MJD18002D2T4G中文资料应用文章市场行情现货热卖使用介绍-中国IC网-芯三七

MJD18002D2

Bipolar NPN Transistor

High Speed, High Gain Bipolar NPN

Power Transistor with Integrated

Collector−Emitter Diode and Built−In

Efficient Antisaturation Network

The MJD18002D2 is a state−of−the−art high speed, high gain

bipolar transistor (H2BIP). Tight dynamic characteristics and lot to lot

minimum spread ( 150 ns on storage time) make it ideally suitable for

light ballast applications. Therefore, there is no longer a need to

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POWER TRANSISTOR

2 AMPERES

1000 VOLTS, 50 WATTS

guarantee an h window.

FE

Features

• Low Base Drive Requirement

• High Peak DC Current Gain (55 Typical) @ I = 100 mA

C

• Extremely Low Storage Time Min/Max Guarantees Due to the

H2BIP Structure which Minimizes the Spread

• Integrated Collector−Emitter Free Wheeling Diode

• Fully Characterized and Guaranteed Dynamic V

CEsat

• Characteristics Make It Suitable for PFC Application

• Epoxy Meets UL 94 V−0 @ 0.125 in

4

• ESD Ratings: Human Body Model, 3B u 8000 V

Machine Model, C u 400 V

2

1

3

• Six Sigma® Process Providing Tight and Reproductible Parameter

Spreads

DPAK

CASE 369C

STYLE 1

• Pb−Free Package is Available

MAXIMUM RATINGS

Rating

Symbol

Value

450

Unit

Vdc

Adc

Collector−Emitter Sustaining Voltage

Collector−Base Breakdown Voltage

Collector−Emitter Breakdown Voltage

Emitter−Base Voltage

V

CEO

CBO

MARKING DIAGRAM

1000

11

V

CES

EBO

YWW

180

Collector Current − Continuous

Collector Current − Peak (Note 1)

I

2.0

5.0

C

I

CM

02D2G

Base Current

− Continuous

I

1.0

2.0

Adc

B

I

BM

− Peak (Note 1)

THERMAL CHARACTERISTICS

Characteristic

Y

WW

= Year

= Work Week

Symbol

Value

Unit

18002D2 = Device Code

Total Device Dissipation @ T = 25°C

P

50

0.4

W

W/°C

C

D

G

= Pb−Free Package

Derate above 25°C

Operating and Storage Temperature Range T , T

−65 to +150

5.0

°C

°C/W

°C

J

stg

ORDERING INFORMATION

Thermal Resistance, Junction−to−Case

Thermal Resistance, Junction−to−Ambient

R

q

JC

JA

L

†

Device

Package

Shipping

R

71.4

q

MJD18002D2T4

DPAK

3000/Tape & Reel

Maximum Lead Temperature for Soldering

T

260

Purposes: 1/8″ from Case for 5 seconds

MJD18002D2T4G

DPAK

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle = 10%.

©

Semiconductor Components Industries, LLC, 2006

1

Publication Order Number:

January, 2006 − Rev. 2

MJD18002D2/D

MJD18002D2

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

C

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (I = 100 mA, L = 25 mH)

V

450

1000

11

570

1100

14

−

Vdc

C

CEO(sus)

Collector−Base Breakdown Voltage (I

= 1 mA)

V

CBO

EBO

CEO

Emitter−Base Breakdown Voltage (I

= 1 mA)

−

Vdc

EBO

Collector Cutoff Current (V = Rated V

, I = 0)

I

−

100

mAdc

CE

CEO

B

Collector Cutoff Current (V = Rated V

, V = 0)

@ T = 25°C

I

−

100

500

100

CE

CES

EB

C

CES

@ T = 125°C

C

(V = 500 V, V = 0)

@ T = 125°C

CE

EB

C

Emitter−Cutoff Current (V = 10 Vdc, I = 0)

I

−

500

mAdc

EB

C

EBO

ON CHARACTERISTICS

Base−Emitter Saturation Voltage

V

Vdc

BE(sat)

(I = 0.4 Adc, I = 40 mAdc)

@ T = 25°C

0.78

0.87

1.0

1.1

C

B

C

−

(I = 1.0 Adc, I = 0.2 Adc)

@ T = 25°C

C

B

C

Collector−Emitter Saturation Voltage

(I = 0.4 Adc, I = 40 mAdc)

@ T = 25°C

−

0.36

0.50

0.6

1.0

Vdc

C

CE(sat)

@ T = 125°C

C

B

C

(I = 1.0 Adc, I = 0.2 Adc)

@ T = 25°C

−

0.40

0.65

0.75

1.2

C

B

C

@ T = 125°C

C

DC Current Gain

@ T = 25°C

h

FE

14

8.0

25

15

−

C

−

(I = 0.4 Adc, V = 1.0 Vdc)

C

@ T = 125°C

CE

C

(I = 1.0 Adc, V = 1.0 Vdc)

@ T = 25°C

6.0

4.0

10

6.0

−

C

CE

C

@ T = 125°C

C

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth (I = 0.5 Adc, V = 10 Vdc, f = 1 MHz)

f

t

−

13

50

−

MHz

pF

C

CE

Output Capacitance (V = 10 Vdc, I = 0, f = 1 MHz)

C

ob

100

500

CB

E

Input Capacitance (V = 8 Vdc)

C

ib

340

pF

EB

DIODE CHARACTERISTICS

Forward Diode Voltage

V

Vdc

ns

EC

(I = 1.0 Adc)

EC

@ T = 25°C

−

1.2

1.0

0.6

1.5

1.3

−

C

(I = 0.4 Adc)

EC

@ T = 25°C

C

@ T = 125°C

C

Forward Recovery Time

t

fr

(I = 0.4 Adc, di/dt = 10 A/ms)

@ T = 25°C

−

517

480

−

F

C

(I = 1.0 Adc, di/dt = 10 A/ms)

F

@ T = 25°C

C

DYNAMIC SATURATION VOLTAGE

V

−

7.4

2.5

−

V

@ 1 ms @ T = 25°C

I

= 0.4 Adc

C

CE(dsat)

C

I

= 40 mA

B1

Dynamic Saturation Voltage

Determinated 1 ms and 3 ms

@ 3 ms @ T = 25°C

C

V

= 300 Vdc

CC

respectively after rising I reaches

B1

@ 1 ms @ T = 25°C

11.7

1.3

I

= 1 Adc

C

90% of final I

B1

= 0.2 A

B1

@ 3 ms @ T = 25°C

C

V

= 300 Vdc

CC

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2

MJD18002D2

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

C

Characteristic

Symbol

Min

Typ

Max

Unit

SWITCHING CHARACTERISTICS: Resistive Load (D.C.S. 10%, Pulse Width = 40 ms)

Turn−on Time

Turn−off Time

Turn−on Time

Turn−off Time

@ T = 25°C

t

−

225

375

350

−

ns

ms

ns

ms

C

on

I

= 0.4 Adc, I = 40 mAdc

B1

@ T = 125°C

C

I

V

= 200 mAdc

B2

@ T = 25°C

t

0.8

−

1.5

1.1

−

C

off

= 300 Vdc

CC

@ T = 125°C

C

@ T = 25°C

t

−

100

94

150

−

C

on

I

= 1.0 Adc, I = 0.2 Adc

B1

@ T = 125°C

C

I

= 0.5 Adc

= 300 Vdc

B2

@ T = 25°C

t

0.95

−

1.5

1.25

−

C

off

V

CC

@ T = 125°C

C

SWITCHING CHARACTERISTICS: Inductive Load (V

= 300 V, V = 15 V, L = 200 mH)

CC

clamp

Fall Time

@ T = 25°C

t

−

130

120

175

−

ns

ms

ns

ms

ns

ms

ns

C

f

@ T = 125°C

C

I

B1

= 0.4 Adc

= 40 mAdc

= 0.2 Adc

C

Storage Time

Cross−over Time

Fall Time

@ T = 25°C

t

0.4

−

0.7

−

C

s

c

I

@ T = 125°C

C

I

B2

@ T = 25°C

−

110

100

175

−

C

@ T = 125°C

C

@ T = 25°C

t

−

130

140

175

−

C

f

@ T = 125°C

C

I

B1

B2

= 0.8 Adc

= 160 mAdc

C

Storage Time

Cross−over Time

Fall Time

@ T = 25°C

t

2.1

−

3.0

2.4

−

C

s

c

I

@ T = 125°C

C

@ T = 25°C

−

275

350

−

C

@ T = 125°C

C

@ T = 25°C

t

−

100

150

−

C

f

@ T = 125°C

C

I

= 1.0 Adc

= 0.2 Adc

= 0.5 Adc

C

Storage Time

Cross−over Time

@ T = 25°C

t

−

1.05

1.45

1.2

−

C

s

c

I

B1

B2

@ T = 125°C

C

@ T = 25°C

−

100

115

150

−

C

@ T = 125°C

C

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MJD18002D2

Typical Static Characteristics

100

80

100

V

= 1 V

V

= 5 V

CE

80

60

40

T = 125°C

J

60

25°C

40

−20°C

20

0

20

0

0.001

0.01

0.1

1

10

0.001

0.01

0.1

1

10

I , COLLECTOR CURRENT (AMPS)

C

I , COLLECTOR CURRENT (AMPS)

C

Figure 1. DC Current Gain @ 1 V

Figure 2. DC Current Gain @ 5 V

4

3

2

100

10

T = 25°C

J

I /I = 20

C

B

2 A

1.5 A

1 A

1

400 mA

25°C

1

0

T = 125°C

J

I

= 200 mA

C

−20°C

0.1

0.001

0.01

0.1

1

10

0.001

0.01

0.1

1

10

I , BASE CURRENT (AMPS)

B

I , COLLECTOR CURRENT (AMPS)

C

Figure 3. Collector Saturation Region

Figure 4. Collector−Emitter Saturation Voltage

100

10

I /I = 10

I /I = 5

C

B

C

B

1

25°C

T = 125°C

J

T = 125°C

J

−20°C

0.001

−20°C

0.001

0.1

0.01

0.1

1

10

0.01

0.1

1

10

I , COLLECTOR CURRENT (AMPS)

C

I , COLLECTOR CURRENT (AMPS)

C

Figure 5. Collector−Emitter Saturation Voltage

Figure 6. Collector−Emitter Saturation Voltage

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4

MJD18002D2

Typical Static Characteristics

10

I /I = 5

I /I = 10

C B

C

B

1

−20°C

25°C

−20°C

25°C

T = 125°C

J

T = 125°C

J

0.1

0.001

0.01

0.1

1

10

0.001

0.01

0.1

1

10

I , COLLECTOR CURRENT (AMPS)

C

I , COLLECTOR CURRENT (AMPS)

C

Figure 7. Base−Emitter Saturation Region

I_C/I_B= 5

Figure 8. Base−Emitter Saturation Region

I_C/I_B= 10

10

I /I = 20

C

B

V

= −20°C

EC(V)

1

−20°C

25°C

125°C

25°C

T = 125°C

J

0.1

0.001

0.01

0.1

1

10

0.01

0.1

1

10

I , COLLECTOR CURRENT (AMPS)

C

REVERSE EMITTER−COLLECTOR CURRENT (AMPS)

Figure 9. Base−Emitter Saturation Region

I_C/I_B= 20

Figure 10. Forward Diode Voltage

Typical Switching Characteristics

1000

100

3000

T = 25°C

J

T = 125°C

T = 25°C

J

C

ib

(pF)

f(test) = 1 MHz

2500

2000

1500

1000

I /I = 10

C

B

I

= I

Boff

V_CC= 300 V

PW = 40 ms

Bon

C

(pF)

ob

10

1

500

0

I /I = 5

C

B

1

10

100

0.1

0.4

0.7

1

1.3

1.6

V , REVERSE VOLTAGE (VOLTS)

R

I , COLLECTOR CURRENT (AMPS)

C

Figure 11. Capacitance

Figure 12. Resistive Switch Time, t_on

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5

MJD18002D2

Typical Switching Characteristics

5.5

5.0

4.5

4.0

3.5

3.0

2.5

3

T = 125°C

T = 25°C

J

I

= I

Boff

J

Bon

T = 125°C

J

V_CC= 300 V

PW = 40 ms

2.5

2

T = 25°C

J

I /I = 10

C

B

I

V

= I

,

Bon

Boff

= 15 V,

= 300 V

= 200 mH

CC

I /I = 5

C

1.5

1

B

Z

L

C

2.0

1.5

0.1

0.4

0.7

1

1.3

1.6

0

0.5

1

1.5

I , COLLECTOR CURRENT (AMPS)

C

I , COLLECTOR CURRENT (AMPS)

C

Figure 13. Resistive Switch Time, t_off

Figure 14. Inductive Storage Time, t_si@ I_C/I_B= 5

700

600

500

400

300

200

4

3

2

T = 125°C

T = 25°C

J

I /I

C

= 5

T = 125°C

T = 25°C

J

Bon

J

I

= I

= 15 V,

= 300 V

= 200 mH

,

Boff

Bon

V

L

CC

I

V

L

= I

,

Z

Bon

Boff

t

= 15 V,

= 300 V

= 200 mH

c

C

CC

I

= 1 A

Z

C

t

fi

I

= 300 mA

1

0

C

100

0

0.5

1

1.5

3

6

9

12

15

I , COLLECTOR CURRENT (AMPS)

C

h , FORCED GAIN

FE

Figure 15. Inductive Switching, t_c& t_fi@ I_C/I_B= 5

Figure 16. Inductive Storage Time

1000

1800

1200

T = 125°C

T = 25°C

J

T = 125°C

J

T = 25°C

J

800

600

400

I

V

= I

,

I

= I

,

Boff

Bon

Boff

Bon

I

= 1 A

C

= 15 V,

= 300 V

= 200 mH

V

= 15 V,

CC

I

= 1 A

C

= 300 V

Z

L

C

= 200 mH

C

600

0

I

= 0.3 A

C

200

0

I

= 0.3 A

13

C

3

5

7

9

11

15

3

6

9

12

15

h , FORCED GAIN

FE

h , FORCED GAIN

FE

Figure 17. Inductive Fall Time

Figure 18. Inductive Cross−Over Time

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6

MJD18002D2

Typical Switching Characteristics

1600

1.6

I

= I

,

Boff

Bon

V

= 15 V,

= 300 V

= 200 mH

CC

I /I = 5

C

B

Z

T = 125°C

T = 25°C

J

1200

800

J

1.2

0.8

L

C

t

c

t

fi

I

= I /2,

= 15 V,

= 300 V

= 200 mH

Boff

C

I /I = 10

400

0

0.4

0

C

B

V

L

CC

T = 125°C

T = 25°C

J

Z

C

0.3

0.7

1.1

1.5

0

0.5

1

1.5

I , COLLECTOR CURRENT (AMPS)

C

I , COLLECTOR CURRENT (AMPS)

C

Figure 19. Inductive Switching Time,

t_fi& T_C@ G = 10

Figure 20. Inductive Switching Time, t_si

200

150

300

250

200

150

T = 125°C

T = 25°C

J

T = 125°C

T = 25°C

J

I

V

= I /2,

= 15 V,

CC

= 300 V

= 200 mH

J

Boff

C

I

V

= I /2,

= 15 V,

= 300 V

= 200 mH

Boff

C

CC

Z

L

C

L

C

I /I = 10

C

B

I /I = 5

100

50

C

B

100

50

I /I = 10

C

B

I /I = 5

C

B

0

0.5

1

1.5

0

0.5

1

1.5

I , COLLECTOR CURRENT (AMPS)

C

I , COLLECTOR CURRENT (AMPS)

C

Figure 21. Inductive Storage Time, t_fi

Figure 22. Inductive Storage Time, t_c

2.4

2.2

2.0

1.8

1.6

1.4

I

= I

= 15 V,

= 300 V

= 200 mH

,

I = 200 mA

B

Bon

Boff

V

L

CC

Z

C

I

= 50 mA

B

I

= 500 mA

B

I

= 100 mA

B

1.2

1

0

0.4

0.8

, FORCED GAIN

1.2

1.6

h

FE

Figure 23. Inductive Storage Time, t_si

Figure 24. Dynamic Saturation Voltage

Measurements

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7

MJD18002D2

Typical Switching Characteristics

10

9

90% I

I

C

t

fi

8

t

si

7

6

10% V

clamp

10% I

V

5

clamp

t

c

4

90% I

B1

I

B

3

2

1

0

1

2

3

4

5

6

7

8

TIME

Figure 25. Inductive Switching Measurements

Table 1. Inductive Load Switching Drive Circuit

+15 V

I PEAK

C

100 mF

1 mF

100 W

3 W

MTP8P10

150 W

3 W

V

PEAK

CE

V

CE

MTP8P10

R

MPF930

B1

I

B1

MUR105

MJE210

MPF930

I

+10 V

I

B

out

A

I

B2

50

R

B2

W

V

L = 10 mH

Inductive Switching

RBSOA

L = 500 mH

COMMON

(BR)CEO(sus)

MTP12N10

150 W

3 W

L = 200 mH

R

500 mF

R

= ∞

= 20 Volts

= 100 mA

= 0

= 15 Volts

selected for

R

= 0

= 15 Volts

selected for

B2

V

I

V

CC

R

ꢀdesired I

R

B1

1 mF

C(pk)

B1

ꢀdesired I

B1

−V

off

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8

MJD18002D2

12

10

8

10

V

FRM

V

(1.1 V ) Unless

F

FR

10 ms

50 ms

1 ms

Otherwise Specified

5 ms

1 ms

DC

1

V

F

0.1 V

F

t

fr

6

0.1

4

10% I

2

0

F

0.01

0

2

4

6

8

10

100

1000

V

, COLLECTOR−EMITTER VOLTAGE (VOLTS)

CE

Figure 26. t_frMeasurement

Figure 27. Forward Bias Safe Operating Area

1

0.8

0.6

0.4

2.5

T

= 125°C

C

Second Breakdown Derating

Gain = 4

= 500 mH

2

1.5

1

L

C

V

= −1.5 V

BE(off)

Thermal Derating

V

= −5 V

BE(off)

0.5

0

0.2

0

V

= 0 V

BE

0

200

400

600

800

1000

1200

20

40

60

80

100

120

140

160

V

, COLLECTOR−EMITTER VOLTAGE (VOLTS)

CE

T , CASE TEMPERATURE (°C)

C

Figure 28. Reverse Bias Safe Operating Area

Figure 29. Forward Bias Power Derating

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

Figure 27 may be found at any case temperature by using the

appropriate curve on Figure 29.

breakdown. Safe operating area curves indicate I −V

T

may be calculated from the data in Figure 30. At any

C

CE

J(pk)

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate. The data of Figure 27 is

case temperatures, thermal limitations will reduce the power

that can be handled to values less than the limitations

imposed by second breakdown. For inductive loads, high

voltage and current must be sustained simultaneously during

turn−off with the base to emitter junction reverse biased. The

safe level is specified as a reverse biased safe operating area

(Figure 28). This rating is verified under clamped conditions

so that the device is never subjected to an avalanche mode.

based on T = 25°C; T

is variable depending on power

level. Second breakdown pulse limits are valid for duty

C

J(pk)

cycles to 10% but must be derated when T > 25°C. Second

C

Breakdown limitations do not derate the same as thermal

limitations. Allowable current at the voltages shown on

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9

MJD18002D2

1

0.5

0.2

0.1

0.05

0.1

R

= r(t) R

q

JC

= 55°/W MAX

q

JC(t)

P

(pk)

0.02

0.01

JC

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t

t

1

t

2

1

DUTY CYCLE, D = t /t

SINGLE PULSE

1 2

T

− T = P

C

R

(t)

q

(pk) JC

J(pk)

0.01

0.1

1

10

100

1000

t, TIME (ms)

Figure 30. Typical Thermal Response (Z_q_JC(t)) for MJD18002D2

1100

440

di/dt = 10 A/ms

T = 25°C

C

B

(Volts) @ 10 mA

VCER

1000

900

800

700

600

420

400

380

360

340

T = 25°C

J

B

@ 200 mA

100

VCER(sus)

500

400

320

300

10

1000

()

10,000

100,000

0

0.5

1

1.5

2

R

I , FORWARD CURRENT (AMPS)

F

BE

Figure 31. B_VCER

Figure 32. Forward Recovery Time, t_fr

http://onsemi.com

10

MJD18002D2

PACKAGE DIMENSIONS

DPAK

CASE 369C

ISSUE O

NOTES:

SEATING

PLANE

−T−

1. DIMENSIONING AND TOLERANCING

PER ANSI Y14.5M, 1982.

C

2. CONTROLLING DIMENSION: INCH.

B

R

INCHES

DIM MIN MAX

MILLIMETERS

E

V

MIN

5.97

6.35

2.19

0.69

0.46

0.94

MAX

6.22

6.73

2.38

0.88

0.58

1.14

A

B

C

D

E

F

G

H

J

0.235 0.245

0.250 0.265

0.086 0.094

0.027 0.035

0.018 0.023

0.037 0.045

0.180 BSC

0.034 0.040

0.018 0.023

0.102 0.114

0.090 BSC

4

2

Z

A

K

S

1

3

4.58 BSC

U

0.87

0.46

2.60

1.01

0.58

2.89

K

L

2.29 BSC

F

J

R

S

U

V

Z

0.180 0.215

0.025 0.040

4.57

0.63

0.51

0.89

3.93

5.45

1.01

−−−

1.27

−−−

L

H

0.020

0.035 0.050

0.155 −−−

−−−

D 2 PL

M

G

0.13 (0.005)

T

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

SOLDERING FOOTPRINT*

6.20

3.0

0.244

0.118

2.58

0.101

5.80

0.228

1.6

0.063

6.172

0.243

mm

inches

ǒ

Ǔ

SCALE 3:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

Six Sigma is a registered trademark and servicemark of Motorola, Inc.

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

ON Semiconductor Website: http://onsemi.com

Order Literature: http://www.onsemi.com/litorder

Literature Distribution Center for ON Semiconductor

P.O. Box 61312, Phoenix, Arizona 85082−1312 USA

Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada

Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

Japan: ON Semiconductor, Japan Customer Focus Center

2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051

Phone: 81−3−5773−3850

For additional information, please contact your

local Sales Representative.

MJD18002D2/D

http://onsemi.com

11

型号:	MJD18002D2T4G
Brand Name：	ON Semiconductor
是否无铅：	不含铅
生命周期：	End Of Life
包装说明：	SMALL OUTLINE, R-PSSO-G2
针数：	3
制造商包装代码：	369C
Reach Compliance Code：	not_compliant
ECCN代码：	EAR99
风险等级：	5.27
其他特性：	FREE WHEELING DIODE
外壳连接：	COLLECTOR
最大集电极电流 (IC)：	2 A
集电极-发射极最大电压：	450 V
配置：	SINGLE WITH BUILT-IN DIODE
最小直流电流增益 (hFE)：	6
JESD-30 代码：	R-PSSO-G2
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	1
端子数量：	2
最高工作温度：	150 °C
最低工作温度：	-65 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	NPN
最大功率耗散 (Abs)：	50 W
认证状态：	Not Qualified
子类别：	Other Transistors
表面贴装：	YES
端子面层：	Tin (Sn)
端子形式：	GULL WING
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	40
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
标称过渡频率 (fT)：	13 MHz
Base Number Matches：	1

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