.5

0.0

1.0

0.5

0.0

T =25°C

T =85°C

NCTR(SAT)

NCTR

NCTR(SAT)

NCTR

100

- LED Current - mA

Figure 3. Normalized Non-saturated and Saturated

Figure 6. Collector-emitter Current vs. Temperature

and LED Current

CTR, T =50°C vs. LED Current

1.5

Normalized to:

Vce=10 V, I =10 mA, T =25°C

CTRce(sat) Vce=0.4 V

50°C

1.0

0.5

0.0

T =50°C

70°C

25°C

85°C

NCTR(SAT)

NCTR

100

- LED Current - mA

Document Number: 83717

Revision 17-August-01

www.vishay.com

2–57

Figure 7. Collector-emitter Leakage Current vs.Temp.

Figure 10. Normalized Non-saturated HFE vs. Base

Current and Temperature

1.2

70°C

50°C

1.0

25°C

–20°C

= 10 V

0.8

Typical

Normalized to:

Ib=20 µA, Vce=10 V, T =25°C

0.6

0.4

–1

–2

–20

100

1000

Ib - Base Current - µA

- Ambient Temperature - °C

Figure 11. Normalized HFE vs. Base Current and Temp.

Figure 8. Normalized CTRcb vs. LED Current and Temp.

1.5

Normalized to:

Vce=10 V, Ib=20 µA

Normalized to:

Vcb=9.3 V, I =10 mA, T =25°C

50°C

T =25°C

70°C

1.0

0.5

0.0

25°C

–20°C

0.5

0.0

25°C

50°C

70°C

Vce=0.4 V

100

1000

100

Ib - Base Current - µA

- LED Current - mA

Figure 12. Propagation Delay vs. Collector Load Resistor

Figure 9. Normalized Photocurrent vs. I and Temp.

1000

100

2.5

I =10 mA, T =25°C

Normalized to:

=5.0 V, Vth=1.5 V

I =10 mA, T =25°C

PHL

2.0

0.1

1.5

1.0

Nib, T =–20°C

PLH

Nib, T =25°C

Nib, T = 50°C

Nib, T =70°C

0.01

100

- LED Current - mA

RL - Collector Load Resistor - kΩ

Figure 14. Switching Schematic

Figure 13. Switching Timing

I_F

= 5.0 V

F=10 KHz,

DF=50%

t_D

t_R

V_O

t_PLH

I =10 mA

=1.5 V

V_TH

t_F

t_S

t_PHL

Document Number: 83717

Revision 17-August-01

www.vishay.com

2–58

MCT271相关文章

配单直通车

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MCT271产品参数

型号:	MCT271
是否Rohs认证：	不符合
生命周期：	Transferred
IHS 制造商：	QT OPTOELECTRONICS
Reach Compliance Code：	unknown
风险等级：	5.74
Is Samacsys：	N
其他特性：	UL RECOGNIZED
Coll-Emtr Bkdn Voltage-Min：	30 V
配置：	SINGLE
标称电流传输比：	67%
最大暗电源：	50 nA
最大正向电流：	0.06 A
最大绝缘电压：	5300 V
JESD-609代码：	e0
元件数量：	1
最高工作温度：	100 °C
最低工作温度：	-55 °C
光电设备类型：	TRANSISTOR OUTPUT OPTOCOUPLER
端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

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