NDS9933现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

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产品型号NDS9933的概述

NDS9933芯片概述 NDS9933是一款高性能的模拟信号处理芯片，主要应用于信号调理、传感器接口和音频处理等领域。该芯片具有灵活的配置选项和较高的精度，适合广泛的工业和消费电子产品。其低功耗和小封装设计使其成为便携设备和嵌入式系统的理想选择。随着科技的不断进步，NDS9933因其独特的技术优势逐渐在多个应用场景中崭露头角。 NDS9933的详细参数 NDS9933芯片的技术参数如下： 1. 电源电压：3.3V到5V。 2. 功耗：典型工作功耗为20mA，待机功耗仅为1μA。 3. 工作温度范围：-40°C至+85°C，适合各种环境条件。 4. 输入信号类型：支持多种模拟信号的输入，包括差分信号和单端信号，输入范围为0V至Vcc。 5. 输出信号类型：具有模拟输出，支持PWM控制。 6. 转换速率：具有45kHz的信号采样率，适合实时应用。 7. 分辨率：12位ADC分辨率，确保高精...

产品型号NDS9933的Datasheet PDF文件预览

January 1999

NDS9933A

Dual P-Channel Enhancement Mode Field Effect Transistor

Features

General Description

This P-Channel enhancement mode power field ef-

fect transistor is produced using Fairchild’s propri-

etary, high cell density, DMOS technology. This very

high density process is especially tailored to mini-

mize on-state resistance and provide superior

switching performance.

• -2.8 A, -20 V. R_DS(on)= 0.14 Ω @ V_GS= -4.5 V

R_DS(on)= 0.19 Ω @ V_GS= -2.7 V

R_DS(on)= 0.20 Ω @ V_GS= -2.5 V.

• High density cell design for extremely low R_DS(on)

These devices are particularly suited for low voltage

apllications such as DC motor control and DC/

DC conversion where fast switching,low in-line

power loss, and resistance to transients are

needed.

•High power and current handling capability in a

widely used surface mount package.

• Dual MOSFET in surface mount package.

SO-8

T_A= 25°C unless otherwise noted

Absolute Maximum Ratings

Symbol

Parameter

NDS9933A

Units

V_DSS

V_GSS

I_D

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous

- Pulsed

-20

(Note 1a)

-2.8

-10

P_D

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

1.6

0.9

(Note 1c)

T_J, T_stg

Operating and Storage Junction Temperature Range

-55 to +150

Thermal Characteristics

(Note 1a)

(Note 1)

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

C/W

Package Outlines and Ordering Information

Device Marking

Device

Reel Size

Tape Width

Quantity

NDS9933A

13’’

12mm

2500 units

1999 Fairchild Semiconductor Corporation

NDS9933ARev. A

Electrical Characteristics

T_A= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BV_DSS

Drain-Source Breakdown Voltage

-20

_GS= 0 V, I_D= -250 A

BV^DSS

Breakdown Voltage Temperature

Coefficient

-25

mV/ C

I_D= -250 A, Referenced to 25 C

∆

T_J

I_DSS

Zero Gate Voltage Drain Current

V_DS= -16 V, V_GS= 0 V

-1

I_GSSF

I_GSSR

Gate-Body Leakage Current, Forward V_GS= 8 V, V_DS= 0 V

Gate-Body Leakage Current, Reverse V_GS= -8 V, V_DS= 0 V

100

-100

On Characteristics (Note 2)

V_GS(th)

Gate Threshold Voltage

-0.4 -0.65

-1

_DS= V_GS, I_D= -250 A

Gate Threshold Voltage

Temperature Coefficient

∆

GS(th)

_D= -250 A, Referenced to 25 C

mV/ C

∆

T_J

R_DS(on)

Static Drain-Source

On-Resistance

V_GS= -4.5 V, I_D= -2.8 A

V_GS= -4.5 V, I_D= -2.8A,T_J=125 C

V_GS= -2.7 V, I_D= -1.5 A

0.10 0.140

0.240

0.15 0.190

Ω

0.13

0.200

V_GS= -2.5 V, I_D= -1.5 A

0.14

I_D(on)

g_FS

On-State Drain Current

V_GS= -4.5 V, V_DS= -5 V

V_DS= -5 V, I_D= -2.8 A

-10

Forward Transconductance

6.5

Dynamic Characteristics

C_iss

C_oss

C_rss

Input Capacitance

_DS= -10 V, V_GS= 0 V,

405

170

f = 1.0 MHz

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics (Note 2)

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

_DD= -5 V, I_D= -1 A,

6.5

8.5

Ω

V_GS= -4.5 V, R_GEN= 6

Q_g

_DS= -5 V, I_D= -2.8 A,

V_GS= -4.5 V,

Q_gs

Q_gd

0.8

1.3

Drain-Source Diode Characteristics and Maximum Ratings

I_S

Maximum Continuous Drain-Source Diode Forward Current

-1.3

(Note 2)

V_SD

Drain-Source Diode Forward Voltage V_GS= 0 V, I_S= -1.3 A

-0.78 -1.2

Notes:

_θJAis the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. R_θJCis guaranteed by design while R_θJAis determined by the user's board design.

c. 135^OC/W on a 0.003 in²

pad of 2oz copper.

a. 78^OC/W on a 0.5 in²

pad of 2oz copper.

b. 125^OC/W on a 0.02 in²

pad of 2oz copper.

Scale

1 : 1 on letter size paper

2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

NDS9933ARev. A

Typical Characteristics

1.8

1.6

1.4

1.2

V_GS= -4.5V

-4.0

-3.5

-3.0

-2.7

V_GS= -2.0V

-2.5

-2.7

-3.0

-2.0

-3.5

-4.0

-4.5

-1.5

0.8

-I , DRAIN CURRENT (A)

-V , DRAIN-SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation

with Drain Current and Gate Voltage.

0.5

1.6

1.4

1.2

I_D= -2.8A

I_D= -1.4A

V_GS= -4.5V

0.4

0.3

0.2

0.1

T = 125°C

25°C

0.8

0.6

-50

-25

100

125

150

, JUNCTION TEMPERATURE (°C)

-V ,GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation

with Temperature.

Figure 4. On-Resistance Variation

with Gate-to-Source Voltage.

V_GS= 0V

V_DS= -5V

T_A= -55°C

25°C

125°C

T = 125°C

0.1

25°C

-55°C

0.01

0.001

0.0001

0.2

0.4

0.6

0.8

1.2

1.4

-V , BODY DIODE FORWARD VOLTAGE (V)

-V , GATE TO SOURCE VOLTAGE (V)

Figure 6. Body Diode Forward Voltage

Variation with Source Current

and Temperature.

Figure 5. Transfer Characteristics.

NDS9933ARev. A

Typical Characteristics (continued)

1000

I _D= -2.8A

600

400

V_DS= -5V

-15V

iss

200

100

oss

rss

f = 1 MHz

V_GS= 0 V

0.1

0.2

0.5

-V , DRAIN TO SOURCE VOLTAGE (V)

, GATE CHARGE (nC)

Figure 7. Gate-Charge Characteristics.

Figure 8. Capacitance Characteristics.

SINGLE PULSE

R_θJA =135 °C/W

= 25°C

0.5

V_GS= -4.5V

SINGLE PULSE

R _JA=135°C/W

0.1

0.05

= 25°C

0.01

0.1

0.5

50 100

300

0.2

0.5

SINGLE PULSE TIME (SEC)

- V , DRAIN-SOURCE VOLTAGE (V)

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

D = 0.5

0.2

0.5

0.2

0.1

(t) = r(t) * R

θJA

= 135°C/W

0.1

0.05

θJA

0.05

0.02

0.01

Single Pulse

P(pk)

0.02

0.01

t₁

t₂

0.005

T - T = P * R

(t)

θJA

Duty Cycle, D = t₁/t₂

0.002

0.001

0.0001

0.001

0.01

0.1

, TIME (sec)

100

300

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1.

Transient themal response will change depending on the circuit board design.

NDS9933ARev. A

SO-8 Tape and Reel Data and Package Dimensions

SOIC(8lds) Packaging

Configuration: Figure 1.0

Packaging Description:

SOIC-8 parts are shipped in tape. The carrier tape is

ELECTROSTATIC

SENSITIVE DEVICES

DO NO

RO NG

CTROS

ATIC

made from dissipative (carbon filled) polycarbonate

CTRO

AGN

AG NE

R R ADIO ACTIVE FI ELD S

TNR DATE

PT NUMB E

resin. The cover tape is a multilayer film (Heat Activated

Adhesive in nature) primarily composed of polyester film,

adhesive layer, sealant, and anti-static sprayed agent.

These reeled parts in standard option are shipped with

2,500 units per 13" or 330cm diameter reel. The reels are

dark blue in color and is made of polystyrene plastic (anti-

static coated). Other option comes in 500 units per 7" or

177cm diameter reel. This and some other options are

further described in the Packaging Information table.

PEEL STRENGTH MIN ______________gms

MAX _____________gms

Antistatic Cover Tape

ESD Label

These full reels are individually barcode labeled and

placed inside

a standard intermediate box (illustrated in

figure 1.0) made of recyclable corrugated brown paper.

One box contains two reels maximum. And these boxes

are placed inside

comes in different sizes depending on the number of parts

shipped.

a barcode labeled shipping box which

Static Dissipative

Embossed Carrier Tape

F63TNR

Label

NDS

9959

852

Customized

Label

Pin 1

SOIC (8lds) Packaging Information

Standard

L86Z

F011

D84Z

Packaging Option

(no flow code)

SOIC-8 Unit Orientation

Packaging type

TNR

2,500

Rail/Tube

TNR

4,000

TNR

500

Qty per Reel/Tube/Bag

Reel Size

13" Dia

7" Dia

Box Dimension (mm)

Max qty per Box

343x64x343 530x130x83 343x64x343 184x187x47

5,000

0.0774

0.6060

30,000

0.0774

8,000

0.0774

0.9696

1,000

0.0774

0.1182

Weight per unit (gm)

Weight per Reel (kg)

Note/Comments

343mm x 342mm x 64mm

Standard Intermediate box

ESD Label

F63TNR Label sample

F63TNLabel

ESD Label

F63TN Label

LOT: CBVK741B019

FSID: FDS9953A

QTY: 2500

SPEC:

D/C1: D9842

D/C2:

QTY1:

QTY2:

SPEC REV:

CPN:

N/F: F

(F63TNR)3

SOIC(8lds) Tape Leader and Trailer

Configuration: Figure 2.0

Carrier Tape

Cover Tape

Components

Trailer Tape

Leader Tape

640mm minimum or

80 empty pockets

1680mm minimum or

210 empty pockets

July 1999, Rev. B

SO-8 Tape and Reel Data and Package Dimensions, continued

SOIC(8lds) Embossed Carrier Tape

Configuration: Figure 3.0

User Direction of Feed

Dimensions are in millimeter

Pkg type

0.450

+/-

0.150

(8lds)

SOIC

(12mm)

6.50

+/-0.10

5.30

+/-0.10

12.0

+/-0.3

1.55

+/-0.05

1.60

+/-0.10

1.75

+/-0.10

10.25

min

5.50

+/-0.05

8.0

+/-0.1

4.0

+/-0.1

2.1

+/-0.10

9.2

+/-0.3

0.06

+/-0.02

Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481

rotational and lateral movement requirements (see sketches A, B, and C).

0.5mm

maximum

20 deg maximum

Typical

component

cavity

center line

0.5mm

maximum

20 deg maximum component rotation

Typical

component

center line

Sketch A (Side or Front Sectional View)

Component Rotation

Sketch C (Top View)

Component lateral movement

Sketch B (Top View)

Component Rotation

SOIC(8lds) Reel Configuration: Figure 4.0

W1 Measured at Hub

Dim A

Max

Dim A

max

See detail AA

Dim N

7"Diameter Option

B Min

Dim C

See detail AA

Dim D

min

13" Diameter Option

W2 max Measured at Hub

DETAIL AA

Dim W2

Dimensions are in inches and millimeters

Reel

Option

Tape Size

12mm

Dim A

Dim B

Dim C

Dim D

Dim N

Dim W1

Dim W3 (LSL-USL)

7.00

177.8

0.059

1.5

512 +0.020/-0.008

13 +0.5/-0.2

0.795

20.2

2.165

0.488 +0.078/-0.000

12.4 +2/0

0.724

18.4

0.469 – 0.606

11.9 – 15.4

7" Dia

13.00

330

0.059

1.5

512 +0.020/-0.008

13 +0.5/-0.2

0.795

20.2

7.00

178

0.488 +0.078/-0.000

12.4 +2/0

0.724

18.4

0.469 – 0.606

11.9 – 15.4

12mm

13" Dia

1998 Fairchild Semiconductor Corporation

July 1999, Rev. B

SO-8 Tape and Reel Data and Package Dimensions, continued

SOIC-8 (FS PKG Code S1)

1 : 1

Scale 1:1 on letter size paper

Dimensions shown below are in:

inches [millimeters]

Part Weight per unit (gram): 0.0774

September 1998, Rev. A

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

ACEx™

CoolFET™

ISOPLANAR™

MICROWIRE™

POP™

PowerTrench

QFET™

SyncFET™

TinyLogic™

UHC™

CROSSVOLT™

E²CMOS^TM

VCX™

FACT™

FACT Quiet Series™

QS™

FAST^®

Quiet Series™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

FASTr™

GTO™

HiSeC™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or

In Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. D

NDS9933相关文章

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NDS9933产品参数

型号:	NDS9933
是否Rohs认证：	不符合
生命周期：	Obsolete
IHS 制造商：	NATIONAL SEMICONDUCTOR CORP
Reach Compliance Code：	unknown
ECCN代码：	EAR99
HTS代码：	8541.29.00.95
风险等级：	5.78
配置：	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：	20 V
最大漏极电流 (Abs) (ID)：	3.2 A
最大漏极电流 (ID)：	3.2 A
最大漏源导通电阻：	0.11 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G8
JESD-609代码：	e0
元件数量：	2
端子数量：	8
工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	2 W
最大脉冲漏极电流 (IDM)：	10 A
认证状态：	Not Qualified
子类别：	Other Transistors
表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
最大关闭时间（toff）：	110 ns
最大开启时间（吨）：	120 ns
Base Number Matches：	1

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