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产品型号P100K的Datasheet PDF文件预览

P100A - P100M

AXIAL LEADED SILICON ZENER DIODES

VOLTAGE RANGE: 50 - 1000V

CURRENT: 1.0 A

Features

!

Diffused Junction

!

Low Forward Voltage Drop

High Current Capability

High Reliability

A

B

A

High Surge Current Capability

Mechanical Data

C

D

!

Case: D O - 4 1 Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

Weight: 0.34 grams (approx.)

Mounting Position: Any

DO-41

Min

Dim

A

Max

!

25.40

4.06

¾

B

5.21

0.864

2.72

Marking: Type Number

C

0.71

D

2.00

All Dimensions in mm

T_A= 25ꢀC unless otherwise specified

Maximum Ratings and Electrical Characteristics

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

Characteristic

Symbol P100A P100B P100D P100G P100J P100K P100M

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

50

35

100

70

200

140

400

600

420

800

560

1000

700

V

RMS Reverse Voltage

V^R(RMS)

I^O

280

1.0

V

A

Average Rectified Output Current

(Note 1)

@T_A= 75°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

I^FSM

30

A

Forward Voltage

@I_F= 1.0A

V^FM

I^RM

1.0

V

µA

Peak Reverse Current

At Rated DC Blocking Voltage @T_A= 100°C

@T_A= 25°C

5.0

50

Typical Junction Capacitance (Note 2)

C^j

15

50

pF

Typical Thermal Resistance Junction to Ambient

(Note 1)

RꢀJA

K/W

Operating Temperature Range

Storage Temperature Range

T^j

-65 to +125

-65 to +150

°C

T^STG

Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case

2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V D.C.

1 of 2

www.sunmate.tw

10

1.0

0.1

T_j= 25ºC

PULSE WIDTH = 300µs

2% DUTY CYCLE

0.01

0.6

0.8

1.0

1.2

1.4

1.6

V_F, INSTANTANEOUS FORWARD VOLTAGE (V)

Fig. 2 Typical Forward Characteristics

50

40

30

100

T_j= 25ºC

f = 1MHz

10

20

10

0

8.3ms Single half sine-wave

JEDEC Method

1.0

10

NUMBER OF CYCLES AT 60 Hz

Fig. 3 Max Non-Repetitive Peak Fwd Surge Current

100

1.0

10

100

V_R, REVERSE VOLTAGE (V)

Fig. 4 Typical Junction Capacitance

2 of 2

www.sunmate.tw

P100K相关产品..

P100KHCT P100KHCT-ND P100KHTR-ND P100KJ P100LCT-ND P100M P100N10F7 P100N10ZA P100N8F6 P100NF03L-03 P100NF04 P100NF04L P100NF250V P100NH02L P100P02FHO P100P02FJO P100P02FKO P100P06PDG-E1 P100PH02 P100PH02CH0 P100PH02CJ0 P100PH04FM0 P100PH04FN0 P100PH06CH0 P100PH06CJ0 P100PH06CK0 P100PH08FM0 P100PH08FN0 P100RH02CH0 P100RH02CJ0 P100RH04FL0 P100RH04FM0 P100RH04FN0 P100RH06CH0 P100RH06CJ0 P100RH08CM0 P100RH08CN0 P100TS/RD-0511A P100US

型号:	P100K-8I
生命周期：	Active
IHS 制造商：	PICONICS INC
Reach Compliance Code：	unknown
风险等级：	5.55
型芯材料：	IRON
直流电阻：	0.04 Ω
标称电感 (L)：	0.01 µH
电感器应用：	RF INDUCTOR
电感器类型：	GENERAL PURPOSE INDUCTOR
制造商序列号：	P
功能数量：	1
端子数量：	2
最高工作温度：	125 °C
最低工作温度：	-55 °C
最小质量因数（标称电感时）：	35
最大额定电流：	0.75 A
参考标准：	MIL-C-83446
自谐振频率：	1200 MHz
形状/尺寸说明：	TUBULAR PACKAGE
屏蔽：	NO
表面贴装：	YES
端子位置：	DUAL ENDED
端子形状：	WRAPAROUND
测试频率：	200 MHz
容差：	10%
Base Number Matches：	1

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