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产品型号PESD5V0S1BB的概述

芯片PESD5V0S1BB的概述 PESD5V0S1BB是一款广泛应用于电子领域的TVS（瞬态抑制二极管）器件，通常用于过电压保护。这款芯片特别适合用于对数据线和信号线进行保护，能够有效防止静电放电（ESD）所带来的损害。随着电子设备的普及，ESD造成的损害问题日益严重，因此高效能的保护器件显得尤为重要。PESD5V0S1BB的设计旨在提供可靠的保护性能，以满足现代电子产品的需求。芯片PESD5V0S1BB的详细参数 PESD5V0S1BB的技术参数与性能特征如下： 1. 工作电压（V_RWM）：芯片可承受的最大工作电压为5V，对应的钳位电压可在瞬态情况下保护信号线不受损害。 2. ESD保护等级：根据IEC61000-4-2标准，PESD5V0S1BB能够承受±8kV接触放电和±15kV空气放电测试，显示出其优异的ESD保护能力。 3. 输入电流（I_PP）：大约为16A，适合处理...

产品型号PESD5V0S1BB的Datasheet PDF文件预览

PESD5V0S1BA;PESD5V0S1BB;

PESD5V0S1BL

Low capacitance bidirectional ESD protection diodes

Rev. 03 — 17 December 2004

Product data sheet

1. Product proﬁle

1.1 General description

Low capacitance ElectroStatic Discharge (ESD) protection diodes in ultra small SMD

plastic packages designed to protect one signal line from the damage caused by ESD and

other transients.

Table 1:

Product overview

Type number

Package

Philips

JEITA

SC-76

SC-79

PESD5V0S1BA

PESD5V0S1BB

PESD5V0S1BL

SOD323

SOD523

SOD882

1.2 Features

■ Bidirectional ESD protection of one line ■ ESD protection > 30 kV

■ Max. peak pulse power: P_PP= 130 W

■ Low clamping voltage: V_(CL)R= 14 V

■ Ultra low leakage current: I_RM= 5 nA

■ IEC 61000-4-2, level 4 (ESD)

■ IEC 61000-4-5 (surge); I_PP= 12 A

■ Ultra small SMD plastic packages

1.3 Applications

■ Cellular handsets and accessories

■ Portable electronics

■ Communication systems

■ Audio and video equipment

■ Computers and peripherals

1.4 Quick reference data

Table 2:

Symbol

V_RWM

C_d

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

reverse stand-off voltage

diode capacitance

V_R= 0 V;

f = 1 MHz

PESD5V0S1BA/BB/BL

Philips Semiconductors

Low capacitance bidirectional ESD protection diodes

2. Pinning information

Table 3:

Pinning

Description

Simpliﬁed outline

Symbol

SOD323, SOD523

cathode 1

cathode 2

sym045

001aab540

SOD882

cathode 1

cathode 2

sym045

Transparent

top view

3. Ordering information

Table 4:

Ordering information

Type number

Package

Name

SC-76

SC-79

Description

Version

SOD323

SOD523

SOD882

PESD5V0S1BA

PESD5V0S1BB

PESD5V0S1BL

plastic surface mounted package; 2 leads

leadless ultra small plastic package; 2 terminals;

body 1.0 × 0.6 × 0.5 mm

4. Marking

Table 5:

Marking codes

Type number

PESD5V0S1BA

PESD5V0S1BB

PESD5V0S1BL

Marking code

9397 750 14036

Product data sheet

Rev. 03 — 17 December 2004

2 of 15

PESD5V0S1BA/BB/BL

Philips Semiconductors

Low capacitance bidirectional ESD protection diodes

5. Limiting values

Table 6:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Per diode

P_PP

Parameter

Conditions

Min

Max

Unit

[1] [2]

peak pulse power

8/20 µs

130

I_PP

peak pulse current

junction temperature

ambient temperature

storage temperature

T_j

150

+150

°C

T_amb

T_stg

−65

[1] Non-repetitive current pulse 8/20 µs exponentially decaying waveform according to IEC61000-4-5; see

Figure 1.

[2] Measured from pin 1 to pin 2.

Table 7:

Symbol Parameter

ESD electrostatic discharge IEC 61000-4-2 (contact

ESD maximum ratings

Conditions

Min

Max

Unit

[1] [2]

capability

discharge)

HBM MIL-Std 883

[1] Measured from pin 1 to pin 2.

[2] Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Figure 2.

Table 8:

ESD standards compliance

ESD Standard

Conditions

IEC 61000-4-2, level 4 (ESD); Figure 2

HBM MIL-STD 883; class 3

> 15 kV (air); > 8 kV (contact)

> 4 kV

9397 750 14036

Product data sheet

Rev. 03 — 17 December 2004

3 of 15

PESD5V0S1BA/BB/BL

Philips Semiconductors

Low capacitance bidirectional ESD protection diodes

001aaa191

mle218

120

100 %

90 %

100 % I ; 8 µs

(%)

−t

50 % I ; 20 µs

10 %

t = 0.7 to 1 ns

30 ns

t (µs)

60 ns

Fig 1. 8/20 µs pulse waveform according to

Fig 2. ElectroStatic Discharge (ESD) pulse waveform

according to IEC 61000-4-2

IEC 61000-4-5

9397 750 14036

Product data sheet

Rev. 03 — 17 December 2004

4 of 15

PESD5V0S1BA/BB/BL

Philips Semiconductors

Low capacitance bidirectional ESD protection diodes

6. Characteristics

Table 9:

Characteristics

T_amb= 25 °C unless otherwise speciﬁed.

Symbol

Per diode

V_RWM

Parameter

Conditions

Min

Typ

Max

Unit

reverse stand-off voltage

reverse leakage current

I_RM

V_RWM= 5 V;

see Figure 6

I_PP= 1 A

100

[1] [2]

V_(CL)R

clamping voltage

9.5

I_PP= 12 A

I_R= 1 mA

V_(BR)

r_dif

breakdown voltage

differential resistance

diode capacitance

5.5

Ω

C_d

V_R= 0 V; f = 1 MHz;

see Figure 5

[1] Non-repetitive current pulse 8/20 µs exponentially decaying waveform according to IEC61000-4-5; see Figure 1.

[2] Measures from pin 1 to pin 2.

9397 750 14036

Product data sheet

Rev. 03 — 17 December 2004

5 of 15

PESD5V0S1BA/BB/BL

Philips Semiconductors

Low capacitance bidirectional ESD protection diodes

001aaa202

001aaa193

1.2

pp(25˚C)

(W)

0.8

0.4

100

150

200

(µs)

T (°C)

T_amb= 25 °C

Fig 3. Peak pulse power dissipation as a function of

exponential time duration t_p; typical values

Fig 4. Relative variation of peak pulse power as a

function of junction temperature; typical values

001aaa204

001aaa203

RM(T )

(pF)

RM(T =85°C)

−1

100

125

150

T (°C)

(V)

T_amb= 25 °C; f = 1 MHz

Fig 5. Diode capacitance as a function of reverse

voltage; typical values

Fig 6. Relative variation of reverse leakage current as

a function of junction temperature; typical

values

9397 750 14036

Product data sheet

Rev. 03 — 17 December 2004

6 of 15

PESD5V0S1BA/BB/BL

Philips Semiconductors

Low capacitance bidirectional ESD protection diodes

ESD TESTER

4 GHz DIGITAL

OSCILLOSCOPE

RG 223/U

50 Ω coax

450 Ω

10×

ATTENUATOR

50 Ω

PESD5V0S1Bx

IEC 61000-4-2 network

= 150 pF; R = 330 Ω

vertical scale = 200 V/div

horizontal scale = 50 ns/div

vertical scale = 10 V/div

horizontal scale = 50 ns/div

GND

unclamped +1 kV ESD voltage waveform

clamped +1 kV ESD voltage waveform

(IEC61000-4-2 network)

GND

vertical scale = 200 V/div

horizontal scale = 50 ns/div

vertical scale = 10 V/div

horizontal scale = 50 ns/div

unclamped −1 kV ESD voltage waveform

(IEC61000-4-2 network)

clamped −1 kV ESD voltage waveform

(IEC61000-4-2 network)

006aaa056

Fig 7. ESD clamping test set-up and waveforms

9397 750 14036

Product data sheet

Rev. 03 — 17 December 2004

7 of 15

PESD5V0S1BA/BB/BL

Philips Semiconductors

Low capacitance bidirectional ESD protection diodes

7. Application information

PESD5V0S1Bx series is designed for the protection of one bidirectional signal line from

the damage caused by ElectroStatic Discharge (ESD) and surge pulses. The devices may

be used on lines where the signal polarities are above and below ground. They provide a

surge capability of up to 130 W per line for a 8/20 µs waveform.

signal line

PESD5V0S1Bx

GND

006aaa057

Fig 8. Bidirectional protection of one signal line.

Circuit board layout and protection device placement:

Circuit board layout is critical for the suppression of ESD, EFT and surge transients.

The following guidelines are recommended:

1. Place the protection device as close to the input terminal or connector as possible.

2. The path length between the protection device and the protected line should be

minimized.

3. Keep parallel signal paths to a minimum.

4. Avoid running protection conductors in parallel with unprotected conductor.

5. Minimize all printed-circuit board conductive loops including power and ground loops.

6. Minimize the length of the transient return path to ground.

7. Avoid using shared transient return paths to a common ground point.

8. Ground planes should be used whenever possible. For multilayer printed-circuit

boards, use ground vias.

9397 750 14036

Product data sheet

Rev. 03 — 17 December 2004

8 of 15

PESD5V0S1BA/BB/BL

Philips Semiconductors

Low capacitance bidirectional ESD protection diodes

8. Package outline

Plastic surface mounted package; 2 leads

SOD323

(1)

detail X

2 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

max

1.1

0.8

0.40 0.25

0.25 0.10

1.8

1.6

1.35

1.15

2.7

2.3

0.45 0.25

0.15 0.15

0.05

0.2

Note

1. The marking bar indicates the cathode

REFERENCES

JEDEC JEITA

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC

99-09-13

03-12-17

SOD323

SC-76

Fig 9. Package outline SOD323 (SC-76)

9397 750 14036

Product data sheet

Rev. 03 — 17 December 2004

9 of 15

PESD5V0S1BA/BB/BL

Philips Semiconductors

Low capacitance bidirectional ESD protection diodes

Plastic surface mounted package; 2 leads

SOD523

0.5

1 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

0.34

0.26

0.17

0.11

0.65

0.58

1.25

1.15

0.85

0.75

1.65

1.55

0.1

(1)

Note

1. The marking bar indicates the cathode.

REFERENCES

JEDEC

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

JEITA

98-11-25

02-12-13

SOD523

SC-79

Fig 10. Package outline SOD523 (SC-79)

9397 750 14036

Product data sheet

Rev. 03 — 17 December 2004

10 of 15

PESD5V0S1BA/BB/BL

Philips Semiconductors

Low capacitance bidirectional ESD protection diodes

Leadless ultra small plastic package; 2 terminals; body 1.0 x 0.6 x 0.5 mm

SOD882

(2)

0.5

1 mm

scale

DIMENSIONS (mm are the original dimensions)

(1)

UNIT

max.

0.50

0.46

0.55 0.62 1.02

0.47 0.55 0.95

0.30

0.22

0.03

0.65

Notes

1. Including plating thickness

2. The marking bar indicates the cathode

REFERENCES

JEDEC

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC

JEITA

03-04-16

03-04-17

SOD882

Fig 11. Package outline SOD882

9397 750 14036

Product data sheet

Rev. 03 — 17 December 2004

11 of 15

PESD5V0S1BA/BB/BL

Philips Semiconductors

Low capacitance bidirectional ESD protection diodes

9. Packing information

Table 10: Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code. ^[1]

Type number

Package

Description

Packing quantity

3000

-115

10000

-135

PESD5V0S1BA

PESD5V0S1BB

PESD5V0S1BL

SOD323

SOD523

SOD882

4 mm pitch, 8 mm tape and reel

-135

-315

[1] For further information and the availability of packing methods, see Section 14.

9397 750 14036

Product data sheet

Rev. 03 — 17 December 2004

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PESD5V0S1BA/BB/BL

Philips Semiconductors

Low capacitance bidirectional ESD protection diodes

10. Revision history

Table 11: Revision history

Document ID

Release date Data sheet status Change notice Doc. number

Supersedes

PESD5V0S1BA_BB_BL_3 20041217

Product data sheet -

9397 750 14036 PESD5V0S1BA_BB_

BL_2

Modiﬁcations:

• Table 1 Product overview added

• Figure 1 Figure title amended

• Table 9 Symbol for differential resistance amended to r_dif

• Figure 5 Axis description changed from V_BRto V_Rand ﬁgure title amended

PESD5V0S1BA_BB_BL_2 20040802

Product data sheet -

9397 750 13514 PESD5V0S1BA_1

PESD5V0S1BB_1

PESD5V0S1BA_1

PESD5V0S1BB_1

20040322

20040304

Product

speciﬁcation

9397 750 12256 -

Product

9397 750 12257 -

speciﬁcation

9397 750 14036

Product data sheet

Rev. 03 — 17 December 2004

13 of 15

PESD5V0S1BA/BB/BL

Philips Semiconductors

Low capacitance bidirectional ESD protection diodes

11. Data sheet status

Level Data sheet status^[1]Product status^{[2] [3]}

Deﬁnition

Objective data

Development

This data sheet contains data from the objective speciﬁcation for product development. Philips

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

Preliminary data

Qualiﬁcation

This data sheet contains data from the preliminary speciﬁcation. Supplementary data will be published

at a later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in

order to improve the design and supply the best possible product.

III

Product data

Production

This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

right to make changes at any time in order to improve the design, manufacturing and supply. Relevant

changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

[1]

[2]

Please consult the most recently issued data sheet before initiating or completing a design.

The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3]

For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

12. Deﬁnitions

13. Disclaimers

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For

detailed information see the relevant data sheet or data handbook.

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips Semiconductors

customers using or selling these products for use in such applications do so

at their own risk and agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Limiting values deﬁnition — Limiting values given are in accordance with

the Absolute Maximum Rating System (IEC 60134). Stress above one or

more of the limiting values may cause permanent damage to the device.

These are stress ratings only and operation of the device at these or at any

other conditions above those given in the Characteristics sections of the

speciﬁcation is not implied. Exposure to limiting values for extended periods

may affect device reliability.

Right to make changes — Philips Semiconductors reserves the right to

make changes in the products - including circuits, standard cells, and/or

software - described or contained herein in order to improve design and/or

performance. When the product is in full production (status ‘Production’),

relevant changes will be communicated via a Customer Product/Process

Change Notiﬁcation (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these products, conveys no

license or title under any patent, copyright, or mask work right to these

products, and makes no representations or warranties that these products are

free from patent, copyright, or mask work right infringement, unless otherwise

speciﬁed.

Application information — Applications that are described herein for any

of these products are for illustrative purposes only. Philips Semiconductors

make no representation or warranty that such applications will be suitable for

the speciﬁed use without further testing or modiﬁcation.

14. Contact information

For additional information, please visit: http://www.semiconductors.philips.com

For sales ofﬁce addresses, send an email to: sales.addresses@www.semiconductors.philips.com

9397 750 14036

Product data sheet

Rev. 03 — 17 December 2004

14 of 15

PESD5V0S1BA/BB/BL

Philips Semiconductors

Low capacitance bidirectional ESD protection diodes

15. Contents

Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

General description. . . . . . . . . . . . . . . . . . . . . . 1

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

1.1

1.2

1.3

1.4

Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

Ordering information. . . . . . . . . . . . . . . . . . . . . 2

Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

Application information. . . . . . . . . . . . . . . . . . . 8

Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

Packing information. . . . . . . . . . . . . . . . . . . . . 12

Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13

Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 14

Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Contact information . . . . . . . . . . . . . . . . . . . . 14

All rights are reserved. Reproduction in whole or in part is prohibited without the prior

written consent of the copyright owner. The information presented in this document does

not form part of any quotation or contract, is believed to be accurate and reliable and may

be changed without notice. No liability will be accepted by the publisher for any

consequence of its use. Publication thereof does not convey nor imply any license under

patent- or other industrial or intellectual property rights.

Date of release: 17 December 2004

Document number: 9397 750 14036

Published in The Netherlands

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PESD5V0S1BB产品参数

型号:	PESD5V0S1BB
是否Rohs认证：	符合
生命周期：	Transferred
IHS 制造商：	PHILIPS SEMICONDUCTORS
Reach Compliance Code：	unknown
ECCN代码：	EAR99
HTS代码：	8541.10.00.50
风险等级：	5.75
击穿电压标称值：	7.5 V
最大钳位电压：	14 V
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-609代码：	e3
极性：	BIDIRECTIONAL
最大重复峰值反向电压：	5 V
子类别：	Transient Suppressors
表面贴装：	YES
端子面层：	Matte Tin (Sn)
Base Number Matches：	1

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