OPT101P现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

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产品型号OPT101P的概述

OPT101P芯片概述 OPT101P是一款集成光电传感器，它结合了光敏元件与信号处理电路，广泛应用于光检测、光测量及其他需要实时光照响应的系统中。该芯片的设计使其既适合于低功耗应用，又具备良好的灵敏度和线性响应，能够在各种照明条件下进行可靠的光信号探测，使其在许多领域得到应用，包括工业、医疗、建筑自动化等。 OPT101P的核心功能在于将光信号转换为电信号，它采用了多个先进技术，保证了良好的性能参数，如高增益、低噪声和广泛的光谱响应范围。这些特性使得OPT101P在精确测量光强度和进行光学成像时表现尤为出色。 OPT101P详细参数 - 工作电源电压: 2.7V至36V - 输出电压范围: 0V至负供电电压 - 增益: 可调增益范围从0.1至1000 - 响应时间: 小于0.2ms - 光谱响应范围: 400nm至1100nm - 线性范围: 典型输入光强度从0至10,000 lx ...

产品型号OPT101P的Datasheet PDF文件预览

OPT101

MONOLITHIC PHOTODIODE AND

SINGLE-SUPPLY TRANSIMPEDANCE AMPLIFIER

DESCRIPTION

FEATURES

The OPT101 is a monolithic photodiode with on-chip

transimpedance amplifier. Output voltage increases

linearly with light intensity. The amplifier is designed

for single or dual power supply operation, making it

ideal for battery operated equipment.

● SINGLE SUPPLY: +2.7 to +36V

● PHOTODIODE SIZE: 0.090 x 0.090 inch

● INTERNAL 1MΩ FEEDBACK RESISTOR

● HIGH RESPONSIVITY: 0.45A/W (650nm)

● BANDWIDTH: 14kHz at R_F= 1MΩ

● LOW QUIESCENT CURRENT: 120µA

The integrated combination of photodiode and

transimpedance amplifier on a single chip eliminates

the problems commonly encountered in discrete de-

signs such as leakage current errors, noise pick-up and

gain peaking due to stray capacitance. The 0.09 x 0.09

inch photodiode is operated in the photoconductive

mode for excellent linearity and low dark current.

● AVAILABLE IN 8-PIN DIP, 5-PIN SIP, AND

8-LEAD SURFACE MOUNT PACKAGES

APPLICATIONS

The OPT101 operates from +2.7V to +36V supplies

and quiescent current is only 120µA. It is available in

clear plastic 8-pin DIP, 5-pin SIP and J-formed DIP for

surface mounting. Temperature range is 0°C to 70°C.

● MEDICAL INSTRUMENTATION

● LABORATORY INSTRUMENTATION

● POSITION AND PROXIMITY SENSORS

● PHOTOGRAPHIC ANALYZERS

● BARCODE SCANNERS

● SMOKE DETECTORS

● CURRENCY CHANGERS

SPECTRAL RESPONSIVITY

0.7

0.6

0.5

0.4

0.3

0.2

0.1

Ultraviolet

Infrared

(Pin available

on DIP only.)

V+

0.6

0.5

0.4

0.3

0.2

0.1

(2)

3pF

Using Internal

1MΩ Resistor

1MΩ

(4)

(5)

8pF

7.5mV

V_B

200 300 400 500 600 700 800 900 1000 1100

OPT101

Wavelength (nm)

(1)

(3)

DIP

(SIP)

International Airport Industrial Park

•

Mailing Address: PO Box 11400, Tucson, AZ 85734

FAXLine: (800) 548-6133 (US/Canada Only)

• Street Address: 6730 S. Tucson Blvd., Tucson, AZ 85706 • Tel: (520) 746-1111 • Twx: 910-952-1111

Internet: http://www.burr-brown.com/

•

Cable: BBRCORP

•

Telex: 066-6491

•

FAX: (520) 889-1510

•

Immediate Product Info: (800) 548-6132

PDS-11257D

Printed in U.S.A. March, 1998

OPT101

SPECIFICATIONS

At T_A= +25°C, V_S= +2.7V to +36V, λ = 650nm, internal 1MΩ feedback resistor, and R_L= 10kΩ, unless otherwise noted.

OPT101P, W

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

RESPONSIVITY

Photodiode Current

Voltage Output

vs Temperature

Unit to Unit Variation

Nonlinearity⁽¹⁾

650nm

0.45

100

A/W

V/µW

ppm/°C

% of FS

in²

mm²

650nm

±5

FS Output = 24V

(0.090 x 0.090in)

(2.29 x 2.29mm)

±0.01

0.008

5.2

Photodiode Area

DARK ERRORS, RTO⁽²⁾

Offset Voltage, Output

vs Temperature

+7.5

±2.5

+10

100

µV/°C

µV/V

vs Power Supply

V_S= +2.7V to +36V

Voltage Noise, Dark, f_B= 0.1Hz to 20kHz

V_S= +15V, V_PIN3= –15V

300

µVrms

TRANSIMPEDANCE GAIN

Resistor

Tolerance, P

MΩ

±0.5

±50

±2

vs Temperature

ppm/°C

FREQUENCY RESPONSE

Bandwidth

Rise Fall Time, 10% to 90%

Settling Time, 0.05%

0.1%

V_OUT= 10Vp-p

160

kHz

µs

V_OUT= 10V Step

_OUT= 10V Step

Overload Recovery

100%, Return to Linear Operation

OUTPUT

Voltage Output, High

Capacitive Load, Stable Operation

Short-Circuit Current

(V_S) – 1.3

(V_S) – 1.15

V_S= 36V

POWER SUPPLY

Operating Voltage Range

Quiescent Current

+2.7

+36

240

µA

Dark, V_PIN3= 0V

R_L= ∞, V_OUT= 10V

120

220

TEMPERATURE RANGE

Specification

Operating

–25

+70

+85

°C

Storage

Thermal Resistance, θ_JA

100

°C/W

NOTES: (1) Deviation in percent of full scale from best-fit straight line. (2) Referred to Output. Includes all error sources.

PHOTODIODE SPECIFICATIONS

T_A= +25°C, V_S= +2.7V to +36V unless otherwise noted.

Photodiode of OPT101P

TYP

PARAMETER

CONDITIONS

MIN

MAX

UNITS

Photodiode Area

(0.090 x 0.090in)

(2.29 x 2.29mm)

650nm

0.008

5.2

0.45

in²

mm²

A/W

Current Responsivity

650nm

V_DIODE= 7.5mV

865

2.5

µA/W/cm²

Dark Current

vs Temperature

Capacitance

doubles every 7°C

1200

The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes

no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change

without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant

any BURR-BROWN product for use in life support devices and/or systems.

OPT101

OP AMP SPECIFICATIONS

At T_A= +25°C, V_S= +2.7V to +36V, λ = 650nm, internal 1MΩ feedback resistor, and R_L= 10kΩ, unless otherwise noted.

OPT101 Op Amp⁽¹⁾

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNITS

INPUT

Offset Voltage

vs Temperature

vs Power Supply

Input Bias Current

vs Temperature

±0.5

±2.5

165

µV/°C

µV/V

(–) Input

pA/°C

Input Impedance

Differential

Common-Mode

Common-Mode Input Voltage Range

Common-Mode Rejection

400 || 5

250 || 35

0 to [(V_S) – 1]

MΩ || pF

GΩ || pF

Linear Operation

OPEN-LOOP GAIN

Open-loop Voltage Gain

FREQUENCY RESPONSE

Gain-Bandwidth Product⁽²⁾

Slew Rate

Settling Time 1%

0.1%

5.8

7.7

8.0

MHz

V/µs

µs

0.05%

OUTPUT

Voltage Output, High

Short-Circuit Current

(V_S) – 1.3

+2.7

(V_S) – 1.15

_S= +36V

POWER SUPPLY

Operating Voltage Range

Quiescent Current

+36

240

µA

Dark, V_PIN3= 0V

R_L∞, V_OUT= 10V

120

220

NOTES: (1) Op amp specifications provided for information and comparison only. (2) Stable gains ≥ 10V/V.

OPT101

PIN CONFIGURATIONS

ELECTROSTATIC

DISCHARGE SENSITIVITY

Top View

DIP

This integrated circuit can be damaged by ESD. Burr-Brown

recommends that all integrated circuits be handled with ap-

propriate precautions. Failure to observe proper handling and

installation procedures can cause damage.

V_S

Common

–In

–V

(1)

1MΩ Feedback

Output

ESD damage can range from subtle performance degradation

to complete device failure. Precision integrated circuits may

be more susceptible to damage because very small parametric

changes could cause the device not to meet its published

specifications.

NOTE: (1) Photodiode location.

Top View

SIP

Common

V_S

–V

MOISTURE SENSITIVITY

AND SOLDERING

(1)

1MΩ Feedback

Output

Clear plastic does not contain the structural-enhancing fillers

used in black plastic molding compound. As a result, clear

plastic is more sensitive to environmental stress than black

plastic. This can cause difficulties if devices have been stored

in high humidity prior to soldering. The rapid heating during

soldering can stress wire bonds and cause failures. Prior to

soldering,itisrecommendedthatplasticdevicesbebaked-out

at +85°C for 24 hours.

ABSOLUTE MAXIMUM RATINGS

Supply Voltage (V_Sto “Common” or pin 3) ................................ 0 to +36V

Output Short-Circuit (to ground) ............................................... Continuous

Operating Temperature ..................................................... –25°C to +85°C

Storage Temperature ........................................................ –25°C to +85°C

Junction Temperature ...................................................................... +85°C

Lead Temperature (soldering, 10s) ................................................ +300°C

(Vapor-Phase Soldering Not Recommended)

The fire-retardant fillers used in black plastic are not compat-

ible with clear molding compound. The OPT101 plastic

packages cannot meet flammability test, UL-94.

PACKAGE INFORMATION

PACKAGE DRAWING

PRODUCT

COLOR

PACKAGE

NUMBER⁽¹⁾

OPT101P

OPT101P-J

OPT101W

Clear

8-Pin Plastic DIP

006-1

006-4

321

Clear 8-Lead Surface Mount⁽²⁾

Clear

5-Pin Plastic SIP

NOTE: (1) For detailed drawing and dimension table, please see end of data

sheet, or Appendix C of Burr-Brown IC Data Book. (2) 8-pin DIP with J-formed

leads for surface mounting.

OPT101

TYPICAL PERFORMANCE CURVES

At T_A= +25°C, V_S= +2.7V to +36V, λ = 650nm, internal 1MΩ feedback resistor, and R_L= 10kΩ, unless otherwise noted.

NORMALIZED SPECTRAL RESPONSIVITY

VOLTAGE RESPONSIVITY vs RADIANT POWER

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

Ultraviolet

Infrared

70°C

25°C

650nm

(0.45A/W)

0.1

λ = 650nm

0.01

0.001

200 300 400 500 600 700 800 900 1000 1100

0.01

0.1

100

Wavelength (nm)

Radiant Power (µW)

VOLTAGE RESPONSIVITY vs IRRADIANCE

VOLTAGE RESPONSIVITY vs FREQUENCY

R_F= 10MΩ

0.1

_F= 1MΩ

0.1

_F= 100kΩ, C_EXT= 33pF

0.01

0.001

_F= 50kΩ, C_EXT= 56pF

0.01

λ = 650nm

0.001

100

10k

100k

0.001

0.01

0.1

100

Frequency (Hz)

Irradiance (W/m²)

RESPONSE vs INCIDENT ANGLE

DARK V_OUTvs TEMPERATURE

7.8

7.6

7.4

7.2

1.0

0.8

0.6

0.4

0.2

1.0

θ_X

SIP Package

0.8

0.6

0.4

0.2

θ_X

θ_Y

Plastic

DIP Package

θ_X

θ_Y

±20

±40

±60

±80

Temperature (°C)

Incident Angle (°)

OPT101

TYPICAL PERFORMANCE CURVES (CONT)

At T_A= +25°C, V_S= +2.7V to +36V, λ = 650nm, internal 1MΩ feedback resistor, and R_L= 10kΩ, unless otherwise noted.

QUIESCENT CURRENT vs TEMPERATURE

QUIESCENT CURRENT vs (V_OUT– V_PIN3

)

300

275

250

225

200

175

150

125

100

300

250

200

150

100

_S= 15V

V_S= 36V

_S= 15V, V_OUT– V

_PIN3= 15V

_S= 2.7V

_S= 5V, V_OUT– V

_PIN3= 5V

_S= +15V, V_OUT– V

_PIN3= 0V

_S= +5V, V_OUT– V

_PIN3= 0V

Temperature (°C)

V_OUT– V_PIN3(V)

SHORT CIRCUIT CURRENT vs V_S

(I_BIAS-I_DARK) vs TEMPERATURE

180

160

140

120

100

I_FEEDBACK

(I_BIAS-I_DARK

3pF

1MΩ

8pF

)

I_BIAS

I_DARK

V_B

OPT101

(1)

–20

–40

V_S(V)

Temperature (°C)

NOISE EFFECTIVE POWER vs

MEASUREMENT BANDWIDTH, V_S= +15, V_OUT– V_PIN3= 0

OUTPUT NOISE VOLTAGE vs

MEASUREMENT BANDWIDTH, V_S= +15, V_OUT– V_PIN3= 15V

10^–7

10^–8

1000

100

R_F= 10MΩ

R_F= 1MΩ_INTERNAL

R_F= 100k || 33pF

R_F= 100kΩ || 33pF

10^–9

_F= 50k || 56pF

_F= 50kΩ || 56pF

_F= 1MΩ _INTERNAL

10^–10

10^–11

10^–12

_F= 10MΩ

0.1

100

10k

100k

100

10k

100k

Bandwidth (Hz)

Frequency (Hz)

OPT101

TYPICAL PERFORMANCE CURVES (CONT)

At T_A= +25°C, V_S= +2.7V to +36V, λ = 650nm, internal 1MΩ feedback resistor, and R_L= 10kΩ, unless otherwise noted.

SMALL SIGNAL RESPONSE

LARGE SIGNAL RESPONSE

SMALL SIGNAL RESPONSE (C_LOAD= 10,000 pF)

(Pin 3 = 0V)

SMALL SIGNAL RESPONSE (C_LOAD= 10,000 pF)

(Pin 3 = –15V)

OPT101

source to sink currents up to approximately 100µA. The

benefits of this current sink are shown in the typical

APPLICATIONS INFORMATION

Figure 1 shows the basic connections required to operate the

OPT101. Applications with high-impedance power supplies

may require decoupling capacitors located close to the

device pins as shown. Output is 7.5mV dc with no light and

increases with increasing illumination.

performance curves “Small Signal Response (C_LOAD

10,000pF)” which compare operation with pin 3 grounded

and connected to –15V.

Due to the architecture of this output stage current sink, there

is a slight increase in operating current when there is a voltage

between pin 3 and the output. Depending on the magnitude of

this voltage, the quiescent current will increase by

approximately 100µA as shown in the typical performance

curve "Quiescent Current vs (V_OUT– V_PIN3)".

Photodiode current, I_D, is proportional to the radiant power, or

flux, (in watts) falling on the photodiode. At a wavelength of

650nm (visible red) the photodiode Responsivity, R_I, is

approximately 0.45A/W. Responsivity at other wavelengths is

shown in the typical performance curve “Responsivity vs

Wavelength.”

V_S

0.01 to 0.1µF

V_S= +2.7 to +36V

(Pin available

(2)

on DIP only.)

0.01 to 0.1µF

(Pin available

3pF

1MΩ

8pF

(2)

on DIP only.)

3pF

1MΩ

8pF

(4)

(5)

V_B

Dark output ≈ 7.5mV

OPT101

Positive going output

with increased light

V_B

(1)

(3)

0.01 to 0.1µF

OPT101

(1)

(3)

Common

–V = –1V to (V_S– 36V)

Common

FIGURE 2. Bipolar Power Supply Circuit Connections.

FIGURE 1. Basic Circuit Connections.

The typical performance curve “Output Voltage vs Radiant

Power” shows the response throughout a wide range of

radiant power. The response curve “Output Voltage vs

Irradiance” is based on the photodiode area of 5.2mm².

NOISE PERFORMANCE

Noise performance of the OPT101 is determined by the op

amp characteristics, feedback components and photodiode

capacitance. The typical performance curve “Output Noise

Voltage vs Measurement Bandwidth” shows how the noise

varies with R_Fand measured bandwidth (0.1Hz to the

indicated frequency), when the output voltage minus the

voltage on pin 3 is greater than approximately 50mV. Below

this level, the output stage is powered down, and the effective

bandwidth is decreased. This reduces the noise to

approximately 1/3 the nominal noise value of 300µVrms, or

100µVrms. This enables a low level signal to be resolved.

The OPT101’s voltage output is the product of the photodiode

current times the feedback resistor, (I_DR_F), plus a pedestal

voltage, V_B, of approximately 7.5mV introduced for single

supply operation. The internal feedback resistor is laser trimmed

to 1MΩ. Using this resistor, the output voltage responsivity, R_V,

is approximately 0.45V/µW at 650nm wavelength. Figure 1

shows the basic circuit connections for the OPT101 operating

with a single power supply and using the internal 1MΩ feedback

resistor for a response of 0.45V/µW at 650nm. Pin 3 is

connected to common in this configuration.

Noise can be reduced by filtering the output with a cutoff

frequency equal to the signal bandwidth. This will improve

signal-to-noise ratio. Also, output noise increases in proportion

to the square root of the feedback resistance, while responsivity

increases linearly with feedback resistance. Best signal-to-noise

ratio is achieved with large feedback resistance. This comes

with the trade-off of decreased bandwidth.

CAPACITIVE LOADING

The OPT101 is capable of driving load capacitances of 10nF

without instability. However, dynamic performance with

capacitive loads can be improved by applying a negative

bias voltage to Pin 3 (shown in Figure 2). This negative

power supply voltage allows the output to go negative in

response to the reactive effect of a capacitive load. An

internal JFET connected between pin 5 (output) and pin 3

allows the output to sink current. This current sink capability

can also be useful when driving the capacitive inputs of

some analog-to-digital converters which require the signal

The noise performance of the photodetector is sometimes

characterized by Noise Effective Power (NEP). This is the

radiant power that would produce an output signal equal to the

noise level. NEP has the units of radiant power (watts), or

Watts/√Hz to convey spectral information about the noise.

The typical performance curve “Noise Effective Power” vs

Measurement Bandwidth" illustrates the NEP for the OPT101.

OPT101

DARK ERRORS

This capacitor eliminates gain peaking and prevents

instability. The value of C_EXTcan be determined from the

table in Figure 4. Values of R_F, other than shown in the table,

can be interpolated.

The dark errors in the specification table include all sources.

The dominant source of dark output voltage is the “pedestal”

voltage applied to the non-inverting input of the op amp.

This voltage is introduced to provide linear operation in the

absence of light falling on the photodiode. Photodiode dark

current is approximately 2.5pA and contributes virtually no

offset error at room temperature. The bias current of the op

amp's summing junction (– input) is approximately 165pA.

The dark current will be subtracted from the amplifier's bias

current, and this residual current will flow through the

feedback resistor creating an offset. The effects of temperature

on this difference current can be seen in the typical

performance curve “(I_BIAS– I_DARK) vs Temperature.” The

dark output voltage can be trimmed to zero with the optional

circuit shown in Figure 3. A low impedance offset driver (op

amp) should be used to drive pin 8 (DIP) because this node

has signal-dependent currents.

V_S

(2)

Pin Numbers:

DIP (SIP)

3pF

1MΩ

8pF

(4)

R_EXT

C_EXT

(5)

V_B

OPT101

(1)

(3)

Pin Numbers:

DIP (SIP)

V_S

(a)-Series R_EXT(for SIP package).

(Pin available

on DIP only.)

(2)

R_EXT

(MΩ)

C_EXT

(pF)

DC Gain

Bandwidth

(kHz)

(x10⁶V/A)

3pF

1MΩ

8pF

2.5

1.3

0.33

(4)

—

C_EXT

V_O

(5)

Adjust R₁

for V_O= 0V

R_EXT

V_B

with no light.

OPT101

V_S

(1)

(3)

(2)

Common

–V

3pF

1MΩ

8pF

+15V

R₁

500kΩ

OPA177

1/2 REF200

100µA

V_B

–15V

OPT101

FIGURE 3. Dark Error (Offset) Adjustment Circuit.

CHANGING RESPONSIVITY

(b)-External Feedback (for DIP package).

An external resistor, R_EXT, can be connected to set a different

voltage responsivity. To increase the responsivity, this resistor

can be placed in series with the internal 1MΩ (Figure 4a), or

with the DIP package, the external resistor can replace the

internal resistor by not connecting pin 4 (Figure 4b). The

second configuration also allows the circuit gain to be

reduced below 10⁶V/A by using external resistors of less

than 1MΩ.

R_EXT

(MΩ)

C_EXT

(pF)

DC Gain

Bandwidth

(kHz)

(x10⁶V/A)

0.05⁽¹⁾

0.1⁽¹⁾

—

0.05

0.1

9.4

3.6

1.8

0.34

Note: (1) May require 1kΩ in series with pin 5 when driving

Figure 4 includes tables showing the responsivity and

bandwidth. For values of R_Fless than 1MΩ, an external

capacitor, C_EXTshould be connected in parallel with R_F.

large capacitances.

FIGURE 4. Changing Responsivity with External Resistor.

OPT101

LIGHT SOURCE POSITIONING

approximately 14kHz. The R and C values are 1MΩ and

11pF respectively. By using external resistors, with less than

3pF parasitic capacitance, the frequency response can be

improved. An external 1MΩ resistor used in the configuration

shown in Figure 4b will create a 23kHz bandwidth with the

same 10⁶V/A dc transimpedance gain. This yields a rise time

of approximately 15µs (10% to 90%). Dynamic response is

not limited by op amp slew rate. This is demonstrated by the

dynamic response oscilloscope photographs showing virtually

identical large-signal and small-signal response.

The OPT101 is tested with a light source that uniformly

illuminates the full area of the integrated circuit, including

the op amp. Although IC amplifiers are light-sensitive to

some degree, the OPT101 op amp circuitry is designed to

minimize this effect. Sensitive junctions are shielded with

metal, and the photodiode area is very large relative to the op

amp input circuitry.

If your light source is focused to a small area, be sure that

it is properly aimed to fall on the photodiode. A narrowly

focused beam falling on only the photodiode will provide

improved settling times compared to a source that uniformly

illuminates the full area of the die. If a narrowly focused

light source were to miss the photodiode area and fall only

on the op amp circuitry, the OPT101 would not perform

properly. The large 0.09" x 0.09" (2.29mm x 2.29mm)

photodiode area allows easy positioning of narrowly focus-

ed light sources. The photodiode area is easily visible, as it

appears very dark compared to the surrounding active

circuitry.

Dynamic response will vary with feedback resistor value as

shown in the typical performance curve “Responsivity vs

Frequency.” Rise time (10% to 90%) will vary according to

the –3dB bandwidth produced by a given feedback resistor

value:

0.35

f_C

t_r=

where:

t_ris the rise time (10% to 90%)

f_Cis the –3dB bandwidth

The incident angle of the light source also effects the

apparent sensitivity in uniform irradiance. For small incident

angles, the loss in sensitivity is simply due to the smaller

effective light gathering area of the photodiode (proportional

to the cosine of the angle). At a greater incident angle, light

is diffracted and scattered by the package. These effects are

shown in the typical performance curve “Responsivity vs

Incident Angle.”

LINEARITY PERFORMANCE

The photodiode is operated in the photoconductive mode so

the current output of the photodiode is very linear with

radiant power throughout a wide range. Nonlinearity remains

below approximately 0.05% up to 100µA photodiode current.

The photodiode can produce output currents of 1mA or

greater with high radiant power, but nonlinearity increases

to several percent in this region.

DYNAMIC RESPONSE

This very linear performance at high radiant power assumes

that the full photodiode area is uniformly illuminated. If the

light source is focused to a small area of the photodiode,

nonlinearity will occur at lower radiant power.

Using the internal 1MΩ resistor, the dynamic response of

the photodiode/op amp combination can be modeled as a

simple R • C circuit with a –3dB cutoff frequency of

0.01 to

0.1µF

3pF

1MΩ

8pF

+2.7 to

+36V

V_OUT

V_B

OPT101

NOTE: Pin Numbers for DIP Package.

FIGURE 5. Three-Wire Remote Light Measurement.

OPT101

+15V

3pF

1MΩ

8pF

+15V

Difference Output

V₀₁

INA118

50kΩ

R_G

V_OUT= (V₀₂– V₀₁) 1+

V_B

OPT101

–15V

+15V

3pF

+15V

Log of Ratio Measurement

(Absorbance)

1MΩ

8pF

100kΩ

V_OUT= K log₁₀(V₀₂/V₀₁)

LOG100

V₀₂

1nF

V_B

OPT101

–15V

NOTE: OPT101 Pin Numbers for DIP Package.

FIGURE 6. Differential Light Measurement.

+15V

3pF

1MΩ

8pF

3.3nF

+15V

10kΩ

100kΩ

270Ω

OPA627

10V

LED

REF102

IN4148

–15V

OPT101

11kΩ

0.03µF

Glass Microscope Slide

Approximately

92% light

available for application.

LED

≈ 8%

OPT101

NOTE: OPT101 Pin Numbers for DIP Package.

FIGURE 7. LED Output Regulation Circuit.

OPT101

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OPT101P产品参数

型号:	OPT101P
是否Rohs认证：	不符合
生命周期：	Transferred
Reach Compliance Code：	unknown
风险等级：	5.83
应用：	AMPLIFIER
配置：	SINGLE
红外线范围：	NO
JESD-609代码：	e0
安装特点：	THROUGH HOLE MOUNT
功能数量：	1
最高工作温度：	70 °C
最低工作温度：
光电设备类型：	LINEAR IC OUTPUT OPTOCOUPLER
形状：	SQUARE
尺寸：	2.29 mm
子类别：	Photo ICs
标称供电电压：	36 V
表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

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产品型号OPT101P的概述

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