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MDF13N65B

N-Channel MOSFET 650V, 14A, 0.46Ω

General Description

Features

These N-channel MOSFET are produced using advanced

MagnaChip’s MOSFET Technology, which provides low on-

state resistance, high switching performance and excellent

quality.



V_DS= 650V

I_D= 14A

R_DS(ON)≤ 0.46Ω

@ V_GS= 10V

Applications

These devices are suitable device for SMPS, high Speed

switching and general purpose applications.



Power Supply

PFC

High Current, High Speed Switching

G

TO-220F

MDF Series

S

Absolute Maximum Ratings (Ta = 25^oC)

Characteristics

Drain-Source Voltage

Symbol

V_DSS

Rating

650

Unit

V

Gate-Source Voltage

V_GSS

±30

V

T_C=25^oC

Continuous Drain Current

14*

A

I_D

T_C=100^oC

8.8*

A

Pulsed Drain Current⁽¹⁾

I_DM

P_D

56*

A

T_C=25^oC

36.7

0.29

23.1

4.5

W

Power Dissipation

Derate above 25 ^oC

W/ ^oC

mJ

V/ns

mJ

^oC

Repetitive Avalanche Energy⁽¹⁾

Peak Diode Recovery dv/dt⁽³⁾

Single Pulse Avalanche Energy⁽⁴⁾

E_AR

dv/dt

E_AS

800

Junction and Storage Temperature Range

* Id limited by maximum junction temperature

T_J, T_stg

-55~150

Thermal Characteristics

Characteristics

Thermal Resistance, Junction-to-Ambient⁽¹⁾

Thermal Resistance, Junction-to-Case⁽¹⁾

Symbol

R_θJA

Rating

62.5

Unit

^oC/W

R_θJC

3.4

1

Jun. 2011 Version 1.3

MagnaChip Semiconductor Ltd.

Ordering Information

Part Number

Temp. Range

-55~150^oC

Package

Packing

RoHS Status

MDF13N65BTH

TO-220F

Tube

Halogen Free

Electrical Characteristics (Ta =25^oC)

Characteristics

Static Characteristics

Symbol

Test Condition

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Drain Cut-Off Current

Gate Leakage Current

Drain-Source ON Resistance

Forward Transconductance

Dynamic Characteristics

Total Gate Charge

BV_DSS

V_GS(th)

I_DSS

I_D= 250μA, V_GS= 0V

V_DS= V_GS, I_D= 250μA

V_DS= 600V, V_GS= 0V

V_GS= ±30V, V_DS= 0V

V_GS= 10V, I_D= 7A

650

2.0

-

4.0

1

V

-

μA

nA

Ω

I_GSS

-

100

0.46

-

R_DS(ON)

g_fs

0.40

3.7

V_DS= 30V, I_D= 7A

-

S

Q_g

Q_gs

Q_gd

C_iss

C_rss

C_oss

t_d(on)

t_r

-

54

13

-

Gate-Source Charge

V_DS= 520V, I_D= 14.0A, V_GS= 10V⁽³⁾

V_DS= 25V, V_GS= 0V, f = 1.0MHz

nC

pF

Gate-Drain Charge

21

Input Capacitance

2400

12.8

243

32

Reverse Transfer Capacitance

Output Capacitance

Turn-On Delay Time

Rise Time

81

V_GS= 10V, V_DS= 325V, I_D= 14.0A,

nS

R_G= 25Ω⁽³⁾

Turn-Off Delay Time

t_d(off)

t_f

204

76

Fall Time

Drain-Source Body Diode Characteristics

Maximum Continuous Drain to

Source Diode Forward Current

I_S

-

14

-

A

Source-Drain Diode Forward Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

V_SD

t_rr

I_S= 14.0A, V_GS= 0V

-

1.4

V

377

8.2

-

nS

μC

I_F= 14.A, dl/dt = 100A/μs⁽³⁾

Q_rr

Note :

1. Pulse width is based on R_θJC& R_θJAand the maximum allowed junction temperature of 150°C.

2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature T_J(MAX)=150°C.

3. I_SD≤7.0A, di/dt≤200A/us, V ≤BVdss, R =25Ω, Starting T_J=25°C

DD

g

4. L=7.6mH, I_AS=14.0A, V_DD=50V, R =25Ω, Starting T_J=25°C,

g

2

Jun. 2011 Version 1.3

MagnaChip Semiconductor Ltd.

0.9

0.8

0.7

0.6

0.5

V_gs=4.5V

=5.0V

=5.5V

=6.0V

=6.5V

=7.0V

=7.5V

=8.0V

=10.0V

=15.0V

30

25

20

15

10

5

V_GS=10.0V

Notes

1. 250㎲ Pulse Test

V_GS=20V

2. T_C=25

℃

0

5

10

15

20

25

0

3

6

9

12

15

18

21

24

27

30

33

36

V_DS,Drain-Source Voltage [V]

I_D,Drain Current [A]

Fig.2 On-Resistance Variation with

Drain Current and Gate Voltage

Fig.1 On-Region Characteristics

3.0

2.5

2.0

1.5

1.0

0.5

0.0

1.2

※ Notes :

1. V_GS= 10 V

2. I_D= 7 A

※ Notes :

1. V_GS= 0 V

2. I_D= 250㎂

1.1

1.0

0.9

0.8

-100

-50

0

50

100

150

200

-50

0

50

100

150

200

T_J, Junction Temperature [^oC]

Fig.3 On-Resistance Variation with

Temperature

Fig.4 Breakdown Voltage Variation vs.

Temperature

* Notes ;

※ Notes :

1. Vds=30V

1. V_GS= 0 V

2.250s Pulse test

10

-55

℃

150

℃

150

℃

25

℃

25

℃

1

0.0

2

4

6

8

0.2

0.4

0.6

0.8

1.0

1.2

V_GS[V]

V_SD, Source-Drain Voltage [V]

Fig.5 Transfer Characteristics

Fig.6 Body Diode Forward Voltage

Variation with Source Current and

Temperature

3

Jun. 2011 Version 1.3

MagnaChip Semiconductor Ltd.

5000

4000

3000

2000

1000

0

C_iss= C_gs+ C_gd(C_ds= shorted)

C_oss= C_ds+ C_gd

C_rss= C_gd

10

8

※ Note : I_D= 14.0A

C_oss

130V

325V

520V

C_iss

6

4

※ Notes ;

1. V_GS= 0 V

2. f = 1 MHz

C_rss

2

0

1

10

0

10

20

30

40

50

60

V_DS, Drain-Source Voltage [V]

Q_G, Total Gate Charge [nC]

Fig.7 Gate Charge Characteristics

Fig.8 Capacitance Characteristics

10²

10¹

10⁰

10^-1

10^-2

Operation in This Area

is Limited by R _DS(on)

10 s

D=0.5

100 s

1 ms

10 ms

100 ms

10⁰

0.2

0.1

1s

DC

0.05

0.02

0.01

10^-1

※ Notes :

Duty Factor, D=t₁/t₂

Single Pulse

T_J=Max rated

PEAK T_J= P_DM* Z_{θ JC}* R_θ(t) + T_C

JC

R_Θ=3.4 /W

℃

JC

single pulse

10^-3

T_C=25

℃

10^-2

10^-1

10⁰

10¹

10²

10^-5

10^-4

10^-2

10^-1

10⁰

10¹

V_DS, Drain-Source Voltage [V]

t₁, Rectangular Pulse Duration [sec]

Fig.9 Maximum Safe Operating Area

Fig.10 Transient Thermal Response Curve

14

10000

single Pulse

R_thJC= 3.4 /W

12

10

8

℃

T_C= 25

℃

8000

6000

4000

2000

0

6

4

2

0

25

50

75

100

125

150

1E-5

1E-4

1E-3

0.01

0.1

1

10

T_C, Case Temperature [ ]

℃

Pulse Width (s)

Fig.11 Single Pulse Maximum Power

Dissipation

Fig.12 Maximum Drain Current vs. Case

Temperature

4

Jun. 2011 Version 1.3

MagnaChip Semiconductor Ltd.

Physical Dimensions

3 Leads, TO-220F

Dimensions are in millimeters unless otherwise specified

Symbol

Min

4.50

0.63

1.15

0.33

15.47

9.60

Nom

Max

4.93

0.91

1.47

0.63

A

b

b1

C

D

E

16.13

10.71

e

2.54

F

G

L

L1

Q

2.34

6.48

12.24

2.79

2.52

3.10

3.00

2.84

6.90

13.72

3.67

2.96

3.50

3.55

Q1

￠R

5

Jun. 2011 Version 1.3

MagnaChip Semiconductor Ltd.

DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power

generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be

expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such

applications do so at their own risk and agree to fully defend and indemnify Seller.

MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility

for use of any circuitry other than circuitry entirely included in a MagnaChip product.

Semiconductor Ltd.

is a registered trademark of MagnaChip

6

Jun. 2011 Version 1.3

MagnaChip Semiconductor Ltd.

型号:	MDF14A-10P-2.5DS
是否Rohs认证：	不符合
生命周期：	Obsolete
IHS 制造商：	HIROSE ELECTRIC CO LTD
Reach Compliance Code：	unknown
风险等级：	5.82
Is Samacsys：	N
其他特性：	100 PCS. PER BAG
主体宽度：	0.217 inch
主体深度：	0.217 inch
主体长度：	0.984 inch
主体/外壳类型：	RECEPTACLE
连接器类型：	BOARD CONNECTOR
联系完成配合：	NOT SPECIFIED
触点性别：	MALE
触点材料：	NOT SPECIFIED
触点模式：	RECTANGULAR
触点样式：	RND PIN-SKT
DIN 符合性：	NO
介电耐压：	1500VAC V
滤波功能：	NO
IEC 符合性：	NO
绝缘电阻：	1000000000 Ω
绝缘体颜色：	BEIGE
绝缘体材料：	POLYAMIDE
MIL 符合性：	NO
制造商序列号：	MDF14A
插接触点节距：	0.098 inch
混合触点：	NO
安装方式：	RIGHT ANGLE
安装类型：	BOARD
连接器数：	ONE
PCB行数：	1
装载的行数：	1
最高工作温度：	85 °C
最低工作温度：	-30 °C
选件：	GENERAL PURPOSE
PCB接触模式：	RECTANGULAR
额定电流（信号）：	5 A
参考标准：	UL
可靠性：	COMMERCIAL
子类别：	Headers and Edge Type Connectors
端子长度：	0.13 inch
端子节距：	2.5 mm
端接类型：	SOLDER
触点总数：	10
UL 易燃性代码：	94V-0
Base Number Matches：	1

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