MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS21962-ST
TRANSFER-MOLD TYPE
INSULATED TYPE
THERMAL RESISTANCE
Limits
Symbol
Parameter
Condition
Unit
Min.
—
Typ.
—
Max.
4.7
Rth(j-c)Q
Rth(j-c)F
Inverter IGBT part (per 1/6 module)
Inverter FWD part (per 1/6 module)
°C/W
°C/W
Junction to case thermal
resistance (Note 3)
—
—
5.4
Note 3: Grease with good thermal conductivity should be applied evenly with about +100µm~+200µm on the contacting surface of DIPIPM and
heat-sink.
The contacting thermal resistance between DIPIPM case and heat sink (Rth(c-f)) is determined by the thickness and the thermal con-
ductivity of the applied grease. For reference, Rth(c-f) (per 1/6 module) is about 0.3°C/W when the grease thickness is 20µm and
the thermal conductivity is 1.0W/m·k.
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Limits
Symbol
VCE(sat)
Parameter
Condition
Unit
V
Min.
—
Typ.
Max.
2.20
2.30
2.20
1.60
—
VD = VDB = 15V
VIN = 5V
IC = 5A, Tj = 25°C
IC = 5A, Tj = 125°C
Tj = 25°C, –IC = 5A, VIN = 0V
1.70
1.80
1.70
1.00
0.30
0.30
1.40
0.50
—
Collector-emitter saturation
voltage
—
—
FWD forward voltage
VEC
ton
trr
tc(on)
toff
tc(off)
V
µs
µs
µs
µs
µs
0.50
—
VCC = 300V, VD = VDB = 15V
—
↔
5V
IC = 5A, Tj = 125°C, VIN = 0
0.50
2.00
0.80
1
Switching times
—
Inductive load (upper-lower arm)
—
Tj = 25°C
Tj = 125°C
—
Collector-emitter cut-off
current
ICES
mA
VCE = VCES
—
—
10
CONTROL (PROTECTION) PART
Symbol
Parameter
Limits
Typ.
—
Condition
Unit
mA
Min.
—
—
Max.
2.80
0.55
2.80
0.55
—
VD = VDB = 15V
VIN = 5V
Total of VP1-VNC, VN1-VNC
VUFB-U, VVFB-V, VWFB-W
Total of VP1-VNC, VN1-VNC
VUFB-U, VVFB-V, VWFB-W
—
ID
Circuit current
—
—
VD = VDB = 15V
VIN = 0V
—
—
4.9
—
—
V
V
VFOH
VFOL
VSC(ref)
IIN
VSC = 0V, FO terminal pull-up to 5V by 10kΩ
VSC = 1V, IFO = 1mA
Fault output voltage
—
0.95
0.53
1.50
140
—
0.43
0.70
100
—
0.48
1.00
120
10
V
Short circuit trip level
Input current
Tj = 25°C, VD = 15V
VIN = 5V
(Note 4)
mA
Trip level
OTt
Over temperature protection
(Note 5)
VD = 15V,
°C
At temperature of LVIC
Trip/reset hysteresis
OTrh
UVDBt
UVDBr
UVDt
UVDr
tFO
V
V
Trip level
10.0
10.5
10.3
10.8
20
—
12.0
12.5
12.5
13.0
—
Reset level
Trip level
Control supply under-voltage
protection
—
—
Tj ≤ 125°C
V
V
Reset level
—
µs
V
V
(Note 6)
—
Fault output pulse width
ON threshold voltage
OFF threshold voltage
—
2.1
1.3
2.6
Vth(on)
Vth(off)
0.8
—
Applied between UP, VP, WP, UN, VN, WN-VNC
ON/OFF threshold hysteresis
voltage
V
0.35
0.65
—
Vth(hys)
Note 4: Short circuit protection is functioning only for the lower-arms. Please select the external shunt resistance such that the SC trip-level is
less than 1.7 times of the current rating.
5: Over temperature protection (OT) outputs fault signal, when the LVIC temperature exceeds OT trip temperature level (OTt). In that case
if the heat sink comes off DIPIPM or fixed loosely, don’t reuse that DIPIPM. (There is a possibility that junction temperature of power chips
exceeded maximum Tj (150°C)).
6: Fault signal is asserted only corresponding to a SC, a UV or an OT failure at lower side, and the FO pulse width is different for each fail-
ure modes. For SC failure, FO output is with a fixed width of 20µsec(min), but for UV or OT failure, FO output continuously during the
whole UV or OT period, however, the minimum FO pulse width is 20µsec(min) for very short UV or OT period less than 20µsec.
Mar. 2009
3
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