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产品型号PESD5V0F1BL的概述

PESD5V0F1BL 芯片概述 PESD5V0F1BL 是一种专为保护应用设计的瞬态电压抑制器（TVS），属于半导体器件中的一种重要组成部分。它主要用于电路中的 ESD（静电放电）保护，确保敏感电子元件在遭受瞬时高电压冲击时能够正常工作而不受到损害。PESD5V0F1BL 的独特性能使其广泛应用于消费电子、通信设备及汽车电子等领域。这种芯片的工作原理基于其非线性电阻特性。当施加到其引脚的电压超出某一特定阈值时，芯片会迅速导通，从而将过电压引向地线，以保护后端电路。由于其集成度高，体积小，能够实现高效的电磁兼容（EMC）性能，因而被设计师广泛采用。 PESD5V0F1BL 的详细参数 PESD5V0F1BL 的主要参数包括： - 额定工作电压（V_R）: 5V - 峰值脉冲功率（P_PP）: 1500 W（在 8/20 μs 脉冲下） - 静态电容（C_d）: 1.1 pF（在 0V...

产品型号PESD5V0F1BL的Datasheet PDF文件预览

PESD5V0F1BL

Femtofarad bidirectional ESD protection diode

Rev. 01 — 1 October 2009

Product data sheet

1. Product proﬁle

1.1 General description

Femtofarad bidirectional ElectroStatic Discharge (ESD) protection diode in a leadless

ultra small SOD882 Surface-Mounted Device (SMD) plastic package designed to protect

one signal line from the damage caused by ESD and other transients. The combination of

extremely low capacitance, high ESD maximum rating and ultra small package makes the

device ideal for high-speed data line protection and antenna protection applications.

1.2 Features

I Bidirectional ESD protection of one line I ESD protection up to 10 kV

I Femtofarad capacitance: C_d= 400 fF

I IEC 61000-4-2; level 4 (ESD)

I AEC-Q101 qualiﬁed

I Low ESD clamping voltage: 30 V

at 30 ns and ± 8 kV

I Very low leakage current: I_RM< 1 nA

1.3 Applications

I 10/100/1000 Mbit/s Ethernet

I FireWire

I Portable electronics

I Communication systems

I Computers and peripherals

I High-speed data lines

I Subscriber Identity Module (SIM) card I Audio and video equipment

protection

I Cellular handsets and accessories

I Antenna protection

1.4 Quick reference data

Table 1.

Quick reference data

Symbol Parameter

Per device

Conditions

Min

Typ

Max

Unit

V_RWM

C_d

reverse standoff voltage

diode capacitance

5.5

f = 1 MHz; V_R= 0 V

0.4

0.55

PESD5V0F1BL

NXP Semiconductors

Femtofarad bidirectional ESD protection diode

2. Pinning information

Table 2.

Pinning

Description

Simpliﬁed outline

Graphic symbol

cathode (diode 1)

cathode (diode 2)

sym045

Transparent

top view

3. Ordering information

Table 3.

Ordering information

Type number

Package

Name

Description

Version

PESD5V0F1BL

leadless ultra small plastic package; 2 terminals;

SOD882

body 1.0 × 0.6 × 0.5 mm

4. Marking

Table 4.

Marking codes

Type number

Marking code

PESD5V0F1BL

5. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Per device

I_PP

Parameter

Conditions

Min

Max

Unit

[1]

peak pulse current

junction temperature

ambient temperature

storage temperature

t_p= 8/20 µs

2.5

T_j

°C

T_amb

−40

−55

+85

+125

T_stg

[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.

PESD5V0F1BL_1

Product data sheet

Rev. 01 — 1 October 2009

2 of 10

PESD5V0F1BL

NXP Semiconductors

Femtofarad bidirectional ESD protection diode

Table 6.

ESD maximum ratings

T_amb= 25 °C unless otherwise speciﬁed.

Symbol Parameter

Conditions

Min

Max Unit

Per device

[1]

V_ESD

electrostatic discharge voltage

IEC 61000-4-2

(contact discharge)

MIL-STD-883 (human

body model)

[1] Device stressed with ten non-repetitive ESD pulses.

Table 7.

ESD standards compliance

Standard

Per device

Conditions

IEC 61000-4-2; level 4 (ESD)

> 8 kV (contact)

> 4 kV

MIL-STD-883; class 3 (human body model)

001aaa631

001aaa630

120

100 %

90 %

100 % I ; 8 µs

(%)

−t

50 % I ; 20 µs

10 %

t = 0.7 ns to 1 ns

30 ns

60 ns

t (µs)

Fig 1. 8/20 µs pulse waveform according to

Fig 2. ESD pulse waveform according to

IEC 61000-4-2

IEC 61000-4-5

PESD5V0F1BL_1

Product data sheet

Rev. 01 — 1 October 2009

3 of 10

PESD5V0F1BL

NXP Semiconductors

Femtofarad bidirectional ESD protection diode

6. Characteristics

Table 8.

Characteristics

T_amb= 25 °C unless otherwise speciﬁed.

Symbol Parameter

Per device

Conditions

Min

Typ

Max

Unit

V_RWM

reverse standoff

5.5

voltage

I_RM

V_BR

C_d

reverse leakage current V_RWM= 5 V

100

breakdown voltage

diode capacitance

clamping voltage

I_R= 1 mA

f = 1 MHz; V_R= 0 V

0.4

0.55

[1]

V_CL

I_PP= 1 A

Ω

I_PP= 2.5 A

I_R= 20 mA

r_dif

differential resistance

[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.

006aab598

0.5

(pF)

0.4

−V −V

−V

RWM

−I

RWM BR CL

0.3

−

0.2

−6.0

−I

−2.0

2.0

6.0

(V)

006aaa676

f = 1 MHz; T_amb= 25 °C

Fig 3. Diode capacitance as a function of reverse

voltage; typical values

Fig 4. V-I characteristics for a bidirectional

ESD protection diode

PESD5V0F1BL_1

Product data sheet

Rev. 01 — 1 October 2009

4 of 10

PESD5V0F1BL

NXP Semiconductors

Femtofarad bidirectional ESD protection diode

ESD TESTER

4 GHz DIGITAL

OSCILLOSCOPE

RG 223/U

50 Ω coax

450 Ω

10×

ATTENUATOR

50 Ω

DUT

(DEVICE

UNDER

TEST)

IEC 61000-4-2 network

= 150 pF; R = 330 Ω

vertical scale = 2 kV/div

horizontal scale = 15 ns/div

vertical scale = 50 V/div

horizontal scale = 15 ns/div

GND

unclamped +8 kV ESD pulse waveform

(IEC 61000-4-2 network)

clamped +8 kV ESD pulse waveform

(IEC 61000-4-2 network) pin 1 to 2

vertical scale = 2 kV/div

horizontal scale = 15 ns/div

GND

vertical scale = 50 V/div

horizontal scale = 15 ns/div

unclamped −8 kV ESD pulse waveform

(IEC 61000-4-2 network)

clamped −8 kV ESD pulse waveform

(IEC 61000-4-2 network) pin 1 to 2

006aab599

Fig 5. ESD clamping test setup and waveforms

PESD5V0F1BL_1

Product data sheet

Rev. 01 — 1 October 2009

5 of 10

PESD5V0F1BL

NXP Semiconductors

Femtofarad bidirectional ESD protection diode

7. Application information

PESD5V0F1BL is designed for the protection of one bidirectional data or signal line from

the damage caused by ESD and surge pulses. The device may be used on lines where

the signal polarities are both, positive and negative with respect to ground.

ANTENNA

GPS

PESD5V0F1BL

GND

006aab600

Fig 6. Application diagram

Circuit board layout and protection device placement

Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)

and surge transients. The following guidelines are recommended:

1. Place the device as close to the input terminal or connector as possible.

2. The path length between the device and the protected line should be minimized.

3. Keep parallel signal paths to a minimum.

4. Avoid running protected conductors in parallel with unprotected conductors.

5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and

ground loops.

6. Minimize the length of the transient return path to ground.

7. Avoid using shared transient return paths to a common ground point.

8. Ground planes should be used whenever possible. For multilayer PCBs, use ground

vias.

8. Test information

8.1 Quality information

This product has been qualiﬁed in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualiﬁcation for discrete semiconductors, and is

suitable for use in automotive applications.

PESD5V0F1BL_1

Product data sheet

Rev. 01 — 1 October 2009

6 of 10

PESD5V0F1BL

NXP Semiconductors

Femtofarad bidirectional ESD protection diode

9. Package outline

0.50

0.46

0.62

0.55

0.30

0.22

1.02

0.95

0.65

0.30

0.22

0.55

0.47

cathode marking on top side

03-04-17

Dimensions in mm

Fig 7. Package outline PESD5V0F1BL (SOD882)

10. Packing information

Table 9.

Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.^[1]

Type number Package Description

Packing quantity

10000

PESD5V0F1BL SOD882 2 mm pitch, 8 mm tape and reel

-315

[1] For further information and the availability of packing methods, see Section 14.

11. Soldering

1.3

0.7

R0.05 (8×)

solder lands

solder resist

0.6 0.7

(2×) (2×)

0.9

solder paste

occupied area

0.3

(2×)

Dimensions in mm

0.4

(2×)

sod882_fr

Reﬂow soldering is the only recommended soldering method.

Fig 8. Reﬂow soldering footprint PESD5V0F1BL (SOD882)

PESD5V0F1BL_1

Product data sheet

Rev. 01 — 1 October 2009

7 of 10

PESD5V0F1BL

NXP Semiconductors

Femtofarad bidirectional ESD protection diode

12. Revision history

Table 10. Revision history

Document ID

Release date

Data sheet status

Change notice

Supersedes

PESD5V0F1BL_1

20091001

Product data sheet

PESD5V0F1BL_1

Product data sheet

Rev. 01 — 1 October 2009

8 of 10

PESD5V0F1BL

NXP Semiconductors

Femtofarad bidirectional ESD protection diode

13. Legal information

13.1 Data sheet status

Document status^[1][2]

Product status^[3]

Development

Deﬁnition

Objective [short] data sheet

This document contains data from the objective speciﬁcation for product development.

This document contains data from the preliminary speciﬁcation.

This document contains the product speciﬁcation.

Preliminary [short] data sheet Qualiﬁcation

Product [short] data sheet Production

[1]

[2]

[3]

Please consult the most recently issued document before initiating or completing a design.

The term ‘short data sheet’ is explained in section “Deﬁnitions”.

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

damage. NXP Semiconductors accepts no liability for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

13.2 Deﬁnitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modiﬁcations or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

speciﬁed use without further testing or modiﬁcation.

Limiting values — Stress above one or more limiting values (as deﬁned in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the

full data sheet shall prevail.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conﬂict between information in this document and such

terms and conditions, the latter will prevail.

13.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or

warranties, expressed or implied, as to the accuracy or completeness of such

information and shall have no liability for the consequences of use of such

information.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation speciﬁcations and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

13.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales ofﬁce addresses, please send an email to: salesaddresses@nxp.com

PESD5V0F1BL_1

Product data sheet

Rev. 01 — 1 October 2009

9 of 10

PESD5V0F1BL

NXP Semiconductors

Femtofarad bidirectional ESD protection diode

15. Contents

Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1

1.2

1.3

1.4

General description. . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

Ordering information. . . . . . . . . . . . . . . . . . . . . 2

Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

Application information. . . . . . . . . . . . . . . . . . . 6

Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6

Quality information . . . . . . . . . . . . . . . . . . . . . . 6

Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7

Packing information. . . . . . . . . . . . . . . . . . . . . . 7

Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8

8.1

Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9

Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9

Deﬁnitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

13.1

13.2

13.3

13.4

Contact information. . . . . . . . . . . . . . . . . . . . . . 9

Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 1 October 2009

Document identifier: PESD5V0F1BL_1

PESD5V0F1BL相关文章

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PESD5V0F1BL产品参数

型号:	PESD5V0F1BL
是否Rohs认证：	符合
生命周期：	Transferred
IHS 制造商：	NXP SEMICONDUCTORS
零件包装代码：	DFN
包装说明：	1 X 0.60 MM, 0.50 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC PACKAGE-2
针数：	2
Reach Compliance Code：	unknown
ECCN代码：	EAR99
HTS代码：	8541.10.00.50
风险等级：	5.62
Is Samacsys：	N
其他特性：	LOW CAPACITANCE
最大击穿电压：	10 V
最小击穿电压：	6 V
配置：	SINGLE
二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：	R-PBCC-N2
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	1
端子数量：	2
最高工作温度：	125 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	CHIP CARRIER
峰值回流温度（摄氏度）：	260
极性：	BIDIRECTIONAL
认证状态：	Not Qualified
最大重复峰值反向电压：	5.5 V
表面贴装：	YES
技术：	AVALANCHE
端子面层：	TIN
端子形式：	NO LEAD
端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	30
Base Number Matches：	1

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产品型号PESD5V0F1BL的Datasheet PDF文件预览

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