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产品型号OPA2380AIDGKR的概述

OPA2380AIDGKR 概述 OPA2380AIDGKR是一款高性能、低功耗的运算放大器，旨在满足各种电子应用的需求。作为一种优质的运算放大器，OPA2380A具有高输入阻抗、低输入偏置电流、优良的共模抑制比和高开环增益等特点，使其在信号处理、传感器信号调理、模拟信号处理等应用场景中广泛使用。 OPA2380AIDGKR详细参数 OPA2380A的主要参数包括： - 增益带宽积: 此参数对于确定运算放大器能支持的最高频率至关重要。OPA2380A的增益带宽积为1 MHz，适合低频信号处理。 - 输入偏置电流: OPA2380A的输入偏置电流为约10 nA，意味着在高阻抗信号源应用中，影响信号的程度很小。 - 输入失调电压: 该芯片的输入失调电压小于0.2 mV，这使得它在高精度测量应用中表现出色。 - 电源电压范围: OPA2380A支持从1.8V到36V的双极电源，并且在单电源供...

产品型号OPA2380AIDGKR的Datasheet PDF文件预览

OPA380

OPA2380

SBOS291G − NOVEMBER 2003 − REVISED SEPTEMBER 2007

Precision, High-Speed

Transimpedance Amplifier

F_DEATURES

DESCRIPTION

> 1MHz TRANSIMPEDANCE BANDWIDTH

The OPA380 family of transimpedance amplifiers provides

high-speed (90MHz Gain Bandwidth [GBW]) operation, with

extremely high precision, excellent long-term stability, and

very low 1/f noise. It is ideally suited for high-speed

photodiode applications. The OPA380 features an offset

voltage of 25µV, offset drift of 0.1µV/°C, and bias current of

50pA. The OPA380 far exceeds the offset, drift, and noise

performance that conventional JFET op amps provide.

EXCELLENT LONG-TERM V

STABILITY

BIAS CURRENT: 50pA (max)

OFFSET VOLTAGE: 25µV (max)

DYNAMIC RANGE: 4 to 5 Decades

DRIFT: 0.1µV/°C (max)

GAIN BANDWIDTH: 90MHz

QUIESCENT CURRENT: 7.5mA

SUPPLY RANGE: 2.7V to 5.5V

SINGLE AND DUAL VERSIONS

MicroSize PACKAGE: MSOP-8

The signal bandwidth of a transimpedance amplifier depends

largely on the GBW of the amplifier and the parasitic

capacitance of the photodiode, as well as the feedback

resistor. The 90MHz GBW of the OPA380 enables a trans-

impedance bandwidth of > 1MHz in most configurations. The

OPA380 is ideally suited for fast control loops for power level

on an optical fiber.

A_DPPLICATIONS

PHOTODIODE MONITORING

As a result of the high precision and low-noise characteristics

of the OPA380, a dynamic range of 4 to 5 decades can be

achieved. For example, this capability allows the

measurement of signal currents on the order of 1nA, and up

to 100µA in a single I/V conversion stage. In contrast to

logarithmic amplifiers, the OPA380 provides very wide

bandwidth throughout the full dynamic range. By using an

external pull-down resistor to –5V, the output voltage range

can be extended to include 0V.

PRECISION I/V CONVERSION

OPTICAL AMPLIFIERS

CAT-SCANNER FRONT-END

R_F

+5V

The OPA380 (single) is available in MSOP-8 and SO-8

packages. The OPA2380 (dual) is available in the

miniature MSOP-8 package. They are specified from

–40°C to +125°C.

OPA380

V_OUT

(0V to 4.4V)

R_P

Photodiode

(Optional

Pulldown

Resistor)

OPA380 RELATED DEVICES

67pF

1MΩ

PRODUCT

OPA300

OPA350

OPA335

OPA132

OPA656/7

LOG112

LOG114

IVC102

FEATURES

−5V

150MHz CMOS, 2.7V to 5.5V Supply

100kΩ

500µV V , 38MHz, 2.5V to 5V Supply

10µV V , Zero-Drift, 2.5V to 5V Supply

75pF

16MHz GBW, Precision FET Op Amp, 15V

230MHz, Precision FET, 5V

LOG amp, 7.5 decades, 4.5V to 18V Supply

LOG amp, 7.5 decades, 2.25V to 5.5V Supply

Precision Switched Integrator

DDC112

Dual Current Input, 20-Bit ADC

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments

semiconductor products and disclaimers thereto appears at the end of this data sheet.

All trademarks are the property of their respective owners.

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SBOS291G − NOVEMBER 2003 − REVISED SEPTEMBER 2007

(1)

ELECTROSTATIC DISCHARGE SENSITIVITY

ABSOLUTE MAXIMUM RATINGS

Voltage Supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +7V

This integrated circuit can be damaged by ESD. Texas

Instruments recommends that all integrated circuits be

handledwith appropriate precautions. Failure to observe

(2)

Signal Input Terminals , Voltage . . . . . . . . . . −0.5V to (V+) + 0.5V

Current . . . . . . . . . . . . . . . . . . . . . 10mA

(3)

Short-Circuit Current

. . . . . . . . . . . . . . . . . . . . . . . . . Continuous

proper handling and installation procedures can cause damage.

Operating Temperature Range . . . . . . . . . . . . . . . −40°C to +125°C

Storage Temperature Range . . . . . . . . . . . . . . . . . −65°C to +150°C

Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C

Lead Temperature (soldering, 10s) . . . . . . . . . . . . . . . . . . . . . +300°C

ESD Rating (Human Body Model) . . . . . . . . . . . . . . . . . . . . . . . 2000V

ESD damage can range from subtle performance degradation to

complete device failure. Precision integrated circuits may be more

susceptible to damage because very small parametric changes could

cause the device not to meet its published specifications.

(1)

Stresses above these ratings may cause permanent damage.

Exposure to absolute maximum conditions for extended periods

may degrade device reliability. These are stress ratings only, and

functional operation of the device at these or any other conditions

beyond those specified is not implied.

(1)

PACKAGE/ORDERING INFORMATION

PACKAGE

MARKING

PRODUCT

PACKAGE-LEAD

(2)

(3)

Input terminals are diode clamped to the power-supply rails. Input

signals that can swing more than 0.5V beyond the supply rails

should be current limited to 10mA or less.

OPA380

OPA2380

MSOP-8

SO-8

AUN

OPA380A

BBX

Short-circuit to ground; one amplifier per package.

MSOP-8

(1)

For the most current package and ordering information, see the

Package Option Addendum at the end of this document, or see

the TI web site at www.ti.com.

PIN ASSIGNMENTS

Top View

OPA2380

OPA380

NC⁽¹⁾

V+

NC⁽¹⁾

V+

Out A

−

In A

Out B

Out

−

+In A

In B

+In B

+In

NC⁽¹⁾

−

MSOP-8

MSOP-8, SO-8

NOTES: (1) NC indicates no internal connection.

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SBOS291G − NOVEMBER 2003 − REVISED SEPTEMBER 2007

ELECTRICAL CHARACTERISTICS: OPA380 (SINGLE), V = 2.7V to 5.5V

Boldface limits apply over the temperature range, T = −40°C to +125°C.

All specifications at T = +25°C, R = 2kΩ connected to V /2, and V

= V /2, unless otherwise noted.

OUT

OPA380

TYP

MIN

MAX

PARAMETER

CONDITION

UNITS

OFFSET VOLTAGE

Input Offset Voltage

Drift

= +5V, V

= 0V

0.1

µV

S CM

dV /dT

PSRR

0.03

2.4

µV/°C

µV/V

vs Power Supply

Over Temperature

Long-Term Stability

= +2.7V to +5.5V, V

= 0V

= +2.7V to +5.5V, V

= 0V

(1)

See Note (1)

Channel Separation, dc

µV/V

INPUT BIAS CURRENT

Input Bias Current

= V /2

Over Temperature

Input Offset Current

Typical Characteristics

= V /2

100

NOISE

Input Voltage Noise, f = 0.1Hz to 10Hz

Input Voltage Noise Density, f = 10kHz

Input Voltage Noise Density, f > 1MHz

Input Current Noise Density, f = 10kHz

= +5V, V

= 0V

µV

5.8

nV/√Hz

fA/√Hz

INPUT VOLTAGE RANGE

Common-Mode Voltage Range

Common-Mode Rejection Ratio

V−

(V+) − 1.8V

CMRR

(V−) < V

< (V+) – 1.8V

100

110

INPUT IMPEDANCE

Differential Capacitance

Common-Mode Resistance and Inverting Input

Capacitance

1.1

10 || 3

Ω || pF

OPEN-LOOP GAIN

Open-Loop Voltage Gain

0.1V < V < (V+) − 0.7V, V = 5V, V

= V /2

110

130

0.1V < V < (V+) − 0.6V, V = 5V, V

= V /2,

110

130

= −40°C to +85°C

0V < V < (V+) − 0.7V, V = 5V, V

= 0V,

106

120

(2)

= 2kΩ to −5V

0V < V < (V+) − 0.6V, V = 5V, V

= 0V,

106

120

(2)

= 2kΩ to −5V , T = −40°C to +85°C

FREQUENCY RESPONSE

Gain-Bandwidth Product

Slew Rate

C = 50pF

GBW

MHz

V/µs

µs

G = +1

V = +5V, 4V Step, G = +1

(3)

Settling Time, 0.01%

(4)(5)

Overload Recovery Time

× G = > V

100

OUTPUT

Voltage Output Swing from Positive Rail

Voltage Output Swing from Negative Rail

Voltage Output Swing from Positive Rail

Voltage Output Swing from Negative Rail

Output Current

= 2kΩ

400

600

100

600

(2)

= 2kΩ to −5V

400

−20

See Typical Characteristics

OUT

Short-Circuit Current

150

Capacitive Load Drive

See Typical Characteristics

LOAD

Open-Loop Output Impedance

f = 1MHz, I = 0A

Ω

POWER SUPPLY

Specified Voltage Range

Quiescent Current

Over Temperature

2.7

5.5

= 0A

7.5

9.5

TEMPERATURE RANGE

Specified and Operating Range

Storage Range

−40

−65

+125

+150

°C

Thermal Resistance

MSOP-8, SO-8

150

°C/W

(1)

(2)

300-hour life test at 150°C demonstrated randomly distributed variation approximately equal to measurement repeatability of 1µV.

Tested with output connected only to R , a pulldown resistor connected between V

and −5V, as shown in Figure 5. See also applications section, Achieving

OUT

Output Swing to Ground.

(3)

(4)

(5)

Transimpedance frequency of 1MHz.

Time required to return to linear operation.

From positive rail.

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SBOS291G − NOVEMBER 2003 − REVISED SEPTEMBER 2007

ELECTRICAL CHARACTERISTICS: OPA2380 (DUAL), V = 2.7V to 5.5V

Boldface limits apply over the temperature range, T = −40°C to +125°C.

All specifications at T = +25°C, R = 2kΩ connected to V /2, and V

= V /2, unless otherwise noted.

OUT

OPA2380

TYP

MIN

MAX

PARAMETER

CONDITION

UNITS

OFFSET VOLTAGE

Input Offset Voltage

Drift

= +5V, V

= 0V

0.1

µV

S CM

dV /dT

PSRR

0.03

2.4

µV/°C

µV/V

vs Power Supply

Over Temperature

Long-Term Stability

= +2.7V to +5.5V, V

= 0V

= +2.7V to +5.5V, V

= 0V

(1)

See Note (1)

Channel Separation, dc

µV/V

INPUT BIAS CURRENT

Input Bias Current, Inverting Input

= V /2

Noninverting Input

Over Temperature

NOISE

= V /2

200

Typical Characteristics

Input Voltage Noise, f = 0.1Hz to 10Hz

Input Voltage Noise Density, f = 10kHz

Input Voltage Noise Density, f > 1MHz

Input Current Noise Density, f = 10kHz

= +5V, V

= 0V

µV

5.8

nV/√Hz

fA/√Hz

INPUT VOLTAGE RANGE

Common-Mode Voltage Range

Common-Mode Rejection Ratio

V−

(V+) − 1.8V

CMRR

(V−) < V

< (V+) – 1.8V

105

INPUT IMPEDANCE

Differential Capacitance

Common-Mode Resistance and Inverting Input

Capacitance

1.1

10 || 3

Ω || pF

OPEN-LOOP GAIN

Open-Loop Voltage Gain

0.12V < V < (V+) − 0.7V, V = 5V, V

= V /2

110

130

0.12V < V < (V+) − 0.6V, V = 5V, V

= V /2,

110

130

= −40°C to +85°C

0V < V < (V+) − 0.7V, V = 5V, V

= 0V,

106

120

(2)

= 2kΩ to −5V

0V < V < (V+) − 0.6V, V = 5V, V

= 0V,

106

120

(2)

= 2kΩ to −5V , T = −40°C to +85°C

FREQUENCY RESPONSE

Gain-Bandwidth Product

Slew Rate

C = 50pF

GBW

MHz

V/µs

µs

G = +1

V = +5V, 4V Step, G = +1

(3)

Settling Time, 0.01%

(4)(5)

Overload Recovery Time

× G = > V

100

OUTPUT

Voltage Output Swing from Positive Rail

Voltage Output Swing from Negative Rail

Voltage Output Swing from Positive Rail

Voltage Output Swing from Negative Rail

Output Current

= 2kΩ

400

600

120

600

(2)

= 2kΩ to −5V

400

−20

See Typical Characteristics

OUT

Short-Circuit Current

150

Capacitive Load Drive

See Typical Characteristics

LOAD

Open-Loop Output Impedance

f = 1MHz, I = 0A

Ω

POWER SUPPLY

Specified Voltage Range

Quiescent Current (per amplifier)

Over Temperature

2.7

5.5

= 0A

7.5

9.5

TEMPERATURE RANGE

Specified and Operating Range

Storage Range

−40

−65

+125

+150

°C

Thermal Resistance

MSOP-8

150

°C/W

(1)

(2)

300-hour life test at 150°C demonstrated randomly distributed variation approximately equal to measurement repeatability of 1µV.

Tested with output connected only to R , a pulldown resistor connected between V

and −5V, as shown in Figure 5. See also applications section, Achieving

OUT

Output Swing to Ground.

(3)

(4)

(5)

Transimpedance frequency of 1MHz.

Time required to return to linear operation.

From positive rail.

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SBOS291G − NOVEMBER 2003 − REVISED SEPTEMBER 2007

TYPICAL CHARACTERISTICS: V = +2.7V to +5.5V

All specifications at T = +25°C, R = 2kΩ connected to V /2, and V

= V /2, unless otherwise noted.

OUT

POWER−SUPPLY REJECTION RATIO AND

COMMON−MODE REJECTION vs FREQUENCY

OPEN−LOOP GAIN AND PHASE vs FREQUENCY

Gain

160

140

120

100

140

120

100

−

Phase

PSRR

CMRR

135

180

225

270

−

0.1

100

10k 100k 1M 10M 100M

100

10k

100k

10M 100M

Frequency (Hz)

INPUT VOLTAGE NOISE SPECTRAL DENSITY

QUIESCENT CURRENT vs TEMPERATURE

V_S= +5.5V

1000

100

V_S= +2.7V

−

100

10k

100k

10M

40 25

100

125

Frequency (Hz)

Temperature ( C)

QUIESCENT CURRENT vs SUPPLY VOLTAGE

INPUT BIAS CURRENT vs TEMPERATURE

1000

100

−

40 25

100

125

2.7 3.0

3.5

4.0

4.5

5.0

5.5

Temperature ( C)

Supply Voltage (V)

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SBOS291G − NOVEMBER 2003 − REVISED SEPTEMBER 2007

TYPICAL CHARACTERISTICS: V = +2.7V to +5.5V (continued)

All specifications at T = +25°C, R = 2kΩ connected to V /2, and V

= V /2, unless otherwise noted.

OUT

INPUT BIAS CURRENT

OUTPUT VOLTAGE SWING vs OUTPUT CURRENT

vs INPUT COMMON−MODE VOLTAGE

(V+)

−

(V+)

−

I_B

−

+25 C 40 C

+125 C

−

(V ) +2

−

I_B

−

(V ) +1

−

(V )

100

150

0.5

1.0

1.5

2.0

2.5

3.0

3.5

Output Current (mA)

Input Common−Mode Voltage (V)

SHORT−CIRCUIT CURRENT vs TEMPERATURE

V_S= 5V

OFFSET VOLTAGE PRODUCTION DISTRIBUTION

200

150

100

+I_SC

−

I_SC

−

100

150

−

40 25

100

125

−

Offset Voltage ( V)

Temperature ( C)

OFFSET VOLTAGE DRIFT

PRODUCTION DISTRIBUTION

GAIN BANDWIDTH vs POWER SUPPLY VOLTAGE

2.5

3.5

4.5

5.5

−

0.10 0.08 0.06 0.04 0.02

0.02 0.04 0.06 0.08 0.1

Power Supply Voltage (V)

Offset Voltage Drift ( V/ C)

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SBOS291G − NOVEMBER 2003 − REVISED SEPTEMBER 2007

TYPICAL CHARACTERISTICS: V = +2.7V to +5.5V (continued)

All specifications at T = +25°C, R = 2kΩ connected to V /2, and V

= V /2, unless otherwise noted.

OUT

TRANSIMPEDANCE AMP CHARACTERISTIC

C_DIODE= 100pF

140

130

120

110

100

Circuit for Transimpedance Amplifier Characteristic curves on this page.

Ω

R_F= 10M

C_F

Ω

R_F= 1M

C_F= 0.5pF

C_F= 2pF

C_F= 5pF

C_F= 18pF

R_F

Ω

R_F= 100k

C_STRAY

Ω

R_F= 10k

Ω

R_F= 1k

OPA380

C_STRAY(parasitic) = 0.2pF

C_DIODE

100

10k

100k

Frequency (Hz)

10M

100M

TRANSIMPEDANCE AMP CHARACTERISTIC

C_DIODE= 20pF

140

130

120

110

100

C_DIODE= 50pF

Ω

R_F= 10M

130

120

110

100

Ω

R_F= 1M

C_F= 0.5pF

C_F= 1.5pF

C_F= 4pF

C_F= 12pF

Ω

R_F= 1M

Ω

R_F= 100k

C_F= 1pF

C_F= 2.5pF

Ω

R_F= 10k

Ω

R_F= 10k

Ω

R_F= 1k

Ω

R_F= 1k

C_F= 7pF

C_STRAY(parasitic) = 0.2pF

1k 10k

C_STRAY(parasitic) = 0.2pF

1k 10k

100

100k

10M

100M

100k

10M

Frequency (Hz)

TRANSIMPEDANCE AMP CHARACTERISTIC

C_DIODE= 1pF

TRANSIMPEDANCE AMP CHARACTERISTIC

C_DIODE= 10pF

140

130

120

110

100

140

130

120

110

100

Ω

R_F= 10M

Ω

R_F= 10M

Ω

R_F= 1M

Ω

R_F= 1M

R_F= 100k

C_F= 0.5pF

C_F= 2pF

R_F= 100k

C_F= 0.5pF

C_F= 1pF

Ω

R_F= 10k

Ω

R_F= 10k

Ω

R_F= 1k

Ω

R_F= 1k

C_F= 5pF

C_F= 2.5pF

1M 10M

C_STRAY(parasitic) = 0.2pF

1k 10k

C_STRAY(parasitic) = 0.2pF

1k 10k

100

100k

10M

100M

Frequency (Hz)

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SBOS291G − NOVEMBER 2003 − REVISED SEPTEMBER 2007

TYPICAL CHARACTERISTICS: V = +2.7V to +5.5V (continued)

All specifications at T = +25°C, R = 2kΩ connected to V /2, and V

= V /2, unless otherwise noted.

OUT

SMALL−SIGNAL OVERSHOOT vs LOAD CAPACITANCE

2.5pF

Ω

10k

Ω

10k

+5V

+2.5V

R_S

V_OUT

R_S

OPA380

V_{O UT}

OPA380

Ω

R_P= 2k

R_F= 2kΩ

−

2.5V

No R_S

Ω

R_S= 100

Ω

R_S= 100

100

1000

100

Load Capacitance (pF)

1000

Load Capacitance (pF)

SMALL−SIGNAL STEP RESPONSE

OVERLOAD RECOVERY

3.2pF

Ω

R_L= 2k

Ω

50k

V_OUT

−

= 5V

V_P

+5V

OUT

1.6mA

Ω

V_P= 0V

I_IN

Time (100ns/div)

LARGE−SIGNAL STEP RESPONSE

CHANNEL SEPARATION vs INPUT FREQUENCY

140

120

100

Ω

R_L= 2k

2.5pF

Ω

10k

2.5V

Ω

−

2.5V

Time (100ns/div)

100

10k

100k

10M

100M

Frequency (Hz)

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OPERATING VOLTAGE

APPLICATIONS INFORMATION

BASIC OPERATION

The OPA380 series op amps are fully specified from

2.7V to 5.5V over a temperature range of −40°C to

+125°C. Parameters that vary significantly with operat-

ing voltages or temperature are shown in the Typical

Characteristics.

The OPA380 is a high-performance transimpedance

amplifier with very low 1/f noise. As a result of its unique

architecture, the OPA380 has excellent long-term input

voltage offset stability—a 300-hour life test at 150°C

demonstrated

randomly

distributed

variation

INTERNAL OFFSET CORRECTION

approximately equal to measurement repeatability of

1µV.

The OPA380 series op amps use an auto-zero topology

with a time-continuous 90MHz op amp in the signal

path. This amplifier is zero-corrected every 100µs using

a proprietary technique. Upon power-up, the amplifier

The OPA380 performance results from an internal

auto-zero amplifier combined with a high-speed

amplifier. The OPA380 has been designed with circuitry

to improve overload recovery and settling time over a

traditional composite approach. It has been specifically

designed and characterized to accommodate circuit

options to allow 0V output operation (see Figure 3).

requires approximately 400µs to achieve specified V

accuracy, which includes one full auto-zero cycle of

approximately 100µs and the start-up time for the bias

circuitry. Prior to this time, the amplifier will function

properly but with unspecified offset voltage.

The OPA380 is used in inverting configurations, with the

noninverting input used as a fixed biasing point.

Figure 1 shows the OPA380 in a typical configuration.

Power-supply pins should be bypassed with 1µF ceramic

or tantalum capacitors. Electrolytic capacitors are not

recommended.

This design has virtually no aliasing and very low noise.

Zero correction occurs at a 10kHz rate, but there is very

little fundamental noise energy present at that

frequency due to internal filtering. For all practical

purposes, any glitches have energy at 20MHz or higher

and are easily filtered, if required. Most applications are

not sensitive to such high-frequency noise, and no

filtering is required.

C_F

R_F

INPUT VOLTAGE

The input common-mode voltage range of the OPA380

series extends from V− to (V+) – 1.8V. With input

signals above this common-mode range, the amplifier

will no longer provide a valid output value, but it will not

latch or invert.

+5V

1 F

(1)

V_OUT

(0.5V to 4.4V)

OPA380

INPUT OVERVOLTAGE PROTECTION

_BIAS= 0.5V

Device inputs are protected by ESD diodes that will

conduct if the input voltages exceed the power supplies

by more than approximately 500mV. Momentary

voltages greater than 500mV beyond the power supply

can be tolerated if the current is limited to 10mA. The

OPA380 series feature no phase inversion when the

inputs extend beyond supplies if the input is current

limited.

NOTE: (1) V_OUT= 0.5V in dark conditions.

Figure 1. OPA380 Typical Configuration

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OUTPUT RANGE

ACHIEVING OUTPUT SWING TO GROUND

The OPA380 is specified to swing within at least 600mV

of the positive rail and 100mV of the negative rail with

a 2kΩ load with excellent linearity. Swing to the negative

rail while maintaining good linearity can be extended to

0V—see the section, Achieving Output Swing to

Ground. See the Typical Characteristic curve, Output

Voltage Swing vs Output Current.

Some applications require output voltage swing from

0V to a positive full-scale voltage (such as +4.096V)

with excellent accuracy. With most single-supply op

amps, problems arise when the output signal

approaches 0V, near the lower output swing limit of a

single-supply op amp. A good single-supply op amp

may swing close to single-supply ground, but will not

reach 0V.

The OPA380 can swing slightly closer than specified to

the positive rail; however, linearity will decrease and a

high-speed overload recovery clamp limits the amount

of positive output voltage swing available, as shown in

Figure 2.

The output of the OPA380 can be made to swing to

ground, or slightly below, on a single-supply power

source. This extended output swing requires the use of

another resistor and an additional negative power

supply. A pull-down resistor may be connected between

the output and the negative supply to pull the output

down to 0V. See Figure 3.

OFFSET VOLTAGE vs OUTPUT VOLTAGE

V_S= 5V

Ω

−

R_P= 2k connected to 5V

R_F

V+ = +5V

−

Ω

R_L= 2k connected to V_S/2

OPA380

V_OUT

−

Effect of clamp

Ω

R_P= 2k

−

= Gnd

V_OUT(V)

−

V_P= 5V

Negative Supply

Figure 2. Effect of High-Speed Overload

Recovery Clamp on Output Voltage

Figure 3. Amplifier with Optional Pull-Down

Resistor to Achieve V = 0V

OUT

OVERLOAD RECOVERY

The OPA380 has been designed to prevent output

saturation. After being overdriven to the positive rail, it

will typically require only 100ns to return to linear

operation. The time required for negative overload

recovery is greater, unless a pull-down resistor

connected to a more negative supply is used to extend

the output swing all the way to the negative rail—see the

following section, Achieving Output Swing to Ground.

The OPA380 has an output stage that allows the output

voltage to be pulled to its negative supply rail using this

technique. However, this technique only works with

some types of output stages. The OPA380 has been

designed to perform well with this method. Accuracy is

excellent down to 0V. Reliable operation is assured over

the specified temperature range.

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SBOS291G − NOVEMBER 2003 − REVISED SEPTEMBER 2007

the desired transimpedance gain (R );

BIASING PHOTODIODES IN SINGLE-SUPPLY

CIRCUITS

the Gain Bandwidth Product (GBW) for the

OPA380 (90MHz).

The +IN input can be biased with a positive DC voltage

to offset the output voltage and allow the amplifier

output to indicate a true zero photodiode measurement

when the photodiode is not exposed to any light. It will

also prevent the added delay that results from coming

out of the negative rail. This bias voltage appears

across the photodiode, providing a reverse bias for

faster operation. An RC filter placed at this bias point will

reduce noise, as shown in Figure 4. This bias voltage

can also serve as an offset bias point for an ADC with

range that does not include ground.

With these three variables set, the feedback capacitor

value (C ) can be set to control the frequency response.

is the stray capacitance of R , which is 0.2pF for

STRAY

a typical surface-mount resistor.

To achieve a maximally flat, 2nd-order, Butterworth

frequency response, the feedback pole should be set

to:

GBW

4pR_FC_TOT

_STRAYǓ

2pR_FC_F) C

Bandwidth is calculated by:

GBW

(1)

C_F

< 1pF

f_*3dB

2pR_FC_TOT

(2)

R_F

These

equations

will

result

maximum

Ω

10M

transimpedance bandwidth. For even higher

transimpedance bandwidth, the high-speed CMOS

OPA300 (SBOS271 (180MHz GBW)), or the OPA656

(SBOS196 (230MHz GBW)) may be used.

V+

OPA380

V_OUT

For additional information, refer to Application Bulletin

AB−050 (SBOA055), Compensate Transimpedance

Amplifiers Intuitively, available for download at

www.ti.com.

0.1 F

Ω

100k

+V_Bias

(1)

C_F

NOTE: (1) C_Fis optional to prevent gain peaking.

It includes the stray capacitance of R_F.

R_F

10MΩ

Figure 4. Filtered Reverse Bias Voltage

TRANSIMPEDANCE AMPLIFIER

(2)

C_STRAY

+5V

Wide bandwidth, low input bias current, and low input

voltage and current noise make the OPA380 an ideal

wideband photodiode transimpedance amplifier.

Low-voltage noise is important because photodiode

capacitance causes the effective noise gain of the

circuit to increase at high frequency.

(3)

C_TOT

OPA380

V_OUT

R_P(optional

pulldown resistor)

−

NOTE: (1) C_Fis optional to prevent gain peaking.

(2) C_STRAYis the stray capacitance of R_F

The key elements to a transimpedance design are

shown in Figure 5:

(typically, 0.2pF for a surface−mount resistor).

(3) C_TOTis the photodiode capacitance plus OPA380

input capacitance.

the total input capacitance (C

), consisting of the

) plus the parasitic

TOT

photodiode capacitance (C

DIODE

common-mode and differential-mode input

capacitance (3pF + 1.1pF for the OPA380);

Figure 5. Transimpedance Amplifier

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SBOS291G − NOVEMBER 2003 − REVISED SEPTEMBER 2007

TRANSIMPEDANCE BANDWIDTH AND

NOISE

Ω

R_F= 10k

(a)

Limiting the gain set by R can decrease the noise

C_STRAY=0.2pF

occurring at the output of the transimpedance circuit.

However, all required gain should occur in the

transimpedance stage, since adding gain after the

transimpedance amplifier generally produces poorer

noise performance. The noise spectral density

OPA380

V_OUT

produced by R increases with the square-root of R ,

whereas the signal increases linearly. Therefore,

signal-to-noise ratio is improved when all the required

gain is placed in the transimpedance stage.

V_BIAS

Total noise increases with increased bandwidth. Limit

the circuit bandwidth to only that required. Use a

Ω

R_F= 10k

(b)

capacitor, C , across the feedback resistor, R , to limit

C_STRAY= 0.2pF

C_F= 16pF

bandwidth, even if not required for stability if total output

noise is a concern.

Figure 6a shows the transimpedance circuit without any

feedback capacitor. The resulting transimpedance gain

of this circuit is shown in Figure 7. The –3dB point is

approximately 10MHz. Adding a 16pF feedback

capacitor (Figure 6b) will limit the bandwidth and result

in a –3dB point at approximately 1MHz (see Figure 7).

Output noise will be further reduced by adding a filter

OPA380

V_OUT

V_BIAS

and C

) to create a second pole (Figure

FILTER

6c). This second pole is placed within the feedback loop

to maintain the amplifier’s low output impedance. (If the

pole was placed outside the feedback loop, an

additional buffer would be required and would

inadvertently increase noise and dc error).

Ω

R_F= 10k

(c)

C_STRAY= 0.2pF

C_F= 21pF

Using R

to represent the equivalent diode

DIODE

resistance, and C

for equivalent diode capacitance

TOT

plus OPA380 input capacitance, the noise zero, f , is

R_FILTER

calculated by:

Ω

= 100

OPA380

R_DIODE) R_F

V_OUT

f_Z

C_FILTER

= 796pF

2pR_DIODER_FC_TOT) C_F

(3)

V_BIAS

Figure 6. Transimpedance Circuit Configurations

with Varying Total and Integrated Noise Gain

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SBOS291G − NOVEMBER 2003 − REVISED SEPTEMBER 2007

110

500

400

300

200

100

C_DIODE= 10pF

419µV

See Figure 6a

−

3dB BW at 1MHz

See Figure 6c

See Figure 6b

See Figure 6c

86µV

30µV

See Figure 6b

10M 100M

−

100

10k 100k 1M 10M 100M

100

10k

100k

Frequency (Hz)

Figure 7. Transimpedance Gains for Circuits in

Figure 6

Figure 9. Integrated Output Noise for Circuits in

Figure 6

Figure 10 shows the effect of diode capacitance on

integrated output noise, using the circuit in Figure 6c.

The effect of these circuit configurations on output noise

is shown in Figure 8 and on integrated output noise in

Figure 9. A 2-pole Butterworth filter (maximally flat in

passband) is created by selecting the filter values using

the equation:

For additional information, refer to Noise Analysis of

FET Transimpedance Amplifiers (SBOA060), and

Noise Analysis for High-Speed Op Amps (SBOA066),

available for download from the TI web site.

C_FR_F+ 2C_FILTERR_FILTER

(4)

with:

79µV

f_*3dB

C_DIODE

= 100pF

2p R_FR_FILTERC_FC_FILTER

(5)

C_DIODE

= 50pF

50µV

35µV

The circuit in Figure 6b rolls off at 20dB/decade. The

circuit with the additional filter shown in Figure 6c rolls

off at 40dB/decade, resulting in improved noise

performance.

C_DIODE

= 20pF

30µV

27 V

C_DIODE

= 1pF

C_DIODE

= 10pF

See Figure 6c

10 100

300

C_DIODE= 10pF

10k 100k 1M 10M 100M

Frequency (Hz)

200

Figure 10. Integrated Output Noise for Various

Values of C for Circuit in Figure 6c

See Figure 6a

DIODE

100

See Figure 6b

See Figure 6c

100

10k 100k

10M 100M

Frequency (Hz)

Figure 8. Output Noise for Circuits in Figure 6

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SBOS291G − NOVEMBER 2003 − REVISED SEPTEMBER 2007

BOARD LAYOUT

CAPACITIVE LOAD AND STABILITY

Minimize photodiode capacitance and stray

capacitance at the summing junction (inverting input).

This capacitance causes the voltage noise of the op

amp to be amplified (increasing amplification at high

frequency). Using a low-noise voltage source to

reverse-bias a photodiode can significantly reduce its

capacitance. Smaller photodiodes have lower

capacitance. Use optics to concentrate light on a small

photodiode.

The OPA380 series op amps can drive up to 500pF pure

capacitive load. Increasing the gain enhances the

amplifier’s ability to drive greater capacitive loads (see

the Typical Characteristic curve, Small-Signal

Overshoot vs Capacitive Load).

One method of improving capacitive load drive in the

unity-gain configuration is to insert a 10Ω to 20Ω

resistor in series with the load. This reduces ringing with

large capacitive loads while maintaining DC accuracy.

Circuit board leakage can degrade the performance of

an otherwise well-designed amplifier. Clean the circuit

board carefully. A circuit board guard trace that

encircles the summing junction and is driven at the

same voltage can help control leakage, as shown in

Figure 11.

DRIVING FAST 16-BIT ANALOG-TO-DIGITAL

CONVERTERS (ADC)

The OPA380 series is optimized for driving a fast 16-bit

ADC such as the ADS8411. The OPA380 op amp

buffers the converter’s input capacitance and resulting

charge injection while providing signal gain. Figure 12

shows the OPA380 in a single-ended method of

interfacing the ADS8411 16-bit, 2MSPS ADC. For

additional information, refer to the ADS8411 data sheet.

R_F

OPA380

V_OUT

C_F

R_F

Guard Ring

Ω

OPA380

ADS8411

Figure 11. Connection of Input Guard

6800pF

OTHER WAYS TO MEASURE SMALL

CURRENTS

RC Values shown are optimized for the

Logarithmic amplifiers are used to compress extremely

wide dynamic range input currents to a much narrower

range. Wide input dynamic ranges of 8 decades, or

100pA to 10mA, can be accommodated for input to a

12-bit ADC. (Suggested products: LOG101, LOG102,

LOG104, and LOG112.)



ADS8411 values may vary for other ADCs.

Figure 12. Driving 16-Bit ADCs

C_F

R_F

Extremely small currents can be accurately measured

by integrating currents on a capacitor. (Suggested

product: IVC102.)

R₁

Low-level currents can be converted to high-resolution

data words. (Suggested product: DDC112.)

V_IN

OPA380

V_OUT

For further information on the range of products

available, search www.ti.com using the above specific

model names or by using keywords transimpedance

and logarithmic.

(Provides high−speed amplification

with very low offset and drift.)

Figure 13. OPA380 Inverting Gain Configuration

PACKAGE OPTION ADDENDUM

www.ti.com

16-Aug-2012

PACKAGING INFORMATION

Status ⁽¹⁾

Eco Plan ⁽²⁾

MSL Peak Temp ⁽³⁾

Samples

Orderable Device

Package Type Package

Drawing

Pins

Package Qty

Lead/

Ball Finish

(Requires Login)

OPA2380AIDGKR

OPA2380AIDGKRG4

OPA2380AIDGKT

OPA2380AIDGKTG4

OPA380AID

ACTIVE

VSSOP

SOIC

DGK

2500

250

Green (RoHS

& no Sb/Br)

CU NIPDAUAGLevel-2-260C-1 YEAR

Green (RoHS

& no Sb/Br)

CU NIPDAUAGLevel-2-260C-1 YEAR

CU NIPDAU Level-2-260C-1 YEAR

CU NIPDAUAGLevel-2-260C-1 YEAR

CU NIPDAU Level-2-260C-1 YEAR

Green (RoHS

& no Sb/Br)

250

Green (RoHS

& no Sb/Br)

Green (RoHS

& no Sb/Br)

OPA380AIDG4

SOIC

Green (RoHS

& no Sb/Br)

OPA380AIDGKR

OPA380AIDGKRG4

OPA380AIDGKT

OPA380AIDGKTG4

OPA380AIDR

VSSOP

SOIC

DGK

2500

250

Green (RoHS

& no Sb/Br)

Green (RoHS

& no Sb/Br)

Green (RoHS

& no Sb/Br)

250

Green (RoHS

& no Sb/Br)

2500

Green (RoHS

& no Sb/Br)

OPA380AIDRG4

SOIC

Green (RoHS

& no Sb/Br)

⁽¹⁾The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.

LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.

NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.

PREVIEW: Device has been announced but is not in production. Samples may or may not be available.

OBSOLETE: TI has discontinued the production of the device.

⁽²⁾Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability

information and additional product content details.

TBD: The Pb-Free/Green conversion plan has not been defined.

Addendum-Page 1

PACKAGE OPTION ADDENDUM

www.ti.com

16-Aug-2012

Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that

lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.

Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between

the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.

Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight

in homogeneous material)

⁽³⁾MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information

provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and

continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.

TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

Addendum-Page 2

PACKAGE MATERIALS INFORMATION

www.ti.com

16-Aug-2012

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device

Package Package Pins

Type Drawing

SPQ

Reel

Pin1

Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant

(mm) W1 (mm)

OPA2380AIDGKR

OPA2380AIDGKT

OPA380AIDGKR

OPA380AIDGKT

OPA380AIDR

VSSOP

SOIC

DGK

2500

250

330.0

180.0

330.0

180.0

330.0

12.4

5.3

6.4

3.4

5.2

1.4

2.1

8.0

12.0

2500

250

2500

Pack Materials-Page 1

PACKAGE MATERIALS INFORMATION

www.ti.com

16-Aug-2012

*All dimensions are nominal

Device

Package Type Package Drawing Pins

SPQ

Length (mm) Width (mm) Height (mm)

OPA2380AIDGKR

OPA2380AIDGKT

OPA380AIDGKR

OPA380AIDGKT

OPA380AIDR

VSSOP

SOIC

DGK

2500

250

367.0

210.0

367.0

210.0

367.0

185.0

367.0

185.0

367.0

35.0

2500

250

2500

Pack Materials-Page 2

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OPA2380AIDGKR产品参数

型号:	OPA2380AIDGKR
Brand Name：	Texas Instruments
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
IHS 制造商：	TEXAS INSTRUMENTS INC
零件包装代码：	MSOP
包装说明：	GREEN, PLASTIC, VSSOP-8
针数：	8
Reach Compliance Code：	compliant
HTS代码：	8542.39.00.01
Factory Lead Time：	1 week
风险等级：	0.65
Samacsys Confidence：	3
Samacsys Status：	Released
Samacsys PartID：	373914
Samacsys Pin Count：	8
Samacsys Part Category：	Integrated Circuit
Samacsys Package Category：	Small Outline Packages
Samacsys Footprint Name：	OPA2380AIDGKR
Samacsys Released Date：	2019-02-13 05:32:10
Is Samacsys：	N
JESD-30 代码：	R-PDSO-G8
JESD-609代码：	e4
长度：	3 mm
湿度敏感等级：	2
功能数量：	2
端子数量：	8
最高工作温度：	125 °C
最低工作温度：	-40 °C
封装主体材料：	PLASTIC/EPOXY
封装代码：	TSSOP
封装等效代码：	TSSOP8,.19
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
峰值回流温度（摄氏度）：	260
电源：	3/5 V
认证状态：	Not Qualified
座面最大高度：	1.07 mm
子类别：	Other Telecom ICs
最大压摆率：	0.016 mA
标称供电电压：	5 V
表面贴装：	YES
电信集成电路类型：	TELECOM CIRCUIT
温度等级：	AUTOMOTIVE
端子面层：	Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：	GULL WING
端子节距：	0.65 mm
端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	3 mm
Base Number Matches：	1

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