NTJD5121NT1G全新原装原理图各脚功能电路原理芯片引脚定义-中国IC网-芯三七

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产品型号NTJD5121NT1G的概述

芯片NTJD5121NT1G的概述 NTJD5121NT1G是一款由NXP半导体公司生产的高性能集成电路，主要应用于存储器和其他数字电路的设计中。这款芯片的特点在于其高工作频率、低功耗和优越的抗干扰能力，使其在各种电子设备中获得了广泛的应用。NTJD5121NT1G针对多种协议和接口提供了高度的兼容性，能够满足现代电子设备对高速和高效能的需求。芯片NTJD5121NT1G的详细参数从技术参数上来看，NTJD5121NT1G是一款支持多种工作模式的芯片。以下是其主要参数： - 存储容量：512Mb - 接口类型：单端/差分接口 - 工作电压：2.7V至3.6V - 工作温度范围：-40℃至105℃ - 封装类型：FBGA - 最大频率：200MHz - 数据传输速率：高达1Gb/s 这些参数表明，NTJD5121NT1G的性能非常适合用于需要高速度和高带宽的应用场景，例如智能手机、平...

产品型号NTJD5121NT1G的Datasheet PDF文件预览

NTJD5121N

Power MOSFET

60 V, 295 mA, Dual N-Channel with ESD

Protection, SC-88

Features

•ꢀLow R

DS(on)

http://onsemi.com

•ꢀLow Gate Threshold

•ꢀLow Input Capacitance

•ꢀESD Protected Gate

•ꢀThis is a Pb-Free Device

MAX

I Max

(BR)DSS

DS(on)

1.6 W @ 10 V

2.5 W @ 4.5 V

295 mA

60 V

Applications

•ꢀLow Side Load Switch

•ꢀDC-DC Converters (Buck and Boost Circuits)

SC-88 (SOT-363)

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Parameter

Drain-to-Source Voltage

Symbol

Value Units

DSS

Gate-to-Source Voltage

Continuous Drain

Current (Note 1)

Steady T = 25°C

295

212

304

219

250

State

T = 85°C

t ≤ 5 s T = 25°C

Top View

T = 85°C

MARKING DIAGRAM &

PIN ASSIGNMENT

D1 G2 S2

Power Dissipation

(Note 1)

Steady T = 25°C

State

t ≤ 5 s

266

900

Pulsed Drain Current

t = 10 ms

TF MꢀG

SC-88/SOT-363

CASE 419B

STYLE 26

Operating Junction and Storage Temperature

T , T

-55 to

150

°C

STG

Source Current (Body Diode)

210

260

S1 G1 D2

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

°C

= Device Code

= Date Code

= Pb-Free Package

Gate-Source ESD Rating

(HBM, Method 3015)

ESD

1400

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

(Note: Microdot may be in either location)

ORDERING INFORMATION

THERMAL RESISTANCE RATINGS

†

Device

Package

Shipping

Parameter

Symbol

Value Units

NTJD5121NT1G

SC-88

(Pb-Free)

3000 / Tape & Reel

Junction-to-Ambient – Steady State

Junction-to-Ambient – t ≤ 5 s

500

470

°C/W

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

1. Surface mounted on FR4 board using 1 in sq pad size

(Cu area = 1.127 in sq [2 oz] including traces).

©ꢀ Semiconductor Components Industries, LLC, 2008

April, 2008 - Rev. 1

Publication Order Number:

NTJD5121N/D

NTJD5121N

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage

= 0 V, I = 250 mA

(BR)DSS

Drain-to-Source Breakdown Voltage

Temperature Coefficient

I = 250 mA, ref to 25°C

mV/°C

(BR)DSS

Zero Gate Voltage Drain Current

= 0 V,

= 60 V

T = 25°C

1.0

500

DSS

T = 125°C

Gate-to-Source Leakage Current

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

= 0 V, V

= 20 V

GSS

= V , I = 250 mA

DS D

1.0

1.7

4.0

2.5

GS(TH)

Negative Threshold Temperature

Coefficient

mV/°C

GS(TH)

Drain-to-Source On Resistance

= 10 V, I = 500 mA

1.0

1.2

1.6

2.5

DS(on)

= 4.5 V, I = 200 mA

Forward Transconductance

CHARGES AND CAPACITANCES

Input Capacitance

= 5 V, I = 200 mA

4.4

2.5

0.9

0.2

0.3

0.28

ISS

= 0 V, f = 1.0 MHz,

= 20 V

Output Capacitance

OSS

RSS

Reverse Transfer Capacitance

Total Gate Charge

G(TOT)

Threshold Gate Charge

Gate-to-Source Charge

Gate-to-Drain Charge

G(TH)

= 4.5 V, V = 25 V,

= 200 mA

SWITCHING CHARACTERISTICS (Note 3)

Turn-On Delay Time

Rise Time

d(on)

= 45 V, V = 25 V,

= 200 mA, R = 25 W

Turn-Off Delay Time

Fall Time

d(off)

DRAIN-SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

= 0 V,

I = 200 mA

T = 25°C

0.8

0.7

1.2

T = 85°C

2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperatures.

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NTJD5121N

TYPICAL PERFORMANCE CURVES (T = 25°C unless otherwise noted)

1.6

1.2

0.8

0.4

1.2

T = 25°C

= 10

5 V

≥ 10 V

0.8

0.6

0.4

0.2

4.5 V

4.2 V

4 V

3.8 V

3.6 V

3.4 V

3.2 V

2.4 V

2.2 V

3 V

25°C

2.8 V

2.6 V

T = 125°C

-55°C

, DRAIN-TO-SOURCE VOLTAGE (V)

, GATE-TO-SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

2.4

= 4.5 V

= 10 V

T = 125°C

T = 85°C

T = 125°C

1.6

1.2

0.8

0.4

1.6

1.2

0.8

0.4

T = 85°C

T = 25°C

T = -55°C

0.2

0.4

0.6

0.8

0.2

0.4

0.6

0.8

DRAIN CURRENT (A)

Figure 3. On-Resistance vs. Drain Current and

Temperature

Figure 4. On-Resistance vs. Drain Current and

Temperature

2.4

1.8

1.6

1.4

1.2

= 0.2 A

= 4.5 V and 10 V

= 500 mA

1.6

1.2

0.8

4.5 V

10 V

= 200 mA

0.8

0.6

-50

-25

100

125 150

, GATE-TO-SOURCE VOLTAGE (V)

T , JUNCTION TEMPERATURE (°C)

Figure 5. On-Resistance versus

Gate-to-Source Voltage

Figure 6. On-Resistance Variation with

Temperature

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NTJD5121N

TYPICAL PERFORMANCE CURVES (T = 25°C unless otherwise noted)

T = 25°C

= 0.2 A

= 0 V

T = 25°C

= 25 V

iss

oss

rss

0.2

0.4

0.6

0.8

DRAIN-TO-SOURCE VOLTAGE (V)

Q , TOTAL GATE CHARGE (nC)

Figure 7. Capacitance Variation

Figure 8. Gate-to-Source and

Drain-to-Source Voltage vs. Total Charge

= 0 V

0.1

T = 85°C

T = 25°C

0.01

0.4

0.6

0.8

1.2

, SOURCE-TO-DRAIN VOLTAGE (V)

Figure 9. Diode Forward Voltage vs. Current

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NTJD5121N

PACKAGE DIMENSIONS

SC-88/SC70-6/SOT-363

CASE 419B-02

ISSUE W

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 419B-01 OBSOLETE, NEW STANDARD 419B-02.

MILLIMETERS

DIM MIN NOM MAX

0.80

INCHES

MIN

NOM MAX

0.95

0.05

1.10 0.031 0.037 0.043

0.10 0.000 0.002 0.004

0.008 REF

A1 0.00

0.20 REF

0.21

0.14

2.00

1.25

0.65 BSC

0.20

2.10

-E-

0.10

1.80

1.15

0.30 0.004 0.008 0.012

0.25 0.004 0.005 0.010

2.20 0.070 0.078 0.086

1.35 0.045 0.049 0.053

0.026 BSC

0.10

2.00

0.30 0.004 0.008 0.012

2.20 0.078 0.082 0.086

b 6 PL

STYLE 26:

0.2 (0.008)

PIN 1. SOURCE 1

2. GATE 1

3. DRAIN 2

4. SOURCE 2

5. GATE 2

6. DRAIN 1

SOLDERING FOOTPRINT*

0.50

0.0197

0.65

0.025

0.65

0.025

0.40

0.0157

1.9

0.0748

inches

SCALE 20:1

*For additional information on our Pb-Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer

purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800-282-9855 Toll Free

ꢁUSA/Canada

Europe, Middle East and Africa Technical Support:

ꢁPhone: 421 33 790 2910

Japan Customer Focus Center

ꢁPhone: 81-3-5773-3850

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

ꢁLiterature Distribution Center for ON Semiconductor

ꢁP.O. Box 5163, Denver, Colorado 80217 USA

ꢁPhone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada

ꢁFax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada

ꢁEmail: orderlit@onsemi.com

For additional information, please contact your local

Sales Representative

NTJD5121N/D

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NTJD5121NT1G产品参数

型号:	NTJD5121NT1G
Brand Name：	ON Semiconductor
是否无铅：	不含铅
生命周期：	Active
IHS 制造商：	ON SEMICONDUCTOR
零件包装代码：	SC-88
包装说明：	SMALL OUTLINE, R-PDSO-G6
针数：	6
制造商包装代码：	419B-02
Reach Compliance Code：	compliant
ECCN代码：	EAR99
Factory Lead Time：	16 weeks
风险等级：	1.48
Samacsys Confidence：	3
Samacsys Status：	Released
Samacsys PartID：	226828
Samacsys Pin Count：	6
Samacsys Part Category：	Transistor
Samacsys Package Category：	SOT23 (6-Pin)
Samacsys Footprint Name：	SC-88(SOT-363) CASE 419B-02 ISSUE Y
Samacsys Released Date：	2015-08-31 08:45:49
Is Samacsys：	N
其他特性：	LOW THRESHOLD
配置：	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：	60 V
最大漏极电流 (Abs) (ID)：	0.295 A
最大漏极电流 (ID)：	0.295 A
最大漏源导通电阻：	1.6 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G6
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	2
端子数量：	6
工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	0.266 W
认证状态：	Not Qualified
子类别：	FET General Purpose Power
表面贴装：	YES
端子面层：	Tin (Sn)
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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产品型号NTJD5121NT1G的概述

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