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产品型号PDZ4.3B的Datasheet PDF文件预览

DISCRETE SEMICONDUCTORS  
DATA SHEET  
book, halfpage  
PDZ-B series  
Voltage regulator diodes  
1998 Apr 23  
Product specification  
Supersedes data of 1998 Jan 09  
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
PDZ-B series  
FEATURES  
DESCRIPTION  
PINNING  
PIN  
Total power dissipation:  
max. 400 mW  
Low-power general purpose voltage  
regulator diodes in a small plastic  
SMD SOD323 package.  
DESCRIPTION  
1
2
cathode  
anode  
Small plastic package suitable for  
surface mounted design  
Wide variety of voltage ranges:  
nom. 2.4 to 36 V (E24 range).  
handbook, halfpage  
1
2
APPLICATIONS  
General voltage regulation.  
Top view  
MAM387  
Fig.1 Simplified outline (SOD323) and symbol.  
MARKING  
TYPE  
NUMBER  
MARKING  
CODE  
TYPE  
NUMBER  
MARKING  
CODE  
TYPE  
NUMBER  
MARKING  
CODE  
TYPE  
NUMBER  
MARKING  
CODE  
PDZ2.4B  
PDZ2.7B  
PDZ3.0B  
PDZ3.3B  
PDZ3.6B  
PDZ3.9B  
PDZ4.3B  
PDZ4.7B  
Z0  
Z1  
Z2  
Z3  
Z4  
Z5  
Z6  
Z7  
PDZ5.1B  
PDZ5.6B  
PDZ6.2B  
PDZ6.8B  
PDZ7.5B  
PDZ8.2B  
PDZ9.1B  
PDZ10B  
Z8  
Z9  
ZA  
ZB  
ZC  
ZD  
ZE  
ZF  
PDZ11B  
PDZ12B  
PDZ13B  
PDZ15B  
PDZ16B  
PDZ18B  
PDZ20B  
PDZ22B  
ZG  
ZH  
ZJ  
PDZ24B  
PDZ27B  
PDZ30B  
PDZ33B  
PDZ36B  
ZQ  
ZR  
ZS  
ZT  
ZU  
ZK  
ZL  
ZM  
ZN  
ZP  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
200  
see Table 2  
UNIT  
IF  
continuous forward current  
mA  
IZSM  
non-repetitive peak reverse current  
tp = 100 µs; square wave;  
Tamb = 25 °C prior to surge  
Ptot  
Tstg  
Tj  
total power dissipation  
storage temperature  
junction temperature  
Tamb = 25 °C; note 1; see Fig.2  
400  
+150  
150  
mW  
°C  
65  
°C  
Note  
1. Device mounted on a printed-circuit board measuring 11 × 25 × 1.6 mm.  
1998 Apr 23  
2
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
PDZ-B series  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
K/W  
K/W  
Rth j-s  
Rth j-a  
thermal resistance from junction to soldering point  
thermal resistance from junction to ambient  
130  
340  
note 1  
Note  
1. Device mounted on a printed-circuit board measuring 11 × 25 × 1.6 mm.  
ELECTRICAL CHARACTERISTICS  
Table 1 Total series  
Tj = 25 °C unless otherwise specified.  
SYMBOL  
PARAMETER  
forward voltage  
CONDITIONS  
MAX.  
UNIT  
VF  
IF = 10 mA; see Fig.3  
IF = 100 mA; see Fig.3  
0.9  
1.1  
V
V
IR  
reverse current  
PDZ2.4B  
PDZ2.7B  
PDZ3.0B  
PDZ3.3B  
PDZ3.6B  
PDZ3.9B  
PDZ4.3B  
PDZ4.7B  
PDZ5.1B  
PDZ5.6B  
PDZ6.2B  
PDZ6.8B  
PDZ7.5B  
PDZ8.2B  
PDZ9.1B  
PDZ10B  
PDZ11B  
PDZ12B  
PDZ13B  
PDZ15B  
PDZ16B  
PDZ18B  
PDZ20B  
PDZ22B  
PDZ24B  
PDZ27B  
PDZ30B  
PDZ33B  
PDZ36B  
VR = 1 V  
VR = 1 V  
VR = 1 V  
VR = 1 V  
VR = 1 V  
VR = 1 V  
VR = 1 V  
VR = 1 V  
VR = 1.5 V  
VR = 2.5 V  
VR = 3 V  
VR = 3.5 V  
VR = 4 V  
VR = 5 V  
VR = 6 V  
VR = 7 V  
VR = 8 V  
VR = 9 V  
VR = 10 V  
VR = 11 V  
VR = 12 V  
VR = 13 V  
VR = 15 V  
VR = 17 V  
VR = 19 V  
VR = 21 V  
VR = 23 V  
VR = 25 V  
VR = 27 V  
50  
20  
10  
5
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
nA  
nA  
nA  
nA  
nA  
nA  
nA  
nA  
nA  
nA  
nA  
nA  
nA  
nA  
nA  
nA  
nA  
nA  
nA  
5
3
3
2
2
1
500  
500  
500  
500  
500  
100  
100  
100  
100  
50  
50  
50  
50  
50  
50  
50  
50  
50  
50  
1998 Apr 23  
3
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Table 2 Per type  
Tj = 25 °C unless otherwise specified.  
WORKING VOLTAGE  
VZ (V)  
DIFFERENTIAL RESISTANCE  
TEMP. COEFF.  
SZ (mV/K)  
at IZ = 5 mA  
DIODE CAP.  
Cd (pF)  
at f = 1 MHz;  
VR = 0  
NON-REPETITIVE PEAK  
REVERSE CURRENT  
IZSM (A) at tp = 100 µs;  
Tamb = 25 °C  
rdif ()  
at IZ = 5 mA  
TYPE  
NUMBER  
(see Figs 4 and 5)  
at IZ  
(mA)  
at IZ  
(mA)  
MIN.  
MAX.  
MAX.  
MAX.  
TYP.  
MAX.  
MAX.  
PDZ2.4B  
PDZ2.7B  
PDZ3.0B  
PDZ3.3B  
PDZ3.6B  
PDZ3.9B  
PDZ4.3B  
PDZ4.7B  
PDZ5.1B  
PDZ5.6B  
PDZ6.2B  
PDZ6.8B  
PDZ7.5B  
PDZ8.2B  
PDZ9.1B  
PDZ10B  
PDZ11B  
PDZ12B  
PDZ13B  
PDZ15B  
PDZ16B  
PDZ18B  
PDZ20B  
PDZ22B  
PDZ24B  
PDZ27B  
PDZ30B  
PDZ33B  
PDZ36B  
2.43  
2.69  
2.63  
2.91  
1000  
1000  
1000  
1000  
500  
500  
600  
600  
250  
100  
80  
0.5  
0.5  
0.5  
0.5  
1.0  
1.0  
1.0  
1.0  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
100  
100  
95  
95  
90  
90  
90  
90  
60  
50  
50  
40  
10  
10  
10  
10  
10  
10  
10  
15  
20  
20  
20  
25  
30  
40  
40  
40  
60  
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
1.6  
2.0  
2.1  
2.4  
2.4  
2.5  
2.5  
1.4  
0.3  
450  
440  
425  
410  
390  
370  
350  
325  
300  
275  
250  
215  
170  
150  
120  
110  
108  
105  
103  
99  
8.0  
8.0  
8.0  
8.0  
8.0  
8.0  
8.0  
8.0  
5.5  
5.5  
5.5  
5.5  
3.5  
3.5  
3.5  
3.5  
3.0  
3.0  
2.5  
2.0  
1.5  
1.5  
1.5  
1.3  
1.3  
1.0  
1.0  
0.9  
0.8  
2.85  
3.07  
3.32  
3.53  
3.60  
3.85  
3.89  
4.16  
4.17  
4.48  
4.55  
4.75  
4.96  
5.20  
5.48  
5.73  
1.9  
6.06  
6.33  
2.7  
6.65  
6.93  
60  
3.4  
7.28  
7.60  
60  
4.0  
8.02  
8.36  
60  
4.6  
8.85  
9.23  
60  
5.5  
9.77  
10.21  
11.22  
12.24  
13.49  
14.98  
16.51  
18.35  
20.39  
22.47  
24.78  
27.53  
30.69  
33.79  
36.87  
60  
6.4  
10.78  
11.74  
12.91  
14.34  
15.85  
17.56  
19.52  
21.54  
23.72  
26.19  
29.19  
32.15  
35.07  
60  
7.4  
80  
8.4  
80  
9.4  
80  
11.4  
12.4  
14.4  
16.4  
18.4  
20.4  
23.4  
26.6  
29.7  
33.0  
80  
97  
80  
93  
100  
100  
120  
150  
200  
250  
300  
88  
84  
80  
73  
66  
60  
59  
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
PDZ-B series  
GRAPHICAL DATA  
MBG781  
MBK245  
500  
300  
handbook, halfpage  
handbook, halfpage  
P
tot  
I
(mW)  
F
(mA)  
400  
200  
300  
200  
100  
0
100  
0
0.6  
0
50  
100  
150  
T
200  
(°C)  
0.8  
1.0  
V
(V)  
F
amb  
Tj = 25 °C.  
Fig.3 Forward current as a function of forward  
voltage; typical values.  
Fig.2 Power derating curve.  
MGL274  
MGL273  
10  
0
handbook, halfpage  
handbook, halfpage  
12  
11  
S
S
Z
(mV/K)  
Z
4.3  
(mV/K)  
10  
9.1  
5
1  
3.9  
3.6  
8.2  
7.5  
6.8  
6.2  
5.6  
5.1  
0
2  
3.3  
4.7  
3.0  
2.4  
2.7  
5  
3  
0
4
8
12  
16  
20  
0
20  
40  
60  
I
(mA)  
Z
I
(mA)  
Z
PDZ4.7B to PDZ12B.  
PDZ2.4B to PDZ4.3B.  
Tj = 25 °C to 150 °C.  
Tj = 25 °C to 150 °C.  
Fig.4 Temperature coefficient as a function  
of working current; typical values.  
Fig.5 Temperature coefficient as a function  
of working current; typical values.  
1998 Apr 23  
5
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
PDZ-B series  
PACKAGE OUTLINE  
SOD323  
Plastic surface mounted package; 2 leads  
Q
A
A
1
c
L
p
v
M
A
H
E
A
D
1
2
b
E
p
(1)  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
max.  
UNIT  
A
b
c
D
E
H
L
p
Q
v
p
E
+ 0.05 0.40  
0.05 0.25  
0.25  
0.10  
1.1  
0.8  
1.8  
1.6  
1.35  
1.15  
2.7  
2.3  
0.45  
0.15  
0.25  
0.15  
mm  
0.2  
Note  
1. The marking bar indicates the cathode.  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
SOD323  
98-09-14  
1998 Apr 23  
6
Philips Semiconductors  
Product specification  
Voltage regulator diodes  
PDZ-B series  
DEFINITIONS  
Data sheet status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
7
Philips Semiconductors – a worldwide company  
Argentina: see South America  
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,  
Tel. +31 40 27 82785, Fax. +31 40 27 88399  
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For all other countries apply to: Philips Semiconductors,  
Internet: http://www.semiconductors.philips.com  
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,  
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825  
© Philips Electronics N.V. 1998  
SCA57  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
115104/00/03/pp8  
Date of release: 1998 Apr 23  
Document order number: 9397 750 03729  
配单直通车
PDZ4.3B产品参数
型号:PDZ4.3B
是否Rohs认证: 符合
生命周期:Active
包装说明:R-PDSO-G2
Reach Compliance Code:compliant
ECCN代码:EAR99
HTS代码:8541.10.00.50
风险等级:5.74
Is Samacsys:N
配置:SINGLE
二极管元件材料:SILICON
二极管类型:ZENER DIODE
JESD-30 代码:R-PDSO-G2
JESD-609代码:e3
湿度敏感等级:1
元件数量:1
端子数量:2
最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260
极性:UNIDIRECTIONAL
最大功率耗散:0.4 W
参考标准:IEC-60134
标称参考电压:4.3 V
表面贴装:YES
技术:ZENER
端子面层:Tin (Sn)
端子形式:GULL WING
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最大电压容差:2%
工作测试电流:5 mA
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