NTZD3154NT1G全新原装原理图各脚功能电路原理芯片引脚定义-中国IC网-芯三七

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产品型号NTZD3154NT1G的概述

芯片NTZD3154NT1G的概述 NTZD3154NT1G是一款高度集成的半导体器件，主要用于电力管理和电子开关应用。作为一款场效应晶体管（MOSFET），它适用于各种电源设计和可移动设备中，实现高效的电源转换与开关控制。其设计优点在于具备低导通电阻和快速开关能力，使其能在不同载荷下表现出优秀的性能。 NTZD3154NT1G的设计理念在于满足现代电子产品对快速响应和高效率的需求。它的高开关频率和低能耗使其成为许多应用的理想选择，包括计算机、服务器、电动汽车、以及其他对电源效率有严格要求的产品。芯片NTZD3154NT1G的详细参数 NTZD3154NT1G的电气特性包括： - 最大漏极-源极电压 (V_ds): 30V - 最大电流 (I_d): 54A，基于适当的散热条件。 - 最大功耗 (P_d): 94W，需视散热设计而定。 - 门极阈值电压 (V_gs(th)): 1-2...

产品型号NTZD3154NT1G的Datasheet PDF文件预览

NTZD3154N

Small Signal MOSFET

20 V, 540 mA, Dual N−Channel

Features

• Low R

Improving System Efficiency

http://onsemi.com

DS(on)

• Low Threshold Voltage

• Small Footprint 1.6 x 1.6 mm

• ESD Protected Gate

Typ

I Max (Note 1)

(BR)DSS

DS(on)

400 mW @ 4.5 V

500 mW @ 2.5 V

540 mA

• These are Pb−Free Devices

700 mW @ 1.8 V

Applications

• Load/Power Switches

• Power Supply Converter Circuits

• Battery Management

• Cell Phones, Digital Cameras, PDAs, Pagers, etc.

MAXIMUM RATINGS (T = 25°C unless otherwise noted.)

N−Channel

MOSFET

Parameter

Drain−to−Source Voltage

Symbol Value Unit

DSS

MARKING

DIAGRAM

Gate−to−Source Voltage

6.0

Continuous Drain Current

(Note 1)

T = 25°C

540

390

250

Steady

State

T = 85°C

TV M G

Power Dissipation

(Note 1)

SOT−563−6

CASE 463A

Steady State

Continuous Drain Current

(Note 1)

T = 25°C

570

410

280

= Specific Device Code

= Date Code

= Pb−Free Package

t v 5 s

T = 85°C

Power Dissipation

(Note 1)

t v 5 s

t = 10 ms

(Note: Microdot may be in either location)

Pulsed Drain Current

1.5

PINOUT: SOT−563

Operating Junction and Storage Temperature

T ,

STG

−55 to

150

°C

Source Current (Body Diode)

350

260

Lead Temperature for Soldering Purposes

°C

(1/8″ from case for 10 s)

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Max

Unit

Junction−to−Ambient – Steady State

500

°C/W

(Note 1)

Junction−to−Ambient – t v 5 s (Note 1)

447

Top View

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 in sq pad size

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 4 of this data sheet.

(Cu. area = 1.127 in sq [1 oz] including traces).

Publication Order Number:

March, 2006 − Rev. 1

NTZD3154N/D

NTZD3154N

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)

Parameter

OFF CHARACTERISTICS

Symbol

Test Condition

Min Typ Max

Unit

Drain−to−Source Breakdown Voltage

= 0 V, I = 250 mA

−

(BR)DSS

Drain−to−Source Breakdown Voltage Tem-

perature Coefficient

−

mV/°C

(BR)DSS

−

Zero Gate Voltage Drain Current

T = 25°C

−

1.0

5.0

= 0 V

DSS

= 16 V

T = 125°C

Gate−to−Source Leakage Current

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

= 0 V, V = "4.5 V

"5.0

GSS

= V , I = 250 mA

0.45

−

1.0

−

mV/°C

GS(TH)

Negative Threshold Temperature Coefficient

Drain−to−Source On Resistance

−

2.0

0.4

0.5

0.7

1.0

GS(TH)

= 4.5 V, I = 540 mA

−

0.55

0.7

0.9

−

= 2.5 V, I = 500 mA

−

DS(on)

= 1.8 V, I = 350 mA

−

Forward Transconductance

CHARGES AND CAPACITANCES

Input Capacitance

= 10 V, I = 540 mA

−

150

2.5

−

ISS

Output Capacitance

= 0 V, f = 1.0 MHz, V = 16 V

OSS

RSS

Reverse Transfer Capacitance

Total Gate Charge

1.5

0.1

0.2

0.35

G(TOT)

Threshold Gate Charge

Gate−to−Source Charge

Gate−to−Drain Charge

G(TH)

= 4.5 V, V = 10 V; I = 540 mA

DS D

−

SWITCHING CHARACTERISTICS, V = V (Note 4)

Turn−On Delay Time

Rise Time

−

6.0

4.0

−

d(ON)

= 4.5 V, V = 10 V, I = 540 mA,

DD D

= 10 W

Turn−Off Delay Time

Fall Time

d(OFF)

8.0

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

T = 25°C

−

0.7

0.6

6.5

1.2

−

= 0 V,

= 350 mA

T = 125°C

Reverse Recovery Time

= 0 V, d /d = 100 A/ms, I = 350 mA

−

ISD

2. Surface−mounted on FR4 board using 1 in. sq. pad size (Cu. area = 1.127 in sq [1 oz] including traces).

3. Pulse Test: pulse width v 300 ms, duty cycle v2%.

4. Switching characteristics are independent of operating junction temperatures.

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NTZD3154N

TYPICAL PERFORMANCE CURVES (T = 25°C unless otherwise noted)

1.2

1.0

0.8

0.6

0.4

0.2

1.8

w 10 V

5.5 V

1.8 V

T = 25°C

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

T = −55°C

T = 100°C

= 1.6 V

= 1.4 V

= 2.0 V to 2.2 V

T = 25°C

= 1.2 V

= 1.0 V

0.5

1.0

1.5

2.0

2.5

3.0

, DRAIN−TO−SOURCE VOLTAGE (V)

, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.9

0.8

0.7

0.6

0.5

0.4

0.3

= 0.54 A

T = 25°C

= 1.8 V

= 2.5 V

= 4.5 V

0.2

0.4

0.6

0.8

1.2

, GATE−TO−SOURCE VOLTAGE (V)

I , DRAIN CURRENT (A)

Figure 3. On−Resistance versus

Gate−to−Source Voltage

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

1.8

1.6

1.4

1.2

1000

100

= 0 V

= 0.54 A

= 4.5 V

T = 150°C

T = 100°C

0.8

0.6

−50

−25

100

125

150

T , JUNCTION TEMPERATURE (°C)

, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 5. On−Resistance Variation with

Figure 6. Drain−to−Source Leakage Current

Temperature

versus Voltage

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NTZD3154N

TYPICAL PERFORMANCE CURVES (T = 25°C unless otherwise noted)

200

150

T = 25°C

= 0 V

RSS

100

ISS

0.4

= 0.54 A

T = 25°C

OSS

= 0 V

1.6

0.2

0.6

0.8

1.2

1.4

Q , TOTAL GATE CHARGE (nC)

Figure 8. Gate−to−Source and

Drain−to−Source Voltage versus Total Charge

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)

Figure 7. Capacitance Variation

0.6

100

V = 0 V

T = 25°C

= 10 V

= 0.2 A

= 4.5 V

0.5

0.4

0.3

0.2

0.1

d(OFF

)

d(ON)

R , GATE RESISTANCE (W)

100

0.2

0.3

0.4

, SOURCE−TO−DRAIN VOLTAGE (V)

0.5

0.6

0.7

0.8

0.9

Figure 9. Resistive Switching Time Variation

versus Gate Resistance

Figure 10. Diode Forward Voltage versus

Current

ORDERING INFORMATION

Device

Package

Shipping

NTZD3154NT1G

SOT−563

(Pb−Free)

4000 / Tape & Reel

NTZD3154NT5G

SOT−563

(Pb−Free)

8000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

http://onsemi.com

NTZD3154N

PACKAGE DIMENSIONS

SOT−563, 6 LEAD

CASE 463A−01

ISSUE F

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETERS

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD

FINISH THICKNESS. MINIMUM LEAD THICKNESS

IS THE MINIMUM THICKNESS OF BASE MATERIAL.

−X−

MILLIMETERS

DIM MIN NOM MAX

INCHES

NOM MAX

−Y−

MIN

0.50

0.17

0.08

1.50

1.10

0.55

0.22

0.12

1.60

1.20

0.5 BSC

0.20

0.60 0.020 0.021 0.023

0.27 0.007 0.009 0.011

0.18 0.003 0.005 0.007

1.70 0.059 0.062 0.066

1.30 0.043 0.047 0.051

0.02 BSC

b 56 PL

0.08 (0.003)

X Y

0.10

1.50

0.30 0.004 0.008 0.012

1.60

1.70 0.059 0.062 0.066

SOLDERING FOOTPRINT*

0.3

0.0118

0.45

0.0177

1.0

0.0394

1.35

0.0531

0.5

0.0197 0.0197

inches

SCALE 20:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer

purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

ON Semiconductor Website: http://onsemi.com

Order Literature: http://www.onsemi.com/litorder

Literature Distribution Center for ON Semiconductor

P.O. Box 61312, Phoenix, Arizona 85082−1312 USA

Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada

Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

Japan: ON Semiconductor, Japan Customer Focus Center

2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051

Phone: 81−3−5773−3850

For additional information, please contact your

local Sales Representative.

NTZD3154N/D

http://onsemi.com

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NTZD3154NT1G产品参数

型号:	NTZD3154NT1G
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
包装说明：	1.60 X 1.60 MM, LEAD FREE, CASE 463A-01, 6 PIN
针数：	6
制造商包装代码：	CASE 463A-01
Reach Compliance Code：	unknown
风险等级：	5.09
配置：	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：	20 V
最大漏极电流 (ID)：	0.54 A
最大漏源导通电阻：	0.55 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：	20 pF
JESD-30 代码：	R-PDSO-F6
JESD-609代码：	e3
湿度敏感等级：	NOT SPECIFIED
元件数量：	2
端子数量：	6
工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	N-CHANNEL
认证状态：	COMMERCIAL
表面贴装：	YES
端子面层：	MATTE TIN
端子形式：	FLAT
端子位置：	DUAL
处于峰值回流温度下的最长时间：	40
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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