NBRD5H100T4G全新原装原理图各脚功能电路原理芯片引脚定义-中国IC网-芯三七

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产品型号NBRD5H100T4G的概述

芯片NBRD5H100T4G的概述 NBRD5H100T4G是一款工业级高性能电源管理芯片，广泛应用于各种电子设备中。作为一种高集成度电源管理解决方案，它以其出色的稳定性和可靠性被许多行业所青睐，包括汽车、通讯、消费电子等领域。这款芯片以其灵活的电源管理能力，能够满足不同设计需求，助力多种应用的实现。该芯片的主要功能包括电压调节、过流保护、过温保护等。NBRD5H100T4G的设计考虑到了电源供应的稳定性与效率，旨在最大限度地延长设备的使用寿命，并减少外部元器件的数量，从而降低系统成本和复杂性。此外，该芯片的工作温度范围较宽，使其具备较强的环境适应能力，适合在恶劣环境下正常运行。芯片NBRD5H100T4G的详细参数 NBRD5H100T4G的核心参数包括： - 输入电压范围：通常在4.5V至20V之间，适应多种电源环境。 - 输出电压范围：支持多种输出设定，调节精度相对较高。 -...

产品型号NBRD5H100T4G的Datasheet PDF文件预览

MBRD5H100T4G,

NBRD5H100T4G

SWITCHMODE

Schottky Power Rectifier

Surface Mount Power Package

http://onsemi.com

This series of Power Rectifiers employs the Schottky Barrier

principle in a large metal−to−silicon power diode. State−of−the−art

geometry features epitaxial construction with oxide passivation and

metal overlay contact. Ideally suited for use in low voltage, high

frequency switching power supplies, free wheeling diodes, and

polarity protection diodes.

SCHOTTKY BARRIER

RECTIFIER

5 AMPERES, 100 VOLTS

Features

• Guardring for Stress Protection

• Low Forward Voltage

• 175°C Operating Junction Temperature

• Epoxy Meets UL 94 V−0 @ 0.125 in

• Short Heat Sink Tab Manufactured − Not Sheared!

• NBRD Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

DPAK

CASE 369C

• All Packages are Pb−Free*

(Pin 1: No Connect)

Mechanical Characteristics:

• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0

• Weight: 0.4 grams (approximately)

MARKING DIAGRAM

• Finish: All External Surfaces Corrosion Resistant and Terminal

YWW

5100G

Leads are Readily Solderable

• Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

• Device Meets MSL1 Requirements

• ESD Ratings:

= Year

B5100

= Work Week

= Device Code

= Pb−Free Package

♦ Machine Model = C (> 400 V)

♦ Human Body Model = 3B (> 8000 V)

ORDERING INFORMATION

†

Device

Package

Shipping

MBRD5H100T4G

DPAK

2,500 /

(Pb−Free)

Tape & Reel

NBRD5H100T4G

DPAK

2,500 /

(Pb−Free)

Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Publication Order Number:

October, 2012 − Rev. 5

MBRD5H100/D

MBRD5H100T4G, NBRD5H100T4G

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

100

RRM

RWM

Average Rectified Forward Current

F(AV)

(Rated V ) T = 171°C

Peak Repetitive Forward Current

FRM

(Rated V , Square Wave, 20 kHz) T = 171°C

Nonrepetitive Peak Surge Current

(Surge applied at rated load conditions halfwave, single phase, 60 Hz)

FSM

105

Operating Junction and Storage Temperature Range (Note 1)

T , T

−65 to +175

°C

stg

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP /dT < 1/R .

THERMAL CHARACTERISTICS

Characteristic

Symbol

Value

Unit

Thermal Resistance

Junction−to−Case (Note 2)

Junction−to−Ambient (Note 2)

°C/W

1.6

95.8

2. When mounted using minimum recommended pad size on FR−4 board.

ELECTRICAL CHARACTERISTICS

Characteristic

Symbol

Value

Unit

Maximum Instantaneous Forward Voltage (Note 3)

(I = 5 A, T = 25°C)

0.71

0.60

(I = 5 A, T = 125°C)

Maximum Instantaneous Reverse Current (Note 3)

(Rated dc Voltage, T = 125°C)

4.5

3.5

(Rated dc Voltage, T = 25°C)

3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%

http://onsemi.com

MBRD5H100T4G, NBRD5H100T4G

100

150°C

25°C

125°C

0.2 0.3 0.4

0.1

0.5 0.6 0.7

0.8 0.9

1.0 1.1

0.1

0.2 0.3 0.4 0.5

0.6 0.7 0.8 0.9 1.0 1.1 1.2

VF, INSTANTANEOUS FORWARD VOLTAGE (V)

Figure 1. Typical Forward Voltage

Figure 2. Maximum Forward Voltage

100

150°C

125°C

150°C

125°C

0.1

0.01

0.001

0.1

0.01

25°C

0.0001

0.00001

0.001

0.0001

90 100

VR, REVERSE VOLTAGE (V)

Figure 3. Typical Reverse Current

Figure 4. Maximum Reverse Current

1200

1000

800

T = 25°C

f = 1 MHz

= 1.6 °C/W

Square

600

400

200

145

150

155

160

165

170

175

180

100

T , CASE TEMPERATURE (°C)

VR, REVERSE VOLTAGE (V)

Figure 5. Typical Capacitance

Figure 6. Current Derating, Case

http://onsemi.com

MBRD5H100T4G, NBRD5H100T4G

= 95.8 °C/W

Square Wave

100

120 140

160

180

T , AMBIENT TEMPERATURE (°C)

I , AVERAGE FORWARD CURRENT (A)

F(AV)

Figure 7. Current Derating, Ambient

Figure 8. Forward Power Dissipation

100

50% (DUTY CYCLE)

20%

10%

5.0%

2.0%

1.0

0.1

1.0%

0.01

SINGLE PULSE

0.001

0.000001

0.00001

0.0001

0.001

0.01

PULSE TIME (s)

0.1

1.0

100

1000

Figure 9. Thermal Response, Junction−to−Case

http://onsemi.com

MBRD5H100T4G, NBRD5H100T4G

PACKAGE DIMENSIONS

DPAK (SINGLE GAUGE)

CASE 369C

ISSUE D

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME

Y14.5M, 1994.

2. CONTROLLING DIMENSION: INCHES.

3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-

MENSIONS b3, L3 and Z.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD

FLASH, PROTRUSIONS, OR BURRS. MOLD

FLASH, PROTRUSIONS, OR GATE BURRS SHALL

NOT EXCEED 0.006 INCHES PER SIDE.

5. DIMENSIONS D AND E ARE DETERMINED AT THE

OUTERMOST EXTREMES OF THE PLASTIC BODY.

6. DATUMS A AND B ARE DETERMINED AT DATUM

PLANE H.

DETAIL A

INCHES

DIM MIN MAX

0.086 0.094

A1 0.000 0.005

0.025 0.035

MILLIMETERS

MIN

2.18

0.00

0.63

0.76

4.57

0.46

5.97

6.35

MAX

2.38

0.13

0.89

1.14

5.46

0.61

6.22

6.73

b2 0.030 0.045

b3 0.180 0.215

0.005 (0.13)

0.018 0.024

c2 0.018 0.024

GAUGE

PLANE

SEATING

PLANE

0.235 0.245

0.250 0.265

0.090 BSC

2.29 BSC

9.40 10.41

1.40 1.78

2.74 REF

0.51 BSC

0.89 1.27

0.370 0.410

0.055 0.070

0.108 REF

0.020 BSC

DETAIL A

L3 0.035 0.050

ROTATED 905 CW

−−− 0.040

0.155 −−−

−−−

3.93

1.01

−−−

SOLDERING FOOTPRINT*

6.20

3.00

0.244

0.118

2.58

0.102

5.80

1.60

0.063

6.17

0.228

0.243

inches

SCALE 3:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

For additional information, please contact your local

Sales Representative

MBRD5H100/D

http://onsemi.com

NBRD5H100T4G相关文章

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NBRS2H100T3G产品参数

型号:	NBRS2H100T3G
Brand Name：	ON Semiconductor
是否无铅：	不含铅
生命周期：	Active
IHS 制造商：	ON SEMICONDUCTOR
包装说明：	SMB, 2 PIN
针数：	2
制造商包装代码：	403A-03
Reach Compliance Code：	not_compliant
ECCN代码：	EAR99
HTS代码：	8541.10.00.80
Factory Lead Time：	1 week
风险等级：	0.97
其他特性：	FREE WHEELING DIODE
应用：	POWER
配置：	SINGLE
二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	0.79 V
JESD-30 代码：	R-PDSO-C2
JESD-609代码：	e3
湿度敏感等级：	1
最大非重复峰值正向电流：	130 A
元件数量：	1
相数：	1
端子数量：	2
最高工作温度：	175 °C
最低工作温度：	-65 °C
最大输出电流：	2 A
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
参考标准：	AEC-Q101
最大重复峰值反向电压：	100 V
最大反向电流：	8 µA
反向测试电压：	100 V
表面贴装：	YES
技术：	SCHOTTKY
端子面层：	Tin (Sn)
端子形式：	C BEND
端子位置：	DUAL
Base Number Matches：	1

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产品型号NBRD5H100T4G的概述

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