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产品型号NCR100Q-6M的Datasheet PDF文件预览

NCR100Q-6M  
SCR  
Rev.01 - 28 June 2019  
Product data sheet  
1. General description  
Planar passivated Silicon Controlled Rectifier (SCR) with sensitive gate in a SOT89 surface  
mountable plastic package. This SCR is designed to be interfaced directly to microcontrollers, logic  
integrated circuits and other low power gate trigger circuits.  
2. Features and benefits  
Sensitive gate  
High voltage capability  
Planar passivated for voltage ruggedness and reliability  
Surface mountable package  
3. Applications  
Ground Fault Circuit Interrupters (GFCI)  
General purpose switching and phase control  
Ignition circuits, CDI for 2- and 3-wheelers  
Motor control-e.g. small kitchen appliances  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Values  
Unit  
Absolute maximum rating  
VRRM  
IT(RMS)  
ITSM  
repetitive peak reverse  
voltage  
600  
0.8  
8
V
A
A
RMS on-state current  
half sine wave; T ≤ 109 °C;  
Fig. 1; Fig. 2; Fig. 3  
sp  
non-repetitive peak on-  
state current  
half sine wave; Tj(init) = 25 °C; tp = 10 ms;  
Fig. 4; Fig. 5  
half sine wave; Tj(init) = 25 °C; tp = 8.3 ms  
9
A
Tj  
junction temperature  
125  
°C  
WeEn Semiconductors  
NCR100Q-6M  
SCR  
Symbol  
Static characteristics  
IGT gate trigger current  
IH  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7  
15  
-
-
-
100  
5
μA  
holding current  
VD = 12 V; Tj = 25 °C; RGK(ext) = 1 kΩ;  
mA  
Fig. 9  
VT  
on-state voltage  
IT = 1.6 A; Tj = 25 °C; Fig. 10  
-
1.4  
-
1.7  
-
V
Dynamic characteristics  
dVD/dt rate of rise of off-state VDM = 600 V; Tj = 125 °C; RGK= 1 kΩ;  
voltage exponential waveform  
100  
V/μs  
5. Pinning information  
Table 2. Pinning information  
Pin  
1
Symbol  
Description  
gate  
Simplified outline  
Graphic symbol  
mb  
G
A
A
K
2
anode  
G
sym037  
3
K
cathode  
mb  
mb  
mounting base; connected to  
anode  
1
2
3
6. Ordering information  
Table 3. Ordering information  
Type number  
Package Orderable part number Packing  
Small packing Package  
Package  
Name  
method  
quantity  
version  
issue date  
NCR100Q-6M  
SOT89  
NCR100Q-6MJ  
Reel  
1000  
SOT89L  
8-Mar-2019  
7. Marking  
Table 4. Marking codes  
Type number  
Marking codes  
NCR100Q-6M  
NCR1006M  
©
NCR100Q-6M  
All information provided in this document is subject to legal disclaimers.  
WeEn Semiconductors Co., Ltd. 2019 All rights reserved  
28 June 2019  
Product data sheet  
2 / 11  
WeEn Semiconductors  
NCR100Q-6M  
SCR  
8. Limiting values  
Table 5. Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
Parameter  
Conditions  
Values  
Unit  
VDRM  
repetitive peak off-state  
voltage  
600  
V
VRRM  
repetitive peak reverse  
voltage  
600  
V
IT(AV)  
average on-state current  
RMS on-state current  
half sine wave; T ≤ 109 °C  
0.51  
0.8  
A
A
sp  
IT(RMS)  
half sine wave; T ≤ 109 °C;  
sp  
Fig. 1; Fig. 2; Fig. 3  
ITSM  
non-repetitive peak on-  
state current  
half sine wave; Tj(init) = 25 °C; tp = 10 ms;  
Fig. 4; Fig. 5  
8
A
half sine wave; Tj(init) = 25 °C; tp = 8.3 ms  
tp = 10ms; sine wave  
9
A
I2t  
I2t for fusing  
0.32  
50  
A2s  
dIT/dt  
rate of rise of on-state  
current  
IG = 0.2 mA  
A/μs  
IGM  
peak gate current  
peak gate voltage  
peak gate power  
1
A
V
VGM  
PGM  
PG(AV)  
5
2
W
W
°C  
°C  
average gate power  
storage temperature  
junction temperature  
over any 20 ms period  
0.1  
T
stg  
-40 to 150  
125  
Tj  
caca19-001  
caca19-002  
1.8  
T(RMS)  
1
0.8  
0.6  
0.4  
0.2  
0
I
I
T(RMS)  
(A)  
(A)  
109°C  
1.6  
1.4  
1.2  
1
0.8  
0.6  
-2  
-1  
10  
10  
1
10  
-50  
0
50  
100  
150  
(°C)  
surge duration (s)  
T
sp  
Fig. 1. RMS on-state current as a function of solder  
point temperature; maximum values  
f = 50Hz; T = 109 °C  
sp  
Fig. 2. RMS on-state current as a function of surge  
duration; maximum values  
©
NCR100Q-6M  
All information provided in this document is subject to legal disclaimers.  
WeEn Semiconductors Co., Ltd. 2019 All rights reserved  
28 June 2019  
Product data sheet  
3 / 11  
WeEn Semiconductors  
NCR100Q-6M  
SCR  
caca19-003  
1.2  
101  
sp(max)  
(°C)  
conduction form  
P
tot  
(W)  
T
angle  
factor  
a
(degrees)  
1
0.8  
0.6  
0.4  
0.2  
0
30  
60  
4
a = 1.57  
2.8  
2.2  
1.9  
1.57  
α
109  
117  
125  
90  
1.9  
120  
180  
2.2  
2.8  
4
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
I
(A)  
T(AV)  
α = conduction angle  
a = form factor = IT(RMS) / IT(AV)  
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values  
001aab499  
10  
I
TSM  
(A)  
I
I
T
TSM  
8
6
4
2
0
t
t
p
T
= 25 °C max  
j(init)  
2
3
1
10  
10  
10  
number of cycles  
f = 50 Hz  
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum  
values  
001aab497  
3
10  
I
I
T
TSM  
I
TSM  
(A)  
t
t
p
2
10  
T
= 25 °C max  
j(init)  
10  
1
-5  
10  
-4  
-3  
10  
-2  
10  
10  
t
p
(s)  
tp ≤ 10 ms  
Fig. 5. Non-repetitive peak on-state current as a function of pulse duration; maximum values  
©
NCR100Q-6M  
All information provided in this document is subject to legal disclaimers.  
WeEn Semiconductors Co., Ltd. 2019 All rights reserved  
28 June 2019  
Product data sheet  
4 / 11  
WeEn Semiconductors  
NCR100Q-6M  
SCR  
9. Thermal characteristics  
Table 6. Thermal characteristics  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Rth(j-sp)  
thermal resistance  
from junction to  
solder point  
Fig. 6  
-
-
20  
K/W  
Rth(j-a)  
thermal resistance  
from junction to  
ambient free air  
in free air  
-
90  
-
K/W  
caca19-006  
2
10  
Z
th(j-sp)  
(K/W)  
10  
1
-1  
10  
t
p
P
δ =  
T
-2  
10  
10  
t
t
p
T
-3  
10  
-6  
-5  
-4  
-3  
-2  
-1  
10  
10  
10  
10  
10  
1
10  
t
p
(s)  
Fig. 6. Transient thermal impedance from junction to solder point as a function of pulse duration  
©
NCR100Q-6M  
All information provided in this document is subject to legal disclaimers.  
WeEn Semiconductors Co., Ltd. 2019 All rights reserved  
28 June 2019  
Product data sheet  
5 / 11  
WeEn Semiconductors  
NCR100Q-6M  
SCR  
10. Characteristics  
Table 7. Characteristics  
Symbol  
Static characteristics  
IGT gate trigger current  
IL  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7  
15  
-
-
-
100  
μA  
latching current  
holding current  
VD = 12 V; IT = 0.1 A; Tj = 25 °C;  
RGK(ext) = 1 kΩ; Fig. 8  
6
mA  
IH  
VD = 12 V; Tj = 25 °C;  
RGK(ext) = 1 kΩ; Fig. 9  
-
-
5
mA  
VT  
on-state voltage  
IT = 1.6 A; Tj = 25 °C; Fig. 10  
-
-
1.4  
0.7  
1.7  
1
V
V
VGT  
gate trigger voltage  
VD = 12 V; IT = 0.1 A; Tj = 25 °C;  
Fig. 11  
VD = 600 V; IT = 0.1 A; Tj = 125 °C  
VD = 600 V; Tj = 125 °C  
0.2  
0.5  
-
V
ID  
IR  
off-state current  
reverse current  
-
-
-
-
0.1  
0.1  
mA  
mA  
VD = 600 V; Tj = 125 °C  
Dynamic characteristics  
dVD/dt  
rate of rise of off-state VDM = 600 V; Tj = 125 °C; RGK= 1 kΩ;  
voltage exponential waveform  
100  
-
-
-
-
V/μs  
μs  
tgt  
tq  
gate-controlled turn-on ITM = 2 A; VD = 600 V; IG = 1 mA;  
-
-
2
time  
(dIG/dt)M = 0.1 A/μs; Tj = 25 °C  
commutated turn-off  
time  
VDM = 402 V; Tj = 125 °C; ITM = 1.6 A;  
VR = 35 V; dVD/dt = 2 V/μs; (dIT/dt)M =  
30 A/μs; RGK(ext) = 1 kΩ ; (VDM = 67% of  
100  
μs  
VDRM  
)
caca19-007  
caca19-008  
4
3
I
GT  
I
L
I
GT(25°C)  
I
L(25°C)  
3
2
2
1
0
1
0
-50  
0
50  
100  
150  
-50  
0
50  
100  
150  
T (°C)  
j
T (°C)  
j
Fig. 7. Normalized gate trigger current as a function of Fig. 8. Normalized latching current as a function of  
junction temperature  
junction temperature  
©
NCR100Q-6M  
All information provided in this document is subject to legal disclaimers.  
WeEn Semiconductors Co., Ltd. 2019 All rights reserved  
28 June 2019  
Product data sheet  
6 / 11  
WeEn Semiconductors  
NCR100Q-6M  
SCR  
caca19-009  
caca19-010  
3
5
4
3
2
1
0
I
T
I
H
(A)  
I
H(25°C)  
2
1
0
(1)  
(2) (3)  
-50  
0
50  
100  
150  
0
1
2
3
T (°C)  
j
V
T
(V)  
Fig. 9. Normalized holding current as a function of  
junction temperature  
Vo = 1.173 V; Rs = 0.3437 Ω  
(1) Tj = 125 °C; typical values  
(2) Tj = 125 °C; maximum values  
(3) Tj = 25 °C; maximum values  
Fig. 10. On-state current as a function of on-state  
voltage  
caca19-011  
1.6  
V
GT  
V
GT(25°C)  
1.2  
0.8  
0.4  
-50  
0
50  
100  
150  
T (°C)  
j
Fig. 11. Normalized gate trigger voltage as a function of junction temperature  
©
NCR100Q-6M  
All information provided in this document is subject to legal disclaimers.  
WeEn Semiconductors Co., Ltd. 2019 All rights reserved  
28 June 2019  
Product data sheet  
7 / 11  
WeEn Semiconductors  
NCR100Q-6M  
SCR  
11. Package outline  
©
NCR100Q-6M  
All information provided in this document is subject to legal disclaimers.  
WeEn Semiconductors Co., Ltd. 2019 All rights reserved  
28 June 2019  
Product data sheet  
8 / 11  
WeEn Semiconductors  
NCR100Q-6M  
SCR  
Right to make changes — WeEn Semiconductors reserves the right to  
make changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
12. Legal information  
Suitability for use — WeEn Semiconductors products are not designed,  
authorized or warranted to be suitable for use in life support, life-critical  
or safety-critical systems or equipment, nor in applications where failure  
or malfunction of an WeEn Semiconductors product can reasonably  
be expected to result in personal injury, death or severe property or  
environmental damage. WeEn Semiconductors and its suppliers accept no  
liability for inclusion and/or use of WeEn Semiconductors products in such  
equipment or applications and therefore such inclusion and/or use is at the  
customer’s own risk.  
Data sheet status  
Document  
Product  
Definition  
status [1][2] status [3]  
Objective  
[short] data  
sheet  
Development This document contains data from  
the objective specification for product  
development.  
Preliminary  
[short] data  
sheet  
Qualification This document contains data from the  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
preliminary specification.  
Product  
[short] data  
sheet  
Production  
This document contains the product  
specification.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. WeEn Semiconductors makes  
no representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
[1  
lease consult the most recently issued document before initiating or  
P
completing a design.  
]
Customers are responsible for the design and operation of their applications  
and products using WeEn Semiconductors products, and WeEn  
Semiconductors accepts no liability for any assistance with applications or  
customer product design. It is customer’s sole responsibility to determine  
whether the WeEn Semiconductors product is suitable and fit for the  
customer’s applications and products planned, as well as for the planned  
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provide appropriate design and operating safeguards to minimize the risks  
associated with their applications and products.  
[2] The term 'short data sheet' is explained in section "Definitions".  
[3] The product status of device(s) described in this document may have  
changed since this document was published and may differ in case of  
multiple devices. The latest product status information is available on  
the Internet at URL http://www.ween-semi.com.  
Definitions  
WeEn Semiconductors does not accept any liability related to any default,  
damage, costs or problem which is based on any weakness or default  
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Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those  
given in the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
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data sheet shall define the specification of the product as agreed between  
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Non-automotive qualified products — Unless this data sheet expressly  
states that this specific WeEn Semiconductors product is automotive  
qualified, the product is not suitable for automotive use. It is neither qualified  
nor tested in accordance with automotive testing or application requirements.  
WeEn Semiconductors accepts no liability for inclusion and/or use of non-  
automotive qualified products in automotive equipment or applications.  
Limited warranty and liability — Information in this document is believed  
to be accurate and reliable. However, WeEn Semiconductors does not  
give any representations or warranties, expressed or implied, as to the  
accuracy or completeness of such information and shall have no liability for  
the consequences of use of such information. WeEn Semiconductors takes  
no responsibility for the content in this document if provided by an information  
source outside of WeEn Semiconductors.  
In the event that customer uses the product for design-in and use in  
automotive applications to automotive specifications and standards,  
customer (a) shall use the product without WeEn Semiconductors’ warranty  
of the product for such automotive applications, use and specifications, and  
(b) whenever customer uses the product for automotive applications beyond  
WeEn Semiconductors’ specifications such use shall be solely at customer’s  
own risk, and (c) customer fully indemnifies WeEn Semiconductors for  
any liability, damages or failed product claims resulting from customer  
design and use of the product for automotive applications beyond WeEn  
Semiconductors’ standard warranty and WeEn Semiconductors’ product  
specifications.  
In no event shall WeEn Semiconductors be liable for any indirect, incidental,  
punitive, special or consequential damages (including - without limitation -  
lost profits, lost savings, business interruption, costs related to the removal  
or replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever, WeEn Semiconductors’ aggregate and cumulative liability  
towards customer for the products described herein shall be limited in  
accordance with the Terms and conditions of commercial sale of WeEn  
Semiconductors.  
©
NCR100Q-6M  
All information provided in this document is subject to legal disclaimers.  
WeEn Semiconductors Co., Ltd. 2019 All rights reserved  
28 June 2019  
Product data sheet  
9 / 11  
WeEn Semiconductors  
NCR100Q-6M  
SCR  
Translations — A non-English (translated) version of a document is for  
reference only. The English version shall prevail in case of any discrepancy  
between the translated and English versions.  
Trademarks  
Notice: All referenced brands, product names, service names and  
trademarks are the property of their respective owners.  
©
NCR100Q-6M  
All information provided in this document is subject to legal disclaimers.  
WeEn Semiconductors Co., Ltd. 2019 All rights reserved  
28 June 2019  
Product data sheet  
10 / 11  
WeEn Semiconductors  
NCR100Q-6M  
SCR  
13. Contents  
1. General description.......................................................1  
2. Features and benefits ...................................................1  
3. Applications...................................................................1  
4. Quick reference data.....................................................1  
5. Pinning information.......................................................2  
6. Ordering information.....................................................2  
7. Marking...........................................................................3  
8. Limiting values ..............................................................3  
9. Thermal characteristics................................................5  
10. Characteristics.............................................................6  
11. Package outline ...........................................................8  
12. Legal information ........................................................9  
13. Contents.....................................................................11  
©
WeEn Semiconductors Co., Ltd. 2019. All rights reserved  
For more information, please visit: http://www.ween-semi.com  
For sales office addresses, please send an email to: salesaddresses@ween-semi.com  
Date of release: 28 June 2019  
©
NCR100Q-6M  
All information provided in this document is subject to legal disclaimers.  
WeEn Semiconductors Co., Ltd. 2019 All rights reserved  
28 June 2019  
Product data sheet  
11 / 11  
配单直通车
NCR104150JV产品参数
型号:NCR104150JV
生命周期:Active
IHS 制造商:HOKURIKU ELECTRIC INDUSTRY CO LTD
包装说明:SMT, 0804
Reach Compliance Code:unknown
ECCN代码:EAR99
风险等级:5.71
构造:Chip
制造商序列号:NCR104
网络类型:Isolated
端子数量:8
最高工作温度:125 °C
最低工作温度:-55 °C
封装高度:0.35 mm
封装长度:2 mm
封装形式:SMT
封装宽度:1 mm
包装方法:Tape, Paper
额定功率耗散 (P):0.031 W
电阻:15 Ω
电阻器类型:ARRAY/NETWORK RESISTOR
系列:NCR104
尺寸代码:0804
子类别:Array/Network Resistors
温度系数:200 ppm/ °C
容差:5%
工作电压:50 V
Base Number Matches:1
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