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  • OPA847IDBVR图
  • 集好芯城

     该会员已使用本站13年以上
  • OPA847IDBVR 现货库存
  • 数量17791 
  • 厂家TI(德州仪器) 
  • 封装 
  • 批号22+ 
  • 原装原厂现货
  • QQ:3008092965QQ:3008092965 复制
    QQ:3008092965QQ:3008092965 复制
  • 0755-83239307 QQ:3008092965QQ:3008092965
  • OPA847IDR图
  • 深圳市拓亿芯电子有限公司

     该会员已使用本站12年以上
  • OPA847IDR 现货库存
  • 数量22000 
  • 厂家TI/德州仪器 
  • 封装SO8 
  • 批号23+ 
  • 只做原装现货假一罚十
  • QQ:2103443489QQ:2103443489 复制
    QQ:2924695115QQ:2924695115 复制
  • 0755-82702619 QQ:2103443489QQ:2924695115
  • OPA847ID图
  • HECC GROUP CO.,LIMITED

     该会员已使用本站17年以上
  • OPA847ID 现货库存
  • 数量2600 
  • 厂家TI 
  • 封装SOIC8 
  • 批号24+ 
  • 1582
  • QQ:3007947169QQ:3007947169 复制
    QQ:3007947210QQ:3007947210 复制
  • 755-83950895 QQ:3007947169QQ:3007947210
  • OPA847ID图
  • HECC GROUP CO.,LIMITED

     该会员已使用本站17年以上
  • OPA847ID 现货库存
  • 数量12500 
  • 厂家TI 
  • 封装8-SOIC 
  • 批号24+ 
  • 假一罚百,TI专营!深圳有库存,北美、新加坡可发货
  • QQ:800888908QQ:800888908 复制
  • 755-83950019 QQ:800888908
  • OPA847ID图
  • HECC GROUP CO.,LIMITED

     该会员已使用本站17年以上
  • OPA847ID 现货库存
  • 数量2600 
  • 厂家TI 
  • 封装SOIC8 
  • 批号24+ 
  • 假一罚万!进口全新原装
  • QQ:3003818780QQ:3003818780 复制
    QQ:3003819484QQ:3003819484 复制
  • 0755-83950895 QQ:3003818780QQ:3003819484
  • OPA847IDR图
  • 深圳市宏捷佳电子科技有限公司

     该会员已使用本站12年以上
  • OPA847IDR 现货库存
  • 数量60030 
  • 厂家TI/德州仪器 
  • 封装SOP-8 
  • 批号2023+ 
  • 专营原装正品量大可定货
  • QQ:2885134554QQ:2885134554 复制
    QQ:2885134398QQ:2885134398 复制
  • 0755-22669259 QQ:2885134554QQ:2885134398
  • OPA847IDBVR图
  • 深圳市宗天技术开发有限公司

     该会员已使用本站10年以上
  • OPA847IDBVR 现货库存
  • 数量8000 
  • 厂家TI(德州仪器) 
  • 封装实单可说明 
  • 批号22+ 
  • 宗天技术 原装现货/假一赔十
  • QQ:444961496QQ:444961496 复制
    QQ:2824256784QQ:2824256784 复制
  • 0755-88601327 QQ:444961496QQ:2824256784
  • OPA847IDBVR(OATI)图
  • 深圳市芯脉实业有限公司

     该会员已使用本站11年以上
  • OPA847IDBVR(OATI) 现货库存
  • 数量26800 
  • 厂家Texas Instruments 
  • 封装SOT23-6 
  • 批号22+ 
  • 新到现货、一手货源、当天发货、bom配单
  • QQ:1435424310QQ:1435424310 复制
  • 0755-84507451 QQ:1435424310
  • OPA847IDBVTG4图
  • 深圳市富莱微科技有限公司

     该会员已使用本站6年以上
  • OPA847IDBVTG4 现货库存
  • 数量
  • 厂家TI 
  • 封装SOT-23-6 
  • 批号23+ 
  • 全新原装,公司现货
  • QQ:1968343307QQ:1968343307 复制
    QQ:2885835292QQ:2885835292 复制
  • 0755-83210149 QQ:1968343307QQ:2885835292
  • OPA847IDR图
  • 深圳市能元时代电子有限公司

     该会员已使用本站10年以上
  • OPA847IDR 现货库存
  • 数量92000 
  • 厂家TI/德州仪器 
  • 封装SOIC8 
  • 批号24+ 
  • 原装现货假一罚十!可含税长期供货
  • QQ:2885637848QQ:2885637848 复制
    QQ:2885658492QQ:2885658492 复制
  • 0755-84502810 QQ:2885637848QQ:2885658492
  • OPA847IDBVT图
  • 深圳市隆鑫创展电子有限公司

     该会员已使用本站15年以上
  • OPA847IDBVT 现货库存
  • 数量1000 
  • 厂家TI 
  • 封装SOP 
  • 批号18+ 
  • 一手代理货源&价格可谈可含税%配单侠
  • QQ:2355878626QQ:2355878626 复制
    QQ:2850299242QQ:2850299242 复制
  • 0755-82812278 QQ:2355878626QQ:2850299242
  • OPA847IDBVT图
  • 深圳市欧立现代科技有限公司

     该会员已使用本站12年以上
  • OPA847IDBVT 现货库存
  • 数量9851 
  • 厂家TI 
  • 封装SOT23-6 
  • 批号24+ 
  • 全新原装现货,可开增值税发票,欢迎询购!
  • QQ:1950791264QQ:1950791264 复制
    QQ:221698708QQ:221698708 复制
  • 0755-83222787 QQ:1950791264QQ:221698708
  • OPA847ID图
  • 深圳市芯脉实业有限公司

     该会员已使用本站11年以上
  • OPA847ID 现货库存
  • 数量75 
  • 厂家TI 
  • 封装SOIC (D) 
  • 批号新批次 
  • 新到现货、一手货源、当天发货、bom配单
  • QQ:2881512844QQ:2881512844 复制
  • 075584507705 QQ:2881512844
  • OPA847IDBVT【优势库存】图
  • 齐创科技(上海北京青岛)有限公司

     该会员已使用本站14年以上
  • OPA847IDBVT【优势库存】 现货库存
  • 数量6800 
  • 厂家TI代理 
  • 封装6SOT23 
  • 批号24+热销 
  • 中国区代理全新热卖原装正品
  • QQ:2394092314QQ:2394092314 复制
    QQ:792179102QQ:792179102 复制
  • 021-62153656 QQ:2394092314QQ:792179102
  • OPA847IDBVR图
  • 深圳市华来深电子有限公司

     该会员已使用本站13年以上
  • OPA847IDBVR 现货库存
  • 数量3000 
  • 厂家TI 
  • 封装SOT23-6 
  • 批号17+ 
  • 受权代理!全新原装现货特价热卖!
  • QQ:1258645397QQ:1258645397 复制
    QQ:876098337QQ:876098337 复制
  • 0755-83238902 QQ:1258645397QQ:876098337
  • OPA847ID图
  • 深圳市科雨电子有限公司

     该会员已使用本站9年以上
  • OPA847ID 热卖库存
  • 数量8590 
  • 厂家guanwen 
  • 封装SMD 
  • 批号24+ 
  • 公司有现货的
  • QQ:97671956QQ:97671956 复制
  • 171-4729-1886(微信同号) QQ:97671956
  • OPA847IDBVR图
  • 深圳市拓森弘电子有限公司

     该会员已使用本站1年以上
  • OPA847IDBVR
  • 数量5300 
  • 厂家TI(德州仪器) 
  • 封装SOT-23-6 
  • 批号21+ 
  • 全新原装正品,库存现货实报
  • QQ:1300774727QQ:1300774727 复制
  • 13714410484 QQ:1300774727
  • OPA847ID图
  • 深圳市芯福林电子有限公司

     该会员已使用本站15年以上
  • OPA847ID
  • 数量13880 
  • 厂家TI/德州仪器 
  • 封装SOIC-8 
  • 批号21+ 
  • 公司只售原装 支持实单
  • QQ:2881495751QQ:2881495751 复制
  • 0755-88917743 QQ:2881495751
  • OPA847ID图
  • 深圳市芯福林电子有限公司

     该会员已使用本站15年以上
  • OPA847ID
  • 数量85000 
  • 厂家TI/德州仪器 
  • 封装SOP8 
  • 批号23+ 
  • 真实库存全新原装正品!代理此型号
  • QQ:2881495753QQ:2881495753 复制
  • 0755-23605827 QQ:2881495753
  • OPA847ID图
  • 深圳市龙腾新业科技有限公司

     该会员已使用本站17年以上
  • OPA847ID
  • 数量18238 
  • 厂家TI/德州仪器 
  • 封装SOP8 
  • 批号24+ 
  • 原装原厂 现货现卖
  • QQ:562765057QQ:562765057 复制
    QQ:370820820QQ:370820820 复制
  • 0755-84509636 QQ:562765057QQ:370820820
  • OPA847IDR图
  • 深圳市晶美隆科技有限公司

     该会员已使用本站15年以上
  • OPA847IDR
  • 数量85000 
  • 厂家TI/德州仪器 
  • 封装SOP-8 
  • 批号24+ 
  • 假一罚十,原装进口正品现货供应,价格优势。
  • QQ:198857245QQ:198857245 复制
  • 0755-82865294 QQ:198857245
  • OPA847ID图
  • 深圳市高捷芯城科技有限公司

     该会员已使用本站11年以上
  • OPA847ID
  • 数量7845 
  • 厂家TI(德州仪器) 
  • 封装SOP-8 
  • 批号23+ 
  • 支持大陆交货,美金交易。原装现货库存。
  • QQ:3007977934QQ:3007977934 复制
    QQ:3007947087QQ:3007947087 复制
  • 0755-83062789 QQ:3007977934QQ:3007947087
  • OPA847ID图
  • 深圳市得捷芯城科技有限公司

     该会员已使用本站11年以上
  • OPA847ID
  • 数量25 
  • 厂家TI/德州仪器 
  • 封装NA/ 
  • 批号23+ 
  • 优势代理渠道,原装正品,可全系列订货开增值税票
  • QQ:3007977934QQ:3007977934 复制
    QQ:3007947087QQ:3007947087 复制
  • 0755-82546830 QQ:3007977934QQ:3007947087
  • OPA8471DBVT图
  • 集好芯城

     该会员已使用本站13年以上
  • OPA8471DBVT
  • 数量12233 
  • 厂家TI/德州仪器 
  • 封装SOT23-6 
  • 批号最新批次 
  • 原厂原装公司现货
  • QQ:3008092965QQ:3008092965 复制
    QQ:3008092965QQ:3008092965 复制
  • 0755-83239307 QQ:3008092965QQ:3008092965
  • OPA847IDBVT图
  • 深圳市拓亿芯电子有限公司

     该会员已使用本站12年以上
  • OPA847IDBVT
  • 数量30000 
  • 厂家TI/德州仪器 
  • 封装SOT23-6 
  • 批号23+ 
  • 只做原装现货假一罚十
  • QQ:2103443489QQ:2103443489 复制
    QQ:2924695115QQ:2924695115 复制
  • 0755-82702619 QQ:2103443489QQ:2924695115
  • OPA847IDBVR图
  • 深圳市集创讯科技有限公司

     该会员已使用本站5年以上
  • OPA847IDBVR
  • 数量9500 
  • 厂家TI/德州仪器 
  • 封装SOT-23-6 
  • 批号24+ 
  • 原装进口正品现货,假一罚十价格优势
  • QQ:2885393494QQ:2885393494 复制
    QQ:2885393495QQ:2885393495 复制
  • 0755-83244680 QQ:2885393494QQ:2885393495
  • OPA847IDBV图
  • 北京首天国际有限公司

     该会员已使用本站16年以上
  • OPA847IDBV
  • 数量15000 
  • 厂家TI 
  • 封装SOT23-6 
  • 批号2024+ 
  • 百分百原装正品,现货库存
  • QQ:528164397QQ:528164397 复制
    QQ:1318502189QQ:1318502189 复制
  • 010-62565447 QQ:528164397QQ:1318502189
  • OPA847ID PBF图
  • 北京中其伟业科技有限公司

     该会员已使用本站16年以上
  • OPA847ID PBF
  • 数量300 
  • 厂家TI/BB 
  • 封装 
  • 批号16+ 
  • 特价,原装正品,绝对公司现货库存,原装特价!
  • QQ:2880824479QQ:2880824479 复制
  • 010-62104891 QQ:2880824479
  • OPA847IDBVRG4图
  • 北京元坤伟业科技有限公司

     该会员已使用本站17年以上
  • OPA847IDBVRG4
  • 数量5000 
  • 厂家TI 
  • 封装SOT-23-6 
  • 批号2024+ 
  • 百分百原装正品,现货库存
  • QQ:857273081QQ:857273081 复制
    QQ:1594462451QQ:1594462451 复制
  • 010-62104931 QQ:857273081QQ:1594462451
  • OPA847ID图
  • 北京元坤伟业科技有限公司

     该会员已使用本站17年以上
  • OPA847ID
  • 数量5000 
  • 厂家Fairchild Semiconductor 
  • 封装贴/插片 
  • 批号2024+ 
  • 百分百原装正品,现货库存
  • QQ:857273081QQ:857273081 复制
    QQ:1594462451QQ:1594462451 复制
  • 010-62104891 QQ:857273081QQ:1594462451
  • OPA847IDR图
  • 深圳市正信鑫科技有限公司

     该会员已使用本站12年以上
  • OPA847IDR
  • 数量6500 
  • 厂家TI 
  • 封装原厂封装 
  • 批号22+ 
  • 原装正品★真实库存★价格优势★欢迎来电洽谈
  • QQ:1686616797QQ:1686616797 复制
    QQ:2440138151QQ:2440138151 复制
  • 0755-22655674 QQ:1686616797QQ:2440138151
  • OPA847IDBVRG4图
  • 深圳市惊羽科技有限公司

     该会员已使用本站11年以上
  • OPA847IDBVRG4
  • 数量18800 
  • 厂家TI-德州仪器 
  • 封装SOT-23-6 
  • 批号▉▉:2年内 
  • ▉▉¥10一一有问必回一一有长期订货一备货HK仓库
  • QQ:43871025QQ:43871025 复制
  • 131-4700-5145---Q-微-恭-候---有-问-秒-回 QQ:43871025
  • OPA847ID图
  • 深圳市华芯盛世科技有限公司

     该会员已使用本站13年以上
  • OPA847ID
  • 数量865000 
  • 厂家TI/德州仪器 
  • 封装8-soic 
  • 批号最新批号 
  • 一级代理,原装特价现货!
  • QQ:2881475757QQ:2881475757 复制
  • 0755-83225692 QQ:2881475757
  • OPA847ID图
  • 深圳市毅创腾电子科技有限公司

     该会员已使用本站16年以上
  • OPA847ID
  • 数量3000 
  • 厂家TI 
  • 封装SOP8 
  • 批号22+ 
  • ★只做原装★正品现货★原盒原标★
  • QQ:2355507165QQ:2355507165 复制
    QQ:2355507162QQ:2355507162 复制
  • 86-0755-83210909 QQ:2355507165QQ:2355507162
  • OPA847ID图
  • 深圳市芯鹏泰科技有限公司

     该会员已使用本站8年以上
  • OPA847ID
  • 数量7536 
  • 厂家TEXAS 
  • 封装SOIC-8 
  • 批号23+ 
  • 高速放大器绝对进口原装现货
  • QQ:3004306594QQ:3004306594 复制
  • 0755-82777852 QQ:3004306594
  • OPA847IDR图
  • 深圳市美思瑞电子科技有限公司

     该会员已使用本站12年以上
  • OPA847IDR
  • 数量7216 
  • 厂家TI/德州仪器 
  • 封装SOIC8 
  • 批号22+ 
  • 现货,原厂原装假一罚十!
  • QQ:2885659458QQ:2885659458 复制
    QQ:2885657384QQ:2885657384 复制
  • 0755-83952260 QQ:2885659458QQ:2885657384
  • OPA847ID图
  • 深圳市恒意法科技有限公司

     该会员已使用本站17年以上
  • OPA847ID
  • 数量6697 
  • 厂家Texas Instruments 
  • 封装8-SOIC(0.154,3.90mm 宽) 
  • 批号21+ 
  • 正规渠道/品质保证/原装正品现货
  • QQ:2881514372QQ:2881514372 复制
  • 0755-83247729 QQ:2881514372
  • OPA847IDBV图
  • 深圳市华斯顿电子科技有限公司

     该会员已使用本站16年以上
  • OPA847IDBV
  • 数量41643 
  • 厂家TI/BB 
  • 封装SOT23-6 
  • 批号2023+ 
  • 绝对原装正品全新进口深圳现货
  • QQ:1002316308QQ:1002316308 复制
    QQ:515102657QQ:515102657 复制
  • 深圳分公司0755-83777708“进口原装正品专供” QQ:1002316308QQ:515102657
  • OPA847ID图
  • 深圳市惊羽科技有限公司

     该会员已使用本站11年以上
  • OPA847ID
  • 数量6328 
  • 厂家TI-德州仪器 
  • 封装SOP-8.贴片 
  • 批号▉▉:2年内 
  • ▉▉¥47.6元一有问必回一有长期订货一备货HK仓库
  • QQ:43871025QQ:43871025 复制
  • 131-4700-5145---Q-微-恭-候---有-问-秒-回 QQ:43871025
  • OPA847ID图
  • 深圳市一呈科技有限公司

     该会员已使用本站9年以上
  • OPA847ID
  • 数量265 
  • 厂家Texas Instruments 
  • 封装表面贴装型 
  • 批号23+ 
  • ▉原装正品▉力挺实单全系列可订
  • QQ:3003797048QQ:3003797048 复制
    QQ:3003797050QQ:3003797050 复制
  • 0755-82779553 QQ:3003797048QQ:3003797050

产品型号OPA847的Datasheet PDF文件预览

OPA847  
OPA847  
SBOS251C – JULY 2002 – REVISED OCTOBER 2003  
Wideband, Ultra-Low Noise, Voltage-Feedback  
OPERATIONAL AMPLIFIER with Shutdown  
DESCRIPTION  
FEATURES  
The OPA847 combines very high gain bandwidth and large  
signal performance with an ultra-low input noise voltage  
(0.85nV/Hz) while using only 18mA supply current. Where  
power savings is critical, the OPA847 also includes an  
optional power shutdown pin that, when pulled low, disables  
the amplifier and decreases the supply current to < 1% of the  
powered-up value. This optional feature may be left discon-  
nected to ensure normal amplifier operation when no power-  
down is required.  
z HIGH GAIN BANDWIDTH: 3.9GHz  
z LOW INPUT VOLTAGE NOISE: 0.85nV/  
Hz  
z VERY LOW DISTORTION: –105dBc (5MHz)  
z HIGH SLEW RATE: 950V/µs  
z HIGH DC ACCURACY: VIO < ±100µV  
z LOW SUPPLY CURRENT: 18.1mA  
z LOW SHUTDOWN POWER: 2mW  
z STABLE FOR GAINS 12  
The combination of very low input voltage and current noise,  
along with a 3.9GHz gain bandwidth product, make the  
OPA847 an ideal amplifier for wideband transimpedance  
applications. As a voltage gain stage, the OPA847 is opti-  
mized for a flat frequency response at a gain of +20V/V and  
is stable down to gains as low as +12V/V. New external  
compensation techniques allow the OPA847 to be used at  
any inverting gain with excellent frequency response control.  
Using this technique in a differential Analog-to-Digital Con-  
verter (ADC) interface application, shown below, can deliver  
one of the highest dynamic-range interfaces available.  
APPLICATIONS  
z HIGH DYNAMIC RANGE ADC PREAMPS  
z LOW NOISE, WIDEBAND, TRANSIMPEDANCE  
AMPLIFIERS  
z WIDEBAND, HIGH GAIN AMPLIFIERS  
z LOW NOISE DIFFERENTIAL RECEIVERS  
z ULTRASOUND CHANNEL AMPLIFIERS  
z IMPROVED UPGRADE FOR THE OPA687,  
CLC425, AND LMH6624  
OPA847 RELATED PRODUCTS  
INPUT NOISE  
VOLTAGE (nV/Hz)  
GAIN BANDWIDTH  
PRODUCT (MHz)  
SINGLES  
OPA842  
OPA843  
OPA846  
2.6  
2.0  
1.2  
200  
800  
1750  
+5V  
+5V  
0.001µF  
20Ω  
OPA847  
100Ω  
DIFFERENTIAL OPA847 DRIVER DISTORTION  
2VPP, at converter input.  
–70  
1.7pF  
VIN  
+
–5V  
2kΩ  
50Source  
100pF  
VCM  
–75  
–80  
39pF  
39pF  
850Ω  
1:2  
ADS5421  
14-Bit  
40MSPS  
< 5.1dB  
Noise  
Figure  
850Ω  
0.1µF  
–85  
2kΩ  
+5V  
OPA847  
–5V  
–90  
VIN–  
100Ω  
1.7pF  
2nd-Harmonic  
100pF  
0.001µF  
20Ω  
–95  
3rd-Harmonic  
–100  
–105  
–110  
24.6dB Gain  
Ultra-High Dynamic Range  
Differential ADC Driver  
10  
20  
30  
40  
50  
Frequency (MHz)  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
Copyright © 2002-2003, Texas Instruments Incorporated  
www.ti.com  
ABSOLUTE MAXIMUM RATINGS(1)  
ELECTROSTATIC  
DISCHARGESENSITIVITY  
Electrostatic discharge can cause damage ranging from  
performance degradation to complete device failure. Texas  
Instrumentsrecommendsthatallintegratedcircuitsbehandled  
and stored using appropriate ESD protection methods.  
Power Supply ............................................................................... ±6.5VDC  
Internal Power Dissipation ........................ See Thermal Analysis Section  
Differential Input Voltage .................................................................. ±1.2V  
Input Voltage Range ............................................................................ ±VS  
Storage Temperature Range: D, DBV .......................... –40°C to +125°C  
Lead Temperature (soldering, 10s) .............................................. +300°C  
Junction Temperature (TJ ) ............................................................ +150°C  
ESD Rating (Human Body Model) .................................................. 1500V  
(Charge Device Model) ............................................... 1500V  
ESD damage can range from subtle performance degrada-  
tion to complete device failure. Precision integrated circuits  
may be more susceptible to damage because very small  
parametric changes could cause the device not to meet  
published specifications.  
(Machine Model) ........................................................... 100V  
NOTE: (1) Stresses above these ratings may cause permanent damage.  
Exposure to absolute maximum conditions for extended periods may degrade  
device reliability. These are stress ratings only, and functional operation of the  
device at these or any other conditions beyond those specified is not implied.  
PACKAGE/ORDERING INFORMATION  
SPECIFIED  
PACKAGE  
DESIGNATOR(1)  
TEMPERATURE  
RANGE  
PACKAGE  
MARKING  
ORDERING  
NUMBER  
TRANSPORT  
MEDIA, QUANTITY  
PRODUCT  
PACKAGE-LEAD  
OPA847  
SO-8  
D
"
DBV  
"
–40°C to +85°C  
OPA847  
OPA847ID  
OPA847IDR  
OPA847IDBVT  
OPA847IDBVR  
Rails, 100  
"
OPA847  
"
"
"
"
OATI  
"
Tape and Reel, 2500  
Tape and Reel, 250  
Tape and Reel, 3000  
SOT23-6  
–40°C to +85°C  
"
"
NOTE: (1) For the most current specifications and package information, refer to our web site at www.ti.com.  
PIN CONFIGURATIONS  
Top View  
SO Top View  
SOT  
Output  
–VS  
1
6
+VS  
DIS  
2
3
5
4
Noninverting Input  
Inverting Input  
NC  
1
2
3
4
8
7
6
5
DIS  
Inverting Input  
+VS  
Noninverting Input  
–VS  
Output  
NC  
NC = No Connection  
OATI  
Pin Orientation/Package Marking  
OPA847  
2
SBOS251C  
www.ti.com  
ELECTRICAL CHARACTERISTICS: VS = ±5V  
Boldface limits are tested at +25°C.  
RL = 100, RF = 750Ω, RG = 39.2, and G = +20 (see Figure 1 for AC performance only), unless otherwise noted.  
OPA847ID, IDBV  
MIN/MAX OVER TEMPERATURE  
TYP  
0°C to  
70°C(2)  
–40°C to  
+85°C(2)  
MIN/  
TEST  
PARAMETER  
CONDITIONS  
+25°C  
+25°C(1)  
UNITS  
MAX LEVEL(3)  
AC PERFORMANCE (see Figure 1)  
Closed-Loop Bandwidth  
G = +12, RG = 39.2, VO = 200mVPP  
G = +20, RG = 39.2, VO = 200mVPP  
G = +50, RG = 39.2, VO = 200mVPP  
G +50  
600  
350  
78  
3900  
60  
MHz  
MHz  
MHz  
MHz  
MHz  
dB  
typ  
min  
min  
min  
min  
max  
C
B
B
B
B
B
230  
63  
3100  
40  
210  
60  
3000  
35  
195  
57  
2800  
30  
Gain Bandwidth Product (GBP)  
Bandwidth for 0.1dB Gain Flatness  
Peaking at a Gain of +12  
Harmonic Distortion  
G = +20, RL = 100Ω  
4.5  
7
10  
12  
G = +20, f = 5MHz, VO = 2VPP  
2nd-Harmonic  
RL = 100Ω  
–74  
–105  
–103  
–110  
39  
–70  
–90  
–96  
–105  
37  
–69  
–89  
–91  
–100  
36  
–68  
–88  
–88  
–90  
35  
dBc  
dBc  
dBc  
dBc  
dBm  
max  
max  
max  
max  
min  
B
B
B
B
B
B
B
R
R
R
L = 500Ω  
L = 100Ω  
L = 500Ω  
3rd-Harmonic  
2-Tone, 3rd-Order Intercept  
Input Voltage Noise Density  
Input Current Noise Density  
Pulse Response  
Rise-and-Fall Time  
Slew Rate  
G = +20, f = 20MHz  
f > 1MHz  
Hz  
Hz  
0.85  
2.5  
0.92  
3.5  
0.98  
3.6  
1.0  
3.7  
nV/  
pA/  
max  
max  
f > 1MHz  
0.2V Step  
2V Step  
2V Step  
2V Step  
2V Step  
1.2  
950  
20  
10  
6
1.75  
700  
2.0  
625  
2.2  
535  
ns  
V/µs  
ns  
ns  
ns  
max  
min  
typ  
max  
max  
B
B
C
B
B
Settling Time to 0.01%  
0.1%  
12  
8
14  
10  
18  
12  
1%  
DC PERFORMANCE(4)  
Open-Loop Voltage Gain (AOL  
Input Offset Voltage  
Average Offset Voltage Drift  
Input Bias Current  
Input Bias Current Drift (magnitude)  
Input Offset Current  
)
VO = 0V  
VCM = 0V  
VCM = 0V  
VCM = 0V  
VCM = 0V  
VCM = 0V  
VCM = 0V  
98  
±0.1  
±0.25  
–19  
–15  
±0.1  
±0.1  
90  
±0.5  
±0.25  
–39  
–15  
±0.6  
±0.1  
89  
±0.58  
±1.5  
–41  
–40  
±0.7  
±2  
88  
dB  
mV  
µV/°C  
µA  
nA/°C  
µA  
nA/°C  
min  
max  
max  
max  
max  
max  
max  
A
A
B
A
B
A
B
±0.60  
±1.5  
–42  
–70  
±0.85  
±3.5  
Input Offset Current Drift  
INPUT  
Common-Mode Input Range (CMIR)(5)  
Common-Mode Rejection Ratio (CMRR)  
Input Impedance  
±3.3  
110  
±3.1  
95  
±3.0  
93  
±2.9  
90  
V
dB  
min  
min  
A
A
VCM = ±0.5V, Input Referred  
Differential  
Common-Mode  
VCM = 0V  
VCM = 0V  
2.7 || 2.0  
2.3 || 1.7  
k|| pF  
M|| pF  
typ  
typ  
C
C
OUTPUT  
Output Voltage Swing  
400Load  
100Load  
VO = 0V  
±3.5  
±3.4  
100  
–75  
0.003  
±3.3  
±3.2  
60  
±3.1  
±3.0  
56  
±3.0  
±2.9  
52  
V
V
mA  
mA  
min  
min  
min  
min  
typ  
A
A
A
A
C
Current Output, Sourcing  
Current Output, Sinking  
Closed-Loop Output Impedance  
VO = 0V  
G = +20, f = < 100kHz  
–60  
–56  
–52  
POWER SUPPLY  
Specified Operating Voltage  
Maximum Operating Voltage  
Maximum Quiescent Current  
Minimum Quiescent Current  
Power-Supply Rejection Ratio  
+PSRR, –PSRR  
±5  
±6  
18.1  
18.1  
V
V
mA  
mA  
typ  
max  
max  
min  
C
A
A
A
±6  
18.4  
17.8  
±6  
18.7  
17.5  
±6  
18.9  
17.1  
VS = ±5V  
VS = ±5V  
|VS| = 4.5V to 5.5V, Input Referred  
(Pin 8 on SO-8; Pin 5 on SOT23-6)  
100  
95  
93  
90  
dB  
min  
A
POWER-DOWN (disabled low)  
Power-Down Quiescent Current (+VS)  
On Voltage (enabled high or floated)  
Off Voltage (disabled asserted low)  
Power-Down Pin Input Bias Current  
Power-Down Time  
–200  
3.5  
1.8  
150  
200  
60  
–270  
3.75  
1.7  
–320  
3.85  
1.6  
–370  
3.95  
1.5  
µA  
V
V
µA  
ns  
ns  
dB  
max  
min  
max  
max  
typ  
A
A
A
A
C
C
C
(VDIS = 0)  
190  
200  
210  
Power-Up Time  
Off Isolation  
typ  
typ  
5MHz, Input to Output  
70  
THERMAL  
Specification ID, IDBV  
Thermal Resistance, θJA  
–40 to +85  
°C  
typ  
C
Junction-to-Ambient  
D
SO-8  
125  
150  
°C/W  
°C/W  
typ  
typ  
C
C
DBV SOT23  
NOTES:(1)Junctiontemperature=ambientfor+25°Cspecifications. (2)Junctiontemperature=ambientatlowtemperaturelimit:junctiontemperature=ambient+23°C  
at high temperature limit for over temperature specifications. (3) Test Levels: (A) 100% tested at 25°C. Over temperature limits by characterization and simulation.  
(B) Limits set by characterization and simulation. (C) Typical value only for information. (4) Current is considered positive out of node. VCM is the input common-mode  
voltage. (5) Tested < 3dB below minimum specified CMRR at ±CMIR limits.  
OPA847  
SBOS251C  
3
www.ti.com  
TYPICAL CHARACTERISTICS: VS = ±5V  
TA = 25°C, G = +20V/V, RG = 39.2, and RL = 100, unless otherwise noted.  
NONINVERTING SMALL-SIGNAL  
FREQUENCY RESPONSE  
INVERTING SMALL-SIGNAL  
FREQUENCY RESPONSE  
6
3
6
3
VO = 0.2VPP  
RG = 39.2Ω  
RL = 100Ω  
RF Adjusted  
VO = 0.2VPP  
RL = 100Ω  
RG = RS = 50Ω  
RF Adjusted  
G = +12  
G = –30  
G = –20  
0
0
–3  
–6  
–9  
–12  
–15  
–3  
–6  
–9  
–12  
–15  
G = +20  
G = +30  
G = +50  
G = –40  
G = –50  
See Figure 1  
See Figure 2  
1
10  
100  
Frequency (MHz)  
1000  
1
10  
100  
Frequency (MHz)  
1000  
INVERTING LARGE-SIGNAL  
FREQUENCY RESPONSE  
NONINVERTING LARGE-SIGNAL  
FREQUENCY RESPONSE  
35  
32  
29  
26  
23  
20  
17  
14  
29  
26  
23  
20  
17  
14  
11  
8
RG = 39.2Ω  
RL = 100Ω  
G = +20V/V  
See Figure 2  
VO = 200mVPP  
VO = 0.2VPP  
VO = 1VPP  
VO = 2VPP  
VO = 5VPP  
VO = 1VPP  
VO = 2VPP  
VO = 5VPP  
RL = 100Ω  
RG = RS = 50Ω  
G = –40V/V  
See Figure 1  
10  
10  
100  
Frequency (MHz)  
1000  
100  
1000  
Frequency (MHz)  
NONINVERTING PULSE RESPONSE  
INVERTING PULSE RESPONSE  
0.25  
0.20  
0.15  
0.10  
0.05  
0
1.25  
0.25  
0.20  
0.15  
0.10  
0.05  
0
1.25  
Large Signal ± 1V  
Large Signal ± 1V  
G = +20V/V  
1.00  
0.75  
0.50  
0.25  
0
1.00  
0.75  
0.50  
0.25  
0
Right Scale  
Right Scale  
Small Signal ± 100mV  
Small Signal ± 100mV  
Left Scale  
Left Scale  
–0.05  
–0.10  
–0.15  
–0.20  
–0.25  
–0.25  
–0.50  
–0.75  
–1.00  
–1.25  
–0.05  
–0.10  
–0.15  
–0.20  
–0.25  
–0.25  
–0.50  
–0.75  
–1.00  
–1.25  
G = –40V/V  
See Figure 2  
RG = RS = 50Ω  
L = 100Ω  
See Figure 1  
R
Time (5ns/div)  
Time (5ns/div)  
OPA847  
4
SBOS251C  
www.ti.com  
TYPICAL CHARACTERISTICS: VS = ±5V (Cont.)  
TA = 25°C, G = +20V/V, RG = 39.2, and RL = 100, unless otherwise noted.  
5MHz HARMONIC DISTORTION vs LOAD RESISTANCE  
G = +20V/V  
1MHz HARMONIC DISTORTION vs LOAD RESISTANCE  
G = +20V/V  
–70  
–75  
–75  
–80  
V
O = 2VPP  
VO = 5VPP  
–80  
2nd-Harmonic  
–85  
–85  
–90  
–90  
2nd-Harmonic  
–95  
–100  
–105  
–110  
–115  
–95  
3rd-Harmonic  
3rd-Harmonic  
–100  
–105  
See Figure 1  
400 450 500  
See Figure 1  
100 150 200  
100  
150  
200  
250  
300  
350  
250  
300  
350  
400  
450  
500  
Load Resistance ()  
Load Resistance ()  
HARMONIC DISTORTION vs OUTPUT VOLTAGE  
G = +20V/V  
F = 5MHz  
RL = 200Ω  
HARMONIC DISTORTION vs FREQUENCY  
G = +20V/V  
VO = 2VPP  
RL = 200Ω  
–65  
–75  
–75  
–80  
–85  
2nd-Harmonic  
2nd-Harmonic  
–90  
–85  
–95  
–95  
–100  
–105  
–110  
–115  
3rd-Harmonic  
3rd-Harmonic  
–105  
–115  
See Figure 1  
See Figure 1  
0.1  
1
10  
0.1  
1
10  
Frequency (MHz)  
100  
Output Voltage Swing (VPP  
)
HARMONIC DISTORTION vs NONINVERTING GAIN  
2nd-Harmonic  
HARMONIC DISTORTION vs INVERTING GAIN  
–75  
–80  
–70  
–75  
–80  
–85  
2nd-Harmonic  
VO = 2VPP  
RL = 200Ω  
F = 5MHz  
–85  
VO = 2VPP  
RL = 200Ω  
F = 5MHz  
–90  
–90  
RF = 750Ω  
–95  
–95  
RG = 50Ω  
RG Adjusted  
RF Adjusted  
–100  
–105  
–110  
–100  
–105  
–110  
3rd-Harmonic  
3rd-Harmonic  
40  
See Figure 2  
45 50  
See Figure 1  
50 55 50  
15  
20  
25  
30  
35  
40  
45  
20  
25  
30  
35  
Gain –V/V  
Gain (V/V)  
OPA847  
SBOS251C  
5
www.ti.com  
TYPICAL CHARACTERISTICS: VS = ±5V (Cont.)  
TA = 25°C, G = +20V/V, RG = 39.2, and RL = 100, unless otherwise noted.  
INPUT VOLTAGE AND CURRENT NOISE  
2-TONE, 3RD-ORDER INTERMODULATION INTERCEPT  
50  
45  
40  
35  
30  
25  
20  
10  
G = +20V/V  
20dB to matched load.  
2.7pA/Hz  
Current Noise  
1
50  
0.85nV/Hz  
Voltage Noise  
PO  
PI  
OPA847  
50Ω  
50Ω  
750Ω  
39.2Ω  
0
101  
102  
103  
104  
105  
106  
107  
5
1
1
10  
15  
20  
25  
30  
35  
40  
45  
50  
Frequency (Hz)  
Frequency (MHz)  
NONINVERTING GAIN FLATNESS TUNE  
LOW GAIN INVERTING BANDWIDTH  
G = –8  
1
0
0.5  
0.4  
V
O = 200mVPP  
NG = 12  
NG = 14  
NG = 16  
AV = +12V/V  
NG = Noise Gain  
–1  
–2  
–3  
–4  
–5  
–6  
–7  
–8  
–9  
0.3  
VO = 0.2VPP  
RF = 750  
0.2  
0.1  
0
G = –1  
G = –2  
–0.1  
–0.2  
–0.3  
–0.4  
–0.5  
NG = 18  
NG = 20  
G = –4  
External Compensation  
See Figure 8  
External Compensation  
See Figure 6  
1
10  
100  
1000  
10  
100  
Frequency (MHz)  
1000  
Frequency (MHz)  
RECOMMENDED RS vs CAPACITIVE LOAD  
FREQUENCY RESPONSE vs CAPACITIVE LOAD  
100  
10  
1
29  
26  
23  
20  
17  
14  
G = +20V/V  
RS adjusted for capacitive load.  
C = 10pF  
C = 22pF  
C = 47pF  
C = 100pF  
RS  
VO  
VI  
OPA847  
50  
CL  
1kΩ  
750Ω  
(1kis optional.)  
39.2Ω  
1
10  
100  
1000  
10  
100  
Frequency (MHz)  
1000  
Capacitive Load (pF)  
OPA847  
6
SBOS251C  
www.ti.com  
TYPICAL CHARACTERISTICS: VS = ±5V (Cont.)  
TA = 25°C, G = +20V/V, RG = 39.2, and RL = 100, unless otherwise noted.  
COMMON-MODE REJECTION RATIO AND  
OPEN-LOOP GAIN AND PHASE  
POWER-SUPPLY REJECTION RATIO vs FREQUENCY  
120  
110  
100  
90  
120  
100  
80  
0
CMRR  
+PSRR  
–30  
–60  
–90  
–120  
–150  
–180  
–210  
20log (AOL  
)
AOL  
80  
60  
–PSRR  
70  
40  
60  
50  
20  
40  
0
30  
–20  
20  
102  
103  
104  
105  
Frequency (Hz)  
106  
107  
108  
102  
103  
104  
105  
106  
107  
108  
109  
Frequency (Hz)  
CLOSED-LOOP OUTPUT IMPEDANCE vs FREQUENCY  
G = +20V/V  
OUTPUT VOLTAGE AND CURRENT LIMITATIONS  
4
3
10  
1
VDIS  
ZO  
RL = 100  
OPA847  
2
1
750  
RL = 50Ω  
RL = 25Ω  
0
0.1  
39.2Ω  
–1  
–2  
–3  
–4  
0.01  
0.001  
–150  
–100  
–50  
0
50  
100  
150  
103  
104  
105  
106  
107  
108  
I
O (mA)  
Frequency (Hz)  
INVERTING OVERDRIVE RECOVERY  
NONINVERTING OVERDRIVE RECOVERY  
10  
8
0.25  
0.20  
0.15  
0.10  
0.05  
0
10  
0.5  
G = –40V/V  
G = 50  
L = 100Ω  
Input  
Right Scale  
G = +20V/V  
L = 100  
8
6
0.4  
R
R
R
6
0.3  
Input  
4
4
0.2  
Right Scale  
Output  
Left Scale  
2
2
0.1  
0
0
0
–2  
–4  
–6  
–8  
–10  
–0.05  
–0.10  
–0.15  
–0.20  
–0.25  
–2  
–4  
–6  
–8  
–10  
–0.1  
–0.2  
–0.3  
–0.4  
–0.5  
Output  
Left Scale  
See Figure 2  
See Figure 1  
Time (40ns/div)  
Time (40ns/div)  
OPA847  
SBOS251C  
7
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TYPICAL CHARACTERISTICS: VS = ±5V (Cont.)  
TA = 25°C, G = +20V/V, RG = 39.2, and RL = 100, unless otherwise noted.  
PHOTODIODE TRANSIMPEDANCE  
FREQUENCY RESPONSE  
SETTLING TIME  
0.25  
0.20  
0.15  
0.10  
0.05  
0
89  
86  
83  
80  
77  
74  
71  
RF = 20kΩ  
CF Adjusted  
G = +20V/V  
L = 100Ω  
O = 2V Step  
CD = 10pF  
[20log 20k]  
R
V
CD = 20pF  
CD = 50pF  
CD = 100pF  
VO  
0.01µF  
OPA847  
20kΩ  
–0.05  
–0.10  
–0.15  
–0.20  
–0.25  
20kΩ  
IO  
CF  
CDIODE  
[CD]  
See Figure 1  
30 35  
0
5
10  
15  
20  
25  
40  
1
10  
Frequency (MHz)  
100  
Time (ns)  
TYPICAL DC DRIFT OVER TEMPERATURE  
SUPPLY AND OUTPUT CURRENT vs TEMPERATURE  
100  
90  
80  
70  
60  
50  
20  
18  
16  
14  
12  
10  
0.2  
0.1  
25.0  
12.5  
0
Supply Current  
100 x IOS  
Sourcing Output Current  
VIO  
0
Sinking Output Current  
–0.1  
–0.2  
–12.5  
–25.0  
Ib  
–50  
–25  
0
25  
50  
75  
100  
125  
–50  
–25  
0
25  
50  
75  
100  
125  
Ambient Temperature (°C)  
Ambient Temperature (°C)  
COMMON-MODE INPUT RANGE AND OUTPUT SWING  
vs SUPPLY VOLTAGE  
COMMON-MODE AND DIFFERENTIAL  
INPUT IMPEDANCE  
107  
106  
105  
104  
103  
102  
5
4
RL = 100  
Common-Mode  
(2.3M, DC)  
3
Positive Output  
2
1
Positive Input  
Negative Input  
0
Differential  
(2.7k, DC)  
–1  
–2  
–3  
–4  
–5  
Negative Output  
102  
103  
104  
105  
106  
107  
108  
Frequency (Hz)  
Supply Voltage (±V)  
OPA847  
8
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TYPICAL CHARACTERISTICS: VS = ±5V  
TA = 25°C, GD = 40V/V, RG = 50, and RL = 400, unless otherwise noted.  
DIFFERENTIAL SMALL-SIGNAL  
FREQUENCY RESPONSE  
DIFFERENTIAL PERFORMANCE TEST CIRCUIT  
3
+5V  
DIS  
0
–3  
GD = +20V/V  
OPA847  
GD = +30V/V  
GD = +40V/V  
VO  
VI  
RF  
GD  
=
=
–6  
RG  
–5V  
RF  
RG  
50Ω  
GD = +50V/V  
–9  
RG  
50Ω  
VI  
RL  
VO  
–12  
–15  
–18  
RF  
RG = 50Ω  
O = 400mVPP  
RF Adjusted  
V
+5V  
OPA847  
10  
100  
1000  
Frequency (MHz)  
DIS  
–5V  
DIFFERENTIAL LARGE-SIGNAL  
FREQUENCY RESPONSE  
DIFFERENTIAL DISTORTION vs LOAD RESISTANCE  
–55  
–60  
35  
32  
29  
26  
23  
GD = 40V/V  
VO = 4VPP  
F = 5MHz  
GD = 40V/V  
–65  
–70  
VO = 400mVPP  
–75  
2nd-Harmonic  
3rd-Harmonic  
VO = 5VPP  
–80  
–85  
VO = 8VPP  
–90  
–95  
–100  
–105  
–110  
1
10  
100  
Frequency (MHz)  
1000  
50  
100 150 200 250 300 350 400 450 500  
Resistance ()  
DIFFERENTIAL DISTORTION vs FREQUENCY  
GD = 40V/V  
DIFFERENTIAL DISTORTION vs OUTPUT VOLTAGE  
–65  
–75  
–75  
–80  
GD = 40V/V  
RL = 400Ω  
F = 5MHz  
RL = 400Ω  
V
O = 4VPP  
–85  
2nd-Harmonic  
2nd-Harmonic  
–85  
–90  
–95  
–95  
3rd-Harmonic  
–100  
–105  
–110  
3rd-Harmonic  
–105  
–115  
1
10  
Frequency (MHz)  
100  
1
10  
Differential Output Voltage Swing (VPP  
)
OPA847  
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voltage noise for the op amp itself. This RG is suggested as  
a good starting point for design. Other values are certainly  
acceptable, if required by the design.  
APPLICATIONS INFORMATION  
WIDEBAND, NONINVERTING OPERATION  
The OPA847 provides a unique combination of a very low  
input voltage noise along with a very low distortion output  
stage to give one of the highest dynamic range op amps  
available. Its very high gain bandwidth product (GBP) can be  
used to either deliver high signal bandwidths at high gains, or  
to deliver very low distortion signals at moderate frequencies  
and lower gains. To achieve the full performance of the  
OPA847, careful attention to PC board layout and compo-  
nent selection is required, as discussed in the following  
sections of this data sheet.  
WIDEBAND, INVERTING GAIN OPERATION  
There can be significant benefits to operating the OPA847 as  
an inverting amplifier. This is particularly true when a matched  
input impedance is required. Figure 2 shows the inverting  
gain of a –40V/V circuit used as a starting point for the  
Typical Characteristics showing inverting mode performance.  
Driving this circuit from a 50  
source, and constraining the gain  
resistor (RG) to equal 50 , gives both a signal bandwidth and a noise  
advantage. RG, in this case, acts as both the input termination resistor  
and the gain setting resistor for the circuit. Although the signal gain  
for the circuit of Figure 2 is double that for Figure 1, their noise gains  
Figure 1 shows the noninverting gain of a +20V/V circuit used  
as the basis for most of the Typical Characteristics. Most of  
the curves are characterized using signal sources with a  
50driving impedance and with measurement equipment  
presenting a 50load impedance. In Figure 1, the 50Ω  
shunt resistor at the VI terminal matches the source imped-  
ance of the test generator, while the 50series resistor at  
the VO terminal provides a matching resistor for the mea-  
surement equipment load. Generally, data sheet voltage  
swing specifications are at the output pin (VO in Figure 1)  
while output power specifications are at the matched 50Ω  
load. The total 100load at the output combined with the  
790total feedback network load presents the OPA847 with  
an effective output load of 89for the circuit of Figure 1.  
are nearly equal when the 50source resistor is included. This has  
the interesting effect of approximately doubling the equivalent GBP for  
the amplifier. This can be seen by observing that the gain of –40  
bandwidth of 240MHz shown in the Typical Characteristics implies a  
gain bandwidth product of 9.6GHz, giving a far higher bandwidth at  
a gain of –40 than at a gain of +40. While the signal gain from RG to  
the output is –40, the noise gain for bandwidth setting purposes is  
1 + RF/(2 • RG). In the case of a –40V/V gain, using an RG = RS =  
50gives a noise gain = 1 + 2k/100= 21. This inverting gain of  
–40V/V therefore has a frequency response that more closely  
matches the gain of a +20 frequency response.  
If the signal source is actually the low impedance output of  
another amplifier, RG should be increased to be greater than  
the minimum value allowed at the output for that amplifier  
and RF adjusted to get the desired gain. It is critical for stable  
operation of the OPA847 that this driving amplifier show a  
very low output impedance through frequencies exceeding  
the expected closed-loop bandwidth for the OPA847.  
Voltage-feedback op amps, unlike current-feedback designs,  
can use a wide range of resistor values to set their gain. The  
circuit of Figure 1, and the specifications at other gains, use an  
RG set to 39.2and RF adjusted to get the desired gain. Using  
this guideline ensures that the noise added at the output due  
to the Johnson noise of the resistors does not significantly  
increase the total over that due to the 0.85nV/Hz input  
WIDEBAND, HIGH SENSITIVITY,  
TRANSIMPEDANCE DESIGN  
+5V  
+VS  
+5V  
+VS  
0.1µF  
6.8µF  
+
+
0.1µF  
6.8µF  
50Source  
VDIS  
50Load  
VDIS  
50Load  
50Ω  
VI  
VO  
VO  
50Ω  
50Ω  
OPA847  
0.01µF  
95.3Ω  
OPA847  
RF  
750Ω  
RG  
50Ω  
RF  
2kΩ  
50Source  
VI  
RG  
39.2Ω  
0.1µF  
6.8µF  
6.8µF  
0.1µF  
+
+
–VS  
–5V  
–VS  
–5V  
FIGURE 1. Noninverting G = +20 Specification and Test Circuit.  
FIGURE 2. Noninverting G = –40 Specification and Test Circuit.  
OPA847  
10  
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The high GBP and low input voltage and current noise for the  
OPA847 make it an ideal wideband transimpedance ampli-  
fier for low to moderate transimpedance gains. Very high  
transimpedance gains (> 100k) will benefit from the low  
input noise current of a JFET input op amp such as the  
OPA657. Unity-gain stability in the op amp is not required for  
application as a transimpedance amplifier. Figure 3 shows  
one possible transimpedance design example that would be  
particularly suitable for the 155Mbit data rate of an OC-3  
receiver. Designs that require high bandwidth from a large  
area detector with relatively low transimpedance gain will  
benefit from the low input voltage noise for the OPA847. The  
amplifier’s input voltage noise is peaked up over frequency  
by the diode source capacitance, and can (in many cases)  
become the limiting factor to input sensitivity. The key ele-  
ments to the design are the expected diode capacitance (CD)  
with the reverse bias voltage (–VB) applied, the desired  
transimpedance gain (RF), and the GBP for the OPA847  
(3900MHz). With these three variables set (including the  
parasitic input capacitance for the OPA847 added to CD), the  
feedback capacitor value (CF) can be set to control the  
frequency response.  
Equation 2 gives the approximate –3dB bandwidth that  
results if CF is set using Equation 1.  
GBP  
2πRF CD  
f 3dB  
=
Hz  
( )  
(2)  
The example of Figure 3 gives approximately 104MHz flat  
bandwidth using the 0.18pF feedback compensation capaci-  
tor. This bandwidth easily supports an OC-3 receiver with  
exceptional sensitivity.  
If the total output noise is bandlimited to a frequency less  
than the feedback pole frequency, a very simple expression  
for the equivalent input noise current is shown as Equation 3.  
2  
4kT  
RF  
e
RF  
( )  
eN2πCDF 2  
+
2
N   
i
EQ= i  
N
+
+
(3)  
3
where:  
iEQ = Equivalent input noise current if the output noise is  
bandlimited to F < 1/(2πRFCF)  
iN = Input current noise for the op amp inverting input  
eN = Input voltage noise for the op amp  
CD = Total Inverting Node Capacitance  
To achieve a maximally flat 2nd-order Butterworth frequency  
response, set the feedback pole as shown in Equation 1.  
f = Bandlimiting frequency in Hz (usually a post filter prior  
to further signal processing)  
+5V  
Evaluating this expression up to the feedback pole fre-  
quency at 74MHz for the circuit of Figure 3 gives an equiva-  
lent input noise current of 3.0pA/Hz. This is slightly higher  
than the 2.5pA/Hz input current noise for the op amp. This  
total equivalent input current noise is slightly increased by  
the last term in the equivalent input noise expression. It is  
essential in this case to use a low-voltage noise op amp. For  
example, if a slightly higher input noise voltage, but other-  
wise identical, op amp were used instead of the OPA847 in  
this application (say 2.0nV/Hz), the total input referred  
current noise would increase to 3.7pA/Hz. Low input volt-  
age noise is required for the best sensitivity in these wideband  
transimpedance applications. This is often unspecified for  
dedicated transimpedance amplifiers with a total output  
noise for a specified source capacitance given instead. It is  
the relatively high input voltage noise for those components  
that cause higher than expected output noise if the source  
capacitance is higher than specified.  
Power-supply  
decoupling not shown.  
100pF  
0.1µF  
12kΩ  
OPA847  
VDIS  
RF  
12kΩ  
–5V  
λ
CF  
1pF  
Photodiode  
0.18pF  
–VB  
FIGURE 3. Wideband, High Sensitivity, OC-3 Transimpedance  
Amplifier.  
1
GBP  
4πRF CD  
The output DC error for the circuit of Figure 3 is minimized  
by including a 12kto ground on the noninverting input.  
This reduces the contribution of input bias current errors (for  
total output offset voltage) to the offset current times the  
feedback resistor. To minimize the output noise contribution  
of this resistor, 0.01µF and 100pF capacitors are included in  
parallel. Worst-case output DC error for the circuit of Figure  
3 at 25°C is:  
=
(1)  
2πRF CF  
Adding the common-mode and differential mode input ca-  
pacitance (1.2 + 2.5)pF to the 1pF diode source capacitance  
of Figure 3, and targeting a 12ktransimpedance gain  
using the 3900MHz GBP for the OPA847 requires a feed-  
back pole set to 74MHz to get a nominal Butterworth fre-  
quency response design. This requires a total feedback  
capacitance of 0.18pF. That total is shown in Figure 3, but  
recall that typical surface-mount resistors have a parasitic  
capacitance of 0.2pF, leaving no external capacitor required  
for this design.  
Vos = ±0.5mV (input offset voltage) ± 0.6uA (input offset  
current) • 12k= ±7.2mV  
Worst-case output offset DC drift (over the 0°C to 70°C span) is:  
dVos/dT = ±1.5µV/°C (input offset drift) ± 2nA/°C (input  
offset current drift) • 12k= ±21.5µV/°C.  
OPA847  
SBOS251C  
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Even with bias current cancellation, the output DC errors are  
dominated in this example by the offset current term. Im-  
proved output DC precision and drift are possible, particu-  
larly at higher transimpedance gains, using the JFET input  
OPA657. The JFET input removes the input bias current  
from the error equation (eliminating the need for the resistor  
to ground on the noninverting input), leaving only the input  
offset voltage and drift as an output DC error term.  
Considering only the noise gain (which is the same as the  
noninverting signal gain) for the circuit of Figure 5, the low-  
frequency noise gain (NG1) is set by the resistor ratio, while  
the high-frequency noise gain (NG2) is set by the capacitor  
ratio. The capacitor values set both the transition frequencies  
and the high-frequency noise gain. If the high-frequency  
noise gain, determined by NG2 = 1 + CS/CF, is set to a value  
greater than the recommended minimum stable gain for the  
op amp, and the noise gain pole (set by 1/RFCF) is placed  
correctly, a very well controlled 2nd-order low-pass fre-  
quency response results.  
Included in the Typical Characteristics are transimpedance  
frequency response curves for a fixed 20kgain over  
various detector diode capacitance settings. These curves  
are repeated in Figure 4, along with the test circuit. As the  
photodiode capacitance changes, the feedback capacitor  
must change to maintain a stable and flat frequency re-  
sponse. Using Equation 1, CF is adjusted to give the  
Butterworth frequency responses shown in Figure 4.  
+5V  
VDIS  
VO  
OPA847  
PHOTODIODE TRANSIMPEDANCE  
FREQUENCY RESPONSE  
RG  
RF  
200Ω  
850Ω  
89  
RF = 20kΩ  
CD = 10pF  
VI  
CF Adjusted  
[20 log(20k)]  
CS  
39pF  
86  
83  
80  
77  
74  
71  
CF  
1.7pF  
CD = 20pF  
CD = 50pF  
CD = 100pF  
–5V  
FIGURE 5. Broadband, Low-Inverting Gain External  
Compensation.  
VO  
0.01µF  
OPA847  
20kΩ  
20kΩ  
IO  
CF  
CD  
To choose the values for both CS and CF, two parameters and only  
three equations need to be solved. The first parameter is the target  
high-frequency noise gain (NG2), which should be greater than the  
minimum stable gain for the OPA847. Here, a target of NG2 = 24 is  
used. The second parameter is the desired low-frequency signal  
gain, which also sets the low-frequency noise gain (NG1). To simplify  
this discussion, we will target a maximally flat 2nd-order low-pass  
Butterworth frequency response (Q = 0.707). The signal gain shown  
in Figure 5 sets the low-frequency noise gain to NG1 = 1 + RF/RG  
(= 5.25 in this example). Then, using only these two gains and the  
GBP for the OPA847 (3900MHz), the key frequency in the compen-  
sation is set by Equation 4.  
1
10  
Frequency (MHz)  
100  
FIGURE 4. Transimpedance Bandwidth vs CD.  
LOW-GAIN COMPENSATION FOR IMPROVED SFDR  
Where a low gain is desired, and inverting operation is  
acceptable, a new external compensation technique can be  
used to retain the full slew rate and noise benefits of the  
OPA847, while giving increased loop gain and the associ-  
ated distortion improvements offered by a non-unity-gain  
stable op amp. This technique shapes the loop gain for good  
stability, while giving an easily controlled 2nd-order low-pass  
frequency response. This technique is used for the circuit on  
the front page of this data sheet in a differential configuration  
to achieve extremely low distortion through high frequencies  
(< –90dBc through 30MHz). The amplifier portion of this  
circuit is set up for a differential gain of 8.5V/V from a  
differential input signal to the output. Using the input trans-  
former shown improves the noise figure and translates from  
a single-ended to a differential signal. If the source is differ-  
ential already, it can be fed directly into the gain setting  
resistors. To set the compensation capacitors (CS and CF),  
consider the half circuit of Figure 5, where the 50source  
is reflected through the 1:2 transformer, then cut in half, and  
grounded to give a total impedance to the AC ground for the  
circuit on the front page equal to 200.  
GBP  
NG  
NG 1  
NG 1  
NG  
ZO  
=
1−  
12  
(4)  
2
NG  
1
2
2
Physically, this ZO (4.4MHz for the values shown above) is  
set by 1/(2πRF(CF + CS)) and is the frequency at which the  
rising portion of the noise gain would intersect the unity gain  
if projected back to a 0dB gain. The actual zero in the noise  
gain occurs at NG1 • ZO and the pole in the noise gain occurs  
at NG2 • ZO. That pole is physically set by 1/(RFCF). Since  
GBP is expressed in Hz, multiply ZO by 2π and use to get CF  
by solving Equation 5.  
1
CF  
=
(= 1.76pF)  
(5)  
2πRFZONG2  
OPA847  
12  
SBOS251C  
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Finally, since CS and CF set the high-frequency noise gain,  
determine CS using Equation 6 (solving for CS by using NG2 = 24):  
LOW GAIN INVERTING BANDWIDTH  
G = –8  
1
0
CS = (NG 2 1)CF  
which gives CS = 40.6pF.  
(6)  
–1  
–2  
–3  
–4  
–5  
–6  
–7  
–8  
–9  
VO = 0.2VPP  
Both of these calculated values have been reduced slightly  
in Figure 5 to account for parasitics. The resulting closed-  
loop bandwidth is approximately equal to Equation 7.  
G = –1  
G = –2  
f – 3 dB  
ZO GBP  
(7)  
G = –4  
For the values shown in Figure 5, f–3dB is approximately  
131MHz. This is less than that predicted by simply dividing  
the GBP product by NG1. The compensation network controls  
the bandwidth to a lower value, while providing the full slew  
rate at the output and an exceptional distortion performance  
due to increased loop gain at frequencies below NG1 • ZO.  
1
10  
100  
1000  
Frequency (MHz)  
+5V  
Using this low-gain inverting compensation, along with the  
differential structure for the circuit shown on the front page of  
this data sheet, gives a significant reduction in harmonic  
distortion. The measured distortion at 2VPP output does not  
rise above –95dB until frequencies > 20MHz are applied.  
VDIS  
VO  
OPA847  
RF  
750Ω  
The Typical Characteristics show the exceptional bandwidth con-  
trol possible using this technique at low inverting gains. Figure 6  
repeats the measured results with the test circuit shown.  
RG  
–5V  
VI  
0Source  
CS  
CF  
The compensation capacitors, CS and CF, are set by targeting a  
high-frequency noise gain of 21 and using equations 4 through  
6. This approach allows relatively low inverting gain applications  
to use the full slew rate and low input noise of the OPA847.  
FIGURE 6. Low-Gain Inverting Performance.  
figures in the 10dB range (for a matched 50input) are  
easily achieved with just the OPA847, Figure 7 illustrates a  
technique to reduce the noise figure even further, while  
providing a broadband, high-gain HF amplifier stage using  
two stages of the OPA847.  
LOW-NOISE FIGURE,  
HIGH DYNAMIC RANGE AMPLIFIER  
The low input noise voltage of the OPA847 and its very high  
2-tone, 3rd-order intermodulation intercept can be used to  
good advantage as a fixed-gain amplifier. While input noise  
6.19kΩ  
+5V  
Input match  
set by this  
feedback path  
PO  
OPA847  
> 55dBm  
intercept  
to 30MHz  
+5V  
–5V  
50Source  
750Ω  
1.5kΩ  
1:2  
PI  
OPA847  
200Ω  
1.6pF  
4.3dB  
Noise  
Figure  
–5V  
46pF  
10pF  
420Ω  
PO  
PI  
Overall Gain  
= 35.6dB  
30.1Ω  
FIGURE 7. Very High Dynamic Range HF Amplifier.  
OPA847  
SBOS251C  
13  
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This circuit uses two stages of forward gain with an overall  
feedback loop to set the input impedance match. The input  
transformer provides both a noiseless voltage gain and a  
signal inversion to retain an overall noninverting signal path  
from PI to PO. The second amplifier stage is inverting to  
provide the correct feedback polarity through the 6.19kΩ  
resistor. To achieve a 50input match at the primary of the  
1:2 transformer, the secondary must see a 200load  
impedance. At higher frequencies, the match is provided by  
the 200resistor in series with 10pF. The low-noise figure  
(4.3dB) for this circuit is achieved by using the transformer,  
the low-voltage noise OPA847, and the input match set by  
the feedback at lower frequencies intended for this HF  
design. The 1st-stage amplifier provides a gain of +15V/V.  
The very high SFDR is provided by operating the output  
stage at a low signal gain of –2 and using the inverting  
compensation technique to shape the noise gain to hold it  
stable. This 2nd-stage compensation is set to intentionally  
bandlimit the overall response to approximately 100MHz. For  
output loads > 400, this circuit can give a 2-tone SFDR that  
exceeds 90dB through 30MHz. In narrowband applications,  
the 3rd-order intercept exceeds 55dBm. Besides offering a  
very high dynamic range, this circuit improves on standard  
HF amplifiers by offering a precisely controlled gain and a  
very flexible output interface capability.  
+5V  
VI  
VDIS  
50Ω  
50Ω  
R1  
50Ω  
VO  
OPA847  
–5V  
RF  
750Ω  
RG  
66.5Ω  
FIGURE 8. Low Noninverting Gain Flatness Trim.  
The effect of this noninverting gain flatness tune is shown in  
Figure 9. At an NG of 12, R1 is removed and only RF and RG  
are present in Figure 8. The peaking is typically 4.5dB, as  
shown in the small-signal frequency response curves versus  
gain curves at this setting. As R1 is decreased, the operating  
noise gain (NG) increases, reducing the peaking and band-  
width until the nominal design point of +20 noise gain gives  
a non-peaked response.  
NONINVERTING GAIN FLATNESS TUNE  
0.5  
NONINVERTING GAIN FLATNESS COMPENSATION  
V
O = 200mVPP  
NG = 12  
NG = 14  
NG = 16  
Decreasing the operating gain from the nominal design point of  
+20 decreases the phase margin. This increases Q for the  
closed-loop poles, peaks up the frequency response, and  
extends the bandwidth. A peaked frequency response shows  
overshoot and ringing in the pulse response, as well as higher  
integrated output noise. When operating the OPA847 at a  
noninverting gain < +12V/V, increased peaking and possible  
sustained oscillations may result. However, operation at low  
gains may be desirable to take advantage of the higher slew  
rate and exceptional DC precision of the OPA847. Numerous  
external compensation techniques are suggested for operating  
a high-gain op amp at low gains. Most of these give zero/pole  
pairs in the closed-loop response that cause long term settling  
tails in the pulse response and/or phase nonlinearity in the  
frequency response.  
0.4  
0.3  
AV = +12V/V  
NG = Noise Gain  
0.2  
0.1  
0
–0.1  
–0.2  
–0.3  
–0.4  
–0.5  
NG = 18  
NG = 20  
1
10  
100  
Frequency (MHz)  
1000  
FIGURE 9. Frequency Response Flatness with External  
Tuning Resistor.  
Figure 8 shows a resistor based compensation technique  
that allows the flatness at low noninverting signal gains to be  
controlled separately from the signal gain. This approach  
retains the full slew rate to the output but gives up some of  
the low-noise benefit of the OPA847. Including the effect of  
the total source impedance (25in Figure 8), tuning resistor  
R1 can be set using Equation 8.  
DIFFERENTIAL OPERATION  
Operating two OPA847 amplifiers in a differential inverting  
configuration can further suppress even-order harmonic terms.  
The Typical Characteristics show measured performance for  
this condition. These measurements were done at the relatively  
high gain of 40V/V. Even lower distortion is possible operating  
at lower gains using the external inverting compensation tech-  
niques, as discussed previously. For the distortion data pre-  
sented in Figure 10, the output swing is increased to 4VPP into  
400to allow direct comparison to the single-channel data at  
2VPP into 200. Comparing the 2nd- and 3rd-harmonics at  
20MHz in Figure 10 to the gain of +20, 2VPP, 200data, shows  
the 2nd-harmonic is reduced to –76dBc (from –67dBc) and the  
3rd-harmonic is reduced from –80dBc to –85dBc. Using the two  
RF + RS AV  
NG AV  
R1 =  
(8)  
where,  
AV = desired signal gain (+12V/V in Figure 8)  
NG = target noise gain (adjusted in Figure 9)  
RS = total source impedance  
OPA847  
14  
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OPA847 can support this mode of operation down to a single  
supply of +5V and up to a single supply of +12V. If shutdown  
is desired for single-supply operation, it is important to  
realize that the shutdown pin is referenced from the positive  
supply pin. Open collector (drain) interfaces are suggested  
for single-supply operation above +5V.  
–65  
–75  
GD = 40V/V  
RL = 400Ω  
V
O = 4VPP  
2nd-Harmonic  
–85  
–95  
DESIGN-IN TOOLS  
3rd-Harmonic  
DEMONSTRATION BOARDS  
–105  
–115  
Two PC boards are available to assist in the initial evaluation  
of circuit performance using the OPA847 in its two package  
styles. Both of these are available, free, as unpopulated PC  
boards delivered with descriptive documentation. The sum-  
mary information for these boards is shown in Table I.  
Contact your sales representative or go to the TI web site  
(www.ti.com) to request these evaluation boards.  
1
10  
Frequency (MHz)  
100  
FIGURE 10. Differential Distortion vs Frequency.  
amplifiers in this configuration has significantly reduced the  
2nd-harmonic, even after doubling the output voltage swing (to 4VPP  
and the gain (to 40V/V).  
)
BOARD  
PART  
NUMBER  
LITERATURE  
REQUEST  
NUMBER  
PRODUCT  
PACKAGE  
SINGLE-SUPPLY OPERATION  
OPA847ID  
SO-8  
DEMOPA68XU  
DEMOPA6XXN  
SBOU009  
SBOU010  
OPA847IDBV  
SOT23-6  
The OPA847 can be operated from a single power supply if  
system constraints require it. Operation from a single +5V to  
+12V supply is possible with minimal change in AC perfor-  
mance. The Typical Characteristics show the input and  
output voltage ranges for a bipolar supply range from ±2.5V  
to ±6.0V. The Common-Mode Input Range and Output Swing  
vs Supply Voltage curve shows that the required headroom  
on both the input and output pins remains at approximately  
1.5V over this entire range. On a single +5V supply, for  
instance, this means the noninverting input should remain  
centered at +2.5V ± 1V, as should the output pin. Figure 11  
shows an example application biasing the noninverting input  
at mid-supply and running an AC-coupled input to the invert-  
ing gain path. Since the gain resistor is blocked off for DC,  
the bias point on the noninverting input appears at the output,  
centering up the output as well as on the power supply. The  
TABLE I. Demo Board Part Numbers.  
MACROMODELS AND APPLICATIONS SUPPORT  
Computer simulation of circuit performance using SPICE is  
often a quick way to analyze the performance of the OPA847  
in its intended application. This is particularly true for video  
and RF amplifier circuits where parasitic capacitance and  
inductance can play a major role in circuit performance. A  
SPICE model for the OPA847 is available through the TI web  
site (www.ti.com). These models do a good job of predicting  
small-signal AC and transient performance under a wide  
variety of operating conditions. They do not do as well in  
predicting the harmonic distortion characteristics. These  
models do not attempt to distinguish between the package  
types in their small-signal AC performance.  
+VCC  
OPERATING SUGGESTIONS  
SETTING RESISTOR VALUES TO MINIMIZE NOISE  
+5V  
+12V  
Range  
The OPA847 provides a very low input noise voltage while  
requiring a low 18.1mA of quiescent current. To take full  
advantage of this low input noise, careful attention to the other  
possible noise contributors is required. See Figure 12 for the  
op amp noise analysis model with all the noise terms included.  
In this model, all the noise terms are taken to be noise voltage  
2RF  
2RF  
Power-supply decoupling  
not shown.  
VCC  
RF  
VO  
=
OPA847  
– VI  
0.01µF  
2
RG  
VDIS  
or current density terms in either nV/Hz or pA/Hz  
.
RG  
RF  
The total output spot noise voltage is computed as the  
square root of the squared contributing terms to the output  
noise power. This computation adds all the contributing noise  
powers at the output by superposition, then takes the square  
VI  
FIGURE 11. Single-Supply Inverting Amplifier.  
OPA847  
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practice, this only holds true when the phase margin ap-  
proaches 90°, as it does in high-gain configurations. At low  
gains (increased feedback factors), most high-speed ampli-  
fiers exhibit a more complex response with lower phase  
margin. The OPA847 is compensated to give a maximally flat  
2nd-order Butterworth closed-loop response at a noninverting  
gain of +20 (see Figure 1). This results in a typical gain of  
+20 bandwidth of 350MHz, far exceeding that predicted by  
dividing the 3900MHz GBP by 20. Increasing the gain causes  
the phase margin to approach 90° and the bandwidth to more  
closely approach the predicted value of (GBP/NG). At a gain  
of +50, the OPA847 very nearly matches the 78MHz band-  
width predicted using the simple formula and the typical GBP  
of 3900MHz.  
ENI  
EO  
OPA847  
RS  
IBN  
ERS  
RF  
4kTRS  
4kTRF  
IBI  
RG  
4kT  
RG  
4kT = 1.6E – 20J  
at 290°K  
FIGURE 12. Op Amp Noise Analysis Model.  
Inverting operation offers some interesting opportunities to  
increase the available GBP. When the source impedance is  
matched by the gain resistor (see Figure 2), the signal gain  
is (1 + RF/RG), while the noise gain for bandwidth purposes  
is (1 + RF/2RG). This cuts the noise gain almost in half,  
increasing the minimum operating gain for inverting opera-  
tion under these condition to –22 and the equivalent gain  
bandwidth product to > 7.8GHz.  
root to get back to a spot noise voltage. Equation 9 shows  
the general form for this output noise voltage using the terms  
illustrated in Figure 11.  
(9)  
EO = (E2NI + (IBNRS)2 + 4kTRS)NG2 + (IBIRF)2 + 4kTRFNG  
Dividing this expression by the noise gain (NG = 1 + RF/RG)  
gives the equivalent input referred spot noise voltage at the  
noninverting input, as shown in Equation 10.  
DRIVING CAPACITIVE LOADS  
One of the most demanding, and yet very common, load  
conditions for an op amp is capacitive loading. Often, the  
capacitive load is the input of an ADC, including additional  
external capacitance that may be recommended to improve  
ADC linearity. A high-speed, high open-loop gain amplifier  
like the OPA847 can be very susceptible to decreased  
stability and may give closed-loop response peaking when a  
capacitive load is placed directly on the output pin. When the  
amplifier’s open-loop output resistance is considered, this  
capacitive load introduces an additional pole in the signal  
path that can decrease the phase margin. Several external  
solutions to this problem are suggested. When the primary  
considerations are frequency response flatness, pulse re-  
sponse fidelity, and/or distortion, the simplest and most  
effective solution is to isolate the capacitive load from the  
feedback loop by inserting a series isolation resistor between  
the amplifier output and the capacitive load. This does not  
eliminate the pole from the loop response, but rather shifts it  
and adds a zero at a higher frequency. The additional zero  
acts to cancel the phase lag from the capacitive load pole,  
thus increasing the phase margin and improving stability.  
(10)  
2
I
R F  
NG  
4kTR  
NG  
BI  
F
E N  
=
E N2I  
+
(IBN R S  
)
2 +4kTR  
+
+
S
Putting high resistor values into Equation 10 can quickly  
dominate the total equivalent input referred noise. A 45Ω  
source impedance on the noninverting input adds a Johnson  
voltage noise term equal to the amplifier’s voltage noise by  
itself. As a simplifying constraint, set RG = RS in Equation 10  
and assume an RS/2 source impedance at the noninverting  
input, where RS is the signal source impedance and another  
matching RS to ground is at the noninverting input. This  
results in Equation 11, where NG > 12 is assumed to further  
simplify the expression.  
5
4
3R  
2
EN = EN2I  
+
(IB R S )  
2 +4kT  
S
(11)  
Evaluating this expression for RS = 50gives a total equiva-  
lent input noise of 1.4nV/Hz. Note that at these higher  
gains, the simplified input referred spot noise expression of  
Equation 11 does not include the gain. This is a good  
approximation for NG > 12, as is typically required by stability  
considerations.  
The Typical Characteristics help the designer pick a recom-  
mended RS versus capacitive load. The resulting frequency  
response curves show a flat response for several selected  
capacitive loads and recommended RS combinations. Para-  
sitic capacitive loads greater than 2pF can begin to degrade  
the performance of the OPA847. Long PC board traces,  
unmatched cables, and connections to multiple devices can  
easily cause this value to be exceeded. Always consider this  
effect carefully and add the recommended series resistor as  
close as possible to the OPA847 output pin (see the Board  
Layout section).  
FREQUENCY RESPONSE CONTROL  
Voltage-feedback op amps exhibit decreasing closed-loop  
bandwidth as the signal gain is increased. In theory, this  
relationship is described by the Gain Bandwidth Product  
(GBP) shown in the Electrical Characteristics. Ideally, divid-  
ing GBP by the noninverting signal gain (also called the  
Noise Gain, or NG) predicts the closed-loop bandwidth. In  
OPA847  
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The criterion for setting the RS resistor is a maximum band-  
width, flat frequency response at the load. For the OPA847  
operating in a gain of +20, the frequency response at the  
output pin is very flat to begin with, allowing relatively small  
values of RS to be used for low capacitive loads. As the  
signal gain is increased, the unloaded phase margin also  
increases. Driving capacitive loads at higher gains requires  
lower RS values than those shown for a gain of +20.  
If the full envelope of the two frequencies needs to be 2VPP,  
this requires each tone to be 4dBm. The 3rd-order  
intermodulation spurious tones will then be 2(34 – 4) =  
60dBc below the test-tone power level (–56dBm). If this  
same 2VPP 2-tone envelope is delivered directly into the  
input of an ADC without the matching loss or the loading of  
the 50network, the intercept would increase to at least  
40dBm. With the same signal and gain conditions, but now  
driving directly into a light load, the spurious tones will then  
be at least 2(40 – 4) = 72dBc below the 4dBm test-tone  
power levels centered on 30MHz. Tests have shown that  
they are in fact much lower due to the lighter loading  
presented by most ADCs.  
DISTORTION PERFORMANCE  
The OPA847 is capable of delivering an exceptionally low  
distortion signal at high frequencies over a wide range of  
gains. The distortion plots in the Typical Characteristics show  
the typical distortion under a wide variety of conditions. Most  
of these plots are limited to a 110dB dynamic range. The  
OPA847’s distortion driving a 200load does not rise above  
–90dBc until either the signal level exceeds 2.0VPP and/or  
the fundamental frequency exceeds 5MHz. Distortion in the  
audio band is < –130dBc.  
DC ACCURACY AND OFFSET CONTROL  
The OPA847 can provide excellent DC signal accuracy due  
to its high open-loop gain, high common-mode rejection, high  
power-supply rejection, and low input offset voltage and bias  
current offset errors. To take full advantage of its low ±0.5mV  
input offset voltage, careful attention to the input bias current  
cancellation is also required. The low-noise input stage for  
the OPA847 has a relatively high input bias current (19µA  
typical into the pins), but with a very close match between the  
two input currents—typically ±100nA input offset current.  
Figures 13 and 14 show typical distributions of input offset  
voltage and current for the OPA847.  
Generally, until the fundamental signal reaches very high  
frequencies or powers, the 2nd-harmonic dominates the dis-  
tortion with a negligible 3rd-harmonic component. Focusing  
then on the 2nd-harmonic, increasing the load impedance  
improves distortion directly. Remember that the total load  
includes the feedback network—in the noninverting configura-  
tion this is the sum of RF + RG, while in the inverting  
configuration this is only RF (see Figure 2). Increasing the  
output voltage swing increases harmonic distortion directly. A  
6dB increase in output swing generally increases the 2nd-  
harmonic 12dB and the 3rd-harmonic 18dB. Increasing the  
signal gain also increases the 2nd-harmonic distortion. Finally,  
the distortion increases as the fundamental frequency in-  
creases due to the rolloff in the loop gain with frequency.  
Conversely, the distortion improves going to lower frequencies  
down to the dominant open-loop pole at approximately 80kHz.  
1200  
Mean = 48µV  
Standard Deviation = 110µV  
1000  
Total Count = 4040  
800  
600  
400  
200  
0
The OPA847 has an extremely low 3rd-order harmonic  
distortion. This also gives a high 2-tone 3rd-order  
intermodulation intercept, as shown in the Typical Character-  
istics. This intercept curve is defined at the 50load when  
driven through a 50matching resistor to allow direct  
comparisons to RF devices. This matching network attenu-  
ates the voltage swing from the output pin to the load by 6dB.  
If the OPA847 drives directly into the input of a high-  
impedance device, such as an ADC, this 6dB attenuation is  
not taken. Under these conditions, the intercept as reported  
in the Typical Characteristics increases by a minimum of  
6dBm. The intercept is used to predict the intermodulation  
spurious power levels for two closely spaced frequencies. If  
the two test frequencies, f1 and f2, are specified in terms of  
average and delta frequency, fO = (f1 + f2)/2 and F = |f2 – f1| /2,  
the two 3rd-order, close-in spurious tones appear at fO ± 3 • F.  
The difference between the two equal test-tone power levels  
and these intermodulation spurious power levels is given by  
dBc = 2(IM3 – PO), where IM3 is the intercept taken from the  
Typical Characteristics and PO is the power level in dBm at  
the 50load for one of the two closely spaced test frequen-  
cies. For instance, at 30MHz, the OPA847 at a gain of +20  
has an intercept of 34dBm at a matched 50load.  
µV  
FIGURE 13. Input Offset Voltage Distribution in µV.  
900  
Mean = 50nA  
Standard Deviation = 120nA  
Total Count = 4040  
800  
700  
600  
500  
400  
300  
200  
100  
0
nA  
FIGURE 14. Input Offset Current Distribution in nA.  
OPA847  
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The total output offset voltage can be considerably reduced  
by matching the source impedances looking out of the two  
inputs. For example, one way to add bias current cancella-  
tion to the circuit of Figure 1 is to insert a 12.1series resistor  
into the noninverting input from the 50terminating resistor.  
When the 50source resistor is DC coupled, this increases  
the source impedance for the noninverting input bias current  
to 37.1. Since this is now equal to the impedance looking  
out of the inverting input (RF || RG) for Figure 1, the circuit  
cancels the gains for the bias currents to the output, leaving  
only the offset current times the feedback resistor as a  
residual DC error term at the output. Using the 750Ω  
feedback resistor, this output error is now less than  
±0.85µA • 750= ±640µV over the full temperature range for  
the circuit of Figure 1, with a 12.1resistor added as de-  
scribed. The output DC offset is then dominated by the  
input offset voltage multiplied by the signal gain. For the  
circuit of Figure 1, this is a worst-case output DC offset of  
±0.6mV • 20 = ±12mV over the full temperature range.  
In this case, the input is brought into an inverting gain resistor  
with the DC adjustment as an additional current summed  
into the inverting node. The resistor values setting this offset  
adjustment are much larger than the signal path resistors.  
This ensures that this adjustment has minimal impact on the  
loop gain and, hence, the frequency response.  
POWER SHUTDOWN OPERATION  
The OPA847 provides an optional power shutdown feature  
that can be used to reduce system power. If the VDIS control  
pin is left unconnected, the OPA847 operates normally. This  
shutdown is intended only as a power saving feature. For-  
ward path isolation is very good for small signals. Large  
signal isolation is not ensured. Using this feature to multiplex  
two or more outputs together is not recommended. Large  
signals applied to the shutdown output stages can turn on  
parasitic devices, degrading signal linearity for the desired  
channel.  
Turn-on time is very quick from the shutdown condition,  
typically < 60ns. Turn-off time is strongly dependent on the  
external circuit configuration, but is typically 200ns for the  
circuit of Figure 1. Using the OPA847 with higher external  
resistor values, such has high-gain transimpedance circuits,  
slows the shutdown time since the time constants for the  
internal nodes to discharge are longer.  
A fine-scale output offset null, or DC operating point adjust-  
ment, is sometimes required. Numerous techniques are  
available for introducing a DC offset control into an op amp  
circuit. Most of these techniques eventually reduce to setting  
up a DC current through the feedback resistor. One key  
consideration to selecting a technique is to ensure that it has  
a minimal impact on the desired signal path frequency  
response. If the signal path is intended to be noninverting,  
the offset control is best applied as an inverting summing  
signal to avoid interaction with the signal source. If the signal  
path is intended to be inverting, applying the offset control to  
the noninverting input can be considered. For a DC-coupled  
inverting input signal, this DC offset signal sets up a DC  
current back into the source that must be considered. An  
offset adjustment placed on the inverting op amp input can  
also change the noise gain and frequency response flatness.  
Figure 15 shows one example of an offset adjustment for a  
DC-coupled signal path that has minimum impact on the  
signal frequency response.  
To shutdown, the control pin must be asserted low. This logic  
control is referenced to the positive supply, as shown in the  
simplified circuit of Figure 16.  
+VS  
8kΩ  
Q1  
+5V  
VCC  
Power-supply decoupling  
not shown.  
17kΩ  
120kΩ  
VO  
OPA847  
0.1µF  
48Ω  
IS  
VDIS  
Control  
–VS  
VEE  
–5V  
FIGURE 16. Simplified Shutdown Control Circuit.  
+5V  
RG  
50Ω  
RF  
1kΩ  
In normal operation, base current to Q1 is provided through  
the 120kresistor, while the emitter current through the 8kΩ  
resistor sets up a voltage drop that is inadequate to turn on  
the two diodes in Q1’s emitter. As VDIS is pulled low,  
additional current is pulled through the 8kresistor, even-  
tually turning on these two diodes ( 180µA). At this point,  
any further current pulled out of VDIS goes through those  
diodes holding the emitter-base voltage of Q1 at approxi-  
mately 0V. This shuts off the collector current out of Q1,  
turning the amplifier off. The supply current in the shutdown  
mode is only that required to operate the circuit of Figure 16.  
VI  
5kΩ  
5kΩ  
±200mV Output Adjustment  
20kΩ  
100Ω  
0.1µF  
V
RF  
O = –  
VI  
= –20V/V  
RG  
–5V  
FIGURE 15. DC-Coupled, Inverting Gain of –20 with Output  
Offset Adjustment.  
OPA847  
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The shutdown feature for the OPA847 is a positive-supply  
referenced, current-controlled interface. Open-collector (or  
drain) interfaces are most effective, as long as the controlling  
logic can sustain the resulting voltage (in open mode) that  
appears at the VDIS pin. The VDIS pin voltage is one diode  
below the positive supply voltage applied to the OPA847 if the  
logic voltage is open. For voltage output logic interfaces, the  
on/off voltage levels described in the Electrical Characteristics  
apply only for a +5V supply. An open-drain interface is  
recommended for a shutdown operation using a higher  
positive supply and/or logic families with inadequate high-  
level voltage swings.  
input, it can react with the source impedance to cause  
unintentional bandlimiting. To reduce unwanted capaci-  
tance, create a window around the signal I/O pins in all of the  
ground and power planes around these pins. Otherwise,  
ground and power planes should be unbroken elsewhere on  
the board.  
b) Minimize the distance (< 0.25") from the power-supply  
pins to high-frequency 0.1µF decoupling capacitors. At the  
device pins, the ground and power plane layout should not  
be in close proximity to the signal I/O pins. Avoid narrow  
power and ground traces to minimize inductance between  
the pins and the decoupling capacitors. The power-supply  
connections should always be decoupled with these capaci-  
tors. Larger (2.2µF to 6.8µF) decoupling capacitors, effective  
at lower frequencies, should also be used on the main supply  
pins. These can be placed somewhat further from the device  
and can be shared among several devices in the same area  
of the PC board.  
THERMAL ANALYSIS  
The OPA847 does not require heatsinking or airflow in most  
applications. Maximum desired junction temperature sets the  
maximum allowed internal power dissipation, as described  
here. In no case should the maximum junction temperature  
be allowed to exceed 150°C.  
c) Careful selection and placement of external compo-  
nents preserves the high-frequency performance of the  
OPA847. Use resistors that have low reactance at high  
frequencies. Surface-mount resistors work best and allow a  
tighter overall layout. Metal film and carbon composition  
axially leaded resistors can also provide good high-fre-  
quency performance. Again, keep their leads and PC board  
trace length as short as possible. Never use wirewound type  
resistors in a high-frequency application. Since the output pin  
and inverting input pin are the most sensitive to parasitic  
capacitance, always position the feedback and series output  
resistor, if any, as close as possible to the output pin. Other  
network components, such as noninverting input termination  
resistors, should also be placed close to the package. Where  
double-side component mounting is allowed, place the feed-  
back resistor directly under the package on the other side of  
the board between the output and inverting input pins. Even  
with a low parasitic capacitance shunting the external resis-  
tors, excessively high resistor values can create significant  
time constants that can degrade performance. Good axial  
metal film or surface-mount resistors have approximately  
0.2pF in shunt with the resistor. For resistor values > 2.0k,  
this parasitic capacitance can add a pole and/or zero below  
400MHz that can effect circuit operation. Keep resistor val-  
ues as low as possible, consistent with load driving consid-  
erations. It has been suggested here that a good starting  
point for design would be to set RG to 39.2. Doing this  
automatically keeps the resistor noise terms low, and mini-  
mizes the effect of their parasitic capacitance. Transimped-  
ance applications can use much higher resistor values. The  
compensation techniques described in this data sheet allow  
excellent frequency response control, even with very high  
feedback resistor values.  
Operating junction temperature (TJ) is given by TA + PD θJA.  
The total internal power dissipation (PD) is the sum of  
quiescent power (PDQ) and additional power dissipated in the  
output stage (PDL) to deliver load power. Quiescent power is  
simply the specified no-load supply current times the total  
supply voltage across the part. PDL depends on the required  
output signal and load but would, for a grounded resistive  
load, be at a maximum when the output is fixed at a voltage  
equal to half either supply voltage (for equal bipolar sup-  
2
plies). Under this worst-case condition, PDL = VS /(4 • RL),  
where RL includes feedback network loading. This is the  
absolute highest power that can be dissipated for a given RL.  
All actual applications dissipate less power in the output  
stage.  
Note that it is the power in the output stage and not into the  
load that determines internal power dissipation.  
As a worst-case example, compute the maximum TJ using an  
OPA847IDBV (SOT23-6 package) in the circuit of Figure 1  
operating at the maximum specified ambient temperature of  
+85°C and driving a grounded 100load. Maximum inter-  
nal power is:  
PD = 10V • 18.9mA + 52/(4(100|| 789)) = 259mW  
Maximum TJ = +85°C + (0.26W • 150°C/W) = 124°C  
All actual applications will operate at a lower junction tem-  
perature than the 124°C computed above. Compute your  
actual output stage power to get an accurate estimate of  
maximum junction temperature, or use the results shown  
here as an absolute maximum.  
BOARD LAYOUT  
d) Connections to other wideband devices on the board  
can be made with short, direct traces or through onboard  
transmission lines. For short connections, consider the trace  
and the input to the next device as a lumped capacitive load.  
Relatively wide traces (50mils to 100mils) should be used,  
preferably with ground and power planes opened up around  
them. Estimate the total capacitive load and set RS from the  
Achieving optimum performance with a high-frequency am-  
plifier like the OPA847 requires careful attention to board  
layout parasitics and external component types. Recommen-  
dations that will optimize performance include:  
a) Minimize parasitic capacitance to any AC ground for all  
of the signal I/O pins. Parasitic capacitance on the output and  
inverting input pins can cause instability: on the noninverting  
OPA847  
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19  
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plot of Recommended RS vs Capacitive Load. Low parasitic  
capacitive loads (< 4pF) may not need an RS, since the  
OPA847 is nominally compensated to operate with a 2pF  
parasitic load. Higher parasitic capacitive loads without an  
RS are allowed as the signal gain increases from +20V/V  
(increasing the unloaded phase margin). If a long trace is  
required, and the 6dB signal loss intrinsic to a doubly-  
terminated transmission line is acceptable, implement a  
matched impedance transmission line using microstrip or  
stripline techniques (consult an ECL design handbook for  
microstrip and stripline layout techniques). A 50environ-  
ment is normally not necessary onboard and, in fact, a higher  
impedance environment improves distortion, as shown in the  
distortion versus load plots. With a characteristic board trace  
impedance defined based on board material and trace di-  
mensions, a matching series resistor into the trace from the  
output of the OPA847 is used, as well as a terminating shunt  
resistor at the input of the destination device. Remember  
also that the terminating impedance is the parallel combina-  
tion of the shunt resistor and the input impedance of the  
destination device; this total effective impedance should be  
set to match the trace impedance. If the 6dB attenuation of  
a doubly-terminated transmission line is unacceptable, a  
long trace can be series-terminated at the source-end only.  
Treat the trace as a capacitive load in this case and set the  
series resistor value as shown in the plot of Recommended  
RS vs Capacitive Load. This does not preserve signal integ-  
rity as well as a doubly-terminated line. If the input imped-  
ance of the destination device is low, there will be some  
signal attenuation due to the voltage divider formed by the  
series output into the terminating impedance.  
tremely troublesome parasitic network that can make it  
almost impossible to achieve a smooth, stable frequency  
response. Best results are obtained by soldering the OPA847  
onto the board.  
INPUT AND ESD PROTECTION  
The OPA847 is built using a very high-speed complementary  
bipolar process. The internal junction breakdown voltages are  
relatively low for these very small geometry devices. These  
breakdowns are reflected in the Absolute Maximum Ratings  
table. All device pins are protected with internal ESD protec-  
+VCC  
External  
Pin  
Internal  
Circuitry  
–VCC  
FIGURE 17. Internal ESD Protection.  
tion diodes to the power supplies, as shown in Figure 17.  
These diodes provide moderate protection to input overdrive  
voltages above the supplies as well. The protection diodes  
can typically support 30mA continuous current. Where higher  
currents are possible (e.g., in systems with ±15V supply parts  
driving into the OPA847), current limiting series resistors  
should be added into the two inputs. Keep these resistor  
values as low as possible, since high values degrade both  
noise performance and frequency response.  
e) Socketing a high-speed part like the OPA847 is not  
recommended. The additional lead length and pin-to-pin  
capacitance introduced by the socket can create an ex-  
OPA847  
20  
SBOS251C  
www.ti.com  
PACKAGE DRAWINGS  
D (R-PDSO-G**)  
PLASTIC SMALL-OUTLINE PACKAGE  
8 PINS SHOWN  
0.020 (0,51)  
0.014 (0,35)  
0.050 (1,27)  
8
0.010 (0,25)  
5
0.244 (6,20)  
0.228 (5,80)  
0.008 (0,20) NOM  
0.157 (4,00)  
0.150 (3,81)  
Gage Plane  
1
4
0.010 (0,25)  
0°– 8°  
A
0.044 (1,12)  
0.016 (0,40)  
Seating Plane  
0.010 (0,25)  
0.069 (1,75) MAX  
0.004 (0,10)  
0.004 (0,10)  
PINS **  
8
14  
16  
DIM  
A MAX  
0.197  
(5,00)  
0.344  
(8,75)  
0.394  
(10,00)  
0.189  
(4,80)  
0.337  
(8,55)  
0.386  
(9,80)  
A MIN  
4040047/E 09/01  
NOTES: A. All linear dimensions are in inches (millimeters).  
B. This drawing is subject to change without notice.  
C. Body dimensions do not include mold flash or protrusion, not to exceed 0.006 (0,15).  
D. Falls within JEDEC MS-012  
OPA847  
SBOS251C  
21  
www.ti.com  
PACKAGE DRAWINGS (Cont.)  
DBV (R-PDSO-G6)  
PLASTIC SMALL-OUTLINE  
0,50  
0,25  
M
0,20  
0,95  
6
6X  
4
0,15 NOM  
1,70  
1,50  
3,00  
2,60  
1
3
Gage Plane  
3,00  
2,80  
0,25  
0 –8  
0,55  
0,35  
Seating Plane  
0,10  
1,45  
0,95  
0,05 MIN  
4073253-5/G 01/02  
NOTES: A. All linear dimensions are in millimeters.  
B. This drawing is subject to change without notice.  
C. Body dimensions do not include mold flash or protrusion.  
D. Leads 1, 2, 3 may be wider than leads 4, 5, 6 for package orientation.  
OPA847  
22  
SBOS251C  
www.ti.com  
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