NCE4953现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

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NCE4953

NCE P-Channel Enhancement Mode Power MOSFET

DESCRIPTION

The NCE4953 uses advanced trench technology to provide

D1

D2

excellent R_DS(ON), low gate charge and operation with gate

G1

G2

voltages as low as 4.5V. This device is suitable for use as a

load switch or in PWM applications.

S1

S2

Schematic diagram

GENERAL FEATURES

● V_DS= -30V,I_D= -5.1A

R_DS(ON)< 85mΩ @ V_GS=-4.5V

R_DS(ON)< 53mΩ @ V_GS=-10V

● High Power and current handing capability

● Lead free product is acquired

● Surface Mount Package

Marking and pin Assignment

Application

●PWM applications

●Load switch

SOP-8 top view

●Power management

Package Marking And Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

2500 units

NCE4953

SOP-8

Ø330mm

12mm

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter Symbol

Limit

-30

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V

V^DS

V^GS

I_D

±20

-5.1

-20

A

Drain Current-Pulsed (Note 1)

A

I_DM

Maximum Power Dissipation

2.5

W

℃

P_D

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient (Note 2)

R_θJA

50

℃/W

Electrical Characteristics (TA=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min Typ Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

BV_DSS

I_DSS

V_GS=0V I_D=-250μA

-30

V

V_DS=-24V,V_GS=0V

-1

μA

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NCE4953

Gate-Body Leakage Current

I_GSS

V_GS=±20V,V_DS=0V

±100

nA

On Characteristics (Note 3)

Gate Threshold Voltage

V_GS(th)

R_DS(ON)

g_FS

V_DS=V_GS,I_D=-250μA

V_GS=-10V, I_D=-5.1A

V_GS=-4.5V, I_D=-4.2A

V_DS=-15V,I_D=-4.5A

-1

4

-3

53

85

V

mΩ

S

Drain-Source On-State Resistance

Forward Transconductance

Dynamic Characteristics (Note4)

Input Capacitance

7

C_lss

C_oss

C_rss

1040

420

PF

V_DS=-15V,V_GS=0V,

F=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics (Note 4)

Turn-on Delay Time

150

t_d(on)

t_r

t_d(off)

t_f

15

13

58

21

12

2.2

3

nS

nC

Turn-on Rise Time

V_DD=-15V, ID=-1A,

V

_GS=-10V,R_GEN=6Ω

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Q_g

Q_gs

Q_gd

V_DS=-15V,I_D=-5.1A,V_GS=-10V

V_GS=0V,I_S=-1.7A

Gate-Source Charge

Gate-Drain Charge

Drain-Source Diode Characteristics

Diode Forward Voltage (Note 3)

V_SD

-1.2

V

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

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NCE4953

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

t_on

t_r

t_off

t_f

t_d(on)

t_d(off)

90%

V_OUT

INVERTED

10%

90%

10%

50%

V_IN

50%

10%

PULSE WIDTH

Figure 1:Switching Test Circuit

Figure 2:Switching Waveforms

T_J-Junction Temperature(℃)

Figure 3 Power Dissipation

Figure 4 Drain Current

Vds Drain-Source Voltage (V)

I_D- Drain Current (A)

Figure 5 Output CHARACTERISTICS

Figure 6 Drain-Source On-Resistance

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NCE4953

Vgs Gate-Source Voltage (V)

T_J-Junction Temperature(℃)

Figure 7 Transfer Characteristics

Figure 8 Drain-Source On-Resistance

Vgs Gate-Source Voltage (V)

Vds Drain-Source Voltage (V)

Figure 9 Rdson vs Vgs

Figure 10 Capacitance vs Vds

Qg Gate Charge (nC)

Vsd Source-Drain Voltage (V)

Figure 11 Gate Charge

Figure 12 Source- Drain Diode Forward

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NCE4953

Vds Drain-Source Voltage (V)

Figure 13 Safe Operation Area

Square Wave Pluse Duration(sec)

Figure 14 Normalized Maximum Transient Thermal Impedance

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NCE4953

SOP-8 PACKAGE IN FORMATION

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NCE4953

ATTENTION:

■ Any and all NCE power products described or contained herein do not have specifications that can handle applications that

require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications

whose failure can be reasonably expected to result in serious physical and/or material damage. Consult

with your NCE power representative nearest you before using any NCE power products described or contained herein in

such applications.

■

NCE power assumes no responsibility for equipment failures that result from using products at values

that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters)

listed in products specifications of any and all NCE power products described or contained herein.

■ Specifications of any and all NCE power products described or contained herein stipulate the performance, characteristics,

and functions of the described products in the independent state, and are not guarantees of the performance, characteristics,

and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states

that cannot be evaluated in an independent device, the customer should always evaluate and test

devices mounted in the customer’s products or equipment.

■

NCE power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all

semiconductor products fail with some probability. It is possible that these probabilistic failures could

give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could

cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or

events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe

design, redundant design, and structural design.

■ In the event that any or all NCE power products(including technical data, services) described or contained herein are

controlled under any of applicable local export control laws and regulations, such products must not be exported without

obtaining the export license from the authorities concerned in accordance with the above law.

■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including

photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission

of NCE power Semiconductor CO.,LTD.

■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume

production. NCE power believes information herein is accurate and reliable, but no guarantees are made or implied

regarding its use or any infringements of intellectual property rights or other rights of third parties.

■

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE power

product that you intend to use.

■

This catalog provides information as of Sep.2010. Specifications and information herein are subject to change without notice.

Wuxi NCE Power Semiconductor Co., Ltd

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型号:	NCEE3600AHMAHWS
生命周期：	Active
包装说明：	, 0606
Reach Compliance Code：	unknown
ECCN代码：	EAR99
风险等级：	5.66
电容：	0.00036 µF
电容器类型：	CERAMIC CAPACITOR
介电材料：	CERAMIC
高度：	0.25 mm
长度：	1.524 mm
制造商序列号：	NCSERIES
负容差：	2.5%
端子数量：	2
最高工作温度：	125 °C
最低工作温度：	-55 °C
封装形式：	SMT
包装方法：	Waffle Pack
正容差：	2.5%
系列：	NC SERIES
尺寸代码：	0606
温度系数：	15% ppm/ °C
宽度：	1.524 mm
Base Number Matches：	1

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