NUP4201DR2原理图各脚功能电路原理芯片引脚定义引脚图及功能-中国IC网-芯三七

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产品型号NUP4201DR2的概述

芯片NUP4201DR2的概述 NUP4201DR2是一款高灵敏度、低功耗的双极性晶体管级别的开关芯片，主要应用于信号增益、开关控制及各种电子电路的驱动等领域。该芯片拥有多项先进特性，结合了现代集成电路技术，广泛用于消费电子产品、通信设备及工业控制系统等。芯片NUP4201DR2的详细参数 NUP4201DR2的主要参数如下： - 工作电压：通常在2.5V到30V范围内工作，使其在多种应用中表现出色。 - 最大电流：该芯片的输出电流可达500毫安，满足大多数负载驱动需求。 - 工作温度范围：-40°C至+125°C，适应各种复杂环境条件。 - 开关速度：在一定负载下，其开关响应时间可达到数十微秒，这对于需要高速响应的应用场合尤为重要。 - 封装类型：常见的封装形式为SOT-23，适合表面贴装技术（SMD），尤其是在空间受限的应用中。芯片NUP4201DR2的厂家、包装和封装 NU...

产品型号NUP4201DR2的Datasheet PDF文件预览

NUP4201DR2

Low Capacitance Surface

Mount TVS for High−Speed

Data Interfaces

The NUP4201DR2 transient voltage suppressor is designed to

protect equipment attached to high speed communication lines from

ESD, EFT, and lightning.

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Features:

SO−8 LOW CAPACITANCE

VOLTAGE SUPPRESSOR

500 WATTS PEAK POWER

6 VOLTS

• SO−8 Package

• Peak Power − 500 Watts 8 x 20 mS

• ESD Rating:

IEC 61000−4−2 (ESD) 15 kV (air) 8 kV (contact)

IEC 61000−4−4 (EFT) 40 A (5/50 ns)

IEC 61000−4−5 (lightning) 23 (8/20 ms)

PIN CONFIGURATION

AND SCHEMATIC

• UL Flammability Rating of 94V−0

Typical Applications:

• High Speed Communication Line Protection

• USB Power and Data Line Protection

• Video Line Protection

• Base Stations

• HDSL, IDSL Secondary IC Side Protection

• Microcontroller Input Protection

I/O 1

REF 1

I/O 2

REF 2

I/O 4

I/O 3

REF 2

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

SO−8

CASE 751

PLASTIC

Peak Power Dissipation

500

8 x 20 mS @ T = 25°C (Note 1)

Junction and Storage

Temperature Range

T , T

−55 to

+150

°C

stg

MARKING DIAGRAM

Lead Solder Temperature −

260

Maximum 10 Seconds Duration

1. Non−repetitive current pulse 8 x 20 mS exponential decay waveform

P4201

LYW

P4201 = Device Code

= Location Code

= Year

= Work Week

ORDERING INFORMATION

†

Device

Package

Shipping

NUP4201DR2

SO−8

2500/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

March, 2004 − Rev. 3

NUP4201DR2/D

NUP4201DR2

ELECTRICAL CHARACTERISTICS

Characteristic

Symbol

Min

6.0

N/A

−

Typ

−

Max

−

Unit

Reverse Breakdown Voltage @ I = 1.0 mA

Reverse Leakage Current @ V

= 5.0 Volts

−

RWM

Maximum Clamping Voltage @ I = 1.0 A, 8 x 20 mS

−

9.8

Maximum Clamping Voltage @ I = 10 A, 8 x 20 mS

−

Between I/O Pins and Ground @ DC Bias = 0 V, 1.0 MHz

Between I/O Pins and I/O @ DC Bias = 0 V, 1.0 MHz

Capacitance

5.0

2.5

−

5.0

ELECTRICAL CHARACTERISTICS

(T = 25°C unless otherwise noted)

UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)

Symbol

Parameter

Maximum Reverse Peak Pulse Current

Clamping Voltage @ I

BR RWM

RWM

Working Peak Reverse Voltage

Maximum Reverse Leakage Current @ V

RWM

Breakdown Voltage @ I

Test Current

Maximum Temperature Coefficient of V

Forward Current

Uni−Directional TVS

Forward Voltage @ I

Maximum Zener Impedance @ I

Reverse Current

Maximum Zener Impedance @ I

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NUP4201DR2

TYPICAL CHARACTERISTICS

−100

−50

100

150

200

−100

−50

100

150

200

T, TEMPERATURE (°C)

Figure 1. Reverse Breakdown versus

Temperature

Figure 2. Reverse Leakage versus

Temperature

100

PEAK VALUE I

@ 8 ms

RSM

PULSE WIDTH (t ) IS DEFINED

AS THAT POINT WHERE THE

PEAK CURRENT DECAY = 8 ms

HALF VALUE I

/2 @ 20 ms

RSM

t, TIME (ms)

I , PEAK PULSE CURRENT (A)

Figure 3. 8 × 20 ms Pulse Waveform

Figure 4. Clamping Voltage versus Peak Pulse

Current

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NUP4201DR2

APPLICATIONS INFORMATION

The new NUP4201DR2 device is a low capacitance TVS

Option 2

Diode array designed to protect sensitive electronics such as

communications systems, computers, and computer

peripherals against damage due to ESD conditions or

transient voltage conditions. Because of its low capacitance

array configuration, it can be used in high speed I/O data

lines.

Four Data lines protection with Bias and power supply

isolation resistor.

I/O 1

I/O 2

The integrated design of the NUP4201DR2 device offers

surge rated, low capacitance steering diodes and a TVS

diode integrated in a single package (SO−8). If a transient

condition occurs, the steering diodes will drive the transient

condition to the positive polarity of the power supply or to

ground. The TVS device protects the power line against

over−voltage conditions to avoid damage in any

downstream components.

10 K

I/O 3

I/O 4

The NUP4201DR2 device can be isolated from the power

supply by connecting a series resistor between pins 2 & 3 and

Vcc. A resistor of 10KW is recommended for isolation

purposes. The internal TVS and steering diodes remain

biased, which provides the advantage of lower capacitance.

NUP4201DR2 Device’s Configurations Options

The NUP4201DR2 is able to protect up to four data lines

against transient over−voltage conditions by driving them to

a fixed reference point for clamping purposes. The steering

diodes will be forward biased whenever the voltage on the

protected line exceeds the reference voltage (Vcc+Vf). The

diodes will drive the transient current away from the

sensitive circuit.

Data lines are connected at pins 1,4,6 and 7. The negative

reference is connected at pins 5 and 8. These pins must be

connected directly to ground by using a ground plane to

minimize the PCB’s ground inductance. It is very important

to reduce as much as possible the PCB trace lengths to

minimize parasitic inductances.

Option 3

Four Data lines protection using internal TVS diode as

reference.

I/O 1

I/O 2

Option 1

Four Data lines protection and power supply protection

using Vcc as reference.

I/O 3

I/O 4

I/O 1

I/O 2

In the case of applications in which a positive supply

reference is not available or full isolation is required, the

internal TVS could be used as the reference, so for this

purpose, the pins 2 and 3 are not connected. In this case, the

steering diodes will conduct whenever the voltage on the

protected line exceeds the working voltage of the TVS plus

one diode drop (Vc=Vf + VTVS).

I/O 3

I/O 4

For this configuration, connect pins 2 & 3 directly to the

positive supply rail (Vcc), the data lines are referenced to the

supply voltage. The internal TVS diode prevents

over−voltage on the supply rail.

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NUP4201DR2

“Rail to Rail” Protection Topology

The following figure shows a case when discrete diodes

are configured for rail to rail protection on an I/O line:

a good board layout to minimize the effects of the parasitic

inductances.

Nevertheless, some disadvantages are still present when

discrete diodes are used to suppress ESD conditions in “rail

to rail” configuration. If the ESD current is too high, it can

potentially result in the damage of any components

connected to that rail and it is also possible to experience

damage in the discrete diodes if their power dissipation

capability is exceeded.

ESD

Positive

VF + V

The NUP4201DR2 On Semiconductor’s device provides

a concept named “RailClamp” which is designed to

eliminate the disadvantages of the usage of discrete diodes

for ESD protection. The RailClamp concept is achieved

with the integration of the TVS device in together with the

steering diodes.

−VF

ESD

Negative

Upon the above figure, it is possible to observe that if a

positive ESD condition occurs, the D1 diode will be forward

biased while the D2 diode will be biased when a negative

ESD condition occurs. A valid first approximation of the

resulting clamping voltage due to the protection diodes can

be made as follows:

For positive pulse conditions:

Vc = Vcc + Vf

For negative pulse conditions:

Vc = −Vf

It is important to mention that effects of parasitic

inductances must be considered for fast rise time transient

conditions because the clamping voltage on the protected

circuit will be different than in the previous case. A valid

approximation of the resulting clamping voltage can be

made as show below:

Rail to Rail Protection with integrated TBS to achieve the

RailClamp concept

During an ESD condition, the ESD current will be driven

to ground through the TVS device, so the resulting clamping

voltage on the protected IC will be:

For positive pulse conditions:

Vc = Vcc + Vf + (L di^ESD/dt)

Vc = VF(RailClamp) + VTVS.

The clamping voltage of the TVS device is shown as part

of the specifications of the NUP4201DR2 datasheet. The

clamping voltage will depend on the magnitude of the ESD

current. The steering diodes are fast switching devices with

unique forward voltage and low capacitance characteristics.

For negative pulse conditions:

Vc = −Vf – (L di^ESD/dt)

As shown in the formulas, the clamping voltage (Vc) not

only depends on the Vf of the steering diodes but also in the

L di^ESD/dt factor, so this is why it is very important to have

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NUP4201DR2

TYPICAL APPLICATIONS

UPSTREAM

USB PORT

BUS

D+

D−

BUS

D+

DOWNSTREAM

USB PORT

D−

BUS

NUP4201DR2

USB

Controller

GND

BUS

NUP2201DT1

DOWNSTREAM

USB PORT

D+

D−

GND

ESD Protection for USB Port

RTIP

RRING

T1/E1

TRANCEIVER

NUP4201DR2

TTIP

TRING

TI/E1 Interface Protection

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NUP4201DR2

PACKAGE DIMENSIONS

SO−8

CASE 751−07

ISSUE AB

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

−X−

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION A AND B DO NOT INCLUDE MOLD

PROTRUSION.

4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER

SIDE.

5. DIMENSION D DOES NOT INCLUDE DAMBAR

PROTRUSION. ALLOWABLE DAMBAR

PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN

EXCESS OF THE D DIMENSION AT MAXIMUM

MATERIAL CONDITION.

0.25 (0.010)

−Y−

6. 751−01 THRU 751−06 ARE OBSOLETE. NEW

STANDAARD IS 751−07

MILLIMETERS

DIM MIN MAX

INCHES

MIN

MAX

0.197

0.157

0.069

0.020

4.80

3.80

1.35

0.33

5.00 0.189

4.00 0.150

1.75 0.053

0.51 0.013

N X 45

SEATING

PLANE

−Z−

1.27 BSC

0.050 BSC

0.10 (0.004)

0.10

0.19

0.40

0.25 0.004

0.25 0.007

1.27 0.016

0.010

0.050

0.25

5.80

0.50 0.010

6.20 0.228

0.020

0.244

0.25 (0.010)

SOLDERING FOOTPRINT*

1.52

0.060

7.0

0.275

4.0

0.155

0.6

0.024

1.270

0.050

inches

SCALE 6:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

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NUP4201DR2

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

ON Semiconductor Website: http://onsemi.com

Order Literature: http://www.onsemi.com/litorder

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

Japan: ON Semiconductor, Japan Customer Focus Center

2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051

Phone: 81−3−5773−3850

For additional information, please contact your

local Sales Representative.

NUP4201DR2/D

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NUP4201DR2产品参数

型号:	NUP4201DR2
是否无铅：	不含铅
是否Rohs认证：	不符合
生命周期：	Active
IHS 制造商：	ROCHESTER ELECTRONICS LLC
包装说明：	R-PDSO-G8
针数：	8
制造商包装代码：	CASE 751-07
Reach Compliance Code：	unknown
风险等级：	5.83
Is Samacsys：	N
其他特性：	LOW CAPACITANCE
最小击穿电压：	6 V
配置：	SINGLE
二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：	R-PDSO-G8
JESD-609代码：	e0
湿度敏感等级：	NOT SPECIFIED
最大非重复峰值反向功率耗散：	500 W
元件数量：	1
端子数量：	8
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	240
极性：	UNIDIRECTIONAL
认证状态：	COMMERCIAL
表面贴装：	YES
技术：	AVALANCHE
端子面层：	TIN LEAD
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	30
Base Number Matches：	1

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