NSQA6V8AW5T2G中文资料应用文章市场行情现货热卖使用介绍-中国IC网-芯三七

当前位置：IC37首页_>N字母起始型号索引_>N字母起始型号索引第137页更新时间：2024-12-11 16:42:04

产品型号NSQA6V8AW5T2G的概述

芯片NSQA6V8AW5T2G的概述 NSQA6V8AW5T2G是一款高性能集成电路芯片，广泛应用于消费电子、工业自动化、通讯设备和汽车电子等领域。由于其卓越的处理能力和多功能性，该芯片在市场上获得了广泛的认可。为了满足不断增长的技术需求，NSQA6V8AW5T2G的设计充分考虑了功耗、处理速度、接口兼容性等多个重要因素。芯片NSQA6V8AW5T2G的详细参数芯片NSQA6V8AW5T2G具有以下详细参数： - 工作电压：2.7V - 3.6V - 功耗：通常在100mW到300mW之间，具体依赖于具体应用场景 - 工作温度范围：-40°C至85°C，适用于极端环境 - 处理器核心：ARM Cortex-M4，主频可达120MHz - 存储器：集成512KB闪存和128KB SRAM - 外部接口： - 1个SPI接口 - 2个I2C接口 - 3个UART...

产品型号NSQA6V8AW5T2G的Datasheet PDF文件预览

NSQA6V8AW5T2 Series

Low Capacitance

Quad Array for

ESD Protection

This integrated transient voltage suppressor device (TVS) is

designed for applications requiring transient overvoltage protection. It

is intended for use in sensitive equipment such as computers, printers,

business machines, communication systems, medical equipment, and

other applications. Its integrated design provides very effective and

reliable protection for four separate lines using only one package.

These devices are ideal for situations where board space is at a

premium.

http://onsemi.com

Features

• ESD Protection: IEC61000−4−2: Level 4

MILSTD 883C − Method 3015−6: Class 3

• Four Separate Unidirectional Configurations for Protection

• Low Leakage Current < 1 mA

• Power Dissipation: 380 mW

• Small SC−88A SMT Package

• Low Capacitance

SC−88A/SOT−323

CASE 419A

• Pb−Free Package is Available

MARKING DIAGRAM

Benefits

• Provides Protection for ESD Industry Standards: IEC 61000, HBM

• Protects the Line Against Transient Voltage Conditions in Either

Direction

• Minimize Power Consumption of the System

• Minimize PCB Board Space

= H for NSQA6V8AW5T2

X for NSQA12VAW5T2

= One Digit Date Code

Typical Applications

• Instrumentation Equipment

• Serial and Parallel Ports

• Microprocessor Based Equipment

• Notebooks, Desktops, Servers

• Cellular and Portable Equipment

ORDERING INFORMATION

†

Device

NSQA6V8AW5T2

Package

Shipping

SC−88A 3000/Tape & Reel

NSQA6V8AW5T2G SC−88A 3000/Tape & Reel

(Pb−Free)

NSQA12VAW5T2

SC−88A 3000/Tape & Reel

NSQA12VAW5T2G SC−88A 3000/Tape & Reel

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

November, 2004 − Rev. 3

NSQA6V8AW5T2/D

NSQA6V8AW5T2 Series

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Peak Power Dissipation

8 20 msec Double Exponential Waveform (Note 1)

Steady State Power − 1 Diode (Note 2)

380

Thermal Resistance −

Junction−to−Ambient

Above 25°C, Derate

327

3.05

°C/W

mW/°C

Operating Junction Temperature Range

Storage Temperature Range

−40 to +125

−55 to +150

260

°C

stg

Lead Solder Temperature − Maximum 10 Seconds Duration

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit

values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,

damage may occur and reliability may be affected.

1. Non−repetitive current pulse per Figure 1.

2. Only 1 diode under power. For all 4 diodes under power, P will be 25%. Mounted on FR4 board with min pad.

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

NSQA6V8AW5T2

Characteristic

Symbol

Min

6.4

−

Typ

6.8

−

Max

7.1

1.0

Unit

Breakdown Voltage (I = 1 mA) (Note 3)

Leakage Current (V

= 5.0 V)

RWM

Clamping Voltage 1 (I = 1.6 A, 8 20 msec Waveform)

−

Maximum Peak Pulse Current (8 20 msec Waveform)

−

1.6

Junction Capacitance − (V = 0 V, f = 1 MHz)

−

6.7

9.5

− (V = 3.0 V, f = 1 MHz)

NSQA12VAW5T2

Breakdown Voltage (I = 5 mA) (Note 3)

11.4

−

12.0

−

12.7

0.05

Leakage Current (V

= 9.0 V)

RWM

Zener Impedence (I = 5 mA)

−

Clamping Voltage 1 (I = 0.9 A, 8 20 msec Waveform)

−

Maximum Peak Pulse Current (8 20 msec Waveform)

−

0.9

Junction Capacitance − (V = 0 V, f = 1 MHz)

−

3. V is measured at pulse test current I .

http://onsemi.com

NSQA6V8AW5T2 Series

100

110

100

125

150

100

1000

t, TIME (ms)

T , AMBIENT TEMPERATURE (°C)

Figure 2. Power Derating Curve

Figure 1. Pulse Width

0.16

0.14

0.12

0.10

0.08

0.06

0.04

T = 25°C

6 V

12 V

0.02

−60 −40 −20

100

T, TEMPERATURE (°C)

BIAS VOLTAGE (V)

Figure 3. Reverse Leakage versus

Temperature

Figure 4. Capacitance

100

PEAK VALUE I

@ 8 ms

RSM

PULSE WIDTH (t ) IS DEFINED

AS THAT POINT WHERE THE

PEAK CURRENT DECAY = 8 ms

0.1

HALF VALUE I

/2 @ 20 ms

RSM

0.01

T = 25°C

0.001

0.6

0.8

1.0

1.2

1.4

1.6

1.8

V , FORWARD VOLTAGE (V)

t, TIME (ms)

Figure 6. Forward Voltage

Figure 5. 8 × 20 ms Pulse Waveform

http://onsemi.com

NSQA6V8AW5T2 Series

PACKAGE DIMENSIONS

SC−88A/SOT−323

5−LEAD PACKAGE

CASE 419A−02

ISSUE G

NOTES:

1. DIMENSIONING AND TOLERANCING

PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 419A−01 OBSOLETE. NEW STANDARD

419A−02.

4. DIMENSIONS A AND B DO NOT INCLUDE

MOLD FLASH, PROTRUSIONS, OR GATE

BURRS.

−B−

INCHES

DIM MIN MAX

MILLIMETERS

MIN

1.80

1.15

0.80

0.10

MAX

2.20

1.35

1.10

0.30

0.071

0.045

0.031

0.004

0.087

0.053

0.043

0.012

0.2 (0.008)

D 5 PL

0.026 BSC

0.65 BSC

−−−

0.004

0.010

0.012

−−−

0.10

0.25

0.30

0.008 REF

0.20 REF

0.079

0.087

2.00

2.20

SOLDERING FOOTPRINT*

0.50

0.0197

0.65

0.025

0.65

0.025

0.40

0.0157

1.9

0.0748

inches

SCALE 20:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

ON Semiconductor Website: http://onsemi.com

Order Literature: http://www.onsemi.com/litorder

Literature Distribution Center for ON Semiconductor

P.O. Box 61312, Phoenix, Arizona 85082−1312 USA

Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada

Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

Japan: ON Semiconductor, Japan Customer Focus Center

2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051

Phone: 81−3−5773−3850

For additional information, please contact your

local Sales Representative.

NSQA6V8AW5T2/D

http://onsemi.com

NSQA6V8AW5T2G相关文章

配单直通车

深圳市中利达电子科技有限公司服务专线: 0755-13686833545 在线联系:

QQ：1902134819 复制

QQ：2881689472 复制

首天国际（深圳）科技有限公司服务专线: 0755-82807802/82807803 在线联系:

QQ：528164397 复制

QQ：1318502189 复制

深圳市芯福林电子有限公司服务专线: 13418564337 在线联系:

QQ：2881495808 复制

QQ：308365177 复制

北京元坤伟业科技有限公司服务专线: 010-62104931621064316210489162104791 在线联系:

QQ：857273081 复制

QQ：1594462451 复制

柒号芯城电子商务（深圳）有限公司服务专线: 18922803401 在线联系:

QQ：2881677436 复制

QQ：2881620402 复制

NSQA6V8AW5T2G产品参数

型号:	NSQA6V8AW5T2G
是否无铅：	含铅
生命周期：	Active
IHS 制造商：	ROCHESTER ELECTRONICS LLC
零件包装代码：	SC-88A
包装说明：	LEAD FREE, CASE 419A-02, SC-70, SC-88A, 5 PIN
针数：	5
制造商包装代码：	CASE 419A-02
Reach Compliance Code：	unknown
风险等级：	5.79
Is Samacsys：	N
其他特性：	LOW CAPACITANCE, LOW LEAKAGE CURRENT
最大击穿电压：	7.1 V
最小击穿电压：	6.4 V
配置：	COMMON ANODE, 4 ELEMENTS
二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：	R-PDSO-G5
JESD-609代码：	e3
湿度敏感等级：	NOT SPECIFIED
最大非重复峰值反向功率耗散：	20 W
元件数量：	4
端子数量：	5
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性：	UNIDIRECTIONAL
最大功率耗散：	0.38 W
认证状态：	COMMERCIAL
最大重复峰值反向电压：	5 V
表面贴装：	YES
技术：	AVALANCHE
端子面层：	MATTE TIN
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	40
Base Number Matches：	1

电子百科

产品导航

产品型号NSQA6V8AW5T2G的概述

产品型号NSQA6V8AW5T2G的Datasheet PDF文件预览

NSQA6V8AW5T2G相关产品

NSQA6V8AW5T2G相关文章

IC37:专业IC行业平台