NDC7003P各脚功能电路原理芯片引脚定义引脚图及功能IC贸易商-中国IC网-芯三七

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产品型号NDC7003P的概述

芯片NDC7003P的概述 NDC7003P是一款专为高效能应用设计的功率放大器芯片，主要应用于各种电子产品中，如无线通讯、音频放大器及传感器信号放大等。该芯片以其高线性度、低失真和广泛的工作频率范围而受到青睐。为了满足日益增长的市场需求，NDC7003P旨在实现高增益和优良的温度稳定性。 NDC7003P的设计目标是优化电源效率并降低热量散发，这对于便携式设备及其他需要节能的应用而言尤为重要。通过先进的工艺技术，NDC7003P能够实现较高的工作效率，同时在输出信号上保持出色的保真度。芯片NDC7003P的详细参数 NDC7003P的性能参数包括但不限于以下几项： 1. 工作电压范围：4.5V 至 12V，适应多种供电需求。 2. 最大输出功率：通常可达到 1W，具备较高的输出能力。 3. 增益：约 26 dB，这意味着输入信号可以显著放大。 4. 频率范围：工作频率可从 100 ...

产品型号NDC7003P的Datasheet PDF文件预览

March 1996

NDC7003P

Dual P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

These dual P-Channel enhancement mode power field

effect transistors are produced using Fairchild's

proprietary, high cell density, DMOS technology. This

very high density process has been designed to minimize

on-state resistance, provide rugged and reliable

performance and fast switching. This product is

particularly suited to low voltage applications requiring a

low current high side switch.

-0.34A, -50V. R_DS(ON)= 5W @ V_GS=-10V.

High density cell design for low R_DS(ON)

Proprietary SuperSOT^TM-6 package design using copper

lead frame for superior thermal and electrical capabilities.

High saturation current.

____________________________________________________________________________________________

SOT-6 (SuperSOT^TM-6)

Absolute Maximum RatingsT_A= 25°C unless otherwise noted

Symbol Parameter

NDC7003P

Units

Drain-Source Voltage

-50

V_DSS

V_GSS

I_D

Gate-Source Voltage - Continuous

Drain Current - Continuous

- Pulsed

-20

-0.34

-1

(Note 1a)

Maximum Power Dissipation

(Note 1a)

(Note 1b)

0.96

P_D

0.9

(Note 1c)

0.7

Operating and Storage Temperature Range

-55 to 150

°C

T_J,T_STG

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

130

°C/W

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max Units

OFF CHARACTERISTICS

BV_DSS

I_DSS

Drain-Source Breakdown Voltage

V_GS= 0 V, I_D= -250 µA

V_DS= -40 V, V_GS= 0 V

-50

Zero Gate Voltage Drain Current

-1

µA

T_J= 125°C

-500

100

-100

Gate - Body Leakage, Forward

Gate - Body Leakage, Reverse

I_GSSF

I_GSSR

V_GS= 20 V, V_DS= 0 V

V_GS= -20 V, V_DS= 0 V

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

-1

-2.5

-2.2

2.5

-3.5

-3

V_GS(th)

V_DS= V_GS, I_D= -250 µ.A

V_GS= -10 V, I_D= -0.34 A

T_J= 125°C -0.8

T_J= 125°C

-1

Static Drain-Source On-Resistance

R_DS(ON)

7.5

5.3

V_GS= -4.5 V, I_D= -0.25 A

V_GS= -10 V, V_DS= -10 V

V_DS= -10 V, I_D= -0.34 A

I_D(on)

g_FS

On-State Drain Current

Forward Transconductance

250

DYNAMIC CHARACTERISTICS

Input Capacitance

V_DS= -25 V, V_GS= 0 V,

f = 1.0 MHz

C_iss

C_oss

C_rss

Output Capacitance

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS (Note 2)

t_D(on)

Turn - On Delay Time

Turn - On Rise Time

V_DD= -25 V, I_D= -0.25 A,

V_GS= -10 V, R_GEN= 25 W

t_r

t_D(off)

Turn - Off Delay Time

Turn - Off Fall Time

t_f

Q_g

Q_gs

Q_gd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

V_DS= -25 V,

I_D= -0.34 A, V_GS= -10 V

1.3

0.23

0.38

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max Units

DRAIN-SOURCE DIODE CHARACTERISTICS

I_S

Maximum Continuous Source Current

Maximum Pulse Source Current (Note 2)

Drain-Source Diode Forward Voltage

-0.34

-1

I_SM

V_SD

Notes:

V_GS= 0 V, I_S= -0.34 A (Note 2)

-0.8

-1.2

1. R_q_JAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R_q_JCis guaranteed by

design while R_q_CAis determined by the user's board design.

T - T

(t)

= I²(t) ´ R_DS(ON

( )

P_Dt

)

+R (t)

Typical R_q_JAfor single device operation using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:

a. 130^oC/W when mounted on a 0.125 in²pad of 2oz cpper.

b. 140^oC/W when mounted on a 0.005 in²pad of 2oz cpper.

c. 180^oC/W when mounted on a 0.0015 in²pad of 2oz cpper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

Typical Electrical Characteristics

-1

2.5

V_GS= -10V

-9.0

-8.0

-7.0

V_GS=-4.5V

-0.8

-0.6

-0.4

-0.2

-5.0

-6.0

-5.0

-7.0

1.5

-8.0

-9.0

-10

-4.0

-3.5

0.5

-0.2

-0.4

-0.6

-0.8

-1

-2

-3

-4

-5

-6

, DRAIN CURRENT (A)

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 2. On-Resistance Variation with Gate

Voltage and Drain Current.

Figure 1. On-Region Characteristics.

1.8

2.5

V_GS=-10 V

I_D= -0.34A

V_GS= -10V

1.6

1.4

1.2

= 125°C

1.5

25°C

0.8

0.6

0.4

-55°C

-0.8

0.5

-50

-25

100

125

150

-0.2

-0.4

-0.6

-1

, JUNCTION TEMPERATURE (°C)

, DRAIN CURRENT (A)

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with Drain

Current and Temperature.

1.1

-1

-0.8

-0.6

-0.4

-0.2

V_DS=- 10V

= -55°C

V_DS= V_GS

25°C

1.05

125°C

I_D= -250µA

0.95

0.9

0.85

0.8

-50

-25

100

125

150

-1

-2

-3

-4

-5

-6

-7

-8

, JUNCTION TEMPERATURE (°C)

, GATE TO SOURCE VOLTAGE (V)

Figure 6. Gate Threshold Variation with

Temperature.

Figure 5. Transfer Characteristics.

Typical Electrical Characteristics (continued)

1.15

I _D= 250µA

V_GS=0V

0.5

1.1

1.05

= 125°C

0.1

25°C

-55°C

0.05

0.01

0.005

0.95

0.9

-50

0.001

-25

100

125

150

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.8

, JUNCTION TEMPERATURE (°C)

-V

, BODY DIODE FORWARD VOLTAGE (V)

Figure 7. Breakdown Voltage Variation with

Temperature.

Figure 8. Body Diode Forward Voltage Variation

with Current and Temperature.

-10

100

I _D= -0.34A

iss

-8

V_DS= -12V

-24

-48

oss

-6

-4

-2

rss

f = 1 MHz

V_GS= 0V

0.2

0.4

0.6

0.8

1.2

1.4

1.6

0.1

0.2

0.5

, GATE CHARGE (nC)

-V

, DRAIN TO SOURCE VOLTAGE (V)

Figure 9. Capacitance Characteristics.

Figure 10. Gate Charge Characteristics.

0.5

V _DS=- 10V

= -55°C

0.4

0.3

0.2

0.1

25°C

125°C

-0.2

-0.4

-0.6

-0.8

-1

, DRAIN CURRENT (A)

Figure 11. Transconductance Variation with Drain

Current and Temperature.

Typical Thermal Characteristics

0.4

0.35

0.3

1.2

1.1

0.9

0.8

0.25

0.2

4.5"x5" FR-4 Board

T_A

25 ^o

Still Air

V_GS-10V

4.5"x5" FR-4 Board

T_A

25^o

Still Air

0.7

0.6

0.025

0.05

0.075

0.1

0.125

0.2

0.4

0.6

0.8

2oz COPPER MOUNTING PAD AREA (in

)

2oz COPPER MOUNTING PAD AREA (in

)

Figure 13. Maximum Steady-State Drain

Current versus Copper Mounting Pad

Area.

Figure 12. SOT-6 Dual Package Maximum

Steady-State Power Dissipation versus

Copper Mounting Pad Area.

0.5

0.2

0.1

V_GS= -10V

0.05

SINGLE PULSE

_JA= See Note 1c

0.02

0.01

T_A= 25°C

-V

, DRAIN-SOURCE VOLTAGE (V)

Figure 14. Maximum Safe Operating Area

D = 0.5

0.5

(t) = r(t) * R

= See Note 1c

0.2

0.1

P(pk)

0.05

0.02

0.01

- T

= P * R

(t)

Single Pulse

0.02

Duty Cycle, D = t / t

0.01

0.0001

0.001

0.01

0.1

, TIME (sec)

100

300

Figure 15. Transient Thermal Response Curve.

Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change

depending on the circuit board design.

SuperSOT^TM-6 Tape and Reel Data and Package Dimensions

SSOT-6 Packaging

Configuration:

Figure 1.0

Packaging Description:

Customize Label

SSOT-6 parts are shipped in tape. The carrier tape is

made from

a dissipative (carbon filled) polycarbonate

resin. The cover tape is a multilayer film (Heat Activated

Adhesive in nature) primarily composed of polyester film,

adhesive layer, sealant, and anti-static sprayed agent.

These reeled parts in standard option are shipped with

3,000 units per 7" or 177cm diameter reel. The reels are

dark blue in color and is made of polystyrene plastic (anti-

static coated). Other option comes in 10,000 units per 13"

or 330cm diameter reel. This and some other options are

described in the Packaging Information table.

Antistatic Cover Tape

These full reels are individually barcode labeled and

placed inside a pizza box (illustrated in figure 1.0) made of

recyclable corrugated brown paper with

printing. One pizza box contains three reels maximum.

And these pizza boxes are placed inside barcode

a Fairchild logo

labeled shipping box which comes in different sizes

depending on the number of parts shipped.

Embossed

Carrier Tape

F63TNR

Label

631

SSOT-6 Packaging Information

Pin 1

Standard

Packaging Option

D87Z

(no flow c ode)

Packaging type

TNR

3,000

7" Dia

TNR

10,000

13"

SSOT-6 Unit Orientation

Qty per Reel/Tube/Bag

Reel Size

Box Dimension (mm)

Max qty per Box

184x187x47 343x343x64

9,000

0.0158

0.1440

30,000

0.0158

0.4700

343mm x 342mm x 64mm

Intermediate box for D87Z Option

F63TNR Label

Weight per unit (gm)

Weight per Reel (kg)

Note/Comments

F63TNR

Label

F63TNR Label sample

F63TNR

Label

LOT: CBVK741B019

FSID: FDC633N

QTY: 3000

SPEC:

184mm x 187mm x 47mm

Pizza Box for Standard Option

D/C1: D9842

D/C2:

QTY1:

QTY2:

SPEC REV:

CPN:

SSOT-6 Tape Leader and Trailer

N/F: F

(F63TNR)3

Configuration:

Figure 2.0

Carrier Tape

Component s

Cover Tape

Trailer Tape

Leader Tape

300mm minimum or

75 empty poc kets

500mm minimum or

125 empty poc kets

1998 Fairchild Semiconductor Corporation

August 1999, Rev. C

SuperSOT^TM-6 Tape and Reel Data and Package Dimensions, continued

SSOT-6 Embossed Carrier Tape

Configuration:

Figure 3.0

User Direction of Feed

Dimensions are in millimeter

Pkg type

SSOT-6

(8mm)

3.23

+/-0.10

3.18

+/-0.10

8.0

+/-0.3

1.55

+/-0.05

1.125

+/-0.125

1.75

+/-0.10

6.25

min

3.50

+/-0.05

4.0

+/-0.1

4.0

+/-0.1

1.37

+/-0.10

0.255

+/-0.150

5.2

+/-0.3

0.06

+/-0.02

Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481

rotational and lateral movement requirements (see sketches A, B, and C).

0.5mm

maximum

20 deg maximum

Typical

component

cavity

center line

0.5mm

maximum

20 deg maximum component rotation

Typical

component

center line

Sketch A (Side or Front Sectional View)

Component Rotation

Sketch C (Top View)

Component lateral movement

Sketch B (Top View)

Component Rotation

SSOT-6 Reel Configuration:

Figure 4.0

W1 Measured at Hub

Dim A

Max

Dim A

max

See detail AA

Dim N

Diameter Option

B Min

Dim C

See detail AA

Dim D

min

13" Diameter Option

W2 max Measured at Hub

DETAIL AA

Dimensions are in inches and millimeters

Reel

Option

Tape Size

Dim A

Dim B

Dim C

Dim D

Dim N

Dim W1

Dim W2

Dim W3 (LSL-USL)

7.00

177.8

0.059

1.5

512 +0.020/-0.008

13 +0.5/-0.2

0.795

20.2

2.165

0.331 +0.059/-0.000

8.4 +1.5/0

0.567

14.4

0.311 – 0.429

7.9 – 10.9

8mm

7" Dia

13.00

330

0.059

1.5

512 +0.020/-0.008

13 +0.5/-0.2

0.795

20.2

4.00

100

0.331 +0.059/-0.000

8.4 +1.5/0

0.567

14.4

0.311 – 0.429

7.9 – 10.9

13" Dia

July 1999, Rev. C

SuperSOT^TM-6 Tape and Reel Data and Package Dimensions, continued

SuperSOT -6 (FS PKG Code 31, 33)

1:1

Scale 1:1 on letter size paper

Dimensions shown below are in:

inches [millimeters]

Part Weight per unit (gram): 0.0158

1998 Fairchild Semiconductor Corporation

September 1998, Rev. A

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

ACEx™

CoolFET™

ISOPLANAR™

MICROWIRE™

POP™

PowerTrench

QFET™

SyncFET™

TinyLogic™

UHC™

CROSSVOLT™

E²CMOS^TM

VCX™

FACT™

FACT Quiet Series™

QS™

FAST^®

Quiet Series™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

FASTr™

GTO™

HiSeC™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or

In Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. D

NDC7003P相关文章

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NDC7003P产品参数

型号:	NDC7003P
是否Rohs认证：	不符合
生命周期：	Transferred
IHS 制造商：	NATIONAL SEMICONDUCTOR CORP
包装说明：	SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code：	unknown
ECCN代码：	EAR99
风险等级：	5.81
Is Samacsys：	N
配置：	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：	50 V
最大漏极电流 (Abs) (ID)：	0.34 A
最大漏极电流 (ID)：	0.34 A
最大漏源导通电阻：	5 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G6
JESD-609代码：	e0
元件数量：	2
端子数量：	6
工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
极性/信道类型：	P-CHANNEL
功耗环境最大值：	1.4 W
最大功率耗散 (Abs)：	0.96 W
认证状态：	Not Qualified
子类别：	Other Transistors
表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)
端子形式：	GULL WING
端子位置：	DUAL
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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