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产品型号NTMFS4C10NT1G的概述

芯片NTMFS4C10NT1G的概述 NTMFS4C10NT1G是一种高效的N沟道场效应晶体管（MOSFET），其主要设计目的是为现代电子电路提供高电流和低导通电阻的解决方案。该芯片的主要应用包括开关电源、DC-DC转换器、电机驱动和各种数字电路等。随着电子产品功率要求的不断提高以及工作频率的增加，NTMFS4C10NT1G凭借其优良的电气特性，在市场上得到了广泛的关注和应用。芯片NTMFS4C10NT1G的详细参数 NTMFS4C10NT1G的关键电气参数如下： 1. 最大漏极源电压(VDS): 30V 2. 最大漏极电流(ID): 90A 3. 导通电阻(RDS(on)): 0.0075Ω（在VGS=10V时） 4. 栅极阈值电压(VGS(th)): 1V至3V 5. 栅极电容(Ciss): 1500pF（典型值） 6. 开关时间: 35ns（典型值的上升时间） 7. 关断时间:...

产品型号NTMFS4C10NT1G的Datasheet PDF文件预览

NTMFS4C10N

Power MOSFET

30 V, 46 A, Single N−Channel, SO−8 FL

Features

• Low R

to Minimize Conduction Losses

• Low Capacitance to Minimize Driver Losses

DS(on)

• Optimized Gate Charge to Minimize Switching Losses

http://onsemi.com

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

DS(ON)

MAX

I MAX

(BR)DSS

Applications

6.95 mW @ 10 V

10.8 mW @ 4.5 V

• CPU Power Delivery

• DC−DC Converters

30 V

46 A

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

D (5−8)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

Gate−to−Source Voltage

DSS

Continuous Drain

Current R

T = 25°C

15.0

G (4)

T = 80°C

11.2

2.49

(Note 1)

Power Dissipation

T = 25°C

S (1,2,3)

N−CHANNEL MOSFET

(Note 1)

Continuous Drain

T = 25°C

22.5

16.8

5.6

Current R

(Note 1)

≤ 10 s

T = 80°C

MARKING

DIAGRAM

Power Dissipation

≤ 10 s (Note 1)

T = 25°C

Steady

State

Continuous Drain

Current R

T = 25°C

8.2

6.2

4C10N

AYWZZ

T = 80°C

(Note 2)

SO−8 FLAT LEAD

CASE 488AA

STYLE 1

Power Dissipation

T = 25°C

0.75

(Note 2)

Continuous Drain

Current R

= 25°C

=80°C

= 25°C

= Assembly Location

= Year

(Note 1)

Power Dissipation

23.6

= Work Week

= Lot Traceabililty

(Note 1)

Pulsed Drain

Current

T = 25°C, t = 10 ms

132

Current Limited by Package

T = 25°C

Dmax

ORDERING INFORMATION

Operating Junction and Storage

Temperature

T ,

STG

−55 to

+150

°C

†

Device

Package

Shipping

NTMFS4C10NT1G

SO−8 FL

(Pb−Free)

1500 /

Tape & Reel

Source Current (Body Diode)

Drain to Source dV/dt

7.0

dV/d

V/ns

Single Pulse Drain−to−Source Avalanche

Energy (T = 25°C, V = 10 V, I = 25 A ,

NTMFS4C10NT3G

SO−8 FL

(Pb−Free)

5000 /

Tape & Reel

L = 0.1 mH, R = 25 W) (Note 3)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Lead Temperature for Soldering Purposes

260

°C

(1/8″ from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

3. This is the absolute maximum rating. Parts are 100% tested at T = 25°C,

= 10 V, I = 17 Apk, E = 14 mJ.

L AS

Semiconductor Components Industries, LLC, 2013

Publication Order Number:

May, 2013 − Rev. 3

NTMFS4C10N/D

NTMFS4C10N

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

5.3

Unit

Junction−to−Case (Drain)

Junction−to−Ambient – Steady State (Note 4)

Junction−to−Ambient – Steady State (Note 5)

Junction−to−Ambient – (t ≤ 10 s) (Note 4)

50.3

165.9

22.2

°C/W

4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

5. Surface−mounted on FR4 board using the minimum recommended pad size.

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

= 0 V, I = 250 mA

(BR)DSS

Drain−to−Source Breakdown Voltage

(transient)

= 0 V, I

= 7.1 A,

= 100 ns

(BR)DSSt

case

D(aval)

= 25°C, t

transient

Drain−to−Source Breakdown Voltage

Temperature Coefficient

14.5

(BR)DSS

mV/°C

Zero Gate Voltage Drain Current

= 0 V,

= 24 V

T = 25°C

1.0

DSS

T = 125°C

Gate−to−Source Leakage Current

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

= 0 V, V

20 V

100

GSS

= V , I = 250 mA

1.3

2.2

GS(TH)

Negative Threshold Temperature Coefficient

Drain−to−Source On Resistance

4.7

5.8

8.9

mV/°C

GS(TH)

= 10 V

= 30 A

= 15 A

6.95

10.8

DS(on)

= 4.5 V

Forward Transconductance

Gate Resistance

= 1.5 V, I = 15 A

T = 25°C

1.0

CHARGES AND CAPACITANCES

Input Capacitance

987

574

162

0.165

9.7

ISS

Output Capacitance

OSS

RSS

= 0 V, f = 1 MHz, V = 15 V

Reverse Transfer Capacitance

Capacitance Ratio

= 0 V, V = 15 V, f = 1 MHz

RSS ISS

Total Gate Charge

G(TOT)

Threshold Gate Charge

Gate−to−Source Charge

Gate−to−Drain Charge

Gate Plateau Voltage

Total Gate Charge

1.5

G(TH)

2.8

= 4.5 V, V = 15 V; I = 30 A

4.8

3.2

= 10 V, V = 15 V; I = 30 A

18.6

G(TOT)

SWITCHING CHARACTERISTICS (Note 7)

Turn−On Delay Time

Rise Time

9.0

d(ON)

= 4.5 V, V = 15 V,

= 15 A, R = 3.0 W

Turn−Off Delay Time

Fall Time

d(OFF)

7.0

6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

7. Switching characteristics are independent of operating junction temperatures.

http://onsemi.com

NTMFS4C10N

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)

Parameter

SWITCHING CHARACTERISTICS (Note 7)

Turn−On Delay Time

Symbol

Test Condition

Min

Typ

Max

Unit

7.0

d(ON)

Rise Time

= 10 V, V = 15 V,

= 15 A, R = 3.0 W

Turn−Off Delay Time

d(OFF)

Fall Time

4.0

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

T = 25°C

0.80

0.67

26.7

14.1

12.6

13.7

1.1

= 0 V,

= 10 A

T = 125°C

Reverse Recovery Time

Charge Time

= 0 V, dI /dt = 100 A/ms,

= 30 A

Discharge Time

Reverse Recovery Charge

6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

7. Switching characteristics are independent of operating junction temperatures.

http://onsemi.com

NTMFS4C10N

TYPICAL CHARACTERISTICS

4.0 V

4.2 V to 10 V

3.8 V

3.6 V

T = 25°C

= 5 V

3.4 V

3.2 V

3.0 V

T = 125°C

2.8 V

2.6 V

T = 25°C

T = −55°C

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

, GATE−TO−SOURCE VOLTAGE (V)

, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

0.020

0.018

0.016

0.014

0.012

0.010

0.008

0.006

0.020

0.018

0.016

0.014

0.012

0.010

0.008

0.006

= 30 A

T = 25°C

= 4.5 V

= 10 V

0.004

0.002

0.004

0.002

3.0

4.0

5.0

6.0

7.0

8.0

9.0

V , GATE−TO−SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

Figure 3. On−Resistance vs. V_GS

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

1.7

1.6

10000

1000

= 0 V

= 30 A

T = 150°C

= 10 V

1.5

1.4

1.3

1.2

1.1

T = 125°C

100

1.0

0.9

0.8

0.7

T = 85°C

−50 −25

100

125 150

, DRAIN−TO−SOURCE VOLTAGE (V)

T , JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Figure 6. Drain−to−Source Leakage Current

Temperature

vs. Voltage

http://onsemi.com

NTMFS4C10N

TYPICAL CHARACTERISTICS

1200

1000

= 0 V

iss

T = 25°C

800

600

400

oss

T = 25°C

= 15 V

= 10 V

rss

200

= 30 A

10 12 14 16 18 20

V , DRAIN−TO−SOURCE VOLTAGE (V)

Q , TOTAL GATE CHARGE (nC)

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

1000

100

= 0 V

= 15 V

= 15 A

= 10 V

d(on)

d(off)

T = 125°C

T = 25°C

R , GATE RESISTANCE (W)

100

0.4

0.5

0.6

0.7

0.8

0.9

1.0

V , SOURCE−TO−DRAIN VOLTAGE (V)

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

100

= 17 A

10 ms

100 ms

1 ms

10 ms

0 V < V < 10 V

Single Pulse

= 25°C

0.1

DS(on)

Limit

Thermal Limit

Package Limit

0.01

0.1

100

125

150

V , DRAIN−TO−SOURCE VOLTAGE (V)

T , STARTING JUNCTION TEMPERATURE (°C)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

Figure 12. Maximum Avalanche Energy vs.

Starting Junction Temperature

http://onsemi.com

NTMFS4C10N

TYPICAL CHARACTERISTICS

100

Duty Cycle = 50%

20%

10%

0.1

Single Pulse

0.01

0.000001 0.00001

0.0001

0.001

0.01

0.1

100

1000

PULSE TIME (sec)

Figure 13. Thermal Response

100

T = 25°C

T = 85°C

(A)

1.E−08 1.E−07

1.E−06

1.E−05

1.E−04 1.E−03

PULSE WIDTH (SECONDS)

Figure 14. G_FSvs. I_D

Figure 15. Avalanche Characteristics

http://onsemi.com

NTMFS4C10N

PACKAGE DIMENSIONS

DFN5 5x6, 1.27P

(SO−8FL)

CASE 488AA

ISSUE H

2 X

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ASME Y14.5M, 1994.

0.20

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION D1 AND E1 DO NOT INCLUDE

MOLD FLASH PROTRUSIONS OR GATE

BURRS.

2 X

MILLIMETERS

0.20

DIM

MIN

0.90

0.00

0.33

0.23

NOM

1.00

−−−

0.41

0.28

MAX

1.10

0.05

0.51

0.33

4 X

5.15 BSC

4.90

4.00

6.15 BSC

5.90

3.65

1.27 BSC

0.61

1.35

0.61

0.17

4.70

3.80

5.10

4.20

5.70

3.45

6.10

3.85

0.51

1.20

0.51

0.05

3.00

0.71

1.50

0.71

0.20

3.80

TOP VIEW

3 X

SEATING

PLANE

0.10

3.40

−−−

DETAIL A

SOLDERING FOOTPRINT*

STYLE 1:

SIDE VIEW

PIN 1. SOURCE

2. SOURCE

3. SOURCE

4. GATE

DETAIL A

1.270

0.750

1.000

8X b

5. DRAIN

0.10

0.05

A B

e/2

0.965

0.²9^X05

0.475

1.330

0.495

4.530

PIN 5

(EXPOSED PAD)

3.200

1.530

BOTTOM VIEW

4.560

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,

copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC

reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any

particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without

limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications

and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC

does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for

surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where

personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and

its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,

any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture

of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

For additional information, please contact your local

Sales Representative

NTMFS4C10N/D

http://onsemi.com

NTMFS4C10NT1G相关文章

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NTMFS4C10NT1G产品参数

型号:	NTMFS4C10NT1G
Brand Name：	ON Semiconductor
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
IHS 制造商：	ON SEMICONDUCTOR
包装说明：	SMALL OUTLINE, R-PDSO-F5
针数：	5
制造商包装代码：	488AA
Reach Compliance Code：	not_compliant
ECCN代码：	EAR99
Factory Lead Time：	12 weeks
风险等级：	0.8
外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	30 V
最大漏极电流 (Abs) (ID)：	46 A
最大漏极电流 (ID)：	8.2 A
最大漏源导通电阻：	0.00695 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-F5
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	1
端子数量：	5
工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	23.6 W
子类别：	FET General Purpose Power
表面贴装：	YES
端子面层：	Tin (Sn)
端子形式：	FLAT
端子位置：	DUAL
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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产品型号NTMFS4C10NT1G的概述

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