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产品型号MDF1922的Datasheet PDF文件预览

MDF1922  
Single N-channel Trench MOSFET 100V, 40A, 8.7mΩ  
General Description  
Features  
The MDF1922 uses advanced MagnaChips MOSFET  
Technology, which provides high performance in on-state  
resistance, fast switching performance and excellent  
quality. MDF1922 is suitable device for Synchronous  
Rectification for Server / Adapter and general purpose  
applications.  
VDS = 100V  
ID = 40A @VGS = 10V  
RDS(ON)  
< 8.7 mΩ @VGS = 10V  
100% UIL Tested  
G
G
D
S
TO-220F  
S
Absolute Maximum Ratings (Ta = 25oC)  
Characteristics  
Drain-Source Voltage  
Symbol  
VDSS  
Rating  
Unit  
V
100  
±20  
40  
Gate-Source Voltage  
VGSS  
V
TC=25oC  
Continuous Drain Current (1)  
TC=100oC  
ID  
26  
A
Pulsed Drain Current  
IDM  
160  
28  
TC=25oC  
Power Dissipation  
PD  
W
TC=100oC  
12  
(2)  
Single Pulse Avalanche Energy  
EAS  
400  
-55~150  
mJ  
oC  
Junction and Storage Temperature Range  
TJ, Tstg  
Thermal Characteristics  
Characteristics  
Thermal Resistance, Junction-to-Ambient (1)  
Thermal Resistance, Junction-to-Case  
Symbol  
RθJA  
Rating  
62.5  
Unit  
oC/W  
RθJC  
4.5  
1
Jan. 2015. Rev 1.0  
MagnaChip Semiconductor Ltd.  
Ordering Information  
Part Number  
Temp. Range  
Package  
Packing  
RoHS Status  
MDF1922TH  
-55~150oC  
TO-220F  
Tube  
Halogen Free  
Electrical Characteristics (TJ =25oC)  
Characteristics  
Static Characteristics  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
Drain-Source Breakdown Voltage  
Gate Threshold Voltage  
Drain Cut-Off Current  
BVDSS  
VGS(th)  
IDSS  
ID = 250μA, VGS = 0V  
VDS = VGS, ID = 250μA  
VDS = 80V, VGS = 0V  
VGS = ±20V, VDS = 0V  
VGS = 10V, ID = 50A  
VDS = 10V, ID = 50A  
100  
-
-
-
V
2.0  
4.0  
1.0  
±0.1  
8.7  
-
-
-
-
-
-
μA  
Gate Leakage Current  
IGSS  
-
Drain-Source ON Resistance  
Forward Transconductance  
Dynamic Characteristics  
Total Gate Charge  
RDS(ON)  
gfs  
7.3  
60  
mΩ  
S
Qg  
Qgs  
Qgd  
Ciss  
Crss  
Coss  
td(on)  
tr  
-
-
-
-
-
-
-
-
-
-
-
54.5  
16.4  
10.3  
3500  
16  
-
-
-
-
-
-
-
-
-
-
-
VDS = 50V, ID = 50A,  
VGS = 10V  
Gate-Source Charge  
nC  
pF  
Gate-Drain Charge  
Input Capacitance  
VDS = 40V, VGS = 0V,  
f = 1.0MHz  
Reverse Transfer Capacitance  
Output Capacitance  
720  
Turn-On Delay Time  
13.8  
13.0  
39.0  
14.0  
2.5  
Rise Time  
VGS = 10V, VDS = 50V,  
ID = 50A , RG = 3.0Ω  
ns  
Turn-Off Delay Time  
td(off)  
tf  
Fall Time  
Gate Resistance  
Rg  
f=1 MHz  
Ω
Drain-Source Body Diode Characteristics  
Source-Drain Diode Forward Voltage  
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
VSD  
trr  
IS = 50A, VGS = 0V  
-
-
-
0.9  
62.0  
197.0  
1.2  
V
ns  
nC  
IF = 50A, dl/dt = 150A/μs  
Qrr  
Note :  
1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25is silicon limited  
2. EAS is tested at starting Tj = 25, L = 3.5mH, IAS = 15.0A, VGS = 10V.  
2
Jan. 2015. Rev 1.0  
MagnaChip Semiconductor Ltd.  
200  
180  
160  
140  
120  
100  
80  
7.6  
7.5  
7.4  
7.3  
7.2  
7.1  
7.0  
10 V  
8.0 V  
7.0 V  
6.0 V  
5.0 V  
VGS = 10V  
4.5 V  
60  
40  
4.0 V  
20  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
0
1
2
3
4
5
6
7
8
ID, Drain Current [A]  
VDS, Drain-Source Voltage [V]  
Fig.2 On-Resistance Variation with  
Drain Current and Gate Voltage  
Fig.1 On-Region Characteristics  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
Notes :  
1. VGS = 10 V  
2. ID = 50 A  
Notes :  
ID = 50A  
TA = 25℃  
0
3
4
5
6
7
8
9
10  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VGS, Gate to Source Volatge [V]  
TJ, Junction Temperature [oC]  
Fig.3 On-Resistance Variation with  
Temperature  
Fig.4 On-Resistance Variation with  
Gate to Source Voltage  
80  
70  
60  
50  
40  
30  
20  
10  
0
Notes :  
VDS = 10 V  
Notes :  
VGS = 0V  
80  
60  
40  
20  
0
TC = 25oC  
TC = 25℃  
0.0  
0.3  
0.6  
0.9  
1.2  
1.5  
0
1
2
3
4
5
6
7
8
VSD, Source-Drain Voltage [V]  
VGS, Gate-Source Voltage [V]  
Fig.5 Transfer Characteristics  
Fig.6 Body Diode Forward Voltage  
Variation with Source Current and  
Temperature  
3
Jan. 2015. Rev 1.0  
MagnaChip Semiconductor Ltd.  
5000  
4000  
3000  
2000  
1000  
0
10  
8
Ciss = Cgs + Cgd (Cds = shorted)  
Coss = Cds + Cgd  
Note : ID = 50A  
VDS = 50V  
Crss = Cgd  
Ciss  
6
Notes ;  
Coss  
1. VGS = 0 V  
2. f = 1 MHz  
4
2
Crss  
0
0
5
10  
15  
20  
25  
30  
35  
40  
0
10  
20  
30  
40  
50  
60  
VDS, Drain-Source Voltage [V]  
QG, Total Gate Charge [nC]  
Fig.7 Gate Charge Characteristics  
Fig.8 Capacitance Characteristics  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
102  
100 us  
101  
100  
10-1  
1 ms  
Operation in This Area  
is Limited by R DS(on)  
10 ms  
100 ms  
1000 ms  
DC  
Single Pulse  
TJ=Max rated  
TC=25  
0
10-1  
100  
101  
102  
25  
50  
75  
100  
125  
150  
VDS, Drain-Source Voltage [V]  
TC, Case Temperature []  
Fig.10 Maximum Drain Current vs.  
Case Temperature  
Fig.9 Maximum Safe Operating Area  
101  
100  
D=0.5  
0.2  
0.1  
0.05  
10-1 0.02  
0.01  
10-2  
Notes :  
Duty Factor, D=t1/t2  
PEAK TJ = PDM * Zθ JC* Rθ (t) + TC  
10-3  
single pulse  
JC  
10-4  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
102  
t1, Rectangular Pulse Duration [sec]  
Fig.11 Transient Thermal Response  
Curve  
4
Jan. 2015. Rev 1.0  
MagnaChip Semiconductor Ltd.  
Package Dimension  
3 Leads, TO-220F  
Dimensions are in millimeters unless otherwise specified  
5
Jan. 2015. Rev 1.0  
MagnaChip Semiconductor Ltd.  
DISCLAIMER:  
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power  
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be  
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such  
applications do so at their own risk and agree to fully defend and indemnify Seller.  
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility  
for use of any circuitry other than circuitry entirely included in a MagnaChip product.  
Semiconductor Ltd.  
is a registered trademark of MagnaChip  
6
Jan. 2015. Rev 1.0  
MagnaChip Semiconductor Ltd.  
配单直通车
MDF1933TH产品参数
型号:MDF1933TH
是否Rohs认证: 符合
生命周期:Active
包装说明:,
Reach Compliance Code:unknown
风险等级:5.76
峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1
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